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Transistors(61)

Image Product Number Pricing(USD) Quantity ECAD Quantity Available Weight(Kg) Mfr Series Package Product Status Operating Temperature Mounting Type Package / Case Base Product Number Input Type Technology Supplier Device Package DataSheet RoHS Status Moisture Sensitivity Level (MSL) REACH Status Other Names ECCN HTSUS Standard Package FET Type Test Condition Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Reverse Recovery Time (trr) IGBT Type Voltage - Collector Emitter Breakdown (Max) Current - Collector Pulsed (Icm) Vce(on) (Max) @ Vge, Ic Switching Energy Gate Charge Td (on/off) @ 25°C
G3R75MT12J GeneSiC Semiconductor G3R75MT12J 11.0300
RFQ
 ECAD 9581 0.00000000 GeneSiC Semiconductor G3R™ Tube Active -55°C ~ 175°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA G3R75 SiCFET (Silicon Carbide) TO-263-7 download RoHS Compliant 1 (Unlimited) 1242-G3R75MT12J EAR99 8541.29.0095 50 N-Channel 1200 V 42A (Tc) 15V 90mOhm @ 20A, 15V 2.69V @ 7.5mA 54 nC @ 15 V ±15V 1560 pF @ 800 V - 224W (Tc)
GA05JT01-46 GeneSiC Semiconductor GA05JT01-46 -
RFQ
 ECAD 7264 0.00000000 GeneSiC Semiconductor - Bulk Obsolete -55°C ~ 225°C (TJ) Through Hole TO-46-3 SiC (Silicon Carbide Junction Transistor) TO-46 download RoHS Compliant 1 (Unlimited) 1242-1251 EAR99 8541.29.0095 200 - 100 V 9A (Tc) - 240mOhm @ 5A - - - 20W (Tc)
G3R20MT12K GeneSiC Semiconductor G3R20MT12K 36.0900
RFQ
 ECAD 3655 0.00000000 GeneSiC Semiconductor G3R™ Tube Active -55°C ~ 175°C (TJ) Through Hole TO-247-4 G3R20 SiCFET (Silicon Carbide) TO-247-4 download RoHS Compliant 1 (Unlimited) 1242-G3R20MT12K EAR99 8541.29.0095 30 N-Channel 1200 V 128A (Tc) 15V 24mOhm @ 60A, 15V 2.69V @ 15mA 219 nC @ 15 V ±15V 5873 pF @ 800 V - 542W (Tc)
G3R350MT12D GeneSiC Semiconductor G3R350MT12D 4.7400
RFQ
 ECAD 3 0.00000000 GeneSiC Semiconductor G3R™ Tube Active -55°C ~ 175°C (TJ) Through Hole TO-247-3 G3R350 SiCFET (Silicon Carbide) TO-247-3 download RoHS Compliant 1 (Unlimited) 1242-G3R350MT12D EAR99 8541.29.0095 30 N-Channel 1200 V 11A (Tc) 15V 420mOhm @ 4A, 15V 2.69V @ 2mA 12 nC @ 15 V ±15V 334 pF @ 800 V - 74W (Tc)
2N7635-GA GeneSiC Semiconductor 2N7635-GA -
RFQ
 ECAD 9225 0.00000000 GeneSiC Semiconductor - Bulk Obsolete -55°C ~ 225°C (TJ) Through Hole TO-257-3 SiC (Silicon Carbide Junction Transistor) TO-257 - RoHS non-compliant 1 (Unlimited) 1242-1146 EAR99 8541.29.0095 10 - 650 V 4A (Tc) (165°C) - 415mOhm @ 4A - - 324 pF @ 35 V - 47W (Tc)
GA10JT12-263 GeneSiC Semiconductor GA10JT12-263 -
RFQ
 ECAD 5630 0.00000000 GeneSiC Semiconductor - Tube Obsolete 175°C (TJ) Surface Mount - GA10JT12 SiC (Silicon Carbide Junction Transistor) - download RoHS Compliant 1 (Unlimited) EAR99 8541.29.0095 50 - 1200 V 25A (Tc) - 120mOhm @ 10A - - 1403 pF @ 800 V - 170W (Tc)
GA20JT12-263 GeneSiC Semiconductor GA20JT12-263 36.7400
RFQ
 ECAD 4850 0.00000000 GeneSiC Semiconductor - Tube Active 175°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA GA20JT12 SiC (Silicon Carbide Junction Transistor) TO-263-7 download RoHS Compliant 1 (Unlimited) EAR99 8541.29.0095 50 - 1200 V 45A (Tc) - 60mOhm @ 20A - - 3091 pF @ 800 V - 282W (Tc)
G2R1000MT33J GeneSiC Semiconductor G2R1000MT33J 18.6900
RFQ
 ECAD 1 0.00000000 GeneSiC Semiconductor G2R™ Tube Active -55°C ~ 175°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA G2R1000 SiCFET (Silicon Carbide) TO-263-7 download RoHS Compliant 1 (Unlimited) 1242-G2R1000MT33J EAR99 8541.29.0095 50 N-Channel 3300 V 4A (Tc) 20V 1.2Ohm @ 2A, 20V 3.5V @ 2mA 21 nC @ 20 V +20V, -5V 238 pF @ 1000 V - 74W (Tc)
G3R75MT12D GeneSiC Semiconductor G3R75MT12D 10.5000
RFQ
 ECAD 3 0.00000000 GeneSiC Semiconductor G3R™ Tube Active -55°C ~ 175°C (TJ) Through Hole TO-247-3 G3R75 SiCFET (Silicon Carbide) TO-247-3 download RoHS Compliant 1 (Unlimited) 1242-G3R75MT12D EAR99 8541.29.0095 30 N-Channel 1200 V 41A (Tc) 15V 90mOhm @ 20A, 15V 2.69V @ 7.5mA 54 nC @ 15 V ±15V 1560 pF @ 800 V - 207W (Tc)
GA10SICP12-263 GeneSiC Semiconductor GA10SICP12-263 29.3250
RFQ
 ECAD 9279 0.00000000 GeneSiC Semiconductor - Tube Active 175°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA GA10SICP12 SiC (Silicon Carbide Junction Transistor) TO-263-7 download RoHS Compliant 1 (Unlimited) EAR99 8541.29.0095 50 - 1200 V 25A (Tc) - 100mOhm @ 10A - - 1403 pF @ 800 V - 170W (Tc)
GA50JT06-258 GeneSiC Semiconductor GA50JT06-258 625.7790
RFQ
 ECAD 9468 0.00000000 GeneSiC Semiconductor - Bulk Active -55°C ~ 225°C (TJ) Through Hole TO-258-3, TO-258AA GA50JT06 SiC (Silicon Carbide Junction Transistor) TO-258 download RoHS Compliant 1 (Unlimited) 1242-1253 EAR99 8541.29.0095 10 - 600 V 100A (Tc) - 25mOhm @ 50A - - - 769W (Tc)
2N7639-GA GeneSiC Semiconductor 2N7639-GA -
RFQ
 ECAD 7360 0.00000000 GeneSiC Semiconductor - Bulk Obsolete -55°C ~ 225°C (TJ) Through Hole TO-257-3 SiC (Silicon Carbide Junction Transistor) TO-257 download RoHS non-compliant 1 (Unlimited) 1242-1150 EAR99 8541.29.0095 10 - 650 V 15A (Tc) (155°C) - 105mOhm @ 15A - - 1534 pF @ 35 V - 172W (Tc)
GA50JT17-247 GeneSiC Semiconductor GA50JT17-247 -
RFQ
 ECAD 5672 0.00000000 GeneSiC Semiconductor - Tube Obsolete 175°C (TJ) Through Hole TO-247-3 SiC (Silicon Carbide Junction Transistor) TO-247 download 1 (Unlimited) 1242-1247 EAR99 8541.29.0095 30 - 1700 V 100A (Tc) - 25mOhm @ 50A - - - 583W (Tc)
G3R160MT17J GeneSiC Semiconductor G3R160MT17J 12.9800
RFQ
 ECAD 1161 0.00000000 GeneSiC Semiconductor G3R™ Tube Active -55°C ~ 175°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA G3R160 SiCFET (Silicon Carbide) TO-263-7 download RoHS Compliant 1 (Unlimited) 1242-G3R160MT17J EAR99 8541.29.0095 50 N-Channel 1700 V 22A (Tc) 15V 208mOhm @ 12A, 15V 2.7V @ 5mA 51 nC @ 15 V ±15V 1272 pF @ 1000 V - 187W (Tc)
GA35XCP12-247 GeneSiC Semiconductor GA35XCP12-247 -
RFQ
 ECAD 7101 0.00000000 GeneSiC Semiconductor - Tube Obsolete -40°C ~ 150°C (TJ) Through Hole TO-247-3 Standard TO-247AB download 1 (Unlimited) 1242-1141 EAR99 8541.29.0095 30 800V, 35A, 22Ohm, 15V 36 ns PT 1200 V 35 A 3V @ 15V, 35A 2.66mJ (on), 4.35mJ (off) 50 nC -
G3R20MT17K GeneSiC Semiconductor G3R20MT17K 107.2000
RFQ
 ECAD 4 0.00000000 GeneSiC Semiconductor G3R™ Tube Active -55°C ~ 175°C (TJ) Through Hole TO-247-4 G3R20 SiCFET (Silicon Carbide) TO-247-4 - RoHS Compliant 1 (Unlimited) 1242-G3R20MT17K EAR99 8541.29.0095 30 N-Channel 1700 V 124A (Tc) 15V 26mOhm @ 75A, 15V 2.7V @ 15mA 400 nC @ 15 V ±15V 10187 pF @ 1000 V - 809W (Tc)
G3R450MT17J GeneSiC Semiconductor G3R450MT17J 8.0400
RFQ
 ECAD 7 0.00000000 GeneSiC Semiconductor G3R™ Tube Active -55°C ~ 175°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA G3R450 SiCFET (Silicon Carbide) TO-263-7 download RoHS Compliant 1 (Unlimited) 1242-G3R450MT17J EAR99 8541.29.0095 50 N-Channel 1700 V 9A (Tc) 15V 585mOhm @ 4A, 15V 2.7V @ 2mA 18 nC @ 15 V ±15V 454 pF @ 1000 V - 91W (Tc)
GA20SICP12-247 GeneSiC Semiconductor GA20SICP12-247 -
RFQ
 ECAD 4247 0.00000000 GeneSiC Semiconductor - Tube Obsolete -55°C ~ 175°C (TJ) Through Hole TO-247-3 SiC (Silicon Carbide Junction Transistor) TO-247AB download 1 (Unlimited) EAR99 8541.29.0095 50 - 1200 V 45A (Tc) - 50mOhm @ 20A - - 3091 pF @ 800 V - 282W (Tc)
GA06JT12-247 GeneSiC Semiconductor GA06JT12-247 -
RFQ
 ECAD 6492 0.00000000 GeneSiC Semiconductor - Tube Obsolete 175°C (TJ) Through Hole TO-247-3 SiC (Silicon Carbide Junction Transistor) TO-247AB download 1 (Unlimited) EAR99 8541.29.0095 30 - 1200 V 6A (Tc) (90°C) - 220mOhm @ 6A - - - -
GA05JT12-263 GeneSiC Semiconductor GA05JT12-263 -
RFQ
 ECAD 4245 0.00000000 GeneSiC Semiconductor - Tube Obsolete 175°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA GA05JT12 SiC (Silicon Carbide Junction Transistor) TO-263-7 download RoHS Compliant 1 (Unlimited) EAR99 8541.29.0095 50 - 1200 V 15A (Tc) - - - - - 106W (Tc)
G2R50MT33K GeneSiC Semiconductor G2R50MT33K 295.6700
RFQ
 ECAD 78 0.00000000 GeneSiC Semiconductor G2R™ Tube Active -55°C ~ 175°C (TJ) Through Hole TO-247-4 SiCFET (Silicon Carbide) TO-247-4 download RoHS Compliant 1 (Unlimited) 1242-G2R50MT33K EAR99 8541.29.0095 30 N-Channel 3300 V 63A (Tc) 20V 50mOhm @ 40A, 20V 3.5V @ 10mA (Typ) 340 nC @ 20 V +25V, -10V 7301 pF @ 1000 V Standard 536W (Tc)
G3R60MT07J GeneSiC Semiconductor G3R60MT07J 10.7000
RFQ
 ECAD 1 0.00000000 GeneSiC Semiconductor G3R™ Tube Active - Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA SiCFET (Silicon Carbide) TO-263-7 download ROHS3 Compliant 1 (Unlimited) REACH Unaffected 1242-G3R60MT07J EAR99 8541.29.0095 50 - 750 V - - - - +20V, -10V - -
G2R120MT33J GeneSiC Semiconductor G2R120MT33J 108.0300
RFQ
 ECAD 1567 0.00000000 GeneSiC Semiconductor G2R™ Tube Active -55°C ~ 175°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA G2R120 SiCFET (Silicon Carbide) TO-263-7 download RoHS Compliant 1 (Unlimited) 1242-G2R120MT33J EAR99 8541.29.0095 50 N-Channel 3300 V 35A 20V 156mOhm @ 20A, 20V - 145 nC @ 20 V +25V, -10V 3706 pF @ 1000 V - -
GA05JT12-247 GeneSiC Semiconductor GA05JT12-247 -
RFQ
 ECAD 1135 0.00000000 GeneSiC Semiconductor - Tube Obsolete 175°C (TJ) Through Hole TO-247-3 SiC (Silicon Carbide Junction Transistor) TO-247AB - 1 (Unlimited) EAR99 8541.29.0095 30 - 1200 V 5A (Tc) - 280mOhm @ 5A - - - 106W (Tc)
G3R60MT07D GeneSiC Semiconductor G3R60MT07D 10.1400
RFQ
 ECAD 1 0.00000000 GeneSiC Semiconductor G3R™ Tube Active - Through Hole TO-247-3 SiCFET (Silicon Carbide) TO-247-3 download ROHS3 Compliant 1 (Unlimited) REACH Unaffected 1242-G3R60MT07D EAR99 8541.29.0095 30 - 750 V - - - - +20V, -10V - -
G3R20MT12N GeneSiC Semiconductor G3R20MT12N 56.2000
RFQ
 ECAD 9403 0.00000000 GeneSiC Semiconductor G3R™ Tube Active -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC G3R20 SiCFET (Silicon Carbide) SOT-227 download RoHS Compliant 1 (Unlimited) 1242-G3R20MT12N EAR99 8541.29.0095 10 N-Channel 1200 V 105A (Tc) 15V 24mOhm @ 60A, 15V 2.69V @ 15mA 219 nC @ 15 V +20V, -10V 5873 pF @ 800 V - 365W (Tc)
G3R450MT17D GeneSiC Semiconductor G3R450MT17D 7.2100
RFQ
 ECAD 3 0.00000000 GeneSiC Semiconductor G3R™ Tube Active -55°C ~ 175°C (TJ) Through Hole TO-247-3 G3R450 SiCFET (Silicon Carbide) TO-247-3 download RoHS Compliant 1 (Unlimited) 1242-G3R450MT17D EAR99 8541.29.0095 30 N-Channel 1700 V 9A (Tc) 15V 585mOhm @ 4A, 15V 2.7V @ 2mA 18 nC @ 15 V ±15V 454 pF @ 1000 V - 88W (Tc)
GA03JT12-247 GeneSiC Semiconductor GA03JT12-247 -
RFQ
 ECAD 8291 0.00000000 GeneSiC Semiconductor - Tube Obsolete 175°C (TJ) Through Hole TO-247-3 SiC (Silicon Carbide Junction Transistor) TO-247AB download 1 (Unlimited) EAR99 8541.29.0095 30 - 1200 V 3A (Tc) (95°C) - 460mOhm @ 3A - - - 15W (Tc)
G3R160MT17D GeneSiC Semiconductor G3R160MT17D 12.2400
RFQ
 ECAD 9458 0.00000000 GeneSiC Semiconductor G3R™ Tube Active -55°C ~ 175°C (TJ) Through Hole TO-247-3 G3R160 SiCFET (Silicon Carbide) TO-247-3 download RoHS Compliant 1 (Unlimited) 1242-G3R160MT17D EAR99 8541.29.0095 30 N-Channel 1700 V 21A (Tc) 15V 208mOhm @ 12A, 15V 2.7V @ 5mA 51 nC @ 15 V ±15V 1272 pF @ 1000 V - 175W (Tc)
G2R1000MT17J GeneSiC Semiconductor G2R1000MT17J 6.4400
RFQ
 ECAD 14 0.00000000 GeneSiC Semiconductor G2R™ Tube Active -55°C ~ 175°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA G2R1000 SiCFET (Silicon Carbide) TO-263-7 download RoHS Compliant 1 (Unlimited) 1242-G2R1000MT17J EAR99 8541.29.0095 50 N-Channel 1700 V 3A (Tc) 20V 1.2Ohm @ 2A, 20V 4V @ 2mA +20V, -10V 139 pF @ 1000 V - 54W (Tc)
  • Daily average RFQ Volume

    2000+

    Daily average RFQ Volume

  • Standard Product Unit

    30,000,000

    Standard Product Unit

  • Worldwide Manufacturers

    2800+

    Worldwide Manufacturers

  • In-stock Warehouse

    15,000 m2

    In-stock Warehouse

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AD9208BBPZ-3000

196-LFBGA Exposed Pad

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