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Single FETs, MOSFETs(45591)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
R6024ENZC17 | 6.3700 |  |
300 | 0.00000000 | Rohm Semiconductor | - | Tube | Active | 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | R6024 | MOSFET (Metal Oxide) | TO-3PF | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 846-R6024ENZC17 | EAR99 | 8541.29.0095 | 30 | N-Channel | 600 V | 24A (Tc) | 10V | 165mOhm @ 11.3A, 10V | 4V @ 1mA | 70 nC @ 10 V | ±20V | 1650 pF @ 25 V | - | 120W (Tc) | |
 |
IMW65R048M1HXKSA1 | 16.1400 | |
1 | 0.00000000 | Infineon Technologies | CoolSIC™ M1 | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IMW65R048 | SiCFET (Silicon Carbide) | PG-TO247-3-41 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 39A (Tc) | 18V | 64mOhm @ 20.1A, 18V | 5.7V @ 6mA | 33 nC @ 18 V | +23V, -5V | 1118 pF @ 400 V | - | 125W (Tc) | ||
 |
FDS6680S | 0.5200 | |
42 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SOIC | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 11.5A (Ta) | 4.5V, 10V | 11mOhm @ 11.5A, 10V | 3V @ 250µA | 24 nC @ 5 V | ±20V | 2010 pF @ 15 V | - | 2.5W (Ta) | |||||
 |
FDU8878 | 0.3000 | |
41 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | I-PAK | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 75 | N-Channel | 30 V | 11A (Ta), 40A (Tc) | 4.5V, 10V | 15mOhm @ 35A, 10V | 2.5V @ 250µA | 26 nC @ 10 V | ±20V | 880 pF @ 15 V | - | 40W (Tc) | |||||
 |
FQPF3N80CYDTU | 0.6600 | |
1 | 0.00000000 | Fairchild Semiconductor | QFET® | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Formed Leads | MOSFET (Metal Oxide) | TO-220F-3 (Y-Forming) | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 50 | N-Channel | 800 V | 3A (Tc) | 10V | 4.8Ohm @ 1.5A, 10V | 5V @ 250µA | 16.5 nC @ 10 V | ±30V | 705 pF @ 25 V | - | 39W (Tc) | |||||
 |
FQAF16N25C | 0.9200 | |
360 | 0.00000000 | Fairchild Semiconductor | QFET® | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | MOSFET (Metal Oxide) | TO-3PF | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 360 | N-Channel | 250 V | 11.4A (Tc) | 10V | 270mOhm @ 5.7A, 10V | 4V @ 250µA | 53.5 nC @ 10 V | ±30V | 1080 pF @ 25 V | - | 73W (Tc) | |||||
 |
NTD65N03R-35G | 0.1400 | |
524 | 0.00000000 | onsemi | - | Tube | Obsolete | Through Hole | TO-251-3 Stub Leads, IPak | NTD65 | MOSFET (Metal Oxide) | I-Pak | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 75 | N-Channel | 25 V | 65A (Tc) | 8.4mOhm @ 30A, 10V | 2V @ 250µA | 16 nC @ 5 V | 1400 pF @ 20 V | - | |||||||
 |
IRFS4615PBF | 0.7100 | |
2582 | 0.00000000 | International Rectifier | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 59 | N-Channel | 150 V | 33A (Tc) | 10V | 42mOhm @ 21A, 10V | 5V @ 100µA | 40 nC @ 10 V | ±20V | 1750 pF @ 50 V | - | 144W (Tc) | |||||
|
R6030ENZM12C8 | - | |
1373 | 0.00000000 | Rohm Semiconductor | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | R6030 | MOSFET (Metal Oxide) | TO-3PF | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | 846-R6030ENZM12C8 | EAR99 | 8541.29.0095 | 30 | N-Channel | 600 V | 30A (Tc) | 10V | 130mOhm @ 14.5A, 10V | 4V @ 1mA | 85 nC @ 10 V | ±20V | 2100 pF @ 25 V | - | 120W (Tc) | |
|
R6530ENZC8 | - | |
7267 | 0.00000000 | Rohm Semiconductor | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | R6530 | MOSFET (Metal Oxide) | TO-3PF | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | 846-R6530ENZC8 | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 30A (Tc) | 10V | 140mOhm @ 14.5A, 10V | 4V @ 960µA | 90 nC @ 10 V | ±20V | 2100 pF @ 25 V | - | 86W (Tc) | |
 |
NTE2382 | 4.7900 | |
639 | 0.00000000 | NTE Electronics, Inc | - | Bag | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 2368-NTE2382 | EAR99 | 8541.29.0095 | 1 | N-Channel | 100 V | 9.2A (Tc) | 10V | 270mOhm @ 4.6A, 10V | 4V @ 250µA | 23 nC @ 10 V | ±20V | 400 pF @ 25 V | - | 50W (Tc) | ||||
 |
2N7002 | 0.2800 | |
27 | 0.00000000 | NTE Electronics, Inc | - | Bag | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2N7002 | MOSFET (Metal Oxide) | SOT-23-3 | download | RoHS non-compliant | 2368-2N7002 | EAR99 | 8541.21.0095 | 1 | N-Channel | 60 V | 115mA (Ta) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | ±20V | 50 pF @ 25 V | - | 200mW (Ta) | ||||
 |
AO4447AL_104 | - | |
3153 | 0.00000000 | Alpha & Omega Semiconductor Inc. | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | AO44 | MOSFET (Metal Oxide) | 8-SOIC | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 785-AO4447AL_104TR | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 18.5A (Ta) | 4.5V, 10V | 5.8mOhm @ 18.5A, 10V | 2.2V @ 250µA | 130 nC @ 10 V | ±20V | 5020 pF @ 15 V | - | 3.1W (Ta) | |
 |
BUK7510-55AL127 | 1.0200 | |
4 | 0.00000000 | NXP USA Inc. | TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | BUK7510 | MOSFET (Metal Oxide) | TO-220AB | download | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.29.0095 | 1 | N-Channel | 55 V | 75A (Tc) | 10V | 10mOhm @ 25A, 10V | 4V @ 1mA | 124 nC @ 10 V | ±20V | 6280 pF @ 25 V | - | 300W (Tc) | ||
 |
BUK7907-55ATE127 | 1.0000 | |
4695 | 0.00000000 | Nexperia USA Inc. | Automotive, AEC-Q101, TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | MOSFET (Metal Oxide) | TO-220-5 | download | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.29.0095 | 1 | N-Channel | 55 V | 75A (Tc) | 10V | 7mOhm @ 50A, 10V | 4V @ 1mA | 116 nC @ 10 V | ±20V | 4500 pF @ 25 V | Temperature Sensing Diode | 272W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
Wishlist (0 Items) 