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Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | DataSheet | RoHS Status | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Vgs (Max) | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) |
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P3D06010E2 | 4.1600 | ![]() |
8153 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-252-2 | SiC (Silicon Carbide) Schottky | TO-252-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06010E2TR | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 44 µA @ 650 V | -55°C ~ 175°C | 28A | ||||||||||||||
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P3M06060K3 | 10.3800 | ![]() |
9755 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3L | download | ROHS3 Compliant | REACH Affected | 4237-P3M06060K3 | 1 | N-Channel | 650 V | 48A | 15V | 79mOhm @ 20A, 15V | 2.2V @ 20mA (Typ) | +20V, -8V | - | 188W | |||||||||
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P3M12160K4 | 8.8300 | ![]() |
9289 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | download | ROHS3 Compliant | REACH Affected | 4237-P3M12160K4 | 1 | N-Channel | 1200 V | 19A | 15V | 192mOhm @ 10A, 15V | 2.4V @ 2.5mA (Typ) | +21V, -8V | - | 110W | |||||||||
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P3D06006F2 | 2.5000 | ![]() |
2548 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220F-2 | SiC (Silicon Carbide) Schottky | TO-220F-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06006F2 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 30 µA @ 650 V | -55°C ~ 175°C | 15A | ||||||||||||||
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P3M06300D8 | 4.9800 | ![]() |
7160 | 0.00000000 | PN Junction Semiconductor | P3M | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | DFN8*8 | SiCFET (Silicon Carbide) | DFN8*8 | download | ROHS3 Compliant | REACH Affected | 4237-P3M06300D8TR | 1 | N-Channel | 650 V | 9A | 15V | 500mOhm @ 4.5A, 15V | 2.2V @ 5mA | +20V, -8V | - | 32W | |||||||||
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P3D06006G2 | 2.5000 | ![]() |
3063 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-263-2 | SiC (Silicon Carbide) Schottky | TO-263-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06006G2TR | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 30 µA @ 650 V | -55°C ~ 175°C | 21A | ||||||||||||||
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P3D12030K2 | 14.9200 | ![]() |
2635 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12030K2 | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 65 µA @ 650 V | -55°C ~ 175°C | 57A | ||||||||||||||
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P6D12002E2 | 2.6900 | ![]() |
9835 | 0.00000000 | PN Junction Semiconductor | P6D | Tape & Reel (TR) | Active | TO-252-2 | SiC (Silicon Carbide) Schottky | TO-252-2 | download | ROHS3 Compliant | REACH Affected | 4237-P6D12002E2TR | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 8A | ||||||||||||||
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P3D06004E2 | 2.1000 | ![]() |
8434 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-252-2 | SiC (Silicon Carbide) Schottky | TO-252-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06004E2TR | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 20 µA @ 650 V | -55°C ~ 175°C | 12A | ||||||||||||||
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P3M171K0G7 | 6.1000 | ![]() |
7429 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | D2PAK-7 | download | ROHS3 Compliant | REACH Affected | 4237-P3M171K0G7 | EAR99 | 8541.29.0095 | 1 | N-Channel | 1700 V | 7A | 15V | 1.4Ohm @ 2A, 15V | 2.2V @ 2mA (Typ) | +19V, -8V | - | 100W | |||||||
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P3M12160K3 | 8.8300 | ![]() |
8824 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3L | download | ROHS3 Compliant | REACH Affected | 4237-P3M12160K3 | EAR99 | 8541.29.0095 | 1 | N-Channel | 1200 V | 19A | 15V | 192mOhm @ 10A, 15V | 2.4V @ 2.5mA (Typ) | +21V, -8V | - | 110W | |||||||
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P3D06020F2 | 8.8400 | ![]() |
7762 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220F-2 | SiC (Silicon Carbide) Schottky | TO-220F-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06020F2 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 29A | ||||||||||||||
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P3D06016I2 | 7.7800 | ![]() |
2155 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220I-2 | SiC (Silicon Carbide) Schottky | TO-220I-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06016I2 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 45 µA @ 650 V | -55°C ~ 175°C | 28A | ||||||||||||||
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P3M12025K3 | 28.7400 | ![]() |
2069 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3L | download | ROHS3 Compliant | REACH Affected | 4237-P3M12025K3 | 1 | N-Channel | 1200 V | 113A | 15V | 35mOhm @ 50A, 15V | 2.4V @ 17.7mA (Typ) | +21V, -10V | - | 524W | |||||||||
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P3D06020P3 | 8.8400 | ![]() |
6681 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | SiC (Silicon Carbide) Schottky | TO-3PF-3 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06020P3 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 44 µA @ 650 V | -55°C ~ 175°C | 40A | |||||||||||||||
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P3D06040K3 | 13.8400 | ![]() |
2820 | 0.00000000 | PN Junction Semiconductor | P6D | Tube | Active | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247-3 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06040K3 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 100 µA @ 650 V | -55°C ~ 175°C | 106A | ||||||||||||||
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P3M171K0F3 | 6.1000 | ![]() |
2987 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220F-2 | SiCFET (Silicon Carbide) | TO-220F-2L | download | ROHS3 Compliant | REACH Affected | 4237-P3M171K0F3 | 1 | N-Channel | 1700 V | 5.5A | 15V | 1.4Ohm @ 2A, 15V | 2.2V @ 2mA (Typ) | +19V, -8V | - | 51W | |||||||||
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P3D12005E2 | 4.5000 | ![]() |
1816 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-252-2 | SiC (Silicon Carbide) Schottky | TO-252-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12005E2TR | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 44 µA @ 650 V | -55°C ~ 175°C | 19A | ||||||||||||||
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P3D06004T2 | 2.1000 | ![]() |
2096 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06004T2 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 20 µA @ 650 V | -55°C ~ 175°C | 15A | ||||||||||||||
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P3M173K0K3 | 5.0800 | ![]() |
6554 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3L | download | ROHS3 Compliant | REACH Affected | 4237-P3M173K0K3 | 1 | N-Channel | 1700 V | 4A | 15V | 3.6Ohm @ 600mA, 15V | 2.2V @ 600µA (Typ) | +19V, -8V | - | 63W | |||||||||
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P3D06008I2 | 3.3300 | ![]() |
4460 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220I-2 | SiC (Silicon Carbide) Schottky | TO-220I-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06008I2 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 36 µA @ 650 V | -55°C ~ 175°C | 21A | ||||||||||||||
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P3D06002G2 | 2.1000 | ![]() |
4224 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-263-2 | SiC (Silicon Carbide) Schottky | TO-263-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06002G2TR | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 10 µA @ 650 V | -55°C ~ 175°C | 7A | ||||||||||||||
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P3D06006I2 | 2.5000 | ![]() |
8790 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220I-2 | SiC (Silicon Carbide) Schottky | TO-220I-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06006I2 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 30 µA @ 650 V | -55°C ~ 175°C | 18A | ||||||||||||||
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P3M06060K4 | 10.3800 | ![]() |
7995 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | download | ROHS3 Compliant | REACH Affected | 4237-P3M06060K4 | 1 | N-Channel | 650 V | 48A | 15V | 79mOhm @ 20A, 15V | 2.4V @ 5mA (Typ) | +20V, -8V | - | 188W | |||||||||
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P3M06040K3 | 12.1700 | ![]() |
2030 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3L | download | ROHS3 Compliant | REACH Affected | 4237-P3M06040K3 | EAR99 | 8541.29.0095 | 1 | N-Channel | 650 V | 68A | 15V | 50mOhm @ 40A, 15V | 2.4V @ 7.5mA (Typ) | +20V, -8V | - | 254W | |||||||
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P3D06008T2 | 3.3300 | ![]() |
7218 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06008T2 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 36 µA @ 650 V | -55°C ~ 175°C | 26A | ||||||||||||||
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P3D06002E2 | 0.9100 | ![]() |
5306 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-252-2 | SiC (Silicon Carbide) Schottky | TO-252-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06002E2TR | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 10 µA @ 650 V | -55°C ~ 175°C | 9A | ||||||||||||||
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P3M06040K4 | 12.1700 | ![]() |
2233 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | download | ROHS3 Compliant | REACH Affected | 4237-P3M06040K4 | 1 | N-Channel | 650 V | 68A | 15V | 50mOhm @ 40A, 15V | 2.4V @ 7.5mA (Typ) | +20V, -8V | - | 254W | |||||||||
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P3D06020K3 | 8.8400 | ![]() |
2386 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247-3 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06020K3 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 44 µA @ 650 V | -55°C ~ 175°C | 82A | ||||||||||||||
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P3M171K0K3 | 6.1000 | ![]() |
5311 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3L | download | ROHS3 Compliant | REACH Affected | 4237-P3M171K0K3 | 1 | N-Channel | 1700 V | 6A | 15V | 1.4Ohm @ 2A, 15V | 2.2V @ 2mA (Typ) | +19V, -8V | - | 68W |
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