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Discrete Semiconductor Products(191)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Mounting Type | Package / Case | Technology | Supplier Device Package | REACH Status | Other Names | Standard Package | Speed | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
G3S06504B | - |  |
6442 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G3S06504B | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 9A (DC) | 1.7 V @ 4 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | |||
 |
G3S06520H | - | |
4715 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | Vendor Undefined | 4436-G3S06520H | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 20 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 26A | 1170pF @ 0V, 1MHz | |||
|
G4S06510HT | - | |
2882 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | Vendor Undefined | 4436-G4S06510HT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 20A | 550pF @ 0V, 1MHz | |||
 |
G5S06508CT | - | |
5427 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | Vendor Undefined | 4436-G5S06508CT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 31A | 550pF @ 0V, 1MHz | |||
 |
G5S06506QT | - | |
1714 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | 4-PowerTSFN | SiC (Silicon Carbide) Schottky | 4-DFN (8x8) | Vendor Undefined | 4436-G5S06506QT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 6 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 34A | 395pF @ 0V, 1MHz | |||
 |
G3S12010P | - | |
6152 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | Vendor Undefined | 4436-G3S12010P | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 110 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 37A | 765pF @ 0V, 1MHz | |||
 |
G4S06508HT | - | |
4162 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | Vendor Undefined | 4436-G4S06508HT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 18.5A | 395pF @ 0V, 1MHz | |||
|
G4S12020BM | - | |
3557 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G4S12020BM | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 33.2A (DC) | 1.6 V @ 10 A | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | |||
|
G5S12010PM | - | |
1002 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | Vendor Undefined | 4436-G5S12010PM | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 33A | 825pF @ 0V, 1MHz | |||
|
G5S06506HT | - | |
9507 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | Vendor Undefined | 4436-G5S06506HT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 6 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 18.5A | 395pF @ 0V, 1MHz | |||
|
G3S12050P | - | |
8723 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | Vendor Undefined | 4436-G3S12050P | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.8 V @ 150 A | 0 ns | 100 µA @ 1200 V | -55°C ~ 175°C | 117A | 7500pF @ 0V, 1MHz | |||
|
G5S06504QT | - | |
2284 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | 4-PowerTSFN | SiC (Silicon Carbide) Schottky | 4-DFN (8x8) | Vendor Undefined | 4436-G5S06504QT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.55 V @ 4 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 14A | 181pF @ 0V, 1MHz | |||
|
G5S12016BM | - | |
8991 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G5S12016BM | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 27.9A (DC) | 1.7 V @ 8 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | |||
|
G5S06504CT | - | |
9367 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | Vendor Undefined | 4436-G5S06504CT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.6 V @ 4 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 13.8A | 181pF @ 0V, 1MHz | |||
|
G3S06540B | - | |
6451 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G3S06540B | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 60A (DC) | 1.7 V @ 20 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | |||
|
G4S06515HT | - | |
5198 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | Vendor Undefined | 4436-G4S06515HT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 15 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 23.8A | 645pF @ 0V, 1MHz | |||
|
G3S06510M | - | |
2397 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | Vendor Undefined | 4436-G3S06510M | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 21A | 690pF @ 0V, 1MHz | |||
|
G4S06515CT | - | |
1064 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | Vendor Undefined | 4436-G4S06515CT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 15 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 35.8A | 645pF @ 0V, 1MHz | |||
 |
G5S6504Z | - | |
2833 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | 8-PowerTDFN | SiC (Silicon Carbide) Schottky | 8-DFN (4.9x5.75) | Vendor Undefined | 4436-G5S6504Z | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.6 V @ 4 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 15.45A | 181pF @ 0V, 1MHz | |||
|
G5S12020A | - | |
4021 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | Vendor Undefined | 4436-G5S12020A | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 20 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 63.5A | 1320pF @ 0V, 1MHz | |||
|
G3S12040B | - | |
8295 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G3S12040B | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 64.5A (DC) | 1.7 V @ 15 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | |||
|
G4S12020A | - | |
4610 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Vendor Undefined | 4436-G4S12020A | 1 | |||||||||||||||
|
G3S06520B | - | |
8866 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G3S06520B | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 40A | 690pF @ 0V, 1MHz | |||
|
G5S06508PT | - | |
9174 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | Vendor Undefined | 4436-G5S06508PT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 31.2A | 550pF @ 0V, 1MHz | |||
|
G5S06506AT | - | |
5460 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | Vendor Undefined | 4436-G5S06506AT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 6 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 24.5A | 395pF @ 0V, 1MHz | |||
|
G5S06502AT | - | |
5626 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | Vendor Undefined | 4436-G5S06502AT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 2 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 9.6A | 124pF @ 0V, 1MHz | |||
|
G5S12020PM | - | |
2323 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | Vendor Undefined | 4436-G5S12020PM | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 20 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 62A | 1320pF @ 0V, 1MHz | |||
|
G4S06508QT | - | |
8199 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | 4-PowerTSFN | SiC (Silicon Carbide) Schottky | 4-DFN (8x8) | Vendor Undefined | 4436-G4S06508QT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 34A | 395pF @ 0V, 1MHz | |||
 |
G4S06508JT | - | |
3661 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 Isolated Tab | SiC (Silicon Carbide) Schottky | TO-220ISO | Vendor Undefined | 4436-G4S06508JT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 23.5A | 395pF @ 0V, 1MHz | |||
|
G3S06505C | - | |
6424 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | Vendor Undefined | 4436-G3S06505C | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 5 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 22.5A | 424pF @ 0V, 1MHz |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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