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Single FETs, MOSFETs(44971)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPB017N08N5ATMA1 | 6.8200 |  |
483 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IPB017 | MOSFET (Metal Oxide) | PG-TO263-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 80 V | 120A (Tc) | 6V, 10V | 1.7mOhm @ 100A, 10V | 3.8V @ 280µA | 223 nC @ 10 V | ±20V | 16900 pF @ 40 V | - | 375W (Tc) | ||
 |
IPD060N03LGBTMA1 | 0.3409 | |
3530 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tape & Reel (TR) | Not For New Designs | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IPD060 | MOSFET (Metal Oxide) | PG-TO252-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | SP000236948 | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 50A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 2.2V @ 250µA | 30 nC @ 10 V | ±20V | 2300 pF @ 15 V | - | 56W (Tc) | |
 |
TK4A53D(STA4,Q,M) | - | |
7821 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK4A53 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 525 V | 4A (Ta) | 10V | 1.7Ohm @ 2A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 490 pF @ 25 V | - | 35W (Tc) | |||
 |
NDS352P | 0.3000 | |
29 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | SOT-23-3 | download | ROHS3 Compliant | EAR99 | 8541.21.0095 | 987 | P-Channel | 20 V | 850mA (Ta) | 4.5V, 10V | 350mOhm @ 1A, 10V | 2.5V @ 250µA | 4 nC @ 5 V | ±12V | 125 pF @ 10 V | - | 500mW (Ta) | |||||
 |
STS4DNFS30L | - | |
1290 | 0.00000000 | STMicroelectronics | STripFET™ | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | STS4D | MOSFET (Metal Oxide) | 8-SOIC | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 4A (Tc) | 5V, 10V | 55mOhm @ 2A, 10V | 1V @ 250µA | 9 nC @ 5 V | ±16V | 330 pF @ 25 V | Schottky Diode (Isolated) | 2W (Tc) | ||
 |
SI7309DN-T1-GE3 | 1.0400 | |
4 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | SI7309 | MOSFET (Metal Oxide) | PowerPAK® 1212-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 60 V | 8A (Tc) | 4.5V, 10V | 115mOhm @ 3.9A, 10V | 3V @ 250µA | 22 nC @ 10 V | ±20V | 600 pF @ 30 V | - | 3.2W (Ta), 19.8W (Tc) | |||
 |
BUK9Y41-80E,115 | 0.8400 | |
8991 | 0.00000000 | Nexperia USA Inc. | Automotive, AEC-Q101, TrenchMOS™ | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | BUK9Y41 | MOSFET (Metal Oxide) | LFPAK56, Power-SO8 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 80 V | 24A (Tc) | 5V, 10V | 41mOhm @ 5A, 10V | 2.1V @ 1mA | 11.9 nC @ 5 V | ±10V | 1570 pF @ 25 V | - | 64W (Tc) | ||
 |
IXTP48N20TM | 3.0954 | |
8960 | 0.00000000 | IXYS | Trench | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | IXTP48 | MOSFET (Metal Oxide) | TO-220 Isolated Tab | - | ROHS3 Compliant | REACH Unaffected | 238-IXTP48N20TM | EAR99 | 8541.29.0095 | 50 | N-Channel | 200 V | 48A (Tc) | 10V | 50mOhm @ 24A, 10V | 4.5V @ 250µA | 60 nC @ 10 V | ±30V | 3090 pF @ 25 V | - | 250W (Tc) | ||
 |
STD6N90K5 | 2.6900 | |
3471 | 0.00000000 | STMicroelectronics | MDmesh™ K5 | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | STD6N90 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 497-17072-2 | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 900 V | 6A (Tc) | 10V | 1.1Ohm @ 3A, 10V | 5V @ 100µA | ±30V | - | 110W (Tc) | |||
 |
FDB2570 | - | |
7548 | 0.00000000 | onsemi | PowerTrench® | Tape & Reel (TR) | Obsolete | -65°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | FDB257 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | N-Channel | 150 V | 22A (Ta) | 6V, 10V | 80mOhm @ 11A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±20V | 1911 pF @ 75 V | - | 93W (Tc) | |||
 |
IRLB3813PBF | 1.8700 | |
6 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | IRLB3813 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 30 V | 260A (Tc) | 4.5V, 10V | 1.95mOhm @ 60A, 10V | 2.35V @ 150µA | 86 nC @ 4.5 V | ±20V | 8420 pF @ 15 V | - | 230W (Tc) | ||
 |
BUK753R8-80E,127 | - | |
7891 | 0.00000000 | Nexperia USA Inc. | Automotive, AEC-Q101, TrenchMOS™ | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 80 V | 120A (Tc) | 10V | 4mOhm @ 25A, 10V | 4V @ 1mA | 169 nC @ 10 V | ±20V | 12030 pF @ 25 V | - | 349W (Tc) | |||
 |
TPH3206PSB | 9.8100 | |
1 | 0.00000000 | Transphorm | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TPH3206 | GaNFET (Gallium Nitride) | TO-220AB | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 16A (Tc) | 10V | 180mOhm @ 10A, 8V | 2.6V @ 500µA | 6.2 nC @ 4.5 V | ±18V | 720 pF @ 480 V | - | 81W (Tc) | ||||
 |
TK10P60W,RVQ | 3.0400 | |
11 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK10P60 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 600 V | 9.7A (Ta) | 10V | 430mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | - | 80W (Tc) | |||
|
AUIRF7484QTR | - | |
5539 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SO | - | Not applicable | 1 (Unlimited) | REACH Unaffected | EAR99 | 0000.00.0000 | 4,000 | N-Channel | 40 V | 14A (Ta) | 7V | 10mOhm @ 14A, 7V | 2V @ 250µA | 100 nC @ 7 V | ±8V | 3520 pF @ 25 V | - | 2.5W (Ta) | |||
 |
IRF820APBF | 1.7300 | |
4 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | IRF820 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | *IRF820APBF | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 2.5A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4.5V @ 250µA | 17 nC @ 10 V | ±30V | 340 pF @ 25 V | - | 50W (Tc) | ||
 |
IRF7456TRPBF | - | |
9277 | 0.00000000 | Infineon Technologies | HEXFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | IRF7456 | MOSFET (Metal Oxide) | 8-SO | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 4,000 | N-Channel | 20 V | 16A (Ta) | 2.8V, 10V | 6.5mOhm @ 16A, 10V | 2V @ 250µA | 62 nC @ 5 V | ±12V | 3640 pF @ 15 V | - | 2.5W (Ta) | ||
 |
SI3474DV-T1-GE3 | 0.4400 | |
5694 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SI3474 | MOSFET (Metal Oxide) | 6-TSOP | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 100 V | 3.8A (Tc) | 4.5V, 10V | 126mOhm @ 2A, 10V | 3V @ 250µA | 10.4 nC @ 10 V | ±20V | 196 pF @ 50 V | - | 3.6W (Tc) | |||
 |
BSZ900N20NS3GATMA1 | 2.1700 | |
818 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | BSZ900 | MOSFET (Metal Oxide) | PG-TSDSON-8 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 200 V | 15.2A (Tc) | 10V | 90mOhm @ 7.6A, 10V | 4V @ 30µA | 11.6 nC @ 10 V | ±20V | 920 pF @ 100 V | - | 62.5W (Tc) | ||
 |
TK60S10N1L,LXHQ | 1.5800 | |
1308 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK60S10 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 100 V | 60A (Ta) | 6V, 10V | 6.11mOhm @ 30A, 10V | 3.5V @ 500µA | 60 nC @ 10 V | ±20V | 4320 pF @ 10 V | - | 180W (Tc) | ||||
 |
RJK005N03FRAT146 | 0.3900 | |
1 | 0.00000000 | Rohm Semiconductor | Automotive, AEC-Q101 | Tape & Reel (TR) | Not For New Designs | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RJK005 | MOSFET (Metal Oxide) | SMT3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 500mA (Ta) | 2.5V, 4.5V | 580mOhm @ 500mA, 4.5V | 1.5V @ 1mA | 4 nC @ 4 V | ±12V | 60 pF @ 10 V | - | 200mW (Ta) | ||
|
IRL8114PBF | - | |
8857 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | IRL8114 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 30 V | 90A (Tc) | 4.5V, 10V | 4.5mOhm @ 40A, 10V | 2.25V @ 250µA | 29 nC @ 4.5 V | ±20V | 2660 pF @ 15 V | - | 115W (Tc) | ||
 |
FQU8N25TU | 0.6400 | |
5 | 0.00000000 | Fairchild Semiconductor | QFET® | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | I-PAK | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 70 | N-Channel | 250 V | 6.2A (Tc) | 10V | 550mOhm @ 3.1A, 10V | 5V @ 250µA | 15 nC @ 10 V | ±30V | 530 pF @ 25 V | - | 2.5W (Ta), 50W (Tc) | |||||
 |
FDFS6N303 | 0.2900 | |
86 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SOIC | download | ROHS3 Compliant | EAR99 | 8541.21.0095 | 2,500 | N-Channel | 30 V | 6A (Ta) | 4.5V, 10V | 35mOhm @ 6A, 10V | 3V @ 250µA | 17 nC @ 10 V | ±20V | 350 pF @ 15 V | Schottky Diode (Isolated) | 900mW (Ta) | |||||
 |
2N7002KCX | 0.0310 | |
300 | 0.00000000 | Yangjie Technology | - | Tape & Reel (TR) | Active | 2N7002 | download | RoHS Compliant | REACH Unaffected | 4617-2N7002KCXTR | EAR99 | 3,000 | |||||||||||||||||||
 |
R6520ENZ4C13 | 5.7900 | |
1 | 0.00000000 | Rohm Semiconductor | - | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | R6520 | MOSFET (Metal Oxide) | TO-247G | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 846-R6520ENZ4C13 | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 20A (Tc) | 10V | 205mOhm @ 9.5A, 10V | 4V @ 630µA | 61 nC @ 10 V | ±20V | 1400 pF @ 25 V | - | 231W (Tc) | |
 |
SPN01N60C3 | - | |
5670 | 0.00000000 | Infineon Technologies | CoolMOS™ | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SPN01N | MOSFET (Metal Oxide) | PG-SOT223-4 | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 650 V | 300mA (Ta) | 10V | 6Ohm @ 500mA, 10V | 3.7V @ 250µA | 5 nC @ 10 V | ±20V | 100 pF @ 25 V | - | 1.8W (Ta) | ||
 |
STI30N65M5 | 6.4400 | |
993 | 0.00000000 | STMicroelectronics | MDmesh™ V | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | STI30N | MOSFET (Metal Oxide) | I2PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 22A (Tc) | 10V | 139mOhm @ 11A, 10V | 5V @ 250µA | 64 nC @ 10 V | ±25V | 2880 pF @ 100 V | - | 140W (Tc) | ||
|
IRF1405STRR | - | |
7863 | 0.00000000 | Infineon Technologies | HEXFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | SP001564256 | EAR99 | 8541.29.0095 | 800 | N-Channel | 55 V | 131A (Tc) | 10V | 5.3mOhm @ 101A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 5480 pF @ 25 V | - | 200W (Tc) | ||
 |
SIHH14N65E-T1-GE3 | 5.2700 | |
3557 | 0.00000000 | Vishay Siliconix | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | SIHH14 | MOSFET (Metal Oxide) | PowerPAK® 8 x 8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 650 V | 15A (Tc) | 10V | 260mOhm @ 7A, 10V | 4V @ 250µA | 96 nC @ 10 V | ±30V | 1712 pF @ 100 V | - | 156W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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