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FETs, MOSFETs(55612)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FQPF17N08L | - |  |
3054 | 0.00000000 | onsemi | QFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | FQPF1 | MOSFET (Metal Oxide) | TO-220F-3 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 80 V | 11.2A (Tc) | 5V, 10V | 100mOhm @ 5.6A, 10V | 2V @ 250µA | 11.5 nC @ 5 V | ±20V | 520 pF @ 25 V | - | 30W (Tc) | |||||||||||
 |
IPD038N04NGBTMA1 | - | |
7365 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tape & Reel (TR) | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IPD038N | MOSFET (Metal Oxide) | PG-TO252-3 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 40 V | 90A (Tc) | 10V | 3.8mOhm @ 90A, 10V | 4V @ 45µA | 56 nC @ 10 V | ±20V | 4500 pF @ 20 V | - | 94W (Tc) | |||||||||||
 |
NTGD4167CT1G | 0.6700 | |
949 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | NTGD4167 | MOSFET (Metal Oxide) | 900mW | 6-TSOP | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | N and P-Channel | 30V | 2.6A, 1.9A | 90mOhm @ 2.6A, 4.5V | 1.5V @ 250µA | 5.5nC @ 4.5V | 295pF @ 15V | Logic Level Gate | ||||||||||||
 |
FDMS8670S | - | |
8830 | 0.00000000 | Fairchild Semiconductor | PowerTrench®, SyncFET™ | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-PQFN (5x6) | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 30 V | 20A (Ta), 42A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 3V @ 1mA | 73 nC @ 10 V | ±20V | 4000 pF @ 15 V | - | 2.5W (Ta), 78W (Tc) | ||||||||||||||
 |
AO3418L_101 | - | |
4445 | 0.00000000 | Alpha & Omega Semiconductor Inc. | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 3-SMD, SOT-23-3 Variant | AO34 | MOSFET (Metal Oxide) | SOT-23-3 | - | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 3.8A (Ta) | 2.5V, 10V | 60mOhm @ 3.8A, 10V | 1.8V @ 250µA | 3.6 nC @ 4.5 V | ±12V | 270 pF @ 15 V | - | 1.4W (Ta) | |||||||||||
 |
BSP89 E6327 | - | |
8535 | 0.00000000 | Infineon Technologies | SIPMOS® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 240 V | 350mA (Ta) | 4.5V, 10V | 6Ohm @ 350mA, 10V | 1.8V @ 108µA | 6.4 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 1.8W (Ta) | |||||||||||
 |
IXFA80N25X3 | 9.9500 | |
9977 | 0.00000000 | IXYS | HiPerFET™, Ultra X3 | Tube | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IXFA80 | MOSFET (Metal Oxide) | TO-263 (D2Pak) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 250 V | 80A (Tc) | 10V | 16mOhm @ 40A, 10V | 4.5V @ 1.5mA | 83 nC @ 10 V | ±20V | 5430 pF @ 25 V | - | 390W (Tc) | ||||||||||
 |
IXTU8N70X2 | 4.1400 | |
65 | 0.00000000 | IXYS | Ultra X2 | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | IXTU8 | MOSFET (Metal Oxide) | TO-251-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | -IXTU8N70X2 | EAR99 | 8541.29.0095 | 70 | N-Channel | 700 V | 8A (Tc) | 10V | 500mOhm @ 500mA, 10V | 4.5V @ 250µA | 12 nC @ 10 V | ±30V | 800 pF @ 10 V | - | 150W (Tc) | |||||||||
 |
FQPF2N80YDTU | 2.2200 | |
2 | 0.00000000 | onsemi | QFET® | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Formed Leads | FQPF2 | MOSFET (Metal Oxide) | TO-220F-3 (Y-Forming) | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 800 V | 1.5A (Tc) | 10V | 6.3Ohm @ 750mA, 10V | 5V @ 250µA | 15 nC @ 10 V | ±30V | 550 pF @ 25 V | - | 35W (Tc) | ||||||||||
 |
MHTG1200HSR3 | 99.3479 | |
2583 | 0.00000000 | NXP USA Inc. | - | Tape & Reel (TR) | Active | 50 V | Surface Mount | NI-780S-4L | 2.4GHz ~ 2.5GHz | GaN | NI-780S-4L | - | ROHS3 Compliant | REACH Unaffected | 568-MHTG1200HSR3TR | EAR99 | 8541.29.0095 | 250 | 2 N-Channel | - | 300W | - | - | ||||||||||||||||
 |
FDFS2P103A | 0.4300 | |
11 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SOIC | download | ROHS3 Compliant | EAR99 | 8541.21.0095 | 2,500 | P-Channel | 30 V | 5.3A (Ta) | 4.5V, 10V | 59mOhm @ 5.3A, 10V | 3V @ 250µA | 8 nC @ 5 V | ±25V | 535 pF @ 15 V | Schottky Diode (Isolated) | 900mW (Ta) | |||||||||||||
 |
IPI80N06S3-07 | - | |
7265 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | IPI80N | MOSFET (Metal Oxide) | PG-TO262-3 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 500 | N-Channel | 55 V | 80A (Tc) | 10V | 6.8mOhm @ 51A, 10V | 4V @ 80µA | 170 nC @ 10 V | ±20V | 7768 pF @ 25 V | - | 135W (Tc) | |||||||||||
 |
DMN3031LSS-13 | - | |
3041 | 0.00000000 | Diodes Incorporated | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | DMN3031 | MOSFET (Metal Oxide) | 8-SOP | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 9A (Ta) | 4.5V, 10V | 18.5mOhm @ 9A, 10V | 2.1V @ 250µA | 25 nC @ 10 V | ±20V | 741 pF @ 15 V | - | 2.5W (Ta) | ||||||||||
 |
AON6936 | - | |
2571 | 0.00000000 | Alpha & Omega Semiconductor Inc. | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | AON693 | MOSFET (Metal Oxide) | 3.6W, 4.3W | 8-DFN (5x6) | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Half Bridge) | 30V | 22A, 40A | 4.9mOhm @ 20A, 10V | 2.5V @ 250µA | 24nC @ 10V | 984pF @ 15V | Logic Level Gate | |||||||||||||
 |
VS-FC420SA10 | 23.7600 | |
6400 | 0.00000000 | Vishay General Semiconductor - Diodes Division | - | Tube | Active | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | FC420 | MOSFET (Metal Oxide) | SOT-227 | download | Not Applicable | REACH Unaffected | EAR99 | 8541.29.0095 | 10 | N-Channel | 100 V | 435A (Tc) | 10V | 2.15mOhm @ 200A, 10V | 3.8V @ 750µA | 375 nC @ 10 V | ±20V | 17300 pF @ 25 V | - | 652W (Tc) | |||||||||||
 |
STP200NF04 | - | |
1513 | 0.00000000 | STMicroelectronics | STripFET™ II | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | STP200 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 40 V | 120A (Tc) | 10V | 3.7mOhm @ 90A, 10V | 4V @ 250µA | 210 nC @ 10 V | ±20V | 5100 pF @ 25 V | - | 310W (Tc) | ||||||||||
 |
PHU66NQ03LT,127 | - | |
9126 | 0.00000000 | NXP USA Inc. | TrenchMOS™ | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PHU66 | MOSFET (Metal Oxide) | I-Pak | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 75 | N-Channel | 25 V | 66A (Tc) | 5V, 10V | 10.5mOhm @ 25A, 10V | 2V @ 1mA | 12 nC @ 5 V | ±20V | 860 pF @ 25 V | - | 93W (Tc) | ||||||||||
 |
DMN33D8LVQ-13 | 0.4500 | |
10 | 0.00000000 | Diodes Incorporated | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | DMN33 | MOSFET (Metal Oxide) | 430mW (Ta) | SOT-563 | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 2 N-Channel (Dual) | 30V | 350mA (Ta) | 2.4Ohm @ 250mA, 10V | 1.5V @ 100µA | 1.23nC @ 10V | 48pF @ 5V | Standard | |||||||||||||
 |
TK56E12N1,S1X | 1.6800 | |
7085 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK56E12 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 120 V | 56A (Ta) | 10V | 7mOhm @ 28A, 10V | 4V @ 1mA | 69 nC @ 10 V | ±20V | 4200 pF @ 60 V | - | 168W (Tc) | |||||||||||
 |
GT180P08T | 1.7100 | |
5202 | 0.00000000 | Goford Semiconductor | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | RoHS Compliant | REACH Unaffected | 3141-GT180P08T | EAR99 | 8541.29.0000 | 50 | P-Channel | 40 V | 89A (Tc) | 4.5V, 10V | 17mOhm @ 20A, 10V | 2.5V @ 250µA | 62 nC @ 10 V | ±20V | 6040 pF @ 40 V | - | 245W (Tc) | |||||||||||
 |
EPC2038 | 1.2800 | |
214 | 0.00000000 | EPC | eGaN® | Tape & Reel (TR) | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | EPC20 | GaNFET (Gallium Nitride) | Die | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0040 | 2,500 | N-Channel | 100 V | 500mA (Ta) | 5V | 3.3Ohm @ 50mA, 5V | 2.5V @ 20µA | 0.044 nC @ 5 V | +6V, -4V | 8.4 pF @ 50 V | - | - | ||||||||||
 |
IPT65R033G7XTMA1 | 19.6600 | |
2 | 0.00000000 | Infineon Technologies | CoolMOS™ C7 | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSFN | IPT65R033 | MOSFET (Metal Oxide) | PG-HSOF-8-2 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 650 V | 69A (Tc) | 10V | 33mOhm @ 28.9A, 10V | 4V @ 1.44mA | 110 nC @ 10 V | ±20V | 5000 pF @ 400 V | - | 391W (Tc) | ||||||||||
 |
IRFS7437TRLPBF | 2.1200 | |
8 | 0.00000000 | Infineon Technologies | HEXFET®, StrongIRFET™ | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IRFS7437 | MOSFET (Metal Oxide) | TO-263AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | N-Channel | 40 V | 195A (Tc) | 6V, 10V | 1.8mOhm @ 100A, 10V | 3.9V @ 150µA | 225 nC @ 10 V | ±20V | 7330 pF @ 25 V | - | 230W (Tc) | ||||||||||
 |
NTDV2955-1G | - | |
7071 | 0.00000000 | onsemi | - | Tube | Obsolete | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | NTDV29 | - | I-Pak | - | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 75 | - | 12A (Ta) | - | - | - | - | ||||||||||||||||
|
IPI70N04S307AKSA1 | - | |
9352 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | IPI70N | MOSFET (Metal Oxide) | PG-TO262-3 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 500 | N-Channel | 40 V | 80A (Tc) | 10V | 6.5mOhm @ 70A, 10V | 4V @ 50µA | 40 nC @ 10 V | ±20V | 2700 pF @ 25 V | - | 79W (Tc) | |||||||||||
 |
IRFU1010ZPBF | - | |
2678 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | IPAK (TO-251AA) | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 75 | N-Channel | 55 V | 42A (Tc) | 10V | 7.5mOhm @ 42A, 10V | 4V @ 100µA | 95 nC @ 10 V | ±20V | 2840 pF @ 25 V | - | 140W (Tc) | ||||||||||||
 |
IRFSL33N15D | - | |
5995 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | TO-262 | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | *IRFSL33N15D | EAR99 | 8541.29.0095 | 50 | N-Channel | 150 V | 33A (Tc) | 10V | 56mOhm @ 20A, 10V | 5.5V @ 250µA | 90 nC @ 10 V | ±30V | 2020 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | ||||||||||
 |
SI3442BDV-T1-GE3 | 0.2284 | |
3719 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SI3442 | MOSFET (Metal Oxide) | 6-TSOP | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 3A (Ta) | 2.5V, 4.5V | 57mOhm @ 4A, 4.5V | 1.8V @ 250µA | 5 nC @ 4.5 V | ±12V | 295 pF @ 10 V | - | 860mW (Ta) | |||||||||||
 |
DMTH6016LFDFW-13 | 0.2443 | |
9958 | 0.00000000 | Diodes Incorporated | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DMTH6016 | MOSFET (Metal Oxide) | U-DFN2020-6 (SWP) (Type F) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 10,000 | N-Channel | 60 V | 9.4A (Ta) | 4.5V, 10V | 18mOhm @ 10A, 10V | 3V @ 250µA | 15.3 nC @ 10 V | ±20V | 925 pF @ 30 V | - | 1.06W (Ta) | ||||||||||
 |
SSM6J424TU,LF | 0.4700 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6J424 | MOSFET (Metal Oxide) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 6A (Ta) | 1.5V, 4.5V | 22.5mOhm @ 6A, 4.5V | 1V @ 1mA | 23.1 nC @ 4.5 V | +6V, -8V | 1650 pF @ 10 V | - | 1W (Ta) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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