Tel: +86-0755-83501315
Email: sales@sic-components.com
Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Voltage - Test |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
HUFA76413D3S | 0.2700 | ![]() |
8 | 0.00000000 | Fairchild Semiconductor | UltraFET™ | Tube | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252, (D-Pak) | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 1,800 | N-Channel | 60 V | 20A (Tc) | 4.5V, 10V | 49mOhm @ 20A, 10V | 3V @ 250µA | 20 nC @ 10 V | ±16V | 645 pF @ 25 V | - | 60W (Tc) | |||||||||||||||
![]() |
RJK1001DPN-E0#T2 | - | ![]() |
3926 | 0.00000000 | Renesas Electronics America Inc | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | - | Not applicable | EAR99 | 8541.29.0095 | 1 | N-Channel | 100 V | 80A (Ta) | 5.5mOhm @ 40A, 10V | - | 147 nC @ 10 V | 10 pF @ 10 V | - | 200W (Tc) | |||||||||||||||||
![]() |
FQP5N30 | 0.4400 | ![]() |
2 | 0.00000000 | Fairchild Semiconductor | QFET® | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220-3 | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 300 V | 5.4A (Tc) | 10V | 900mOhm @ 2.7A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±30V | 430 pF @ 25 V | - | 70W (Tc) | |||||||||||||||
![]() |
FQP5P20 | 1.0000 | ![]() |
1738 | 0.00000000 | Fairchild Semiconductor | QFET® | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220-3 | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 1,000 | P-Channel | 200 V | 4.8A (Tc) | 10V | 1.4Ohm @ 2.4A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±30V | 430 pF @ 25 V | - | 75W (Tc) | |||||||||||||||
![]() |
HUFA76445S3S | 1.0600 | ![]() |
500 | 0.00000000 | Fairchild Semiconductor | UltraFET™ | Tube | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK (TO-263) | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 75A (Tc) | 4.5V, 10V | 6.5mOhm @ 75A, 10V | 3V @ 250µA | 150 nC @ 10 V | ±16V | 4965 pF @ 25 V | - | 310W (Tc) | |||||||||||||||
![]() |
FDS9933BZ | 0.5100 | ![]() |
11 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | FDS99 | MOSFET (Metal Oxide) | 900mW | 8-SOIC | download | ROHS3 Compliant | EAR99 | 8541.21.0095 | 2,500 | 2 P-Channel (Dual) | 20V | 4.9A | 46mOhm @ 4.9A, 4.5V | 1.5V @ 250µA | 15nC @ 4.5V | 985pF @ 10V | Logic Level Gate | ||||||||||||||||
![]() |
FDS6694 | 0.4600 | ![]() |
28 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SOIC | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 12A (Ta) | 4.5V, 10V | 11mOhm @ 12A, 10V | 3V @ 250µA | 19 nC @ 5 V | ±20V | 1293 pF @ 15 V | - | 2.5W (Ta) | |||||||||||||||
![]() |
FQD3N30TF | 0.2900 | ![]() |
1 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252, (D-Pak) | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 300 V | 2.4A (Tc) | 10V | 2.2Ohm @ 1.2A, 10V | 5V @ 250µA | 7 nC @ 10 V | ±30V | 230 pF @ 25 V | - | 2.5W (Ta), 30W (Tc) | |||||||||||||||
![]() |
FDMS3616S | 0.8300 | ![]() |
65 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Obsolete | Surface Mount | 8-PowerTDFN | FDMS3616 | MOSFET (Metal Oxide) | 1W | 8-PQFN (5x6) | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) Asymmetrical | 25V | 16A, 18A | 6.6mOhm @ 16A, 10V | 2.5V @ 250µA | 27nC @ 10V | 1765pF @ 13V | Logic Level Gate | |||||||||||||||||
![]() |
FQAF19N20L | 1.0900 | ![]() |
1 | 0.00000000 | Fairchild Semiconductor | QFET® | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | MOSFET (Metal Oxide) | TO-3PF | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 360 | N-Channel | 200 V | 16A (Tc) | 5V, 10V | 140mOhm @ 8A, 10V | 2V @ 250µA | 35 nC @ 5 V | ±20V | 2200 pF @ 25 V | - | 85W (Tc) | |||||||||||||||
![]() |
NDF06N60ZH | 0.4200 | ![]() |
6855 | 0.00000000 | Sanyo | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220-3 Full Pack | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 6A (Tj) | 1.2Ohm @ 3A, 10V | 4.5V @ 100µA | 31 nC @ 10 V | ±30V | 923 pF @ 25 V | - | 31W (Tc) | ||||||||||||||||
![]() |
FDC6432SH | 0.4400 | ![]() |
45 | 0.00000000 | Fairchild Semiconductor | PowerTrench®, SyncFET™ | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | FDC6432 | MOSFET (Metal Oxide) | 700mW | SuperSOT™-6 | download | ROHS3 Compliant | EAR99 | 8541.21.0095 | 3,000 | N and P-Channel | 30V, 12V | 2.4A, 2.5A | 90mOhm @ 2.4A, 10V | 3V @ 1mA | 3.5nC @ 5V | 270pF @ 15V | Logic Level Gate | ||||||||||||||||
![]() |
BUK7511-55B,127 | 0.4000 | ![]() |
2 | 0.00000000 | NXP USA Inc. | TrenchMOS™ | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 50 | N-Channel | 55 V | 75A (Tc) | 10V | 11mOhm @ 25A, 10V | 4V @ 1mA | 37 nC @ 10 V | ±20V | 2604 pF @ 25 V | - | 157W (Tc) | |||||||||||||||
![]() |
FQP7P20 | 0.5900 | ![]() |
1 | 0.00000000 | Fairchild Semiconductor | QFET® | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220-3 | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 1,000 | P-Channel | 200 V | 7.3A (Tc) | 10V | 690mOhm @ 3.65A, 10V | 5V @ 250µA | 25 nC @ 10 V | ±30V | 770 pF @ 25 V | - | 90W (Tc) | |||||||||||||||
![]() |
BLF7G24L-100,112 | 62.7300 | ![]() |
37 | 0.00000000 | NXP USA Inc. | - | Tube | Obsolete | 65 V | Chassis Mount | SOT-502A | 2.3GHz ~ 2.4GHz | LDMOS | SOT502A | download | ROHS3 Compliant | 5A991G | 8541.29.0075 | 20 | 28A | 900 mA | 20W | 18dB | - | 28 V | |||||||||||||||||||
![]() |
FQPF2N90 | 1.2000 | ![]() |
52 | 0.00000000 | Fairchild Semiconductor | QFET® | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 900 V | 1.4A (Tc) | 10V | 7.2Ohm @ 700mA, 10V | 5V @ 250µA | 15 nC @ 10 V | ±30V | 500 pF @ 25 V | - | 35W (Tc) | |||||||||||||||
![]() |
SIZ342ADT-T1-GE3 | 0.8600 | ![]() |
3 | 0.00000000 | Vishay Siliconix | TrenchFET® Gen IV | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | SIZ342 | MOSFET (Metal Oxide) | 3.7W (Ta), 16.7W (Tc) | 8-Power33 (3x3) | download | ROHS3 Compliant | 1 (Unlimited) | 742-SIZ342ADT-T1-GE3CT | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) | 30V | 15.7A (Ta), 33.4A (Tc) | 9.4mOhm @ 10A, 10V | 2.4V @ 250µA | 12.2nC @ 10V | 580pF @ 15V | - | ||||||||||||||
![]() |
SIHB105N60EF-GE3 | 3.8300 | ![]() |
3134 | 0.00000000 | Vishay Siliconix | EF | Tube | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIHB105 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 29A (Tc) | 10V | 102mOhm @ 13A, 10V | 5V @ 250µA | 53 nC @ 10 V | ±30V | 1804 pF @ 100 V | - | 208W (Tc) | |||||||||||||
![]() |
2N7002 | 0.2800 | ![]() |
27 | 0.00000000 | NTE Electronics, Inc | - | Bag | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2N7002 | MOSFET (Metal Oxide) | SOT-23-3 | download | RoHS non-compliant | 2368-2N7002 | EAR99 | 8541.21.0095 | 1 | N-Channel | 60 V | 115mA (Ta) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | ±20V | 50 pF @ 25 V | - | 200mW (Ta) | ||||||||||||||
![]() |
IPD90P04P405ATMA2 | 2.9100 | ![]() |
5959 | 0.00000000 | Infineon Technologies | OptiMOS®-P2 | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IPD90 | MOSFET (Metal Oxide) | PG-TO252-3-313 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 40 V | 90A (Tc) | 10V | 4.7mOhm @ 90A, 10V | 4V @ 250µA | 154 nC @ 10 V | ±20V | 10300 pF @ 25 V | - | 125W (Tc) | ||||||||||||
![]() |
IPD90P04P4L04ATMA2 | 3.2600 | ![]() |
3044 | 0.00000000 | Infineon Technologies | OptiMOS®-P2 | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IPD90 | MOSFET (Metal Oxide) | PG-TO252-3-313 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 40 V | 90A (Tc) | 4.5V, 10V | 4.3mOhm @ 90A, 10V | 2.2V @ 250µA | 176 nC @ 10 V | +5V, -16V | 11570 pF @ 25 V | - | 125W (Tc) | ||||||||||||
![]() |
NTE2382 | 4.7900 | ![]() |
639 | 0.00000000 | NTE Electronics, Inc | - | Bag | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 2368-NTE2382 | EAR99 | 8541.29.0095 | 1 | N-Channel | 100 V | 9.2A (Tc) | 10V | 270mOhm @ 4.6A, 10V | 4V @ 250µA | 23 nC @ 10 V | ±20V | 400 pF @ 25 V | - | 50W (Tc) | ||||||||||||||
![]() |
NTE2392 | 32.7600 | ![]() |
877 | 0.00000000 | NTE Electronics, Inc | - | Bag | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | TO-3 | download | ROHS3 Compliant | 2368-NTE2392 | EAR99 | 8541.29.0095 | 1 | N-Channel | 100 V | 40A (Tc) | 10V | 55mOhm @ 20A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 150W (Tc) | ||||||||||||||
![]() |
NTE2378 | 6.9800 | ![]() |
104 | 0.00000000 | NTE Electronics, Inc | - | Bag | Active | 150°C | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3P | download | ROHS3 Compliant | 2368-NTE2378 | EAR99 | 8541.29.0095 | 1 | N-Channel | 900 V | 5A (Ta) | 10V | 3.6Ohm @ 2A, 10V | 3V @ 1mA | ±30V | 700 pF @ 20 V | - | 120W (Tc) | |||||||||||||||
![]() |
BS170 | 0.9300 | ![]() |
93 | 0.00000000 | NTE Electronics, Inc | - | Bag | Active | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | MOSFET (Metal Oxide) | TO-92 | download | RoHS non-compliant | 2368-BS170 | EAR99 | 8541.21.0095 | 1 | N-Channel | 60 V | 300mA (Ta) | 5Ohm @ 200mA, 10V | 3V @ 1mA | 60 pF @ 10 V | - | |||||||||||||||||||
![]() |
NTE66 | 6.4400 | ![]() |
257 | 0.00000000 | NTE Electronics, Inc | - | Bag | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 2368-NTE66 | EAR99 | 8541.29.0095 | 1 | N-Channel | 100 V | 14A (Tc) | 10V | 160mOhm @ 8.3A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 77W (Tc) | ||||||||||||||
![]() |
2N3819 | 1.7800 | ![]() |
583 | 0.00000000 | NTE Electronics, Inc | - | Bag | Active | 25 V | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | - | JFET | TO-92-3 | download | RoHS non-compliant | 2368-2N3819 | EAR99 | 8541.21.0095 | 1 | N-Channel | - | - | - | - | |||||||||||||||||||
![]() |
BLP2425M10S250PY | 55.7500 | ![]() |
63 | 0.00000000 | Ampleon USA Inc. | - | Tape & Reel (TR) | Active | 65 V | Surface Mount | OMP-780-4F-1 | BLP2425 | 2.4GHz ~ 2.5GHz | LDMOS | OMP-780-4F-1 | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0075 | 100 | Dual, Common Source | 2.8µA | 100 mA | 250W | 15dB | - | 32 V | |||||||||||||||
![]() |
BPF0910H9X600Z | - | ![]() |
2406 | 0.00000000 | Ampleon USA Inc. | - | Tray | Obsolete | 106 V | Module | BPF0910 | 902MHz ~ 928MHz | LDMOS | Module | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0075 | 2 | 2.8µA | 90 mA | 600W | 19dB | - | 50 V | |||||||||||||||||
![]() |
SIJ462ADP-T1-GE3 | 1.4600 | ![]() |
11 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | SIJ462 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | ROHS3 Compliant | 1 (Unlimited) | 742-SIJ462ADP-T1-GE3TR | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 15.8A (Ta), 39.3A (Tc) | 4.5V, 10V | 7.2mOhm @ 10A, 10V | 2.5V @ 250µA | 30 nC @ 10 V | ±20V | 1235 pF @ 30 V | - | 3.6W (Ta), 22.3W (Tc) |
Daily average RFQ Volume
Standard Product Unit
Worldwide Manufacturers
In-stock Warehouse