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Email: sales@sic-components.com
Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Diode Type | Voltage - Peak Reverse (Max) |
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KBPC2510T | 2.2995 | ![]() |
3881 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, KBPC-T | KBPC2510 | Standard | KBPC-T | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | 1.1 V @ 12.5 A | 10 µA @ 1000 V | 25 A | Single Phase | 1 kV | ||||||||||||||||||||||
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KBPC3501W | 2.4720 | ![]() |
7741 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, KBPC-W | KBPC3501 | Standard | KBPC-W | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | 1.1 V @ 17.5 A | 5 µA @ 100 V | 35 A | Single Phase | 100 V | |||||||||||||||||||||
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KBPC3504W | 2.4720 | ![]() |
7108 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, KBPC-W | KBPC3504 | Standard | KBPC-W | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | 1.1 V @ 17.5 A | 10 µA @ 400 V | 35 A | Single Phase | 400 V | |||||||||||||||||||||
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KBPC3506W | 2.4720 | ![]() |
2086 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, KBPC-W | KBPC3506 | Standard | KBPC-W | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | 1.1 V @ 17.5 A | 5 µA @ 600 V | 35 A | Single Phase | 600 V | |||||||||||||||||||||
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KBPC5002W | 2.5875 | ![]() |
5465 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, KBPC-W | KBPC5002 | Standard | KBPC-W | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | 1.1 V @ 25 A | 5 µA @ 200 V | 50 A | Single Phase | 200 V | |||||||||||||||||||||
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M3P75A-40 | - | ![]() |
5748 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Obsolete | - | Chassis Mount | Module | Standard | Module | - | 1 (Unlimited) | EAR99 | 8541.10.0080 | 24 | 10 µA @ 400 V | 75 A | Three Phase | 400 V | ||||||||||||||||||||||||
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MBR600150CTR | 129.3585 | ![]() |
2637 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis Mount | Twin Tower | MBR600150 | Schottky | Twin Tower | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 40 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Anode | 150 V | 300A | 880 mV @ 300 A | 3 mA @ 150 V | -55°C ~ 150°C | ||||||||||||||||||||
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MBR600200CT | 129.3585 | ![]() |
4575 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis Mount | Twin Tower | MBR600200 | Schottky | Twin Tower | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 40 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 200 V | 300A | 920 mV @ 300 A | 3 mA @ 200 V | -55°C ~ 150°C | ||||||||||||||||||||
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MBRT40030RL | - | ![]() |
5183 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Obsolete | Chassis Mount | Three Tower | Schottky | Three Tower | - | 1 (Unlimited) | EAR99 | 8541.10.0080 | 25 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Anode | 30 V | 200A | 580 mV @ 200 A | 3 mA @ 30 V | -55°C ~ 150°C | ||||||||||||||||||||||
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FST6310M | - | ![]() |
7770 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Obsolete | Chassis Mount | D61-3M | Schottky | D61-3M | - | 1 (Unlimited) | EAR99 | 8541.10.0080 | 25 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 10 V | 30A | 700 mV @ 30 A | 1 mA @ 10 V | -55°C ~ 150°C | ||||||||||||||||||||||
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FST7345M | - | ![]() |
9556 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Obsolete | Chassis Mount | D61-3M | Schottky | D61-3M | - | 1 (Unlimited) | EAR99 | 8541.10.0080 | 25 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 45 V | 35A | 700 mV @ 35 A | 1 mA @ 45 V | -55°C ~ 150°C | ||||||||||||||||||||||
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MBRF400200 | - | ![]() |
6322 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Obsolete | Chassis Mount | TO-244AB | Schottky | TO-244AB | - | 1 (Unlimited) | EAR99 | 8541.10.0080 | 25 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 200 V | 200A | 920 mV @ 200 A | 1 mA @ 200 V | -55°C ~ 150°C | ||||||||||||||||||||||
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MBRTA800100R | - | ![]() |
8649 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Obsolete | Chassis Mount | Three Tower | Schottky | Three Tower | - | 1 (Unlimited) | EAR99 | 8541.10.0080 | 18 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Anode | 100 V | 400A | 840 mV @ 400 A | 1 mA @ 100 V | -55°C ~ 150°C | ||||||||||||||||||||||
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MBRTA80080R | - | ![]() |
5438 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Obsolete | Chassis Mount | Three Tower | Schottky | Three Tower | - | 1 (Unlimited) | EAR99 | 8541.10.0080 | 18 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Anode | 80 V | 400A | 840 mV @ 400 A | 1 mA @ 80 V | -55°C ~ 150°C | ||||||||||||||||||||||
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MURH7060R | 49.5120 | ![]() |
1183 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis Mount | D-67 | MURH7060 | Standard | D-67 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 36 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 1.7 V @ 70 A | 110 ns | 25 µA @ 600 V | -55°C ~ 150°C | 70A | - | |||||||||||||||||||
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GA50JT12-263 | - | ![]() |
6024 | 0.00000000 | GeneSiC Semiconductor | * | Tube | Obsolete | - | 1 (Unlimited) | OBSOLETE | 50 | - | - | ||||||||||||||||||||||||||||||||
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GD10MPS12A | 4.1200 | ![]() |
1 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 1242-GD10MPS12A | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 1200 V | 1.8 V @ 10 A | 0 ns | 5 µA @ 1200 V | -55°C ~ 175°C | 25A | 367pF @ 1V, 1MHz | ||||||||||||||||||
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GD10MPS12H | 4.9900 | ![]() |
2 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 1242-GD10MPS12H | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 175°C | 10A | - | ||||||||||||||||||||
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GD2X100MPS06N | 47.9100 | ![]() |
44 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Chassis Mount | SOT-227-4, miniBLOC | GD2X | SiC (Silicon Carbide) Schottky | SOT-227 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 1242-GD2X100MPS06N | EAR99 | 8541.10.0080 | 10 | No Recovery Time > 500mA (Io) | 2 Independent | 650 V | 108A (DC) | 1.8 V @ 100 A | 0 ns | 5 µA @ 650 V | -55°C ~ 175°C | |||||||||||||||||
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G3R60MT07D | 10.1400 | ![]() |
1 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | - | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 1242-G3R60MT07D | EAR99 | 8541.29.0095 | 30 | - | 750 V | - | - | - | - | +20V, -10V | - | - | ||||||||||||||||
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MSRT20080D | 110.1030 | ![]() |
2563 | 0.00000000 | GeneSiC Semiconductor | * | Bulk | Active | MSRT200 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 40 | |||||||||||||||||||||||||||||||
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GB2X50MPS17-227 | 98.1200 | ![]() |
116 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Chassis Mount | SOT-227-4, miniBLOC | GB2X50 | SiC (Silicon Carbide) Schottky | SOT-227 | download | RoHS Compliant | 1 (Unlimited) | REACH Unaffected | 1242-1350 | EAR99 | 8541.10.0080 | 10 | No Recovery Time > 500mA (Io) | 2 Independent | 1700 V | 136A (DC) | 1.8 V @ 50 A | 0 ns | 50 µA @ 1700 V | -55°C ~ 175°C | |||||||||||||||||
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G3R160MT17D | 12.2400 | ![]() |
9458 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | G3R160 | SiCFET (Silicon Carbide) | TO-247-3 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R160MT17D | EAR99 | 8541.29.0095 | 30 | N-Channel | 1700 V | 21A (Tc) | 15V | 208mOhm @ 12A, 15V | 2.7V @ 5mA | 51 nC @ 15 V | ±15V | 1272 pF @ 1000 V | - | 175W (Tc) | ||||||||||||||
G3R30MT12K | 22.5300 | ![]() |
844 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | G3R30 | SiCFET (Silicon Carbide) | TO-247-4 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R30MT12K | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 90A (Tc) | 15V | 36mOhm @ 50A, 15V | 2.69V @ 12mA | 155 nC @ 15 V | ±15V | 3901 pF @ 800 V | - | 400W (Tc) | |||||||||||||||
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G3R20MT17N | 135.4600 | ![]() |
47 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | G3R20 | SiCFET (Silicon Carbide) | SOT-227 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R20MT17N | EAR99 | 8541.29.0095 | 10 | N-Channel | 1700 V | 100A (Tc) | 15V | 26mOhm @ 75A, 15V | 2.7V @ 15mA | 400 nC @ 15 V | ±15V | 10187 pF @ 1000 V | - | 523W (Tc) | ||||||||||||||
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G3R450MT17D | 7.2100 | ![]() |
3 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | G3R450 | SiCFET (Silicon Carbide) | TO-247-3 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R450MT17D | EAR99 | 8541.29.0095 | 30 | N-Channel | 1700 V | 9A (Tc) | 15V | 585mOhm @ 4A, 15V | 2.7V @ 2mA | 18 nC @ 15 V | ±15V | 454 pF @ 1000 V | - | 88W (Tc) | ||||||||||||||
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G2R1000MT17D | 5.4400 | ![]() |
717 | 0.00000000 | GeneSiC Semiconductor | G2R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | G2R1000 | SiCFET (Silicon Carbide) | TO-247-3 | download | RoHS Compliant | 1 (Unlimited) | 1242-G2R1000MT17D | EAR99 | 8541.29.0095 | 30 | N-Channel | 1700 V | 5A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 5.5V @ 500µA | 11 nC @ 20 V | +25V, -10V | 111 pF @ 1000 V | - | 44W (Tc) | ||||||||||||||
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G3R350MT12J | 5.5100 | ![]() |
5 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | G3R350 | SiCFET (Silicon Carbide) | TO-263-7 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R350MT12J | EAR99 | 8541.29.0095 | 50 | N-Channel | 1200 V | 11A (Tc) | 15V | 420mOhm @ 4A, 15V | 2.69V @ 2mA | 12 nC @ 15 V | ±15V | 334 pF @ 800 V | - | 75W (Tc) | ||||||||||||||
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G3R60MT07J | 10.7000 | ![]() |
1 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | - | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | TO-263-7 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 1242-G3R60MT07J | EAR99 | 8541.29.0095 | 50 | - | 750 V | - | - | - | - | +20V, -10V | - | - | ||||||||||||||||
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G2R50MT33K | 295.6700 | ![]() |
78 | 0.00000000 | GeneSiC Semiconductor | G2R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4 | download | RoHS Compliant | 1 (Unlimited) | 1242-G2R50MT33K | EAR99 | 8541.29.0095 | 30 | N-Channel | 3300 V | 63A (Tc) | 20V | 50mOhm @ 40A, 20V | 3.5V @ 10mA (Typ) | 340 nC @ 20 V | +25V, -10V | 7301 pF @ 1000 V | Standard | 536W (Tc) |
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