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Single FETs, MOSFETs(44971)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NP45N06VDK-E1-AY | 1.2500 |  |
2 | 0.00000000 | Renesas Electronics America Inc | - | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | NP45N06 | MOSFET (Metal Oxide) | TO-252 (MP-3ZP) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 60 V | 45A (Tc) | 4.5V, 10V | 11.6mOhm @ 23A, 10V | 2.5V @ 250µA | 38 nC @ 10 V | ±20V | 2300 pF @ 25 V | - | 1.2W (Ta), 75W (Tc) | ||
 |
IRLR3410PBF | - | |
8585 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | D-Pak | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 0000.00.0000 | 1 | N-Channel | 100 V | 17A (Tc) | 4V, 10V | 105mOhm @ 10A, 10V | 2V @ 250µA | 34 nC @ 5 V | ±16V | 800 pF @ 25 V | - | 79W (Tc) | |||
 |
PH3120L,115-NXP | - | |
3809 | 0.00000000 | NXP USA Inc. | TrenchMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | SC-100, SOT-669 | MOSFET (Metal Oxide) | LFPAK56, Power-SO8 | - | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | EAR99 | 0000.00.0000 | 1,500 | N-Channel | 20 V | 100A (Tc) | 4.5V, 10V | 2.65mOhm @ 25A, 10V | 2V @ 1mA | 48.5 nC @ 4.5 V | ±20V | 4457 pF @ 10 V | - | 62.5W (Tc) | |||
 |
IRFR13N20DPBF-IR | - | |
3841 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | - | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | EAR99 | 0000.00.0000 | 1 | N-Channel | 200 V | 13A (Tc) | 235mOhm @ 8A, 10V | 5.5V @ 250µA | 38 nC @ 10 V | ±30V | 830 pF @ 25 V | - | 110W (Tc) | ||||
 |
AUIRFP064N-IR | - | |
1047 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247AC | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 0000.00.0000 | 1 | N-Channel | 55 V | 110A (Tc) | 10V | 8mOhm @ 59A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 200W (Tc) | |||
|
AUIRF6218S-IR | - | |
6333 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | PG-TO263-3 | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 0000.00.0000 | 1 | P-Channel | 150 V | 27A (Tc) | 10V | 150mOhm @ 16A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 2210 pF @ 25 V | - | 250W (Tc) | |||
 |
PHP45NQ11T,127 | 0.4100 | |
11 | 0.00000000 | NXP USA Inc. | * | Tube | Active | PHP45 | download | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | |||||||||||||||||||
 |
RJK0331DPB-01#J0 | 1.0000 | |
7253 | 0.00000000 | Renesas Electronics America Inc | - | Bulk | Active | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | MOSFET (Metal Oxide) | LFPAK | - | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.29.0095 | 1 | N-Channel | 30 V | 40A (Ta) | 3.4mOhm @ 20A, 10V | - | 22 nC @ 4.5 V | 3380 pF @ 10 V | - | 50W (Tc) | |||||
|
BUK6E2R3-40C,127 | - | |
7460 | 0.00000000 | NXP USA Inc. | * | Tube | Active | BUK6 | - | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | |||||||||||||||||||
 |
FS30AS-2-T13#B00 | 0.9700 | |
9 | 0.00000000 | Renesas Electronics America Inc | - | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | MP-3A | download | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8542.39.0001 | 3,000 | N-Channel | 100 V | 30A (Tc) | 100mOhm @ 15A, 10V | 4V @ 1mA | 1250 pF @ 10 V | - | 35W (Tc) | ||||||
|
BUK7508-55A,127 | - | |
6763 | 0.00000000 | NXP USA Inc. | Automotive, AEC-Q101, TrenchMOS™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 0000.00.0000 | 1 | N-Channel | 55 V | 75A (Ta) | 8mOhm @ 25A, 10V | 4V @ 1mA | 76 nC @ 0 V | ±20V | 4352 pF @ 25 V | - | 254W (Ta) | ||||
|
IRFD220 | 0.5200 | |
913 | 0.00000000 | Harris Corporation | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | IRFD220 | MOSFET (Metal Oxide) | 4-DIP, Hexdip, HVMDIP | download | RoHS non-compliant | 1 (Unlimited) | Vendor Undefined | EAR99 | 0000.00.0000 | 1 | N-Channel | 200 V | 800mA (Ta) | 10V | 800mOhm @ 480mA, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | 1W (Ta) | ||
 |
IRFS59N10DTRLP | - | |
4464 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | PG-TO263-3-2 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 0000.00.0000 | 1 | N-Channel | 100 V | 59A (Tc) | 25mOhm @ 35.4A, 10V | 5.5V @ 250µA | 114 nC @ 10 V | ±30V | 2450 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | ||||
|
RFH75N05 | 4.1100 | |
80 | 0.00000000 | Harris Corporation | - | Bulk | Active | - | Through Hole | TO-218-3 Isolated Tab, TO-218AC | MOSFET (Metal Oxide) | TO-218 Isolated | download | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.29.0095 | 80 | N-Channel | 50 V | - | - | - | - | - | - | - | |||||
 |
IPP120N04S3-02 | 3.2000 | |
30 | 0.00000000 | Infineon Technologies | OptiMOS® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | PG-TO220-3-1 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 0000.00.0000 | 1 | N-Channel | 40 V | 120A (Tc) | 10V | 2.3mOhm @ 80A, 10V | 4V @ 230µA | 210 nC @ 10 V | ±20V | 14300 pF @ 25 V | - | 300W (Tc) | |||
|
IPA60R299CP | - | |
9069 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | PG-TO220-3-31 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 0000.00.0000 | 1 | N-Channel | 600 V | 11A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 33W (Tc) | |||
|
AUIRFR3504 | 1.0600 | |
10 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | D-PAK (TO-252AA) | download | Not applicable | 1 (Unlimited) | REACH Unaffected | EAR99 | 0000.00.0000 | 1 | N-Channel | 40 V | 56A (Tc) | 10V | 9.2mOhm @ 30A, 10V | 4V @ 250µA | 71 nC @ 10 V | ±20V | 2150 pF @ 25 V | - | 140W (Tc) | |||
 |
BSZ0702LSATMA1 | 1.2600 | |
10 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tape & Reel (TR) | Not For New Designs | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | BSZ0702 | MOSFET (Metal Oxide) | PG-TDSON-8 FL | download | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 17A (Ta), 40A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.3V @ 36µA | 22 nC @ 4.5 V | ±20V | 3100 pF @ 30 V | - | 2.1W (Ta), 69W (Tc) | |||
 |
2N7002A | - | |
7776 | 0.00000000 | Diotec Semiconductor | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2N7002 | MOSFET (Metal Oxide) | SOT-23-3 (TO-236) | download | ROHS3 Compliant | 1 (Unlimited) | 2796-2N7002ATR | 8541.21.0000 | 3,000 | N-Channel | 60 V | 280mA (Ta) | 5V, 10V | 2Ohm @ 500mA, 10V | 2.5V @ 250µA | ±30V | 50 pF @ 25 V | - | 350mW (Ta) | ||||
 |
G3R75MT12J | 11.0300 | |
9581 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | G3R75 | SiCFET (Silicon Carbide) | TO-263-7 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R75MT12J | EAR99 | 8541.29.0095 | 50 | N-Channel | 1200 V | 42A (Tc) | 15V | 90mOhm @ 20A, 15V | 2.69V @ 7.5mA | 54 nC @ 15 V | ±15V | 1560 pF @ 800 V | - | 224W (Tc) | ||
|
G2R1000MT33J | 18.6900 | |
1 | 0.00000000 | GeneSiC Semiconductor | G2R™ | Tube | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | G2R1000 | SiCFET (Silicon Carbide) | TO-263-7 | download | RoHS Compliant | 1 (Unlimited) | 1242-G2R1000MT33J | EAR99 | 8541.29.0095 | 50 | N-Channel | 3300 V | 4A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 3.5V @ 2mA | 21 nC @ 20 V | +20V, -5V | 238 pF @ 1000 V | - | 74W (Tc) | ||
 |
SQJ142ELP-T1_GE3 | 1.1600 | |
2 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | SQJ142 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | - | 1 (Unlimited) | 742-SQJ142ELP-T1_GE3TR | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 40 V | 175A (Tc) | 4.5V, 10V | 2.8mOhm @ 10A, 10V | 2.2V @ 250µA | 55 nC @ 10 V | ±20V | 3015 pF @ 25 V | - | 190W (Tc) | |||
 |
DI100N10PQ | 1.5648 | |
5 | 0.00000000 | Diotec Semiconductor | - | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-QFN (5x6) | download | ROHS3 Compliant | 1 (Unlimited) | 2796-DI100N10PQTR | 8541.21.0000 | 5,000 | N-Channel | 100 V | 100A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 3V @ 250µA | 64 nC @ 10 V | ±20V | 3400 pF @ 30 V | - | 250W (Tc) | ||||
 |
SIHU2N80AE-GE3 | 1.0000 | |
7765 | 0.00000000 | Vishay Siliconix | E | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | SIHU2 | MOSFET (Metal Oxide) | TO-251AA | - | ROHS3 Compliant | 1 (Unlimited) | 742-SIHU2N80AE-GE3 | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 800 V | 2.9A (Tc) | 10V | 2.9Ohm @ 500mA, 10V | 4V @ 250µA | 10.5 nC @ 10 V | ±30V | 180 pF @ 100 V | - | 62.5W (Tc) | ||
|
SQJA66EP-T1_GE3 | 1.4400 | |
8768 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | SQJA66 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 75A (Tc) | 10V | 3mOhm @ 10A, 10V | 3.3V @ 250µA | 98 nC @ 10 V | ±20V | 5400 pF @ 25 V | Standard | 68W (Tc) | |||
|
SQJ138EP-T1_GE3 | 1.6400 | |
1233 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, TrenchFET® Gen IV | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | SQJ138 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | - | ROHS3 Compliant | 1 (Unlimited) | 742-SQJ138EP-T1_GE3TR | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 40 V | 330A (Tc) | 10V | 1.8mOhm @ 15A, 10V | 3.5V @ 250µA | 81 nC @ 10 V | ±20V | 4715 pF @ 25 V | - | 312W (Tc) | ||
|
PCF6294W | - | |
6729 | 0.00000000 | onsemi | - | Bulk | Obsolete | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 488-PCF6294W | OBSOLETE | 1 | 13A (Tj) | ||||||||||||||||||
 |
IPW65R115CFD7AXKSA1 | 6.6600 | |
6446 | 0.00000000 | Infineon Technologies | Automotive, AEC-Q101, CoolMOS™ CFD7A | Tube | Active | -40°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IPW65R115 | MOSFET (Metal Oxide) | PG-TO247-3-41 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 21A (Tc) | 10V | 115mOhm @ 9.7A, 10V | 4.5V @ 490µA | 41 nC @ 10 V | ±20V | 1950 pF @ 400 V | - | 114W (Tc) | ||
 |
IPW65R075CFD7AXKSA1 | 11.0800 | |
6714 | 0.00000000 | Infineon Technologies | Automotive, AEC-Q101, CoolMOS™ CFD7A | Tube | Active | -40°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IPW65R075 | MOSFET (Metal Oxide) | PG-TO247-3-41 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 32A (Tc) | 10V | 75mOhm @ 16.4A, 10V | 4.5V @ 820µA | 68 nC @ 10 V | ±20V | 3288 pF @ 400 V | - | 171W (Tc) | ||
|
PHB21N06LT,118 | 0.3700 | |
978 | 0.00000000 | NXP USA Inc. | TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0075 | 1 | N-Channel | 55 V | 19A (Tc) | 5V, 10V | 70mOhm @ 10A, 10V | 2V @ 1mA | 9.4 nC @ 5 V | ±15V | 650 pF @ 25 V | - | 56W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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