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Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | DataSheet | RoHS Status | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) |
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P3D12010T2 | 6.5400 | ![]() |
6876 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12010T2 | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 31A | ||||||||||||||||
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P3D06016GS | 7.7800 | ![]() |
9820 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-263S | SiC (Silicon Carbide) Schottky | TO-263S | download | ROHS3 Compliant | REACH Affected | 4237-P3D06016GSTR | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 45 µA @ 650 V | -55°C ~ 175°C | 40A | ||||||||||||||||
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P3M06120T3 | 9.0500 | ![]() |
8880 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-2 | SiCFET (Silicon Carbide) | TO-220-2L | download | ROHS3 Compliant | REACH Affected | 4237-P3M06120T3 | 1 | N-Channel | 650 V | 29A | 15V | 158mOhm @ 10A, 15V | 2.2V @ 5mA (Typ) | +20V, -8V | - | 153W | |||||||||||
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P3M12040G7 | 20.9800 | ![]() |
8324 | 0.00000000 | PN Junction Semiconductor | P3M | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | D2PAK-7 | download | ROHS3 Compliant | REACH Affected | 4237-P3M12040G7TR | 1 | N-Channel | 1200 V | 69A | 15V | 53mOhm @ 40A, 15V | 2.2V @ 40mA (Typ) | +19V, -8V | - | 357W | |||||||||||
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P3D12015T2 | 10.8700 | ![]() |
3041 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12015T2 | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 34A | ||||||||||||||||
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P3M173K0F3 | 5.0800 | ![]() |
8624 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220F-2 | SiCFET (Silicon Carbide) | TO-220F-2L | download | ROHS3 Compliant | REACH Affected | 4237-P3M173K0F3 | 1 | N-Channel | 1700 V | 1.97A | 15V | 3.6Ohm @ 0.25A, 15V | 2.2V @ 1.5mA (Typ) | +19V, -8V | - | 19W | |||||||||||
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P3M06060G7 | 10.3800 | ![]() |
7390 | 0.00000000 | PN Junction Semiconductor | P3M | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | D2PAK-7 | download | ROHS3 Compliant | REACH Affected | 4237-P3M06060G7TR | EAR99 | 8541.29.0095 | 1 | N-Channel | 650 V | 44A | 15V | 79mOhm @ 20A, 15V | 2.2V @ 20mA (Typ) | +20V, -8V | - | 159W | |||||||||
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P3M06025K4 | 15.9000 | ![]() |
5048 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | download | ROHS3 Compliant | REACH Affected | 4237-P3M06025K4 | 1 | N-Channel | 650 V | 97A | 15V | 34mOhm @ 50A, 15V | 2.2V @ 50mA (Typ) | +20V, -8V | - | 326W | |||||||||||
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P3M06060T3 | 10.3800 | ![]() |
8146 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-2 | SiCFET (Silicon Carbide) | TO-220-2L | download | ROHS3 Compliant | REACH Affected | 4237-P3M06060T3 | 1 | N-Channel | 650 V | 46A | 15V | 79mOhm @ 20A, 15V | 2.2V @ 20mA (Typ) | +20V, -8V | - | 170W | |||||||||||
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P3D12040K3 | 18.7200 | ![]() |
4655 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247-3 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12040K3 | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 60 µA @ 650 V | -55°C ~ 175°C | 92A | ||||||||||||||||
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P3D06010I2 | 4.1600 | ![]() |
8136 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220I-2 | SiC (Silicon Carbide) Schottky | TO-220I-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06010I2 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 44 µA @ 650 V | -55°C ~ 175°C | 26A | ||||||||||||||||
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P3M17040K3 | 35.8600 | ![]() |
3652 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3L | download | ROHS3 Compliant | REACH Affected | 4237-P3M17040K3 | 1 | N-Channel | 1700 V | 73A | 15V | 60mOhm @ 50A, 15V | 2.2V @ 50mA (Typ) | +19V, -8V | - | 536W | |||||||||||
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P3M06300K3 | 4.9800 | ![]() |
3261 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3L | download | ROHS3 Compliant | REACH Affected | 4237-P3M06300K3 | 1 | N-Channel | 650 V | 9A | 15V | 500mOhm @ 4.5A, 15V | 2.2V @ 5mA (Typ) | 904 nC @ 15 V | +20V, -8V | 338 pF @ 400 V | - | 38W | |||||||||
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P3D12040K2 | 18.7200 | ![]() |
1468 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12040K2 | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 70 µA @ 650 V | -55°C ~ 175°C | 93A | ||||||||||||||||
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P3D06010T2 | 4.1600 | ![]() |
7698 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06010T2 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 44 µA @ 650 V | -55°C ~ 175°C | 30A | ||||||||||||||||
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P3M12080K3 | 11.9000 | ![]() |
1973 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3L | download | ROHS3 Compliant | REACH Affected | 4237-P3M12080K3 | 1 | N-Channel | 1200 V | 47A | 15V | 96mOhm @ 20A, 15V | 2.4V @ 5mA (Typ) | +21V, -8V | - | 221W | |||||||||||
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P3M171K0T3 | 6.1000 | ![]() |
9441 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-2 | SiCFET (Silicon Carbide) | TO-220-2L | download | ROHS3 Compliant | REACH Affected | 4237-P3M171K0T3 | 1 | N-Channel | 1700 V | 6A | 15V | 1.4Ohm @ 2A, 15V | 2.2V @ 2mA (Typ) | +19V, -8V | - | 100W | |||||||||||
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P3D06016K3 | 7.7800 | ![]() |
2736 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247-3 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06016K3 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 36 µA @ 650 V | -55°C ~ 175°C | 64A | ||||||||||||||||
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P3D06006E2 | 2.5000 | ![]() |
4528 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-252-2 | SiC (Silicon Carbide) Schottky | TO-252-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06006E2TR | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 30 µA @ 650 V | -55°C ~ 175°C | 18A | ||||||||||||||||
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P3D12010K2 | 6.5400 | ![]() |
7474 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12010K2 | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 31A | ||||||||||||||||
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P3D12005T2 | 4.5000 | ![]() |
9356 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12005T2 | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 44 µA @ 650 V | -55°C ~ 175°C | 21A | ||||||||||||||||
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P3D12015K2 | 10.8700 | ![]() |
8920 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12015K2 | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 40A | ||||||||||||||||
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P3D12030K3 | 14.9200 | ![]() |
9128 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247-3 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12030K3 | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 94A | ||||||||||||||||
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P3M06300D5 | 4.9800 | ![]() |
4032 | 0.00000000 | PN Junction Semiconductor | P3M | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | DFN5*6 | SiCFET (Silicon Carbide) | DFN5*6 | download | ROHS3 Compliant | REACH Affected | 4237-P3M06300D5TR | 1 | N-Channel | 650 V | 9A | 15V | 500mOhm @ 4.5A, 15V | 2.2V @ 5mA | +20V, -8V | - | 26W | |||||||||||
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P3M06060L8 | 10.3800 | ![]() |
5762 | 0.00000000 | PN Junction Semiconductor | P3M | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | SiCFET (Silicon Carbide) | TOLL | download | ROHS3 Compliant | REACH Affected | 4237-P3M06060L8TR | 1 | N-Channel | 650 V | 40A | 15V | 79mOhm @ 20A, 15V | 2.4V @ 5mA (Typ) | +20V, -8V | - | 188W | ||||||||||||
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P3D06008G2 | 3.3300 | ![]() |
6822 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-263-2 | SiC (Silicon Carbide) Schottky | TO-263-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06008G2TR | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 36 µA @ 650 V | -55°C ~ 175°C | 26A | ||||||||||||||||
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P3D12010G2 | 6.5400 | ![]() |
7423 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-263-2 | SiC (Silicon Carbide) Schottky | TO-263-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12010G2TR | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 33A |
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