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Discrete Semiconductor Products(16626)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Input | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Capacitance @ Vr, F | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Diode Type | Voltage - Peak Reverse (Max) | Current - Collector Cutoff (Max) | NTC Thermistor | Input Capacitance (Cies) @ Vce | Capacitance Ratio | Capacitance Ratio Condition | Q @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRGP4069D-EPBF | - |  |
2227 | 0.00000000 | Infineon Technologies | - | Bulk | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | Standard | 268 W | TO-247AD | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 400 | 400V, 35A, 10Ohm, 15V | 120 ns | Trench | 600 V | 76 A | 105 A | 1.85V @ 15V, 35A | 390µJ (on), 632µJ (off) | 104 nC | 46ns/105ns | ||||||||||||||||||||||||||||||||
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IPB47N10SL-26 | 1.0000 | |
8088 | 0.00000000 | Infineon Technologies | SIPMOS® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | PG-TO263-3-2 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 100 V | 47A (Tc) | 4.5V, 10V | 26mOhm @ 33A, 10V | 2V @ 2mA | 135 nC @ 10 V | ±20V | 2500 pF @ 25 V | - | 175W (Tc) | |||||||||||||||||||||||||||||||||||
 |
BSZ088N03LSG | - | |
9276 | 0.00000000 | Infineon Technologies | OptiMOS™ 3 | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 30 V | 12A (Ta), 50A (Tc) | 4.5V, 10V | 8.8mOhm @ 20A, 10V | 2.2V @ 250µA | 21 nC @ 10 V | ±20V | 1700 pF @ 15 V | - | 2.1W (Ta), 35W (Tc) | |||||||||||||||||||||||||||||||||||
 |
F3L300R12MT4_B23 | 216.8200 | |
471 | 0.00000000 | Infineon Technologies | EconoDUAL™ 3 | Bulk | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | F3L300 | 1550 W | Standard | AG-ECONOD-3 | download | EAR99 | 8541.29.0095 | 1 | Half Bridge Inverter | Trench Field Stop | 1200 V | 450 A | 2.1V @ 15V, 300A | 1 mA | Yes | 19 nF @ 25 V | ||||||||||||||||||||||||||||||||||||
|
FD200R12KE3S1HOSA1 | - | |
9806 | 0.00000000 | Infineon Technologies | * | Bulk | Active | - | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SPD03N60S5XT | 0.4900 | |
1 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | PG-TO252-3-313 | download | EAR99 | 8541.29.0095 | 611 | N-Channel | 600 V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 5.5V @ 135µA | 16 nC @ 10 V | ±20V | 420 pF @ 25 V | - | 38W (Tc) | |||||||||||||||||||||||||||||||||||
 |
BSO051N03MSGXUMA1 | 0.2800 | |
2 | 0.00000000 | Infineon Technologies | OptiMOS™3 M | Bulk | Active | -55°C ~ 150°C | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | PG-DSO-8 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 30 V | 14A | - | 5.1mOhm @ 18A, 10V | 2V @ 250µA | ±20V | 3200 pF @ 15 V | - | 2.5W | ||||||||||||||||||||||||||||||||||||
 |
IPW60R099C7 | - | |
6364 | 0.00000000 | Infineon Technologies | CoolMOS™ C7 | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | PG-TO247 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 22A (Tc) | 99mOhm @ 9.7A, 10V | 4V @ 490µA | 42 nC @ 10 V | ±20V | 1819 pF @ 400 V | - | 110W (Tc) | |||||||||||||||||||||||||||||||||
|
TDB6HK360N16P | 197.0500 | |
7201 | 0.00000000 | Infineon Technologies | - | Bulk | Active | -40°C ~ 130°C (TJ) | Chassis Mount | Module | 20 mW | Standard | Module | download | EAR99 | 8541.30.0080 | 1 | 3 Independent | - | 1600 V | 360 A | - | Yes | |||||||||||||||||||||||||||||||||||||||
|
BSZ12DN20NS3G | 1.0000 | |
1363 | 0.00000000 | Infineon Technologies | OptiMOS™ 3 | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 200 V | 11.3A (Tc) | 10V | 125mOhm @ 5.7A, 10V | 4V @ 25µA | 8.7 nC @ 10 V | ±20V | 680 pF @ 100 V | - | 50W (Tc) | |||||||||||||||||||||||||||||||||||
|
FZ1800R16KF4NOSA1 | - | |
7646 | 0.00000000 | Infineon Technologies | - | Bulk | Active | 150°C (TJ) | Chassis Mount | Module | 11000 W | Standard | - | - | 0000.00.0000 | 1 | 3 Independent | - | 1600 V | 1800 A | - | 12 mA | No | |||||||||||||||||||||||||||||||||||||||
|
IPB80N03S4L-03 | - | |
3176 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | PG-TO263-3-2 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 30 V | 80A (Tc) | 4.5V, 10V | 3.7mOhm @ 80A, 10V | 2.2V @ 45µA | 75 nC @ 10 V | ±16V | 5100 pF @ 25 V | - | 94W (Tc) | |||||||||||||||||||||||||||||||||||
 |
BAS40-04E6327 | - | |
4220 | 0.00000000 | Infineon Technologies | - | Bulk | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | BAS40 | Schottky | PG-SOT23-3-11 | download | EAR99 | 8541.10.0070 | 2,100 | Small Signal =< 200mA (Io), Any Speed | 1 Pair Series Connection | 40 V | 120mA (DC) | 1 V @ 40 mA | 1 µA @ 30 V | 150°C | |||||||||||||||||||||||||||||||||||||||
|
FS100R07N2E4_B11 | 79.6300 | |
6 | 0.00000000 | Infineon Technologies | EconoPACK™2 | Bulk | Active | -40°C ~ 150°C (TJ) | Chassis Mount | Module | 20 mW | Standard | AG-ECONO2B | download | EAR99 | 8542.39.0001 | 1 | Three Phase Inverter | Trench Field Stop | 650 V | 125 A | 1.95V @ 15V, 100A | 1 mA | Yes | 6.2 nF @ 25 V | |||||||||||||||||||||||||||||||||||||
|
IPD50R500CE | 0.3900 | |
116 | 0.00000000 | Infineon Technologies | CoolMOS CE™ | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IPD50 | MOSFET (Metal Oxide) | PG-TO252-3-344 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 500 V | 7.6A (Tc) | 13V | 500mOhm @ 2.3A, 13V | 3.5V @ 200µA | 18.7 nC @ 10 V | ±20V | 433 pF @ 100 V | - | 57W (Tc) | ||||||||||||||||||||||||||||||||||
|
IHW30N60T | - | |
9979 | 0.00000000 | Infineon Technologies | TRENCHSTOP™ | Bulk | Active | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | Standard | 187 W | PG-TO247-3-21 | download | EAR99 | 8542.39.0001 | 1 | 400V, 30A, 10.6Ohm, 15V | Trench Field Stop | 600 V | 60 A | 90 A | 2V @ 15V, 30A | 770µJ (off) | 167 nC | 23ns/254ns | ||||||||||||||||||||||||||||||||||||
 |
IPI70R950CE | 1.0000 | |
8674 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -40°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | PG-TO262-3-1 | download | 0000.00.0000 | 1 | N-Channel | 700 V | 7.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 150mA | 15.3 nC @ 10 V | ±20V | 328 pF @ 100 V | - | 68W (Tc) | ||||||||||||||||||||||||||||||||||||
|
IPA057N06N3G | - | |
2765 | 0.00000000 | Infineon Technologies | OptiMOS™3 | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | PG-TO220-3-111 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 60 V | 60A (Tc) | 10V | 5.7mOhm @ 60A, 10V | 4V @ 58µA | 82 nC @ 10 V | ±20V | 6600 pF @ 30 V | - | 38W (Tc) | |||||||||||||||||||||||||||||||||||
 |
ITD50N04S4L07ATMA1 | - | |
8800 | 0.00000000 | Infineon Technologies | OptiMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-5, DPak (4 Leads + Tab), TO-252AD | ITD50 | MOSFET (Metal Oxide) | 46W (Tc) | PG-TO252-5-311 | download | EAR99 | 8542.39.0001 | 363 | 2 N-Channel (Dual) | 40V | 50A (Tc) | 7.2mOhm @ 50A, 10V | 2.2V @ 18µA | 33nC @ 10V | 2480pF @ 25V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
|
IRL40S212ARMA1 | 1.1938 | |
6751 | 0.00000000 | Infineon Technologies | HEXFET®, StrongIRFET™ | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IRL40S212 | MOSFET (Metal Oxide) | PG-TO263-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | N-Channel | 40 V | 195A (Tc) | 4.5V, 10V | 1.9mOhm @ 100A, 10V | 2.4V @ 150µA | 137 nC @ 4.5 V | ±20V | 8320 pF @ 25 V | - | 231W (Tc) | |||||||||||||||||||||||||||||||
|
BSM100GB120DN2K | - | |
6727 | 0.00000000 | Infineon Technologies | * | Bulk | Active | BSM100 | download | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IPP60R600P6 | - | |
2466 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | PG-TO220-3-1 | download | 0000.00.0000 | 1 | N-Channel | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 4.5V @ 200µA | 12 nC @ 10 V | ±20V | 557 pF @ 100 V | - | 63W (Tc) | ||||||||||||||||||||||||||||||||||||
|
IPP024N06N3G | 1.3800 | |
1 | 0.00000000 | Infineon Technologies | OptiMOS™ 3 | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | PG-TO220-3-1 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 60 V | 120A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 196µA | 275 nC @ 10 V | ±20V | 23000 pF @ 30 V | - | 250W (Tc) | |||||||||||||||||||||||||||||||||||
|
IPA60R380P6 | 0.9700 | |
313 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | PG-TO220-3-111 | download | 0000.00.0000 | 313 | N-Channel | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 4.5V @ 320µA | 19 nC @ 10 V | ±20V | 877 pF @ 100 V | - | 31W (Tc) | ||||||||||||||||||||||||||||||||||||
|
IPD14N06S2-80 | - | |
3098 | 0.00000000 | Infineon Technologies | * | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | PG-TO252-3-11 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 55 V | 17A (Tc) | 10V | 80mOhm @ 7A, 10V | 4V @ 14µA | 10 nC @ 10 V | ±20V | 293 pF @ 25 V | - | 47W (Tc) | |||||||||||||||||||||||||||||||||||
 |
BBY55-03WE6327 | 0.1300 | |
5 | 0.00000000 | Infineon Technologies | - | Bulk | Active | -55°C ~ 150°C | Surface Mount | SC-76, SOD-323 | PG-SOD323-2 | download | EAR99 | 8541.10.0070 | 1 | 6.5pF @ 10V, 1MHz | Single | 16 V | 2.5 | C2/C10 | - | |||||||||||||||||||||||||||||||||||||||||
 |
IAUC120N06S5N017ATMA1 | 2.7900 | |
3964 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | IAUC120 | MOSFET (Metal Oxide) | PG-TDSON-8-43 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 120A (Tj) | 1.7mOhm @ 60A, 10V | 3.4V @ 94µA | 95.9 nC @ 10 V | ±20V | 6952 pF @ 30 V | - | 167W (Tc) | ||||||||||||||||||||||||||||||||
|
IAUC120N06S5L032ATMA1 | 1.6500 | |
28 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | IAUC120 | MOSFET (Metal Oxide) | PG-TDSON-8-34 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 120A (Tj) | 3.2mOhm @ 60A, 10V | 2.2V @ 44µA | 51.5 nC @ 10 V | ±16V | 3823 pF @ 30 V | - | 94W (Tc) | ||||||||||||||||||||||||||||||||
 |
IMBG120R090M1HXTMA1 | 12.7700 | |
2 | 0.00000000 | Infineon Technologies | CoolSiC™ | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | IMBG120 | SiCFET (Silicon Carbide) | PG-TO263-7-12 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 1200 V | 26A (Tc) | 125mOhm @ 8.5A, 18V | 5.7V @ 3.7mA | 23 nC @ 18 V | +18V, -15V | 763 pF @ 800 V | Standard | 136W (Tc) | ||||||||||||||||||||||||||||||||
 |
IMBG120R350M1HXTMA1 | 8.7800 | |
980 | 0.00000000 | Infineon Technologies | CoolSiC™ | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | IMBG120 | SiCFET (Silicon Carbide) | PG-TO263-7-12 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 1200 V | 4.7A (Tc) | 468mOhm @ 2A, 18V | 5.7V @ 1mA | 5.9 nC @ 18 V | +18V, -15V | 196 pF @ 800 V | Standard | 65W (Tc) |
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