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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Tolerance | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Breakdown (V(BR)GSS) | Current - Drain (Idss) @ Vds (Vgs=0) | Voltage - Cutoff (VGS off) @ Id | Voltage - Zener (Nom) (Vz) | Impedance (Max) (Zzt) | Current Drain (Id) - Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TPC8031-H(TE12LQM) | - |  |
5858 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8031 | MOSFET (Metal Oxide) | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 11A (Ta) | 13.3mOhm @ 5.5A, 10V | 2.5V @ 1mA | 21 nC @ 10 V | 2150 pF @ 10 V | - | - | ||||||||||||||||||||||
 |
2SK880-BL(TE85L,F) | 0.5900 | |
14 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SK880 | 100 mW | SC-70 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 13pF @ 10V | 50 V | 6 mA @ 10 V | 1.5 V @ 100 nA | |||||||||||||||||||||||||
 |
TK16C60W,S1VQ | - | |
7901 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TK16C60 | MOSFET (Metal Oxide) | I2PAK | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 130W (Tc) | |||||||||||||||||||
 |
TP89R103NL,LQ | 0.6600 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | TP89R103 | MOSFET (Metal Oxide) | 8-SOP | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 15A (Tc) | 4.5V, 10V | 9.1mOhm @ 7.5A, 10V | 2.3V @ 100µA | 9.8 nC @ 10 V | ±20V | 820 pF @ 15 V | - | 1W (Tc) | |||||||||||||||||||
 |
2SK208-Y(TE85L,F) | 0.4900 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SK208 | 100 mW | S-Mini | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 8.2pF @ 10V | 50 V | 1.2 mA @ 10 V | 400 mV @ 100 nA | 6.5 mA | ||||||||||||||||||||||||
 |
TPW4R50ANH,L1Q | 2.7900 | |
3418 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerWDFN | TPW4R50 | MOSFET (Metal Oxide) | 8-DSOP Advance | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 100 V | 92A (Tc) | 10V | 4.5mOhm @ 46A, 10V | 4V @ 1mA | 58 nC @ 10 V | ±20V | 5200 pF @ 50 V | - | 800mW (Ta), 142W (Tc) | |||||||||||||||||||
 |
TK8Q65W,S1Q | 1.7200 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | TK8Q65 | MOSFET (Metal Oxide) | I-Pak | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 75 | N-Channel | 650 V | 7.8A (Ta) | 10V | 670mOhm @ 3.9A, 10V | 3.5V @ 300µA | 16 nC @ 10 V | ±30V | 570 pF @ 300 V | - | 80W (Tc) | |||||||||||||||||||
 |
SSM6N48FU,RF(D | - | |
1977 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SSM6N48 | MOSFET (Metal Oxide) | 300mW | US6 | download | 1 (Unlimited) | SSM6N48FURF(D | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 30V | 100mA (Ta) | 3.2Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 15.1pF @ 3V | Logic Level Gate, 2.5V Drive | |||||||||||||||||||||
 |
CBS05F30,L3F | 0.3900 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 2-SMD, No Lead | CBS05F30 | Schottky | CST2B | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 10,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 50 µA @ 30 V | 125°C (Max) | 500mA | 118pF @ 0V, 1MHz | |||||||||||||||||||||||||
 |
TPH7R006PL,L1Q | 0.8500 | |
22 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | 8-PowerVDFN | TPH7R006 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 60A (Tc) | 4.5V, 10V | 13.5mOhm @ 10A, 4.5V | 2.5V @ 200µA | 22 nC @ 10 V | ±20V | 1875 pF @ 30 V | - | 81W (Tc) | |||||||||||||||||||
 |
CMG03(TE12L,Q,M) | - | |
2511 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOD-128 | CMG03 | Standard | M-FLAT (2.4x3.8) | download | RoHS Compliant | 1 (Unlimited) | CMG03(TE12LQM) | EAR99 | 8541.10.0080 | 3,000 | Standard Recovery >500ns, > 200mA (Io) | 600 V | 1.1 V @ 2 A | 10 µA @ 600 V | -40°C ~ 150°C | 2A | - | |||||||||||||||||||||||
|
CMZ16(TE12L,Q,M) | 0.5400 | |
4384 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | ±10% | -40°C ~ 150°C (TJ) | Surface Mount | SOD-128 | CMZ16 | 2 W | M-FLAT (2.4x3.8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0050 | 3,000 | 1.2 V @ 200 mA | 10 µA @ 11 V | 16 V | 30 Ohms | |||||||||||||||||||||||||
|
CRZ39(TE85L,Q,M) | 0.4900 | |
7342 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | ±10% | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | CRZ39 | 700 mW | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0050 | 3,000 | 1 V @ 200 mA | 10 µA @ 31.2 V | 39 V | 35 Ohms | |||||||||||||||||||||||||
 |
CRZ47(TE85L,Q,M) | 0.4900 | |
4033 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | ±10% | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | CRZ47 | 700 mW | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0050 | 3,000 | 1 V @ 200 mA | 10 µA @ 37.6 V | 47 V | 65 Ohms | |||||||||||||||||||||||||
|
CUS10I30A(TE85L,QM | - | |
5115 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-76, SOD-323 | CUS10I30 | Schottky | US-FLAT (1.25x2.5) | download | RoHS Compliant | CUS10I30A(TE85LQM | EAR99 | 8541.10.0080 | 4,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 390 mV @ 700 mA | 60 µA @ 30 V | 150°C (Max) | 1A | 50pF @ 10V, 1MHz | ||||||||||||||||||||||||
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SSM3K35AMFV,L3F | 0.2300 | |
239 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-723 | SSM3K35 | MOSFET (Metal Oxide) | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | N-Channel | 20 V | 250mA (Ta) | 1.2V, 4.5V | 1.1Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34 nC @ 4.5 V | ±10V | 36 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||||
 |
TK4R4P06PL,RQ | 1.4500 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK4R4P06 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 60 V | 58A (Tc) | 4.5V, 10V | 4.4mOhm @ 29A, 10V | 2.5V @ 500µA | 48.2 nC @ 10 V | ±20V | 3280 pF @ 30 V | - | 87W (Tc) | |||||||||||||||||||
|
BAS316,H3F | 0.1800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-76, SOD-323 | BAS316 | Standard | USC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | 1.25 V @ 150 mA | 3 ns | 200 nA @ 80 V | 150°C (Max) | 250mA | 0.35pF @ 0V, 1MHz | |||||||||||||||||||||||
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TK16A45D(STA4,Q,M) | - | |
9568 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | - | Through Hole | TO-220-3 Full Pack | TK16A45 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 450 V | 16A | 270mOhm @ 8A, 10V | - | - | - | |||||||||||||||||||||||
|
TK6A45DA(STA4,Q,M) | 1.2500 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK6A45 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 450 V | 5.5A (Ta) | 10V | 1.35Ohm @ 2.8A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 490 pF @ 25 V | - | - | |||||||||||||||||||
|
TK7A45DA(STA4,Q,M) | 1.4000 | |
5114 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK7A45 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 450 V | 6.5A (Ta) | 10V | 1.2Ohm @ 3.3A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 540 pF @ 25 V | - | 35W (Tc) | |||||||||||||||||||
|
TK7A55D(STA4,Q,M) | 1.6000 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK7A55 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 550 V | 7A (Ta) | 10V | 1.25Ohm @ 3.5A, 10V | 4.4V @ 1mA | 16 nC @ 10 V | ±30V | 700 pF @ 25 V | - | 35W (Tc) | |||||||||||||||||||
 |
TK80S04K3L(T6L1,NQ | - | |
4801 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Obsolete | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK80S04 | MOSFET (Metal Oxide) | DPAK+ | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 40 V | 80A (Ta) | 6V, 10V | 3.1mOhm @ 40A, 10V | 3V @ 1mA | 87 nC @ 10 V | ±20V | 4340 pF @ 10 V | - | 100W (Tc) | |||||||||||||||||||
 |
TPC6008-H(TE85L,FM | - | |
7556 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TPC6008 | MOSFET (Metal Oxide) | VS-6 (2.9x2.8) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 5.9A (Ta) | 4.5V, 10V | 60mOhm @ 3A, 10V | 2.3V @ 100µA | 4.8 nC @ 10 V | ±20V | 300 pF @ 10 V | - | 700mW (Ta) | |||||||||||||||||||
|
TPC8062-H,LQ(CM | - | |
2139 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8062 | MOSFET (Metal Oxide) | 8-SOP | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 18A (Ta) | 4.5V, 10V | 5.8mOhm @ 9A, 10V | 2.3V @ 300µA | 34 nC @ 10 V | ±20V | 2900 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||
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TPC8A05-H(TE12L,QM | - | |
6243 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSV-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8A05 | MOSFET (Metal Oxide) | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 10A (Ta) | 4.5V, 10V | 13.3mOhm @ 5A, 10V | 2.3V @ 1mA | 15 nC @ 10 V | ±20V | 1700 pF @ 10 V | Schottky Diode (Body) | 1W (Ta) | ||||||||||||||||||||
 |
TK40E06N1,S1X | 1.0400 | |
9091 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK40E06 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 40A (Ta) | 10V | 10.4mOhm @ 20A, 10V | 4V @ 300µA | 23 nC @ 10 V | ±20V | 1700 pF @ 30 V | - | 67W (Tc) | |||||||||||||||||||
|
TK20A60U(Q,M) | - | |
5107 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSII | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK20A60 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 20A (Ta) | 10V | 190mOhm @ 10A, 10V | 5V @ 1mA | 27 nC @ 10 V | ±30V | 1470 pF @ 10 V | - | 45W (Tc) | |||||||||||||||||||
|
2SJ610(TE16L1,NQ) | - | |
7676 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2SJ610 | MOSFET (Metal Oxide) | PW-MOLD | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 250 V | 2A (Ta) | 10V | 2.55Ohm @ 1A, 10V | 3.5V @ 1mA | 24 nC @ 10 V | ±20V | 381 pF @ 10 V | - | 20W (Ta) | ||||||||||||||||||||
|
CRY91(TE85L,Q,M) | - | |
2201 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | ±10% | -40°C ~ 150°C | Surface Mount | SOD-123F | CRY91 | 700 mW | S-FLAT (1.6x3.5) | download | 1 (Unlimited) | EAR99 | 8541.10.0050 | 3,000 | 1 V @ 200 mA | 10 µA @ 5.5 V | 9.1 V | 30 Ohms |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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