- RFQ
- BOM
-
Contact Us
Tel: +86-0755-83501315
Email: sales@sic-components.com
- Chinese
- English
- French
- German
- Portuguese
- Spanish
- Russian
- Japanese
- Korean
- Arabic
- Irish
- Greek
- Turkish
- Italian
- Danish
- Romanian
- Indonesian
- Czech
- Afrikaans
- Swedish
- Polish
- Basque
- Catalan
- Esperanto
- Hindi
- Lao
- Albanian
- Amharic
- Armenian
- Azerbaijani
- Belarusian
- Bengali
- Bosnian
- Bulgarian
- Cebuano
- Chichewa
- Corsican
- Croatian
- Dutch
- Estonian
- Filipino
- Finnish
- Frisian
- Galician
- Georgian
- Gujarati
- Haitian
- Hausa
- Hawaiian
- Hebrew
- Hmong
- Hungarian
- Icelandic
- Igbo
- Javanese
- Kannada
- Kazakh
- Khmer
- Kurdish
- Kyrgyz
- Latin
- Latvian
- Lithuanian
- Luxembou..
- Macedonian
- Malagasy
- Malay
- Malayalam
- Maltese
- Maori
- Marathi
- Mongolian
- Burmese
- Nepali
- Norwegian
- Pashto
- Persian
- Punjabi
- Serbian
- Sesotho
- Sinhala
- Slovak
- Slovenian
- Somali
- Samoan
- Scots Gaelic
- Shona
- Sindhi
- Sundanese
- Swahili
- Tajik
- Tamil
- Telugu
- Thai
- Ukrainian
- Urdu
- Uzbek
- Vietnamese
- Welsh
- Xhosa
- Yiddish
- Yoruba
- Zulu
- Kinyarwanda
- Tatar
- Oriya
- Turkmen
- Uyghur
Transistors(100539)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Frequency | Technology | Power - Max | Input | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Test Condition | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Reverse Recovery Time (trr) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Voltage - Test | Current - Collector Cutoff (Max) | NTC Thermistor | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PZTA14,135 | 0.0900 |  |
9722 | 0.00000000 | NXP USA Inc. | Automotive, AEC-Q101 | Bulk | Active | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | 1.25 W | SOT-223 | download | EAR99 | 8541.29.0075 | 200 | 30 V | 500 mA | 100nA | NPN - Darlington | 1.5V @ 100µA, 100mA | 20000 @ 100mA, 5V | 125MHz | ||||||||||||||||||||||||||||||||||||||
 |
IGTH20N50A | 2.6100 | |
5178 | 0.00000000 | Harris Corporation | - | Bulk | Active | - | Through Hole | TO-218-3 Isolated Tab, TO-218AC | Standard | TO-218 Isolated | download | EAR99 | 8542.39.0001 | 38 | - | - | 500 V | 20 A | - | - | - | ||||||||||||||||||||||||||||||||||||||
 |
PBLS2022D,115 | - | |
3235 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | PBLS20 | download | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | |||||||||||||||||||||||||||||||||||||||||||||||
 |
BLF6G27LS-40P,112 | 75.6200 | |
40 | 0.00000000 | NXP USA Inc. | - | Bulk | Active | 65 V | Surface Mount | SOT-1121B | 2.5GHz ~ 2.7GHz | LDMOS | LDMOST | download | EAR99 | 8541.29.0075 | 4 | Dual, Common Source | - | 450 mA | 12W | 17.5dB | - | 28 V | |||||||||||||||||||||||||||||||||||||
 |
FQPF6N80T | 1.1600 | |
5 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 800 V | 3.3A (Tc) | 10V | 1.95Ohm @ 1.65A, 10V | 5V @ 250µA | 31 nC @ 10 V | ±30V | 1500 pF @ 25 V | - | 51W (Tc) | ||||||||||||||||||||||||||||||||||
 |
IRFR7440TRPBF | - | |
2155 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | 176-LQFP | MOSFET (Metal Oxide) | 176-LQFP (24x24) | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 40 V | 90A (Tc) | 6V, 10V | 2.4mOhm @ 90A, 10V | 3.9V @ 100µA | 134 nC @ 10 V | ±20V | 4610 pF @ 25 V | - | 140W (Tc) | ||||||||||||||||||||||||||||||||||
 |
FGA40T65SHDF | 1.0000 | |
8593 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | Standard | 268 W | TO-3PN | download | EAR99 | 8542.39.0001 | 1 | 400V, 40A, 6Ohm, 15V | 101 ns | Trench Field Stop | 650 V | 80 A | 120 A | 1.81V @ 15V, 40A | 1.22mJ (on), 440µJ (off) | 68 nC | 18ns/64ns | ||||||||||||||||||||||||||||||||||
 |
IPW60R199CP | - | |
3900 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | PG-TO247-3-21 | download | 0000.00.0000 | 1 | N-Channel | 600 V | 16A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 43 nC @ 10 V | ±20V | 1520 pF @ 100 V | - | 139W (Tc) | |||||||||||||||||||||||||||||||||||
|
SPS9594-1RLRP | 1.0000 | |
6130 | 0.00000000 | onsemi | * | Bulk | Active | - | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FCH25N60N | 3.7500 | |
7 | 0.00000000 | Fairchild Semiconductor | SupreMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 | download | EAR99 | 8542.39.0001 | 80 | N-Channel | 600 V | 25A (Tc) | 10V | 126mOhm @ 12.5A, 10V | 4V @ 250µA | 74 nC @ 10 V | ±30V | 3352 pF @ 100 V | - | 216W (Tc) | ||||||||||||||||||||||||||||||||||
|
IGZ100N65H5 | - | |
4322 | 0.00000000 | Infineon Technologies | TRENCHSTOP™ | Bulk | Active | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4 | Standard | 536 W | PG-TO247-4-1 | download | EAR99 | 8542.39.0001 | 1 | 400V, 50A, 8Ohm, 15V | Trench Field Stop | 650 V | 161 A | 400 A | 2.1V @ 15V, 100A | 850µJ (on), 770µJ (off) | 210 nC | 30ns/421ns | |||||||||||||||||||||||||||||||||||
|
FQP20N06L | - | |
2169 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220-3 | - | 0000.00.0000 | 1 | N-Channel | 60 V | 21A (Tc) | 5V, 10V | 55mOhm @ 10.5A, 10V | 2.5V @ 250µA | 13 nC @ 5 V | ±20V | 630 pF @ 25 V | - | 53W (Tc) | |||||||||||||||||||||||||||||||||||
 |
PMCM6501VPEZ | 0.2000 | |
7 | 0.00000000 | NXP Semiconductors | - | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-XFBGA, WLCSP | MOSFET (Metal Oxide) | 6-WLCSP (1.48x0.98) | download | EAR99 | 8541.29.0095 | 1,528 | P-Channel | 12 V | 6.2A (Ta) | 1.8V, 4.5V | 25mOhm @ 3A, 4.5V | 900mV @ 250µA | 29.4 nC @ 4.5 V | ±8V | 1400 pF @ 6 V | - | 556mW (Ta), 12.5W (Tc) | ||||||||||||||||||||||||||||||||||
 |
IGTM20N40 | - | |
9799 | 0.00000000 | Harris Corporation | - | Bulk | Active | - | Through Hole | TO-204AA, TO-3 | Standard | TO-3 | download | EAR99 | 8542.39.0001 | 25 | - | - | 400 V | 20 A | - | - | - | ||||||||||||||||||||||||||||||||||||||
 |
STW68N65DM6-4AG | 12.3100 | |
9273 | 0.00000000 | STMicroelectronics | Automotive, AEC-Q101, MDmesh™ | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | STW68 | MOSFET (Metal Oxide) | TO-247-4 | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 497-STW68N65DM6-4AG | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 72A (Tc) | 39mOhm @ 36A, 10V | 4.75V @ 250µA | 118 nC @ 10 V | ±25V | 5900 pF @ 100 V | - | 480W (Tc) | ||||||||||||||||||||||||||||||
 |
NTMFS034N15MC | 2.0100 | |
1 | 0.00000000 | onsemi | PowerTrench® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | NTMFS034 | MOSFET (Metal Oxide) | 8-PQFN (5x6) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 150 V | 6.1A (Ta), 31A (Tc) | 31mOhm @ 13A, 10V | 4.5V @ 70µA | 12 nC @ 10 V | ±20V | 905 pF @ 75 V | - | 2.5W (Ta), 62.5W (Tc) | |||||||||||||||||||||||||||||||
 |
NTHL082N65S3HF | 9.4800 | |
8755 | 0.00000000 | onsemi | FRFET®, SuperFET® III | Tube | Not For New Designs | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | NTHL082 | MOSFET (Metal Oxide) | TO-247-3 | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | 488-NTHL082N65S3HF | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 40A (Tc) | 82mOhm @ 20A, 10V | 5V @ 1mA | 79 nC @ 10 V | ±30V | 3330 pF @ 400 V | - | 313W (Tc) | ||||||||||||||||||||||||||||||
 |
FDBL9406-F085T6 | 5.8200 | |
1 | 0.00000000 | onsemi | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerSFN | FDBL9406 | MOSFET (Metal Oxide) | 8-HPSOF | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 488-FDBL9406-F085T6TR | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 40 V | 45A (Ta), 240A (Tc) | 1.21mOhm @ 50A, 10V | 3.5V @ 190µA | 75 nC @ 10 V | +20V, -16V | 4960 pF @ 25 V | - | 4.3W (Ta), 136.4W (Tc) | ||||||||||||||||||||||||||||||
|
FDD6688 | 1.1100 | |
149 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252, (D-Pak) | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 30 V | 84A (Ta) | 4.5V, 10V | 5mOhm @ 18A, 10V | 3V @ 250µA | 56 nC @ 10 V | ±20V | 3845 pF @ 15 V | - | 83W (Ta) | ||||||||||||||||||||||||||||||||||
|
BUK6607-75C,118 | - | |
9969 | 0.00000000 | NXP USA Inc. | Automotive, AEC-Q101, TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 75 V | 100A (Tc) | 10V | 7mOhm @ 25A, 10V | 2.8V @ 1mA | 123 nC @ 10 V | ±16V | 7600 pF @ 25 V | - | 204W (Tc) | ||||||||||||||||||||||||||||||||||
 |
BSS214NWH6327 | 1.0000 | |
7135 | 0.00000000 | Infineon Technologies | OptiMOS™ 2 | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | MOSFET (Metal Oxide) | PG-SOT323-3-2 | download | EAR99 | 8541.21.0095 | 1 | N-Channel | 20 V | 1.5A (Ta) | 2.5V, 4.5V | 140mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.8 nC @ 5 V | ±12V | 143 pF @ 10 V | - | 500mW (Ta) | ||||||||||||||||||||||||||||||||||
 |
AUIRGPS4070D0 | 11.6300 | |
933 | 0.00000000 | International Rectifier | Automotive, AEC-Q101 | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-274AA | AUIRGPS4070 | Standard | 750 W | PG-TO274-3-903 | download | EAR99 | 8541.29.0095 | 1 | 400V, 120A, 4.7Ohm, 15V | 210 ns | Trench | 600 V | 240 A | 360 A | 2V @ 15V, 120A | 5.7mJ (on), 4.2mJ (off) | 250 nC | 40ns/140ns | |||||||||||||||||||||||||||||||||
|
FPF1C2P5MF07AM | 1.0000 | |
6901 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Active | -40°C ~ 150°C (TJ) | Chassis Mount | F1 Module | 231 W | Single Phase Bridge Rectifier | F1 | download | 0000.00.0000 | 1 | Full Bridge Inverter | - | 620 V | 39 A | 1.6V @ 15V, 30A | 25 µA | No | ||||||||||||||||||||||||||||||||||||||
 |
BC847W,135 | 0.0200 | |
650 | 0.00000000 | NXP USA Inc. | Automotive, AEC-Q101 | Bulk | Active | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | 200 mW | SOT-323 | download | EAR99 | 8541.21.0075 | 1 | 45 V | 100 mA | 15nA (ICBO) | NPN | 400mV @ 5mA, 100mA | 110 @ 2mA, 5V | 100MHz | ||||||||||||||||||||||||||||||||||||||
 |
BUK9D23-40E,115 | - | |
2995 | 0.00000000 | Nexperia USA Inc. | * | Bulk | Active | download | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
BCM61B,215 | - | |
5875 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | BCM61 | - | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.21.0075 | 3,000 | |||||||||||||||||||||||||||||||||||||||||||||||
|
AUIRF1404S | 3.3600 | |
25 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 40 V | 75A (Tc) | 10V | 4mOhm @ 95A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 7360 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | ||||||||||||||||||||||||||||||||||
 |
BF721T1G | - | |
2316 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Active | -65°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | 1.5 W | SOT-223 (TO-261) | download | EAR99 | 8541.29.0075 | 1 | 300 V | 50 mA | 10nA (ICBO) | PNP | 800mV @ 5mA, 30mA | 50 @ 25mA, 20V | 60MHz | ||||||||||||||||||||||||||||||||||||||
|
AUIRFR3504Z | 0.8200 | |
7953 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | D-Pak | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 40 V | 42A (Tc) | 10V | 9mOhm @ 42A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±20V | 1510 pF @ 25 V | - | 90W (Tc) | ||||||||||||||||||||||||||||||||||
|
AUIRF1010EZS | - | |
5742 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | PG-TO263-3 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 60 V | 75A (Tc) | 10V | 8.5mOhm @ 51A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±20V | 2810 pF @ 25 V | - | 140W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
Wishlist (0 Items)