Tel: +86-0755-83501315
Email: sales@sic-components.com
Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) |
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SSM6J808R,LF | 0.6400 | ![]() |
5 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6J808 | MOSFET (Metal Oxide) | 6-TSOP-F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 40 V | 7A (Ta) | 4V, 10V | 35mOhm @ 2.5A, 10V | 2V @ 100µA | 24.2 nC @ 10 V | +10V, -20V | 1020 pF @ 10 V | - | 1.5W (Ta) | |||||||||||||||||||
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XPH2R106NC,L1XHQ | 2.1700 | ![]() |
9 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-SOIC (0.197", 5.00mm Width) | XPH2R106 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 110A (Ta) | 2.1mOhm @ 55A, 10V | 2.5V @ 1mA | 104 nC @ 10 V | ±20V | 6900 pF @ 10 V | - | 960mW (Ta), 170W (Tc) | ||||||||||||||||||||
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XPN7R104NC,L1XHQ | 1.2500 | ![]() |
9396 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | XPN7R104 | MOSFET (Metal Oxide) | 8-TSON Advance-WF (3.1x3.1) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 40 V | 20A (Ta) | 4.5V, 10V | 7.1mOhm @ 10A, 10V | 2.5V @ 200µA | 21 nC @ 10 V | ±20V | 1290 pF @ 10 V | - | 840mW (Ta), 65W (Tc) | ||||||||||||||||||||
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2SC5200-O(S1,F | 3.0100 | ![]() |
21 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C (TJ) | Through Hole | TO-3PL | 150 W | TO-3P(L) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | 230 V | 15 A | 5µA (ICBO) | NPN | 3V @ 800mA, 8A | 55 @ 1A, 5V | 30MHz | ||||||||||||||||||||||||
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TK9A45D(STA4,Q,M) | 1.7100 | ![]() |
8473 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK9A45 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 450 V | 9A (Ta) | 10V | 770mOhm @ 4.5A, 10V | 4V @ 1mA | 16 nC @ 10 V | ±30V | 800 pF @ 25 V | - | 40W (Tc) | |||||||||||||||||||
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TK1R4F04PB,LXGQ | 2.7300 | ![]() |
885 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TK1R4F04 | MOSFET (Metal Oxide) | TO-220SM(W) | download | 3 (168 Hours) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 40 V | 160A (Ta) | 6V, 10V | 1.9mOhm @ 80A, 6V | 3V @ 500µA | 103 nC @ 10 V | ±20V | 5500 pF @ 10 V | - | 205W (Tc) | ||||||||||||||||||||
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TK60P03M1,RQ(S | - | ![]() |
6408 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK60P03 | MOSFET (Metal Oxide) | DPAK | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 30 V | 60A (Ta) | 4.5V, 10V | 6.4mOhm @ 30A, 10V | 2.3V @ 500µA | 40 nC @ 10 V | ±20V | 2700 pF @ 10 V | - | 63W (Tc) | |||||||||||||||||||
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TK560A65Y,S4X | 1.5700 | ![]() |
12 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK560A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 7A (Tc) | 10V | 560mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5 nC @ 10 V | ±30V | 380 pF @ 300 V | - | 30W | |||||||||||||||||||
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SSM6N62TU,LXHF | 0.4600 | ![]() |
1 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6N62 | MOSFET (Metal Oxide) | 500mW (Ta) | UF6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 20V | 800mA (Ta) | 85mOhm @ 800mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 177pF @ 10V | Logic Level Gate, 1.2V Drive | ||||||||||||||||||||||
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2SK2847(F) | - | ![]() |
1737 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | 2SK2847 | MOSFET (Metal Oxide) | TO-3P(N)IS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 900 V | 8A (Ta) | 10V | 1.4Ohm @ 4A, 10V | 4V @ 1mA | 58 nC @ 10 V | ±30V | 2040 pF @ 25 V | - | 85W (Tc) | ||||||||||||||||||||
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TW107N65C,S1F | 9.6200 | ![]() |
96 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 20A (Tc) | 18V | 145mOhm @ 10A, 18V | 5V @ 1.2mA | 21 nC @ 18 V | +25V, -10V | 600 pF @ 400 V | - | 76W (Tc) | ||||||||||||||||||||
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TK110A65Z,S4X | 4.2300 | ![]() |
51 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK110A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 24A (Ta) | 10V | 110mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 45W (Tc) | |||||||||||||||||||
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2SD2695(T6CANO,F,M | - | ![]() |
9371 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SD2695 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 60 V | 2 A | 10µA (ICBO) | NPN | 1.5V @ 1mA, 1A | 2000 @ 1A, 2V | 100MHz | ||||||||||||||||||||||||
2SC6042,T2WNLQ(J | - | ![]() |
6294 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | SC-71 | 2SC6042 | 1 W | MSTM | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1 | 375 V | 1 A | 100µA (ICBO) | NPN | 1V @ 100mA, 800mA | 100 @ 100mA, 5V | - | |||||||||||||||||||||||||
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SSM6J213FE(TE85L,F | 0.4700 | ![]() |
8736 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6J213 | MOSFET (Metal Oxide) | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | P-Channel | 20 V | 2.6A (Ta) | 1.5V, 4.5V | 103mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7 nC @ 4.5 V | ±8V | 290 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||||
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SSM6J206FE(TE85L,F | - | ![]() |
3596 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6J206 | MOSFET (Metal Oxide) | ES6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | P-Channel | 20 V | 2A (Ta) | 1.8V, 4V | 130mOhm @ 1A, 4V | 1V @ 1mA | ±8V | 335 pF @ 10 V | - | 500mW (Ta) | ||||||||||||||||||||
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2SC5886A,L1XHQ(O | - | ![]() |
7632 | 0.00000000 | Toshiba Semiconductor and Storage | * | Tape & Reel (TR) | Active | 2SC5886 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | |||||||||||||||||||||||||||||||||||
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TK5P65W,RQ | 1.3700 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 650 V | 5.2A (Ta) | 10V | 1.22Ohm @ 2.6A, 10V | 3.5V @ 170µA | 10.5 nC @ 10 V | ±30V | 380 pF @ 300 V | - | 60W (Tc) | ||||||||||||||||||||
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TK25E06K3,S1X(S | - | ![]() |
4655 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 | TK25E06 | MOSFET (Metal Oxide) | TO-220-3 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 25A (Ta) | 18mOhm @ 12.5A, 10V | - | 29 nC @ 10 V | - | 60W (Tc) | ||||||||||||||||||||||
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2SA1931,NSEIKIQ(J | - | ![]() |
5094 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SA1931 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 50 V | 5 A | 1µA (ICBO) | PNP | 400mV @ 200mA, 2A | 100 @ 1A, 1V | 60MHz | ||||||||||||||||||||||||
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TK62N60X,S1F | 11.2600 | ![]() |
108 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV-H | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | TK62N60 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 600 V | 61.8A (Ta) | 10V | 40mOhm @ 21A, 10V | 3.5V @ 3.1mA | 135 nC @ 10 V | ±30V | 6500 pF @ 300 V | - | 400W (Tc) | |||||||||||||||||||
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RN2413,LXHF | 0.0645 | ![]() |
6865 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2413 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200 MHz | 47 kOhms | ||||||||||||||||||||||||
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SSM6P40TU,LF | 0.4800 | ![]() |
3853 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6P40 | MOSFET (Metal Oxide) | 500mW (Ta) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 P-Channel (Dual) | 30V | 1.4A (Ta) | 226mOhm @ 1A, 10V | 2V @ 1mA | 2.9nC @ 10V | 120pF @ 15V | Logic Level Gate, 4V Drive | |||||||||||||||||||||
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2SC5201,T6MURAF(J | - | ![]() |
3172 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC5201 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 600 V | 50 mA | 1µA (ICBO) | NPN | 1V @ 500mA, 20mA | 100 @ 20mA, 5V | - | ||||||||||||||||||||||||
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GT50JR21(STA1,E,S) | 4.7900 | ![]() |
6501 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | Standard | 230 W | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | 264-GT50JR21(STA1ES) | EAR99 | 8541.29.0095 | 25 | - | - | 600 V | 50 A | 100 A | 2V @ 15V, 50A | - | - | |||||||||||||||||||||
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SSM3K309T(TE85L,F) | - | ![]() |
1396 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSM3K309 | MOSFET (Metal Oxide) | TSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 4.7A (Ta) | 1.8V, 4V | 31mOhm @ 4A, 4V | - | ±12V | 1020 pF @ 10 V | - | 700mW (Ta) | |||||||||||||||||||||
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TK3R2A10PL,S4X | 2.9400 | ![]() |
99 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-220-3 Full Pack | TK3R2A10 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 100A (Tc) | 4.5V, 10V | 3.2mOhm @ 50A, 10V | 2.5V @ 1mA | 161 nC @ 10 V | ±20V | 9500 pF @ 50 V | - | 54W (Tc) | |||||||||||||||||||
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2SK3700(F) | 2.5200 | ![]() |
100 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | 2SK3700 | MOSFET (Metal Oxide) | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 900 V | 5A (Ta) | 2.5Ohm @ 3A, 10V | 4V @ 1mA | 28 nC @ 10 V | 1150 pF @ 25 V | - | 150W (Tc) | |||||||||||||||||||||
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TW083Z65C,S1F | 11.4500 | ![]() |
120 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-4 | SiC (Silicon Carbide Junction Transistor) | TO-247-4L(X) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 30A (Tc) | 18V | 118mOhm @ 15A, 18V | 5V @ 600µA | 28 nC @ 18 V | +25V, -10V | 873 pF @ 400 V | - | 111W (Tc) | ||||||||||||||||||||
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TPH6R004PL,LQ | 0.7900 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPH6R004 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 40 V | 87A (Ta), 49A (Tc) | 4.5V, 10V | 6mOhm @ 24.5A, 10V | 2.4V @ 200µA | 30 nC @ 10 V | ±20V | 2700 pF @ 20 V | - | 1.8W (Ta), 81W (Tc) |
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