Tel: +86-0755-83501315
Email: sales@sic-components.com
Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Diode Type | Voltage - Peak Reverse (Max) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
GB20SLT12-247D | - | ![]() |
5669 | 0.00000000 | GeneSiC Semiconductor | - | Tube | Obsolete | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247 | - | 1 (Unlimited) | 1242-1316 | EAR99 | 8541.10.0080 | 30 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 1200 V | 25A | 1.8 V @ 10 A | 50 µA @ 1200 V | -55°C ~ 175°C | |||||||||||||||||||||
![]() |
GBPC2506W | 4.2000 | ![]() |
8886 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC2506 | Standard | GBPC-W | download | RoHS Compliant | 1 (Unlimited) | 1242-1291 | EAR99 | 8541.10.0080 | 50 | 1.1 V @ 12.5 A | 5 µA @ 600 V | 25 A | Single Phase | 600 V | ||||||||||||||||||||
![]() |
GBPC2508W | 4.2000 | ![]() |
1 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC2508 | Standard | GBPC-W | download | RoHS Compliant | 1 (Unlimited) | 1242-1292 | EAR99 | 8541.10.0080 | 50 | 1.1 V @ 1.2 A | 5 µA @ 800 V | 25 A | Single Phase | 800 V | ||||||||||||||||||||
![]() |
GBPC1504W | 2.4180 | ![]() |
1714 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC1504 | Standard | GBPC-W | download | RoHS Compliant | 1 (Unlimited) | GBPC1504WGS | EAR99 | 8541.10.0080 | 50 | 1.1 V @ 7.5 A | 5 µA @ 400 V | 15 A | Single Phase | 400 V | ||||||||||||||||||||
![]() |
GBPC1506W | 2.4180 | ![]() |
5670 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC1506 | Standard | GBPC-W | download | RoHS Compliant | 1 (Unlimited) | GBPC1506WGS | EAR99 | 8541.10.0080 | 50 | 1.1 V @ 7.5 A | 5 µA @ 600 V | 15 A | Single Phase | 600 V | ||||||||||||||||||||
![]() |
GBPC1510W | 2.4180 | ![]() |
8311 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC1510 | Standard | GBPC-W | download | RoHS Compliant | 1 (Unlimited) | GBPC1510WGS | EAR99 | 8541.10.0080 | 50 | 1.1 V @ 7.5 A | 5 µA @ 1000 V | 15 A | Single Phase | 1 kV | ||||||||||||||||||||
![]() |
GBPC3501W | 2.8650 | ![]() |
5121 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC3501 | Standard | GBPC-W | download | RoHS Compliant | 1 (Unlimited) | GBPC3501WGS | EAR99 | 8541.10.0080 | 50 | 1.1 V @ 17.5 A | 5 µA @ 100 V | 35 A | Single Phase | 100 V | ||||||||||||||||||||
![]() |
GBPC3502W | 2.8650 | ![]() |
7330 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC3502 | Standard | GBPC-W | download | RoHS Compliant | 1 (Unlimited) | GBPC3502WGS | EAR99 | 8541.10.0080 | 50 | 1.1 V @ 17.5 A | 5 µA @ 200 V | 35 A | Single Phase | 200 V | ||||||||||||||||||||
![]() |
GBPC5001W | 4.0155 | ![]() |
7784 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC5001 | Standard | GBPC-W | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | 1.2 V @ 25 A | 5 µA @ 100 V | 50 A | Single Phase | 100 V | |||||||||||||||||||||
![]() |
GBPC5008W | 4.0155 | ![]() |
3277 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC5008 | Standard | GBPC-W | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | 1.2 V @ 25 A | 5 µA @ 800 V | 50 A | Single Phase | 800 V | |||||||||||||||||||||
![]() |
KBP204G | 0.2280 | ![]() |
9945 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBP | KBP204 | Standard | KBP | download | RoHS Compliant | 1 (Unlimited) | KBP204GGS | EAR99 | 8541.10.0080 | 500 | 1.1 V @ 2 A | 10 µA @ 400 V | 2 A | Single Phase | 400 V | ||||||||||||||||||||
![]() |
KBP210G | 0.2280 | ![]() |
2792 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBP | KBP210 | Standard | KBP | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 500 | 1.1 V @ 2 A | 10 µA @ 1000 V | 2 A | Single Phase | 1 kV | |||||||||||||||||||||
![]() |
KBPC2504W | 2.2995 | ![]() |
3961 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, KBPC-W | KBPC2504 | Standard | KBPC-W | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | 1.1 V @ 12.5 A | 5 µA @ 400 V | 25 A | Single Phase | 400 V | |||||||||||||||||||||
![]() |
KBPC2510W | 2.2995 | ![]() |
6108 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, KBPC-W | KBPC2510 | Standard | KBPC-W | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | 1.1 V @ 12.5 A | 10 µA @ 1000 V | 25 A | Single Phase | 1 kV | |||||||||||||||||||||
![]() |
KBPC35005W | 2.4720 | ![]() |
7866 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, KBPC-W | KBPC35005 | Standard | KBPC-W | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | 1.1 V @ 17.5 A | 5 µA @ 50 V | 35 A | Single Phase | 50 V | |||||||||||||||||||||
KBPC3510T | 2.4750 | ![]() |
6256 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, KBPC-T | KBPC3510 | Standard | KBPC-T | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | 1.1 V @ 17.5 A | 5 µA @ 1000 V | 35 A | Single Phase | 1 kV | ||||||||||||||||||||||
![]() |
KBPC5010W | 2.5875 | ![]() |
3036 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, KBPC-W | KBPC5010 | Standard | KBPC-W | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | 1.1 V @ 25 A | 5 µA @ 1000 V | 50 A | Single Phase | 1 kV | |||||||||||||||||||||
![]() |
MBR60045CTRL | - | ![]() |
5064 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Obsolete | Chassis Mount | Twin Tower | Schottky | Twin Tower | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 25 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Anode | 45 V | 300A | 600 mV @ 300 A | 5 mA @ 45 V | -55°C ~ 150°C | ||||||||||||||||||||||
![]() |
G3R160MT17J | 12.9800 | ![]() |
1161 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | G3R160 | SiCFET (Silicon Carbide) | TO-263-7 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R160MT17J | EAR99 | 8541.29.0095 | 50 | N-Channel | 1700 V | 22A (Tc) | 15V | 208mOhm @ 12A, 15V | 2.7V @ 5mA | 51 nC @ 15 V | ±15V | 1272 pF @ 1000 V | - | 187W (Tc) | ||||||||||||||
![]() |
G3R450MT17J | 8.0400 | ![]() |
7 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | G3R450 | SiCFET (Silicon Carbide) | TO-263-7 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R450MT17J | EAR99 | 8541.29.0095 | 50 | N-Channel | 1700 V | 9A (Tc) | 15V | 585mOhm @ 4A, 15V | 2.7V @ 2mA | 18 nC @ 15 V | ±15V | 454 pF @ 1000 V | - | 91W (Tc) | ||||||||||||||
![]() |
G3R75MT12J | 11.0300 | ![]() |
9581 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | G3R75 | SiCFET (Silicon Carbide) | TO-263-7 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R75MT12J | EAR99 | 8541.29.0095 | 50 | N-Channel | 1200 V | 42A (Tc) | 15V | 90mOhm @ 20A, 15V | 2.69V @ 7.5mA | 54 nC @ 15 V | ±15V | 1560 pF @ 800 V | - | 224W (Tc) | ||||||||||||||
![]() |
GD2X30MPS06N | 24.2385 | ![]() |
2827 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Chassis Mount | SOT-227-4, miniBLOC | GD2X | SiC (Silicon Carbide) Schottky | SOT-227 | download | RoHS Compliant | 1 (Unlimited) | REACH Unaffected | 1242-GD2X30MPS06N | EAR99 | 8541.10.0080 | 10 | No Recovery Time > 500mA (Io) | 2 Independent | 650 V | 42A (DC) | -55°C ~ 175°C | ||||||||||||||||||||
![]() |
G3R75MT12D | 10.5000 | ![]() |
3 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | G3R75 | SiCFET (Silicon Carbide) | TO-247-3 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R75MT12D | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 41A (Tc) | 15V | 90mOhm @ 20A, 15V | 2.69V @ 7.5mA | 54 nC @ 15 V | ±15V | 1560 pF @ 800 V | - | 207W (Tc) | ||||||||||||||
![]() |
G2R1000MT33J | 18.6900 | ![]() |
1 | 0.00000000 | GeneSiC Semiconductor | G2R™ | Tube | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | G2R1000 | SiCFET (Silicon Carbide) | TO-263-7 | download | RoHS Compliant | 1 (Unlimited) | 1242-G2R1000MT33J | EAR99 | 8541.29.0095 | 50 | N-Channel | 3300 V | 4A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 3.5V @ 2mA | 21 nC @ 20 V | +20V, -5V | 238 pF @ 1000 V | - | 74W (Tc) | ||||||||||||||
G3R20MT12K | 36.0900 | ![]() |
3655 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | G3R20 | SiCFET (Silicon Carbide) | TO-247-4 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R20MT12K | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 128A (Tc) | 15V | 24mOhm @ 60A, 15V | 2.69V @ 15mA | 219 nC @ 15 V | ±15V | 5873 pF @ 800 V | - | 542W (Tc) | |||||||||||||||
![]() |
GD2X50MPS12N | 46.3900 | ![]() |
135 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Chassis Mount | SOT-227-4, miniBLOC | GD2X | SiC (Silicon Carbide) Schottky | SOT-227 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 1242-GD2X50MPS12N | EAR99 | 8541.10.0080 | 10 | No Recovery Time > 500mA (Io) | 2 Independent | 1200 V | 76A (DC) | 1.8 V @ 50 A | 0 ns | 15 µA @ 1200 V | -55°C ~ 175°C | |||||||||||||||||
![]() |
GD2X30MPS06D | 9.7900 | ![]() |
695 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Through Hole | TO-247-3 | GD2X | SiC (Silicon Carbide) Schottky | TO-247-3 | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 1242-GD2X30MPS06D | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 600 V | 30A (DC) | 0 ns | 175°C | |||||||||||||||||||
![]() |
GE04MPS06E | 1.6500 | ![]() |
2 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Cut Tape (CT) | Discontinued at SIC | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252-2 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 2,500 | No Recovery Time > 500mA (Io) | 650 V | 1.35 V @ 4 A | 0 ns | 5 µA @ 650 V | -55°C ~ 175°C | 11A | 186pF @ 1V, 1MHz | |||||||||||||||||||
![]() |
GD2X60MPS06N | 40.4900 | ![]() |
585 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Chassis Mount | SOT-227-4, miniBLOC | GD2X | SiC (Silicon Carbide) Schottky | SOT-227 | download | 1 (Unlimited) | 1242-GD2X60MPS06N | EAR99 | 8541.10.0080 | 10 | No Recovery Time > 500mA (Io) | 2 Independent | 650 V | 70A (DC) | 1.8 V @ 60 A | 0 ns | 10 µA @ 650 V | -55°C ~ 175°C | |||||||||||||||||||
1N8030-GA | - | ![]() |
5782 | 0.00000000 | GeneSiC Semiconductor | - | Tube | Obsolete | Through Hole | TO-257-3 | 1N8030 | SiC (Silicon Carbide) Schottky | TO-257 | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 10 | No Recovery Time > 500mA (Io) | 650 V | 1.39 V @ 750 mA | 0 ns | 5 µA @ 650 V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz |
Daily average RFQ Volume
Standard Product Unit
Worldwide Manufacturers
In-stock Warehouse