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Email: sales@sic-components.com
Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Input | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Current - Max | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Vce(on) (Max) @ Vge, Ic | Diode Type | Voltage - Peak Reverse (Max) | Current - Collector Cutoff (Max) | NTC Thermistor | Input Capacitance (Cies) @ Vce | Resistance @ If, F |
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FR40K05 | 12.8985 | ![]() |
6716 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis, Stud Mount | DO-203AB, DO-5, Stud | Standard | DO-5 | download | RoHS Compliant | 1 (Unlimited) | FR40K05GN | EAR99 | 8541.10.0080 | 100 | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | 1 V @ 40 A | 500 ns | 25 µA @ 100 V | -40°C ~ 125°C | 40A | - | |||||||||||||||||||||||||||||||
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FR6BR02 | 5.1225 | ![]() |
9494 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis, Stud Mount | DO-203AA, DO-4, Stud | Standard, Reverse Polarity | DO-4 | download | RoHS Compliant | 1 (Unlimited) | FR6BR02GN | EAR99 | 8541.10.0080 | 250 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | 1.4 V @ 6 A | 200 ns | 25 µA @ 50 V | -65°C ~ 150°C | 6A | - | |||||||||||||||||||||||||||||||
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GBL04 | 2.9400 | ![]() |
4711 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | download | RoHS Compliant | 1 (Unlimited) | GBL04GN | EAR99 | 8541.10.0080 | 500 | 1.1 V @ 4 A | 5 µA @ 400 V | 4 A | Single Phase | 400 V | |||||||||||||||||||||||||||||||||
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GBPC15005T | 2.4180 | ![]() |
7711 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC15005 | Standard | GBPC | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | 1.1 V @ 7.5 A | 5 µA @ 50 V | 15 A | Single Phase | 50 V | |||||||||||||||||||||||||||||||||
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GBPC1501T | 2.4180 | ![]() |
1134 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC1501 | Standard | GBPC | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | 1.1 V @ 7.5 A | 5 µA @ 100 V | 15 A | Single Phase | 100 V | |||||||||||||||||||||||||||||||||
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MBR500100CTR | - | ![]() |
2210 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Obsolete | Chassis Mount | Twin Tower | Schottky, Reverse Polarity | Twin Tower | download | RoHS Compliant | 1 (Unlimited) | MBR500100CTRGN | EAR99 | 8541.10.0080 | 25 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Anode | 100 V | 250A | 880 mV @ 250 A | 1 mA @ 20 V | -55°C ~ 150°C | ||||||||||||||||||||||||||||||||
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MBR60060CTR | 129.3585 | ![]() |
7033 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis Mount | Twin Tower | MBR60060 | Schottky | Twin Tower | download | RoHS Compliant | 1 (Unlimited) | MBR60060CTRGN | EAR99 | 8541.10.0080 | 40 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Anode | 60 V | 300A | 800 mV @ 300 A | 1 mA @ 20 V | -55°C ~ 150°C | |||||||||||||||||||||||||||||||
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MBR8020 | 21.1680 | ![]() |
9258 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis, Stud Mount | DO-203AB, DO-5, Stud | Schottky | DO-5 | download | RoHS Compliant | 1 (Unlimited) | MBR8020GN | EAR99 | 8541.10.0080 | 100 | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | 750 mV @ 80 A | 1 mA @ 20 V | -55°C ~ 150°C | 80A | - | ||||||||||||||||||||||||||||||||
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GC02MPS12-220 | 1.3770 | ![]() |
2249 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Through Hole | TO-220-2 | GC02MPS12 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | RoHS Compliant | 1 (Unlimited) | REACH Unaffected | 1242-1323 | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 1200 V | 1.8 V @ 2 A | 0 ns | 2 µA @ 1200 V | -55°C ~ 175°C | 12A | 127pF @ 1V, 1MHz | |||||||||||||||||||||||||||||
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GA01PNS150-201 | 561.0000 | ![]() |
5655 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 175°C (TJ) | DO-201AD, Axial | GA01PNS150 | DO-201 | download | RoHS Compliant | 1 (Unlimited) | 1242-1347 | EAR99 | 8541.10.0080 | 10 | 1 A | 22pF @ 1V, 1MHz | PIN - Single | 15000V | - | ||||||||||||||||||||||||||||||||||
G3R40MT12K | 17.6700 | ![]() |
4250 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | G3R40 | SiCFET (Silicon Carbide) | TO-247-4 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R40MT12K | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 71A (Tc) | 15V | 48mOhm @ 35A, 15V | 2.69V @ 10mA | 106 nC @ 15 V | ±15V | 2929 pF @ 800 V | - | 333W (Tc) | |||||||||||||||||||||||||||
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G3R40MT12J | 17.9800 | ![]() |
39 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | G3R40 | SiCFET (Silicon Carbide) | TO-263-7 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R40MT12J | EAR99 | 8541.29.0095 | 50 | N-Channel | 1200 V | 75A (Tc) | 15V | 48mOhm @ 35A, 15V | 2.69V @ 10mA | 106 nC @ 15 V | ±15V | 2929 pF @ 800 V | - | 374W (Tc) | ||||||||||||||||||||||||||
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GE10MPS06E | 2.7700 | ![]() |
9292 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Cut Tape (CT) | Discontinued at SIC | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | GE10MPS06 | SiC (Silicon Carbide) Schottky | TO-252-2 | download | RoHS Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 2,500 | No Recovery Time > 500mA (Io) | 650 V | -55°C ~ 175°C | 26A | 466pF @ 1V, 1MHz | |||||||||||||||||||||||||||||||||
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G3R45MT17D | 32.7300 | ![]() |
4427 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | G3R45 | SiCFET (Silicon Carbide) | TO-247-3 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R45MT17D | EAR99 | 8541.29.0095 | 30 | N-Channel | 1700 V | 61A (Tc) | 15V | 58mOhm @ 40A, 15V | 2.7V @ 8mA | 182 nC @ 15 V | ±15V | 4523 pF @ 1000 V | - | 438W (Tc) | ||||||||||||||||||||||||||
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GA100SCPL12-227E | - | ![]() |
2987 | 0.00000000 | GeneSiC Semiconductor | - | Tube | Obsolete | - | - | - | GA100 | - | - | - | - | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 10 | - | - | - | - | - | - | - | - | |||||||||||||||||||||||||||||
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G3R30MT12J | 22.8300 | ![]() |
489 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | G3R30 | SiCFET (Silicon Carbide) | TO-263-7 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R30MT12J | EAR99 | 8541.29.0095 | 50 | N-Channel | 1200 V | 96A (Tc) | 15V | 36mOhm @ 50A, 15V | 2.69V @ 12mA | 155 nC @ 15 V | ±15V | 3901 pF @ 800 V | - | 459W (Tc) | ||||||||||||||||||||||||||
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GB100XCP12-227 | - | ![]() |
4226 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Obsolete | -40°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4 | Standard | SOT-227 | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 10 | Single | PT | 1200 V | 100 A | 2V @ 15V, 100A | 1 mA | No | 8.55 nF @ 25 V | ||||||||||||||||||||||||||||||||
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G3R40MT12D | 17.4200 | ![]() |
6690 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | G3R40 | SiCFET (Silicon Carbide) | TO-247-3 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R40MT12D | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 71A (Tc) | 15V | 48mOhm @ 35A, 15V | 2.69V @ 10mA | 106 nC @ 15 V | ±15V | 2929 pF @ 800 V | - | 333W (Tc) | ||||||||||||||||||||||||||
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GA10JT12-247 | - | ![]() |
9924 | 0.00000000 | GeneSiC Semiconductor | - | Tube | Obsolete | 175°C (TJ) | Through Hole | TO-247-3 | SiC (Silicon Carbide Junction Transistor) | TO-247AB | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | - | 1200 V | 10A (Tc) | - | 140mOhm @ 10A | - | - | - | 170W (Tc) | |||||||||||||||||||||||||||||||
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G3R160MT12D | 6.5200 | ![]() |
8130 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | G3R160 | SiCFET (Silicon Carbide) | TO-247-3 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R160MT12D | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 22A (Tc) | 15V | 192mOhm @ 10A, 15V | 2.69V @ 5mA | 28 nC @ 15 V | ±15V | 730 pF @ 800 V | - | 123W (Tc) | ||||||||||||||||||||||||||
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GD50MPS12H | 15.7700 | ![]() |
398 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 1242-GD50MPS12H | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.8 V @ 50 A | 0 ns | 15 µA @ 1200 V | -55°C ~ 175°C | 92A | 1835pF @ 1V, 1MHz | ||||||||||||||||||||||||||||||
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GC05MPS33J | 23.9900 | ![]() |
5673 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiC (Silicon Carbide) Schottky | TO-263-7 | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 1242-GC05MPS33J | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 3300 V | 0 ns | 175°C | 5A | - | ||||||||||||||||||||||||||||||||
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GD15MPS17H | 11.8000 | ![]() |
291 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 1242-GD15MPS17H | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1700 V | 1.8 V @ 15 A | 0 ns | 20 µA @ 1700 V | -55°C ~ 175°C | 36A | 1082pF @ 1V, 1MHz | ||||||||||||||||||||||||||||||
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GD2X30MPS12D | 17.3000 | ![]() |
170 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Through Hole | TO-247-3 | GD2X | SiC (Silicon Carbide) Schottky | TO-247-3 | download | RoHS Compliant | 1 (Unlimited) | REACH Unaffected | 1242-GD2X30MPS12D | EAR99 | 8541.10.0080 | 30 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 1200 V | 55A (DC) | 1.8 V @ 30 A | 20 µA @ 1200 V | -55°C ~ 175°C | ||||||||||||||||||||||||||||||
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GD2X25MPS17N | 55.7100 | ![]() |
262 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Chassis Mount | SOT-227-4, miniBLOC | GD2X | SiC (Silicon Carbide) Schottky | SOT-227 | download | 1 (Unlimited) | 1242-GD2X25MPS17N | EAR99 | 8541.10.0080 | 10 | No Recovery Time > 500mA (Io) | 2 Independent | 1700 V | 50A (DC) | 1.8 V @ 25 A | 0 ns | 20 µA @ 1700 V | -55°C ~ 175°C | |||||||||||||||||||||||||||||||
G3R12MT12K | 69.1800 | ![]() |
8861 | 0.00000000 | GeneSiC Semiconductor | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | G3R12M | SiCFET (Silicon Carbide) | TO-247-4 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R12MT12K | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 157A (Tc) | 15V, 18V | 13mOhm @ 100A, 18V | 2.7V @ 50mA | 288 nC @ 15 V | +22V, -10V | 9335 pF @ 800 V | - | 567W (Tc) | |||||||||||||||||||||||||||
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GD2X150MPS06N | 69.0500 | ![]() |
134 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Chassis Mount | SOT-227-4, miniBLOC | GD2X | SiC (Silicon Carbide) Schottky | SOT-227 | download | 1 (Unlimited) | 1242-GD2X150MPS06N | EAR99 | 8541.10.0080 | 10 | No Recovery Time > 500mA (Io) | 2 Independent | 650 V | 150A (DC) | 1.8 V @ 150 A | 0 ns | 10 µA @ 650 V | -55°C ~ 175°C | |||||||||||||||||||||||||||||||
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GBJ20G | 0.9120 | ![]() |
9792 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBJ | GBJ20 | Standard | GBJ | download | ROHS3 Compliant | 1242-GBJ20G | EAR99 | 8541.10.0080 | 200 | 1 V @ 10 A | 5 µA @ 400 V | 20 A | Single Phase | 400 V | |||||||||||||||||||||||||||||||||
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MSRTA300120D | 159.9075 | ![]() |
4570 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis Mount | Module | MSRTA300 | Standard | - | download | ROHS3 Compliant | 1242-MSRTA300120D | EAR99 | 8541.10.0080 | 24 | Standard Recovery >500ns, > 200mA (Io) | 1 Pair Series Connection | 1200 V | 300A | 1.1 V @ 300 A | 20 µA @ 1200 V | -55°C ~ 150°C | ||||||||||||||||||||||||||||||||
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MSRT10080D | 87.1935 | ![]() |
8568 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis Mount | Three Tower | MSRT100 | Standard | Three Tower | download | ROHS3 Compliant | 1242-MSRT10080D | EAR99 | 8541.10.0080 | 40 | Standard Recovery >500ns, > 200mA (Io) | 1 Pair Series Connection | 800 V | 100A | 1.1 V @ 100 A | 10 µA @ 800 V | -55°C ~ 150°C |
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