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Discrete Semiconductor Products(191)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Mounting Type | Package / Case | Technology | Supplier Device Package | REACH Status | Other Names | Standard Package | Speed | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
G5S06520AT | - |  |
6350 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | Vendor Undefined | 4436-G5S06520AT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 20 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 68.8A | 1600pF @ 0V, 1MHz | |||
|
G3S06508A | - | |
8478 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | Vendor Undefined | 4436-G3S06508A | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 25.5A | 550pF @ 0V, 1MHz | |||
 |
G3S12002C | - | |
5481 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | Vendor Undefined | 4436-G3S12002C | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 2 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 8.8A | 170pF @ 0V, 1MHz | |||
 |
G5S12020BM | - | |
5996 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G5S12020BM | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 33A (DC) | 1.7 V @ 10 A | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | |||
|
G5S12016B | - | |
8269 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G5S12016B | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 27.9A (DC) | 1.7 V @ 8 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | |||
|
G3S12010M | - | |
8869 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | Vendor Undefined | 4436-G3S12010M | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 23.5A | 765pF @ 0V, 1MHz | |||
 |
G5S12002H | - | |
8748 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | Vendor Undefined | 4436-G5S12002H | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 2 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 7.5A | 170pF @ 0V, 1MHz | |||
|
G3S06502C | - | |
7907 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | Vendor Undefined | 4436-G3S06502C | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 2 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 9A | 123pF @ 0V, 1MHz | |||
|
G3S06510A | - | |
4908 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | Vendor Undefined | 4436-G3S06510A | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 35A | 690pF @ 0V, 1MHz | |||
|
G3S06508H | - | |
7687 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | Vendor Undefined | 4436-G3S06508H | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 14A | 550pF @ 0V, 1MHz | |||
|
G5S12005C | - | |
1555 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | Vendor Undefined | 4436-G5S12005C | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 5 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 20.95A | 424pF @ 0V, 1MHz | |||
|
G3S12004B | - | |
6760 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G3S12004B | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 8.5A (DC) | 1.7 V @ 2 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | |||
 |
G5S06506DT | - | |
9863 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | Vendor Undefined | 4436-G5S06506DT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 6 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 24A | 395pF @ 0V, 1MHz | |||
 |
G4S06510PT | - | |
2628 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | Vendor Undefined | 4436-G4S06510PT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 31.2A | 550pF @ 0V, 1MHz | |||
|
G5S12010A | - | |
4157 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | Vendor Undefined | 4436-G5S12010A | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 37A | 825pF @ 0V, 1MHz | |||
|
G5S12015A | - | |
6081 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | Vendor Undefined | 4436-G5S12015A | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 15 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 53A | 1370pF @ 0V, 1MHz | |||
|
G3S12010C | - | |
4786 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | Vendor Undefined | 4436-G3S12010C | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 33.2A | 765pF @ 0V, 1MHz | |||
|
G3S12002D | - | |
1785 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | Vendor Undefined | 4436-G3S12002D | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 2 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 7A | 136pF @ 0V, 1MHz | |||
|
G3S06510P | - | |
9563 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | Vendor Undefined | 4436-G3S06510P | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 32.8A | 690pF @ 0V, 1MHz | |||
|
G5S12030BM | - | |
9456 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G5S12030BM | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 55A (DC) | 1.7 V @ 15 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | |||
|
G3S06510D | - | |
2278 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | Vendor Undefined | 4436-G3S06510D | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 34A | 690pF @ 0V, 1MHz | |||
|
G3S06503C | - | |
3687 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | Vendor Undefined | 4436-G3S06503C | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 3 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 11.5A | 181pF @ 0V, 1MHz | |||
|
G5S06510HT | - | |
1209 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | Vendor Undefined | 4436-G5S06510HT | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | -55°C ~ 175°C | 23.8A | - | |||||
|
G5S12015PM | - | |
8703 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | Vendor Undefined | 4436-G5S12015PM | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 15 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 55A | 1370pF @ 0V, 1MHz | |||
 |
G4S06510QT | - | |
7248 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | 4-PowerTSFN | SiC (Silicon Carbide) Schottky | 4-DFN (8x8) | Vendor Undefined | 4436-G4S06510QT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 44.9A | 550pF @ 0V, 1MHz | |||
|
G4S12020D | - | |
4037 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | Vendor Undefined | 4436-G4S12020D | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 20 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 75A | 2600pF @ 0V, 1MHz | |||
 |
G52YT | - | |
7769 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | DO-214AC, SMA | SiC (Silicon Carbide) Schottky | SMA | Vendor Undefined | 4436-G52YT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 2 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 5.8A | 116.75pF @ 0V, 1MHz | |||
|
G3S06520A | - | |
1139 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | Vendor Undefined | 4436-G3S06520A | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 20 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 56.5A | 1170pF @ 0V, 1MHz | |||
|
G4S06516BT | - | |
5550 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G4S06516BT | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 25.9A (DC) | 1.7 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | |||
|
G4S06510CT | - | |
7640 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | Vendor Undefined | 4436-G4S06510CT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 31A | 550pF @ 0V, 1MHz |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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