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Single FETs, MOSFETs(44971)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SIA444DJT-T4-GE3 | - |  |
1183 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 | SIA444 | MOSFET (Metal Oxide) | PowerPAK® SC-70-6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 11A (Ta), 12A (Tc) | 4.5V, 10V | 17mOhm @ 7.4A, 10V | 2.2V @ 250µA | 15 nC @ 10 V | ±20V | 560 pF @ 15 V | - | 3.5W (Ta), 19W (Tc) | |||
|
SIA462DJ-T4-GE3 | - | |
6987 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 | SIA462 | MOSFET (Metal Oxide) | PowerPAK® SC-70-6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 12A (Ta), 12A (Tc) | 4.5V, 10V | 18mOhm @ 9A, 10V | 2.4V @ 250µA | 17 nC @ 10 V | ±20V | 570 pF @ 15 V | - | 3.5W (Ta), 19W (Tc) | |||
 |
SISS22DN-T1-GE3 | 1.5500 | |
5 | 0.00000000 | Vishay Siliconix | TrenchFET® Gen IV | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | SISS22 | MOSFET (Metal Oxide) | PowerPAK® 1212-8S | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 25A (Ta), 90.6A (Tc) | 7.5V, 10V | 4mOhm @ 15A, 10V | 3.6V @ 250µA | 44 nC @ 10 V | ±20V | 1870 pF @ 30 V | - | 5W (Ta), 65.7W (Tc) | |||
 |
SIR122DP-T1-RE3 | 0.9800 | |
725 | 0.00000000 | Vishay Siliconix | TrenchFET® Gen IV | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | SIR122 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 80 V | 16.7A (Ta), 59.6A (Tc) | 7.5V, 10V | 7.4mOhm @ 10A, 10V | 3.8V @ 250µA | 44 nC @ 10 V | ±20V | 1950 pF @ 40 V | - | 5.2W (Ta), 65.7W (Tc) | |||
 |
SIHB35N60EF-GE3 | 6.4600 | |
12 | 0.00000000 | Vishay Siliconix | EF | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIHB35 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 32A (Tc) | 10V | 97mOhm @ 17A, 10V | 4V @ 250µA | 134 nC @ 10 V | ±30V | 2568 pF @ 100 V | - | 250W (Tc) | |||
 |
TSM9ND50CI | 3.3700 | |
3 | 0.00000000 | Taiwan Semiconductor Corporation | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TSM9 | MOSFET (Metal Oxide) | ITO-220 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 9A (Tc) | 10V | 900mOhm @ 2.3A, 10V | 3.8V @ 250µA | 24.5 nC @ 10 V | ±30V | 1116 pF @ 50 V | - | 50W (Tc) | ||
 |
STF33N60M6 | 4.9500 | |
1243 | 0.00000000 | STMicroelectronics | MDmesh™ M6 | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | STF33 | MOSFET (Metal Oxide) | TO-220FP | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 497-18247 | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 600 V | 25A (Tc) | 10V | 125mOhm @ 12.5A, 10V | 4.75V @ 250µA | 33.4 nC @ 10 V | ±25V | 1515 pF @ 100 V | - | 35W (Tc) | |
 |
CSD25310Q2T | 1.1600 | |
22 | 0.00000000 | Texas Instruments | NexFET™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | CSD25310Q2 | MOSFET (Metal Oxide) | 6-WSON (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 250 | P-Channel | 20 V | 20A (Ta) | 1.8V, 4.5V | 23.9mOhm @ 5A, 4.5V | 1.1V @ 250µA | 4.7 nC @ 4.5 V | ±8V | 655 pF @ 10 V | - | 2.9W (Ta) | ||
 |
R6003KND3TL1 | 1.6800 | |
117 | 0.00000000 | Rohm Semiconductor | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | R6003 | MOSFET (Metal Oxide) | TO-252 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 600 V | 3A (Tc) | 10V | 1.5Ohm @ 1A, 10V | 5.5V @ 1mA | 8 nC @ 10 V | ±20V | 185 pF @ 25 V | - | 44W (Tc) | ||
 |
SIJ188DP-T1-GE3 | 1.5600 | |
5 | 0.00000000 | Vishay Siliconix | TrenchFET® Gen IV | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | SIJ188 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 25.5A (Ta), 92.4A (Tc) | 7.5V, 10V | 3.85mOhm @ 10A, 10V | 3.6V @ 250µA | 44 nC @ 10 V | ±20V | 1920 pF @ 30 V | - | 5W (Ta), 65.7W (Tc) | |||
|
SIR626LDP-T1-RE3 | 1.8000 | |
3581 | 0.00000000 | Vishay Siliconix | TrenchFET® Gen IV | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | SIR626 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 45.6A (Ta), 186A (Tc) | 4.5V, 10V | 1.5mOhm @ 20A, 10V | 2.5V @ 250µA | 135 nC @ 10 V | ±20V | 5900 pF @ 30 V | - | 6.25W (Ta), 104W (Tc) | |||
|
SISS30DN-T1-GE3 | 1.1400 | |
6 | 0.00000000 | Vishay Siliconix | TrenchFET® Gen IV | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | SISS30 | MOSFET (Metal Oxide) | PowerPAK® 1212-8S | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 80 V | 15.9A (Ta), 54.7A (Tc) | 7.5V, 10V | 8.25mOhm @ 10A, 10V | 3.8V @ 250µA | 40 nC @ 10 V | ±20V | 1666 pF @ 10 V | - | 4.8W (Ta), 57W (Tc) | |||
|
RD3P130SPFRATL | 1.9100 | |
2 | 0.00000000 | Rohm Semiconductor | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | RD3P130 | MOSFET (Metal Oxide) | TO-252 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 100 V | 13A (Ta) | 4V, 10V | 200mOhm @ 6.5A, 10V | 2.5V @ 1mA | 40 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 20W (Tc) | ||
 |
STW75N60DM6 | 13.7100 | |
375 | 0.00000000 | STMicroelectronics | MDmesh™ DM6 | Tube | Active | - | Through Hole | TO-247-3 | STW75 | MOSFET (Metal Oxide) | TO-247-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 600 | N-Channel | 600 V | 72A (Tc) | - | - | - | ±25V | - | - | ||||
 |
BSM600C12P3G201 | 1.0000 | |
7927 | 0.00000000 | Rohm Semiconductor | - | Tray | Active | 175°C (TJ) | Chassis Mount | Module | BSM600 | SiCFET (Silicon Carbide) | Module | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 4 | N-Channel | 1200 V | 600A (Tc) | - | - | 5.6V @ 182mA | +22V, -4V | 28000 pF @ 10 V | - | 2460W (Tc) | |||
 |
IPD50R280CEAUMA1 | 1.7600 | |
3 | 0.00000000 | Infineon Technologies | CoolMOS™ CE | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IPD50R | MOSFET (Metal Oxide) | PG-TO252-3 | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 500 V | 13A (Ta) | 13V | 280mOhm @ 4.2A, 13V | 3.5V @ 350µA | 32.6 nC @ 10 V | ±20V | 773 pF @ 100 V | - | 119W (Tc) | ||
|
IPD60R1K5CEAUMA1 | 0.7200 | |
18 | 0.00000000 | Infineon Technologies | CoolMOS™ CE | Tape & Reel (TR) | Active | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IPD60R | MOSFET (Metal Oxide) | PG-TO252-3 | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 600 V | 5A (Tc) | 10V | 1.5Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4 nC @ 10 V | ±20V | 200 pF @ 100 V | - | 49W (Tc) | ||
 |
IPN50R3K0CEATMA1 | 0.5000 | |
2062 | 0.00000000 | Infineon Technologies | CoolMOS™ CE | Tape & Reel (TR) | Not For New Designs | -40°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | IPN50R3 | MOSFET (Metal Oxide) | PG-SOT223-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 500 V | 2.6A (Tc) | 13V | 3Ohm @ 400mA, 13V | 3.5V @ 30µA | 4.3 nC @ 10 V | ±20V | 84 pF @ 100 V | - | 5W (Tc) | ||
 |
IPU60R3K4CEAKMA1 | - | |
3149 | 0.00000000 | Infineon Technologies | CoolMOS™ CE | Tube | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPU60R | MOSFET (Metal Oxide) | PG-TO251-3 | download | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 600 V | 2.6A (Tj) | 10V | 3.4Ohm @ 500mA, 10V | 3.5V @ 40µA | 4.6 nC @ 10 V | ±20V | 93 pF @ 100 V | - | - | |||
 |
IPI50R350CPXKSA1 | - | |
7407 | 0.00000000 | Infineon Technologies | CoolMOS™ | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | IPI50R350 | MOSFET (Metal Oxide) | PG-TO262-3-1 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | SP000680736 | EAR99 | 8541.29.0095 | 500 | N-Channel | 500 V | 10A (Tc) | 10V | 350mOhm @ 5.6A, 10V | 3.5V @ 370µA | 25 nC @ 10 V | ±20V | 1020 pF @ 100 V | - | 89W (Tc) | |
 |
IPP50R250CPXKSA1 | 1.8880 | |
4408 | 0.00000000 | Infineon Technologies | CoolMOS™ | Tube | Not For New Designs | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | IPP50R250 | MOSFET (Metal Oxide) | PG-TO220-3-1 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 500 | N-Channel | 500 V | 13A (Tc) | 10V | 250mOhm @ 7.8A, 10V | 3.5V @ 520µA | 36 nC @ 10 V | ±20V | 1420 pF @ 100 V | - | 114W (Tc) | ||
|
SPD02N50C3BTMA1 | - | |
5255 | 0.00000000 | Infineon Technologies | CoolMOS™ | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SPD02N | MOSFET (Metal Oxide) | PG-TO252-3-311 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 500 V | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 3.9V @ 80µA | 9 nC @ 10 V | ±20V | 190 pF @ 25 V | - | 25W (Tc) | |||
|
SPD04N60C3ATMA1 | 1.9900 | |
9264 | 0.00000000 | Infineon Technologies | CoolMOS™ | Tape & Reel (TR) | Not For New Designs | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SPD04N60 | MOSFET (Metal Oxide) | PG-TO252-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 600 V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 25 nC @ 10 V | ±20V | 490 pF @ 25 V | - | 50W (Tc) | ||
 |
IPD70N12S3L12ATMA1 | - | |
2365 | 0.00000000 | Infineon Technologies | Automotive, AEC-Q101, OptiMOS™ | Tape & Reel (TR) | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IPD70 | MOSFET (Metal Oxide) | PG-TO252-3-11 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 120 V | 70A (Tc) | 4.5V, 10V | 11.5mOhm @ 70A, 10V | 2.4V @ 83µA | 77 nC @ 10 V | ±20V | 5550 pF @ 25 V | - | 125W (Tc) | ||
 |
IPB044N15N5ATMA1 | 8.8000 | |
11 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | IPB044 | MOSFET (Metal Oxide) | PG-TO263-7 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 150 V | 174A (Tc) | 8V, 10V | 4.4mOhm @ 87A, 10V | 4.6V @ 264µA | 100 nC @ 10 V | ±20V | 8000 pF @ 75 V | - | 300W (Tc) | ||
 |
IPP04CN10NGXKSA1 | 3.7441 | |
5687 | 0.00000000 | Infineon Technologies | OptiMOS™ 2 | Tube | Not For New Designs | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | IPP04CN10 | MOSFET (Metal Oxide) | PG-TO220-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 500 | N-Channel | 100 V | 100A (Tc) | 10V | 4.2mOhm @ 100A, 10V | 4V @ 250µA | 210 nC @ 10 V | ±20V | 13800 pF @ 50 V | - | 300W (Tc) | ||
 |
2SK2962,T6WNLF(M | - | |
5951 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-226-3, TO-92-3 Long Body | 2SK2962 | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 1A (Tj) | ||||||||||||||||
|
2SK2989(T6CANO,A,F | - | |
8088 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-226-3, TO-92-3 Long Body | 2SK2989 | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 5A (Tj) | ||||||||||||||||
|
2SK2989,T6F(J | - | |
7347 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-226-3, TO-92-3 Long Body | 2SK2989 | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 5A (Tj) | ||||||||||||||||
 |
TK7E80W,S1X | 2.8500 | |
8245 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C | Through Hole | TO-220-3 | TK7E80 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 800 V | 6.5A (Ta) | 10V | 950mOhm @ 3.3A, 10V | 4V @ 280µA | 13 nC @ 10 V | ±20V | 700 pF @ 300 V | - | 110W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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