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FETs, MOSFETs(55612)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMJ70H600HK3-13 | 1.7000 |  |
4648 | 0.00000000 | Diodes Incorporated | Automotive, AEC-Q101 | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DMJ70 | MOSFET (Metal Oxide) | TO-252, (D-Pak) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 700 V | 7.6A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 5V @ 250µA | 17.4 nC @ 10 V | ±30V | 570 pF @ 25 V | - | 90W (Tc) | |||||
 |
IAUA250N04S6N008AUMA1 | 3.3100 | |
1 | 0.00000000 | Infineon Technologies | Automotive, AEC-Q101, OptiMOS™ 6 | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 5-PowerSFN | IAUA250 | MOSFET (Metal Oxide) | PG-HSOF-5-1 | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 40 V | 51A (Ta) | 7V, 10V | 0.8mOhm @ 100A, 10V | 3V @ 90µA | 109 nC @ 10 V | ±20V | 7088 pF @ 25 V | - | 172W (Tc) | ||||
 |
TW107N65C,S1F | 9.6200 | |
96 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 20A (Tc) | 18V | 145mOhm @ 10A, 18V | 5V @ 1.2mA | 21 nC @ 18 V | +25V, -10V | 600 pF @ 400 V | - | 76W (Tc) | ||||||
 |
NTMFS4935NT1G-IRH1 | - | |
6544 | 0.00000000 | onsemi | - | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | MOSFET (Metal Oxide) | 5-DFN (5x6) (8-SOFL) | - | REACH Unaffected | 488-NTMFS4935NT1G-IRH1 | EAR99 | 8541.29.0095 | 1 | N-Channel | 30 V | 13A (Ta), 93A (Tc) | 4.5V, 10V | 3.2mOhm @ 30A, 10V | 2.2V @ 250µA | 49.4 nC @ 10 V | ±20V | 4850 pF @ 15 V | - | 930mW (Ta), 48W (Tc) | ||||||
 |
TPW2R508NH,L1Q | 2.8100 | |
1661 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerWDFN | MOSFET (Metal Oxide) | 8-DSOP Advance | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 75 V | 150A (Ta) | 10V | 2.5mOhm @ 50A, 10V | 4V @ 1mA | 72 nC @ 10 V | ±20V | 6000 pF @ 37.5 V | - | 800mW (Ta), 142W (Tc) | |||||||
|
TK25A20D,S5X | 1.7900 | |
40 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 200 V | 25A (Ta) | 10V | 70mOhm @ 12.5A, 10V | 3.5V @ 1mA | 60 nC @ 10 V | ±20V | 2550 pF @ 100 V | - | 45W (Tc) | ||||||
|
TK22V65X5,LQ | 5.6600 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 4-VSFN Exposed Pad | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 650 V | 22A (Ta) | 10V | 170mOhm @ 11A, 10V | 4.5V @ 1.1mA | 50 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | ||||||
|
TK14V65W,LQ | 3.4800 | |
2719 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | 4-VSFN Exposed Pad | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 650 V | 13.7A (Ta) | 10V | 280mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35 nC @ 10 V | ±30V | 1300 pF @ 300 V | - | 139W (Tc) | ||||||
|
SSM3J15CT,L3F | 0.3100 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | SC-101, SOT-883 | MOSFET (Metal Oxide) | CST3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | P-Channel | 30 V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | 1.7V @ 100µA | ±20V | 9.1 pF @ 3 V | - | 100mW (Ta) | |||||||
 |
YJQ4666B | 0.0320 | |
300 | 0.00000000 | Yangjie Technology | - | Tape & Reel (TR) | Active | - | RoHS Compliant | REACH Unaffected | 4617-YJQ4666BTR | EAR99 | 3,000 | ||||||||||||||||||||||
 |
YJG60G10A | 0.4660 | |
500 | 0.00000000 | Yangjie Technology | - | Tape & Reel (TR) | Active | - | RoHS Compliant | REACH Unaffected | 4617-YJG60G10ATR | EAR99 | 5,000 | ||||||||||||||||||||||
 |
YJS4953A | 0.0980 | |
400 | 0.00000000 | Yangjie Technology | - | Tape & Reel (TR) | Active | - | RoHS Compliant | REACH Unaffected | 4617-YJS4953ATR | EAR99 | 4,000 | ||||||||||||||||||||||
 |
YJL2102W | 0.0250 | |
300 | 0.00000000 | Yangjie Technology | - | Tape & Reel (TR) | Active | - | RoHS Compliant | REACH Unaffected | 4617-YJL2102WTR | EAR99 | 3,000 | ||||||||||||||||||||||
 |
YJL2301C | 0.0350 | |
300 | 0.00000000 | Yangjie Technology | - | Tape & Reel (TR) | Active | - | RoHS Compliant | REACH Unaffected | 4617-YJL2301CTR | EAR99 | 3,000 | ||||||||||||||||||||||
 |
YJS8205A | 0.0560 | |
300 | 0.00000000 | Yangjie Technology | - | Tape & Reel (TR) | Active | - | RoHS Compliant | REACH Unaffected | 4617-YJS8205ATR | EAR99 | 3,000 | ||||||||||||||||||||||
|
DF15MR12W1M1B67BOMA1 | - | |
1571 | 0.00000000 | Infineon Technologies | - | Bulk | Obsolete | DF15MR12 | - | - | OBSOLETE | 1 | - | ||||||||||||||||||||||
|
FF11MR12W1M1C11BPSA1 | - | |
9433 | 0.00000000 | Infineon Technologies | - | Tray | Obsolete | FF11MR12 | - | - | OBSOLETE | 1 | - | ||||||||||||||||||||||
|
TK5P65W,RQ | 1.3700 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 650 V | 5.2A (Ta) | 10V | 1.22Ohm @ 2.6A, 10V | 3.5V @ 170µA | 10.5 nC @ 10 V | ±30V | 380 pF @ 300 V | - | 60W (Tc) | ||||||
|
PJMB210N65EC_R2_00601 | 2.2700 | |
276 | 0.00000000 | Panjit International Inc. | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PJMB210 | MOSFET (Metal Oxide) | TO-263 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 3757-PJMB210N65EC_R2_00601CT | EAR99 | 8541.29.0095 | 800 | N-Channel | 650 V | 19A (Tc) | 10V | 210mOhm @ 9.5A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±30V | 1412 pF @ 400 V | - | 150W (Tc) | |||
|
IPP014N06NF2SAKMA1 | - | |
9015 | 0.00000000 | Infineon Technologies | StrongIRFET™2 | Tape & Reel (TR) | Discontinued at SIC | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | PG-TO220-3-U05 | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 448-IPP014N06NF2SAKMA1TR | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 60 V | 39A (Ta), 198A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.3V @ 246µA | 305 nC @ 10 V | ±20V | 13800 pF @ 30 V | - | 3.8W (Ta), 300W (Tc) | ||||
|
IMT65R048M1HXUMA1 | 14.7100 | |
6980 | 0.00000000 | Infineon Technologies | CoolSiC™ | Tape & Reel (TR) | Active | - | Surface Mount | 8-PowerSFN | SiCFET (Silicon Carbide) | PG-HSOF-8-1 | - | ROHS3 Compliant | Not Applicable | REACH Unaffected | EAR99 | 8541.29.0095 | 2,000 | - | 650 V | - | 18V | - | - | - | - | - | |||||||
 |
G180N06S2 | 0.8000 | |
4 | 0.00000000 | Goford Semiconductor | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | G180 | MOSFET (Metal Oxide) | 2W (Tc) | 8-SOP | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0095 | 4,000 | 2 N-Channel (Dual) | 60V | 8A (Tc) | 20mOhm @ 6A, 10V | 2.4V @ 250µA | 58nC @ 10V | 2330pF @ 30V | Standard | ||||||
 |
MCAC80N06YA-TP | - | |
3127 | 0.00000000 | Micro Commercial Co | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MCAC80 | MOSFET (Metal Oxide) | DFN5060 | download | ROHS3 Compliant | 353-MCAC80N06YA-TP | EAR99 | 8541.29.0095 | 1 | N-Channel | 60 V | 80A (Tc) | 4.5V, 10V | 2.5mOhm @ 20A, 10V | 2.5V @ 250µA | 99 nC @ 10 V | ±20V | 4894 pF @ 30 V | - | 85W (Tc) | |||||
 |
RS6L120BGTB1 | 3.5900 | |
2 | 0.00000000 | Rohm Semiconductor | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-HSOP | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 60 V | 120A (Ta) | 4.5V, 10V | 2.7mOhm @ 90A, 10V | 2.5V @ 1mA | 51 nC @ 10 V | ±20V | 3520 pF @ 30 V | - | 104W (Tj) | |||||
 |
IRFP4468PBFXKMA1 | 9.1000 | |
2746 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247AC | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 25 | N-Channel | 100 V | 290A (Tc) | 10V | 2.6mOhm @ 180A, 10V | 4V @ 250µA | 540 nC @ 10 V | ±20V | 19860 pF @ 50 V | - | 520W (Tc) | |||||
 |
SIL03N10A-TP | 0.1816 | |
6092 | 0.00000000 | Micro Commercial Co | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SIL03N10 | MOSFET (Metal Oxide) | SOT-23-6L | download | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 100 V | 3A (Ta) | 4.5V, 10V | 120mOhm @ 3A, 10V | 3V @ 250µA | 26 nC @ 10 V | ±20V | 1070 pF @ 50 V | - | 1.5W | |||||
 |
DI025N06PT | 0.1919 | |
4858 | 0.00000000 | Diotec Semiconductor | - | Tape & Reel (TR) | Active | Surface Mount | PowerQFN 3x3 | download | ROHS3 Compliant | 1 (Unlimited) | Vendor Undefined | 2796-DI025N06PTTR | 8541.29.0000 | 5,000 | N-Channel | 25A | 25W | ||||||||||||||||
 |
DI028N10PQ2-AQ | 1.6588 | |
6387 | 0.00000000 | Diotec Semiconductor | - | Tape & Reel (TR) | Active | Surface Mount | PowerQFN 5x6 | download | ROHS3 Compliant | 1 (Unlimited) | Vendor Undefined | 2796-DI028N10PQ2-AQTR | 8541.29.0000 | 5,000 | N-Channel | 28A | 28W | ||||||||||||||||
 |
DI064P04D1-AQ | 1.3932 | |
6605 | 0.00000000 | Diotec Semiconductor | - | Tape & Reel (TR) | Active | Surface Mount | D-PAK (TO-252AA) | download | ROHS3 Compliant | 1 (Unlimited) | Vendor Undefined | 2796-DI064P04D1-AQTR | 8541.29.0000 | 2,500 | P-Channel | 64A | 48.3W | ||||||||||||||||
 |
SIR184LDP-T1-RE3 | 1.5300 | |
40 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 21.5A (Ta), 73A (Tc) | 4.5V, 10V | 5.4mOhm @ 10A, 10V | 3V @ 250µA | 41 nC @ 10 V | ±20V | 1950 pF @ 30 V | - | 5W (Ta), 56.8W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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