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Transistors(102018)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Input | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Test Condition | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | NTC Thermistor | Input Capacitance (Cies) @ Vce | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
2SC5439(F) | - |  |
9123 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SC5439 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | 450 V | 8 A | 100µA (ICBO) | NPN | 1V @ 640mA, 3.2A | 14 @ 1A, 5V | - | ||||||||||||||||||||||||||||||||
 |
IRFU024ATU | - | |
1398 | 0.00000000 | Fairchild Semiconductor | * | Bulk | Active | IRFU024 | - | - | Not applicable | 1 (Unlimited) | Vendor Undefined | 1 | - | ||||||||||||||||||||||||||||||||||||||||||
 |
S8550-D-BP | - | |
3501 | 0.00000000 | Micro Commercial Co | - | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | S8050 | 625 mW | TO-92 | download | RoHS Compliant | 1 (Unlimited) | 353-S8550-D-BP | EAR99 | 8541.21.0075 | 1,000 | 25 V | 500 mA | 200nA | PNP | 600mV @ 50mA, 500mA | 160 @ 50mA, 1V | 150MHz | ||||||||||||||||||||||||||||||
 |
MCH3383-TL-H | 0.1800 | |
47 | 0.00000000 | Sanyo | - | Bulk | Active | 150°C (TJ) | Surface Mount | 3-SMD, Flat Lead | MOSFET (Metal Oxide) | SC-70FL/MCPH3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | EAR99 | 0000.00.0000 | 1 | P-Channel | 12 V | 3.5A (Ta) | 69mOhm @ 1.5A, 2.5V | 800mV @ 1mA | 6.2 nC @ 2.5 V | ±5V | 1010 pF @ 6 V | - | 1W (Ta) | ||||||||||||||||||||||||||||
 |
NSV60200DMTWTBG | - | |
8310 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | NSV60200 | 6-WDFN (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0075 | 3,000 | 100nA (ICBO) | 2 PNP (Dual) | 450mV @ 200mA, 2A | 150 @ 100mA, 2V | 155MHz | |||||||||||||||||||||||||||||||||
 |
BC549BBK | 0.0241 | |
5126 | 0.00000000 | Diotec Semiconductor | - | Box | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | 500 mW | TO-92 | download | ROHS3 Compliant | Not Applicable | 2796-BC549BBK | 8541.21.0000 | 5,000 | 30 V | 100 mA | 15nA | NPN | 600mV @ 5mA, 100mA | 200 @ 2mA, 5V | 300MHz | ||||||||||||||||||||||||||||||||
|
2C5238 | 11.8769 | |
8421 | 0.00000000 | Microchip Technology | - | Tape & Reel (TR) | Active | - | ROHS3 Compliant | REACH Unaffected | 150-2C5238 | 1 | |||||||||||||||||||||||||||||||||||||||||||||
 |
2SC3576 | 0.0800 | |
35 | 0.00000000 | onsemi | * | Bulk | Active | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0075 | 1 | |||||||||||||||||||||||||||||||||||||||||||
|
2SC5201,T6MURAF(J | - | |
3172 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC5201 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 600 V | 50 mA | 1µA (ICBO) | NPN | 1V @ 500mA, 20mA | 100 @ 20mA, 5V | - | ||||||||||||||||||||||||||||||||
 |
NTTFS020N06CTAG | 1.3700 | |
3251 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | NTTFS020 | MOSFET (Metal Oxide) | 8-WDFN (3.3x3.3) | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 60 V | 7A (Ta), 27A (Tc) | 10V | 20.3mOhm @ 4A, 10V | 4V @ 20µA | 5.8 nC @ 10 V | ±20V | 355 pF @ 30 V | - | 2.5W (Ta), 31W (Tc) | ||||||||||||||||||||||||||
|
VS-GB200NH120N | - | |
3076 | 0.00000000 | Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | GB200 | 1562 W | Standard | Double INT-A-PAK | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGB200NH120N | EAR99 | 8541.29.0095 | 12 | Single | - | 1200 V | 420 A | 1.8V @ 15V, 200A (Typ) | 5 mA | No | 18 nF @ 25 V | |||||||||||||||||||||||||||
 |
2N7002KDW_R1_00001 | 0.2500 | |
8 | 0.00000000 | Panjit International Inc. | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 2N7002 | MOSFET (Metal Oxide) | 200mW (Ta) | SOT-363 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 60V | 115mA (Ta) | 3Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.8nC @ 4.5V | 35pF @ 25V | - | ||||||||||||||||||||||||||||
 |
GT50JR21(STA1,E,S) | 4.7900 | |
6501 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | Standard | 230 W | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | 264-GT50JR21(STA1ES) | EAR99 | 8541.29.0095 | 25 | - | - | 600 V | 50 A | 100 A | 2V @ 15V, 50A | - | - | |||||||||||||||||||||||||||||
 |
2SK4085LS-CBC11 | 1.2800 | |
239 | 0.00000000 | onsemi | * | Bulk | Active | 2SK4085 | - | download | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.29.0095 | 1 | - | ||||||||||||||||||||||||||||||||||||||||
|
APTM10DUM05TG | - | |
1714 | 0.00000000 | Microsemi Corporation | - | Bulk | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | APTM10 | MOSFET (Metal Oxide) | 780W | SP4 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | 2 N-Channel (Dual) | 100V | 278A | 5mOhm @ 125A, 10V | 4V @ 5mA | 700nC @ 10V | 20000pF @ 25V | - | |||||||||||||||||||||||||||||
 |
APTGF350DA60G | - | |
8006 | 0.00000000 | Microsemi Corporation | - | Bulk | Obsolete | - | Chassis Mount | SP6 | 1562 W | Standard | SP6 | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1 | Single | NPT | 600 V | 430 A | 2.5V @ 15V, 360A | 200 µA | No | 17.2 nF @ 25 V | |||||||||||||||||||||||||||||||
 |
2SD2696T2L | 0.4300 | |
3 | 0.00000000 | Rohm Semiconductor | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-723 | 2SD2696 | 150 mW | VMT3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0075 | 8,000 | 30 V | 400 mA | 100nA (ICBO) | NPN | 300mV @ 2mA, 100mA | 270 @ 100mA, 2V | 400MHz | ||||||||||||||||||||||||||||||
 |
SIHA15N80AEF-GE3 | 2.8100 | |
1 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220 Full Pack | download | 1 (Unlimited) | 742-SIHA15N80AEF-GE3 | EAR99 | 8541.29.0095 | 50 | N-Channel | 800 V | 6A (Tc) | 10V | 350mOhm @ 6.5A, 10V | 4V @ 250µA | 54 nC @ 10 V | ±30V | 1128 pF @ 100 V | - | 33W (Tc) | ||||||||||||||||||||||||||||
 |
RRS040P03FRATB | 0.3489 | |
2760 | 0.00000000 | Rohm Semiconductor | - | Tape & Reel (TR) | Not For New Designs | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | RRS040 | MOSFET (Metal Oxide) | 8-SOP | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 30 V | 4A (Ta) | 4V, 10V | 75mOhm @ 4A, 10V | 2.5V @ 1mA | 5.2 nC @ 5 V | ±20V | 480 pF @ 10 V | - | 2W (Ta) | |||||||||||||||||||||||||||
 |
SI1965DH-T1-E3 | 0.5100 | |
4167 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SI1965 | MOSFET (Metal Oxide) | 1.25W | SC-70-6 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | 2 P-Channel (Dual) | 12V | 1.3A | 390mOhm @ 1A, 4.5V | 1V @ 250µA | 4.2nC @ 8V | 120pF @ 6V | Logic Level Gate | ||||||||||||||||||||||||||||
 |
BCR 148 B6327 | - | |
7125 | 0.00000000 | Infineon Technologies | - | Tape & Reel (TR) | Discontinued at SIC | Surface Mount | TO-236-3, SC-59, SOT-23-3 | BCR 148 | 200 mW | PG-SOT23 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0075 | 30,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 500µA, 10mA | 70 @ 5mA, 5V | 100 MHz | 47 kOhms | 47 kOhms | |||||||||||||||||||||||||||||
 |
IPD65R1K0CEAUMA1 | 0.3783 | |
5975 | 0.00000000 | Infineon Technologies | CoolMOS™ | Tape & Reel (TR) | Not For New Designs | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IPD65R1 | MOSFET (Metal Oxide) | PG-TO252-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 650 V | 7.2A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 200µA | 15.3 nC @ 10 V | ±20V | 328 pF @ 100 V | - | 68W (Tc) | ||||||||||||||||||||||||||
 |
STGWA40IH65DF | 4.9500 | |
2170 | 0.00000000 | STMicroelectronics | IH | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | STGWA40 | Standard | 238 W | TO-247 Long Leads | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 497-18497 | EAR99 | 8541.29.0095 | 30 | 400V, 40A, 22Ohm, 15V | Trench Field Stop | 650 V | 80 A | 120 A | 2V @ 15V, 40A | 190µJ (off) | 114 nC | -/210ns | ||||||||||||||||||||||||||
 |
IRF6898MTRPBF | 1.0000 | |
2752 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | MOSFET (Metal Oxide) | DirectFET™ Isometric MX | download | Not applicable | 1 (Unlimited) | REACH Unaffected | EAR99 | 0000.00.0000 | 1,009 | N-Channel | 25 V | 40A (Ta), 214A (Tc) | 1.1mOhm @ 40A, 10V | 2.1V @ 100µA | 68 nC @ 4.5 V | ±16V | 5630 pF @ 13 V | Schottky Diode (Body) | 2.8W (Ta), 78W (Tc) | ||||||||||||||||||||||||||||
 |
BSP296L6327HTSA1 | - | |
9580 | 0.00000000 | Infineon Technologies | SIPMOS® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 100 V | 1.1A (Ta) | 4.5V, 10V | 700mOhm @ 1.1A, 10V | 1.8V @ 400µA | 17.2 nC @ 10 V | ±20V | 364 pF @ 25 V | - | 1.79W (Ta) | ||||||||||||||||||||||||||||
 |
RM25N30DN | 0.1400 | |
8606 | 0.00000000 | Rectron USA | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | 8-DFN-EP (3x3) | download | ROHS3 Compliant | 1 (Unlimited) | 2516-RM25N30DNTR | 8541.10.0080 | 25,000 | N-Channel | 30 V | 25A (Tc) | 4.5V, 10V | 10mOhm @ 10A, 10V | 3V @ 250µA | ±20V | 1530 pF @ 15 V | - | 25W (Tc) | |||||||||||||||||||||||||||||
 |
SD1275 | - | |
3567 | 0.00000000 | STMicroelectronics | - | Box | Obsolete | 200°C (TJ) | Chassis, Stud Mount | M135 | SD1275 | 70W | M135 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 40 | 9dB | 16V | 8A | NPN | 20 @ 250mA, 5V | - | - | ||||||||||||||||||||||||||||||
 |
RJK0351DPA-03#J0B | 0.8500 | |
7 | 0.00000000 | Renesas Electronics America Inc | * | Bulk | Active | - | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.29.0095 | 2,500 |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
Wishlist (0 Items)