Its remarkably low threshold voltage of 1 volt makes it a prime choice for low - power scenarios where minimizing power consumption is of utmost importance. Complemented by a low on - resistance of 7 ohms, the 2N7002HR excels in reducing power dissipation and boosting efficiency within high - speed switching circuits.
Housed in a compact SOT - 23 package, it's well - suited for surface mount applications across diverse industries. Moreover, as a MOSFET optimized for high - speed and low - voltage operations, it delivers outstanding performance in both analog and digital signal switching tasks.
Nexperia USA Inc. 2N7002HR's Features
- Low noise emission guaranteed
- Robust and reliable design
- Suitable for industrial use
- Achieves high performance levels
Nexperia USA Inc. 2N7002HR's Application
- Current sensor
- Touch sensor
- Load cell amplifier
- Speed controller
Nexperia USA Inc. 2N7002HR's Attributes
| Number of channelsv | 2 | Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) | 30 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) | 7 | Rail-to-rail | In to V+ |
| GBW (typ) (MHz) | 3 | Slew rate (typ) (V/µs) | 13 |
| Vos (offset voltage at 25°C) (max) (mV) | 3 | Iq per channel (typ) (mA) | 1.4 |
| Vn at 1 kHz (typ) (nV√Hz) | 18 | Rating | Catalog |
| Operating temperature range (°C) | 0 to 70 | Offset drift (typ) (µV/°C) | 18 |
| Features | Standard Amps | Input bias current (max) (pA) | 200 |
| CMRR (typ) (dB) | 100 | Iout (typ) (A) | 0.01 |
| Architecture | FET | Input common mode headroom (to negative supply) (typ) (V) | 3 |
| Input common mode headroom (to positive supply) (typ) (V) | 0 | Output swing headroom (to negative supply) (typ) (V) | 1.5 |
| Output swing headroom (to positive supply) (typ) (V) | -1.5 |
Nexperia USA Inc. 2N7002HR's Datasheet
2N7002BKW vs 2N7002HR
| Picture |  |  |
|---|---|---|
| Part number | 2N7002BKW | 2N7002HR |
| Manufacturer | Nexperia USA Inc. | Nexperia USA Inc. |
| Package | SC - 70,SOT - 323 | SOT23 - 3 |
| Description | 2N7002BKW N - channel MOSFET N - Channel 60 V 300mA (Tc) 830mW (Tc) Surface Mount TO - 236AB | N/A (not fully described in source text but a related part) |
| Stock | 9307 | 9240 |
| Type number | 2N7002BKW | 2N7002H |
| Package name | SC - 70 | SOT23 |
| Product status | Production | Production |
| Channel type | N | N |
| Nr of transistors | 1 | 1 |
| VDS [max] (V) | 60 | 60 |
| RDSon [max] @ VGS = 10 V (mΩ) | 1600 | 1600 |
| RDSon [max] @ VGS = 5 V (mΩ) | 2000 | 2000 |
| Tj [max] (°C) | 150 | 150 |
| ID [max] (A) | 0.31 | 0.36 |
| QGD [typ] (nC) | 0.1 | 0.1 |
| QG(tot) [typ] @ VGS = 4.5 V (nC) | 0.5 | 0.3 |
| Ptot [max] (W) | 0.275 | 0.34 |
| VGSth [typ] (V) | 1.6 | 1.75 |
| Automotive qualified | Y | Y |
| Ciss [typ] (pF) | 33 | 34 |
| Coss [typ] (pF) | 7 | 7 |
| Date | 2011 - 01 - 24 | 2021 - 12 - 01 |
| Orderable part number | 2N7002BKW,115 | 2N7002HR |
| Chemical content | 2N7002BKW | 2N7002H |
| VGS [max] (V) | 20 | 20 |
Nexperia USA Inc. 2N7002HR's Category-FETs, MOSFETs
Metal - Oxide - Semiconductor Field - Effect Transistors (MOSFETs for short) are a type of semiconductor commonly used in both digital and analog circuits, and they are also useful power devices. As an original compact transistor, MOSFETs are suitable for a wide range of electrical applications.
It has long been widely believed that many technological advancements in the 21st century would not have been possible without MOSFETs. MOSFETs are more widely used than Bipolar Junction Transistors (BJTs) because they require very little control current for the load current. The conductivity of an enhancement-mode MOSFET can be increased in the "normally off" state. The voltage applied through the gate can minimize the conductivity in the "normally on" state. The miniaturization process of MOSFETs is relatively simple, and they can be effectively reduced in size for compact applications.
Other advantages of MOSFETs include fast switching (especially for digital signals), minimum power consumption, and high-density capacitance, which make it an ideal choice for large-scale integration.
MOSFETs are the core components of integrated circuits. Thanks to their miniaturization, they can be designed and manufactured in a single chip. The MOSFETs on an integrated circuit chip are four - terminal elements, namely the source (S), the gate (G), the drain (D), and the body (B). The body is usually connected to the source, enabling the MOSFET to function as a field-effect transistor. There are mainly two types of transistors. One is the Bipolar Junction Transistor (BJT), and the other is the Field - Effect Transistor (FET). MOSFETs belong to the field-effect transistor type. BJTs are usually used for currents below 1 ampere; MOSFETs are typically used for applications with larger currents.
There are two types of MOSFETs: depletion - mode and enhancement - mode. The depletion-mode MOSFET works like a closed switch. A positive voltage generates an operating current, and a negative voltage stops the operating current. The enhancement mode MOSFET is a type commonly used in modern applications. As mentioned before, a MOSFET is a device used to switch or amplify electrical signals. These can be achieved by changing the conductivity, which can be changed by varying the applied voltage.
MOSFETs are the most commonly used transistors in digital circuits and can achieve million-level integration in memory chips or microprocessors. In addition, MOSFET transistors are commonly used as switches in voltage-controlled circuits. It is believed that the emergence of MOSFETs has contributed to the development of a series of technological devices, such as pocket calculators and digital wristwatches.
Hot-selling products of SIC
AUIRFS3004 IXFH30N40Q IXFH32N50Q IXFH88N20Q IXUN280N10 IXUV170N075
IXTH220N075T SI8413DB-T1-E1 SIA810DJ-T1-E3 SI4398DY-T1-E3 IRF9Z24NSTRLPBF IRFS3307TRLPBF
Product information is from SIC Electronics Limited. If you are interested in the product or require product parameters, you can contact us online at any time or send us an email: sales@sic-components.com.
Wishlist (0 Items) 