The IXYS IXFK94N50P2 is an N - channel enhancement - mode power MOSFET. It features a fast intrinsic diode, dynamic dv/dt rating, and avalanche rating. With a low RDS(ON)≤55mΩ and low QG, it reduces power losses. Its low - inductance package enhances performance. Ideal for switch - mode power supplies, DC - DC converters, and motor drives, it offers high power density and space savings.
IXYS IXFK94N50P2's Features
Fast Intrinsic Diode
This feature enables the device to respond rapidly in circuits, improving switching speed and reducing reverse recovery time. It is suitable for high-switching-speed applications such as high-frequency switching power supplies.
Dynamic dv/dt Rating
Indicates the device’s excellent capability to withstand voltage changes, ensuring stable operation in environments with rapid voltage fluctuations. This prevents malfunctions or damage caused by voltage transients, safeguarding circuit reliability.
Avalanche Rated
Means the device can withstand a certain amount of energy under avalanche breakdown conditions, enhancing reliability in extreme scenarios like overvoltage and reducing the risk of damage from avalanche breakdown.
Low RDS(ON) and QG
Low RDS(ON) reduces power loss during conduction, improving circuit efficiency.
Low QG minimizes the energy required to drive the device, lowering power consumption in the driver circuit and enhancing overall system energy efficiency.
Low Package Inductance
Reduces voltage spikes and electromagnetic interference (EMI) caused by inductance, improving circuit stability and noise immunity. This contributes to better circuit performance and reliability.
IXYS IXFK94N50P2's Applications
Switch-Mode and Resonant-Mode Power Supplies: In switch-mode power supplies (SMPS), its low on-resistance RDS(ON)≤55mΩ can reduce conduction losses and improve the power conversion efficiency. The fast intrinsic diode and high dv/dt rating can meet the requirements of high-frequency switching, reduce switching losses, and make the power output more stable. In resonant-mode power supplies, the device's characteristics help achieve soft switching, reducing switching noise and losses and improving the overall performance of the power supply.
DC-DC Converters: DC-DC converters often require efficient conversion of electrical energy. The device's low RDS(ON) and low gate charge QG characteristics can reduce power losses and improve the conversion efficiency. The fast switching speed enables it to adapt to high-frequency operation, reducing the size and weight of magnetic components and achieving the miniaturization of the converter.
Battery Chargers: During the battery charging process, precise control of current and voltage is required. This device can operate stably under high voltage and large current. The low on-resistance reduces the energy loss during the charging process, improves the charging efficiency, and shortens the charging time. The avalanche rating characteristic enhances the circuit reliability and protects the device from abnormal charging effects.
Uninterrupted Power Supplies (UPS): When the mains power fails, the UPS needs to quickly switch to battery power supply. The fast switching speed of this MOSFET can achieve rapid switching, ensuring that the load remains powered. The high power density and low package inductance characteristics ensure the stable operation of the UPS under complex working conditions, providing a reliable backup power supply for critical equipment.
AC and DC Motor Drives: When driving AC and DC motors, it is necessary to control large currents and voltages. The device's high current handling capabilities (ID25=94A, IDM=240A) meet the requirements for motor starting and operation. The low on-resistance reduces motor drive losses and improves the system efficiency. The avalanche rating and fast intrinsic diode characteristics protect the device from the back electromotive force of the motor.
High-Speed Power Switching Applications: In power circuits that require fast switching, such as high-frequency power amplifiers and pulse power supplies, its fast intrinsic diode and high dv/dt rating enable high-speed switching operations. The low gate charge reduces the power consumption of the drive circuit and improves the overall system performance.
IXYS IXFK94N50P2's Attributes
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Ihs Manufacturer | LITTELFUSE INC | Package Description | TO-264, 3 PIN |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| Samacsys Manufacturer | LITTELFUSE | Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 3500 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 500 V |
| Drain Current-Max (Abs) (ID) | 94 A | Drain Current-Max (ID) | 94 A |
| Drain-source On Resistance-Max | 0.055 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-264AA | JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e1 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 1300 W | Pulsed Drain Current-Max (IDM) | 240 A |
| Qualification Status | Not Qualified | Surface Mount | NO |
| Terminal Finish | TIN SILVER COPPER | Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 10 |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
| Manufacturer | IXYS | Product Category | MOSFET |
| RoHS | Details | Technology | Si |
| Mounting Style | Through Hole | Package / Case | TO-264-3 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 500 V | Id - Continuous Drain Current | 94 A |
| Rds On - Drain-Source Resistance | 55 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 228 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 1.3 kW | Channel Mode | Enhancement |
| Tradename | HiPerFET | Series | IXFK94N50 |
| Brand | IXYS | Product Type | MOSFET |
| Factory Pack Quantity | 25 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Type | PolarP2 HiPerFET |
| Unit Weight | 0.352740 oz |
IXYS IXFK94N50P2's Datasheet
IXYS IXFK94N50P2's Pinouts
TO - 264 Package Pin Information
- Pin 1: It is the Gate (abbreviated as G), which serves as the control terminal. By applying different voltages, it controls the on - off state of the MOSFET. Changing the gate voltage can adjust the conductivity of the channel, thereby controlling the magnitude of the current between the drain and the source.
- Pins 2 and 4: Both are the Drain (abbreviated as D). In a circuit, the drain is the current output terminal, connected to the load or other circuit components. It withstands high voltages and currents. In applications such as switching power supplies and motor drives, the magnitude of the drain current and voltage variations affect the circuit performance.
- Pin 3: It is the Source (abbreviated as S), which is the current input terminal. It is connected to the negative terminal of the power supply or the ground, providing a reference potential for the circuit to ensure the normal flow of current and realize the circuit function.
PLUS247 Package Pin Information
- Pin 1: It is the Gate (abbreviated as G), and its function is the same as that of the gate in the TO - 264 package, used to control the on - off state of the MOSFET.
- Pin 2: It is the Drain (abbreviated as D). As the current output terminal, it is connected to the load or other parts of the circuit and bears large currents and voltages in the circuit.
- Pin 3: It is the Source (abbreviated as S). As the current input terminal, it provides a low - potential reference point for the circuit to ensure the stable flow of current and maintain the normal operation of the circuit.
IXYS IXFK94N50P2's Category- Single FETs
Single FETs (Field-Effect Transistors) are crucial components in modern electronic circuits. Leveraging their unique voltage-controlled current characteristics, they play irreplaceable roles in various circuit applications. In signal amplification circuits, they accurately amplify weak electrical signals. In switching circuits, they enable rapid conduction and cutoff to control current flow. With their high input impedance, they minimally affect preceding circuits, effectively reducing signal distortion and enhancing circuit performance.
Different types of Single FETs, such as N-channel and P-channel, cater to diverse circuit requirements. N-channel FETs are widely used in positive power supply systems and efficiently handle large currents. The IXYS IXFK94N50P2 is an outstanding N-channel enhancement-mode power MOSFET. It features low on-resistance (RDS(ON)), significantly reducing conduction losses and improving circuit efficiency. Its fast intrinsic diode and high dv/dt rating ensure stable operation in high-frequency switching scenarios. Additionally, the avalanche-rated characteristic enhances reliability, making it excel in applications such as switching-mode power supplies and motor drives, providing a reliable component choice for numerous circuit designs.
IXFK94N50P2's Manufacturer- IXYS
IXYS has made remarkable achievements in the Single FETs domain. Their products, such as the IXFK94N50P2 and IXFX94N50P2 N - Channel Enhancement Mode Power MOSFETs, are prime examples. These devices feature a fast intrinsic diode, which enables quick switching, reducing power losses in high - frequency applications. Their avalanche - rated design enhances reliability under harsh conditions, protecting the FETs from voltage surges.
With a low RDS(ON) and QG, IXYS's Single FETs can efficiently control current flow, leading to higher power density and energy - saving performance. These characteristics make them ideal for a wide range of applications, including switch - mode and resonant - mode power supplies, DC - DC converters, and motor drives.
Moreover, IXYS holds numerous U.S. patents related to its MOSFETs and IGBTs, indicating its strong commitment to innovation. By continuously improving device performance and expanding application scenarios, IXYS has firmly established itself as a leading force in the Single FETs market.
Specification Comparison: IXFK94N50P2 vs IXFK90N60X vs IXFK90N20
| Picture |  |  |  |
| Part Number | IXFK94N50P2 +BOM | IXFK90N60X +BOM | IXFK90N20 +BOM |
|---|---|---|---|
| Manufacturer | Littelfuse | Littelfuse | IXYS Corporation |
| Package | TO-264-3 | TO-264-3 | TO264-3 |
| Description | N-Channel 500 V 94A (Tc) 1300W (Tc) Through Hole TO-264AA (IXFK) | MOSFET DiscMSFT NCh UltrJnctn XClass TO-264(3) | The product IXFK90N20 is a high-voltage MOSFET capable of handling 90 amps |
| Stock | 2432 | 2466 | 8979 |
| Drain-Source Voltage (V) | 500 | 600 | 200 |
| Maximum On-Resistance @ 25 ℃ (Ohm) | 0.055 | 0.038 | 0.02 |
| Continuous Drain Current @ 25 ℃ (A) | 94 | 90 | 90 |
| Gate Charge (nC) | 228 | 210 | 380 |
| Input Capacitance, CISS (pF) | 14200 | 8500 | 9000 |
| Thermal resistance [junction-case] (K/W) | 0.096 | 0.113 | 0.25 |
| Configuration | Single | Single | Single |
| Package Type | TO-264 | TO-264K | TO-264 |
| Power Dissipation (W) | 1300 | 1100 | 500 |
| Sample Request | No | No | Yes |
| Maximum Reverse Recovery (ns) | 250 | 200 | |
| Check Stock | Yes | Yes | |
| Typical Reverse Recovery Time (ns) | 210 |
Wishlist (0 Items) 