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Single FETs, MOSFETs(45591)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRLR7833CTRLPBF | - |  |
9565 | 0.00000000 | Infineon Technologies | - | Tape & Reel (TR) | Obsolete | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | D-Pak | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 140A (Ta) | 4.5V, 10V | - | - | ±20V | - | 140W (Tc) | ||||||
 |
BUK7675-55A,118 | 0.3900 | |
75 | 0.00000000 | NXP Semiconductors | Automotive, AEC-Q101, TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | 1 (Unlimited) | REACH Unaffected | 2156-BUK7675-55A,118-954 | 763 | N-Channel | 55 V | 20.3A (Tc) | 10V | 75mOhm @ 10A, 10V | 4V @ 1mA | ±20V | 483 pF @ 25 V | - | 62W (Tc) | ||||||
 |
DMTH62M8SPS-13 | 0.5722 | |
4820 | 0.00000000 | Diodes Incorporated | - | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | DMTH62 | MOSFET (Metal Oxide) | PowerDI5060-8 (Type K) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 60 V | 100A (Tc) | 10V | 2.8mOhm @ 50A, 10V | 4V @ 250µA | 95.4 nC @ 10 V | ±20V | 4556 pF @ 30 V | - | 3.2W | ||
 |
NVLUS4C12NTAG | 1.5200 | |
2 | 0.00000000 | onsemi | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | NVLUS4 | MOSFET (Metal Oxide) | 6-UDFN (2x2) | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 6.8A (Ta) | 3.3V, 10V | 9mOhm @ 9A, 10V | 2.1V @ 250µA | 18 nC @ 10 V | ±20V | 1172 pF @ 15 V | - | 630mW (Ta) | ||
 |
NTLJS3A18PZTXG | - | |
6419 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | NTLJS3A | MOSFET (Metal Oxide) | 6-WDFN (2x2) | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 10,000 | P-Channel | 20 V | 5A (Ta) | 1.5V, 4.5V | 18mOhm @ 7A, 4.5V | 1V @ 250µA | 28 nC @ 4.5 V | ±8V | 2240 pF @ 15 V | - | 700mW (Ta) | |||
 |
AUIRFS3107-7P | - | |
7617 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | MOSFET (Metal Oxide) | D2PAK (7-Lead) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 75 V | 240A (Tc) | 10V | 2.6mOhm @ 160A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 9200 pF @ 50 V | - | 370W (Tc) | |||
 |
APT5010LLLG | 17.0200 | |
6384 | 0.00000000 | Microchip Technology | POWER MOS 7® | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | APT5010 | MOSFET (Metal Oxide) | TO-264 [L] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 500 V | 46A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 95 nC @ 10 V | ±30V | 4360 pF @ 25 V | - | 520W (Tc) | ||
 |
UF3C065040T3S | 13.1900 | |
629 | 0.00000000 | Qorvo | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | UF3C065040 | TO-220-3 | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | 2312-UF3C065040T3S | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 54A (Tc) | 12V | 52mOhm @ 40A, 12V | 6V @ 10mA | 51 nC @ 15 V | ±25V | 1500 pF @ 100 V | - | 326W (Tc) | ||
 |
IPU80R1K0CEAKMA1 | - | |
2702 | 0.00000000 | Infineon Technologies | CoolMOS™ CE | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPU80R1 | MOSFET (Metal Oxide) | PG-TO251-3-341 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 800 V | 5.7A (Tc) | 10V | 950mOhm @ 3.6A, 10V | 3.9V @ 250µA | 31 nC @ 10 V | ±20V | 785 pF @ 100 V | - | 83W (Tc) | ||
 |
IPC100N04S5L2R6ATMA1 | 1.5100 | |
3751 | 0.00000000 | Infineon Technologies | Automotive, AEC-Q101, OptiMOS™ | Tape & Reel (TR) | Not For New Designs | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | IPC100 | MOSFET (Metal Oxide) | PG-TDSON-8-34 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 40 V | 100A (Tc) | 4.5V, 10V | 2.6mOhm @ 50A, 10V | 2V @ 30µA | 55 nC @ 10 V | ±16V | 2925 pF @ 25 V | - | 75W (Tc) | ||
 |
IPC60R125C6UNSAWNX6SA1 | - | |
4171 | 0.00000000 | Infineon Technologies | - | Bulk | Obsolete | IPC60R | - | 1 (Unlimited) | REACH Unaffected | SP000857778 | OBSOLETE | 0000.00.0000 | 1 | - | |||||||||||||||||
 |
SPP77N06S2-12 | - | |
6787 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | SPP77N | MOSFET (Metal Oxide) | PG-TO220-3-1 | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 500 | N-Channel | 55 V | 80A (Tc) | 10V | 12mOhm @ 38A, 10V | 4V @ 93µA | 60 nC @ 10 V | ±20V | 2350 pF @ 25 V | - | 158W (Tc) | ||
 |
NVMFS5C670NT1G | 1.8000 | |
2634 | 0.00000000 | onsemi | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | NVMFS5 | MOSFET (Metal Oxide) | 5-DFN (5x6) (8-SOFL) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 60 V | 17A (Ta), 71A (Tc) | 10V | 7mOhm @ 11A, 10V | 4V @ 53µA | 14.4 nC @ 10 V | ±20V | 1035 pF @ 30 V | - | 3.6W (Ta), 61W (Tc) | ||
 |
DMN3032LE-13 | 0.5800 | |
192 | 0.00000000 | Diodes Incorporated | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | DMN3032 | MOSFET (Metal Oxide) | SOT-223-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 5.6A (Ta) | 4.5V, 10V | 29mOhm @ 3.2A, 10V | 2V @ 250µA | 11.3 nC @ 10 V | ±20V | 498 pF @ 15 V | - | 1.8W (Ta) | ||
 |
C3M0060065K | 15.0600 | |
309 | 0.00000000 | Wolfspeed, Inc. | C3M™ | Tube | Active | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4 | C3M0060065 | SiCFET (Silicon Carbide) | TO-247-4L | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 37A (Tc) | 15V | 79mOhm @ 13.2A, 15V | 3.6V @ 5mA | 46 nC @ 15 V | +15V, -4V | 1020 pF @ 600 V | - | 150W (Tc) | |||
|
2SK1954-Z-E1-AZ | - | |
3177 | 0.00000000 | Renesas | - | Bulk | Obsolete | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | MP-3Z | - | 2156-2SK1954-Z-E1-AZ | 1 | N-Channel | 180 V | 4A (Ta) | 10V | 650mOhm @ 2A, 10V | 4V @ 1mA | 10 nC @ 10 V | ±20V | 300 pF @ 10 V | - | 1W (Ta), 20W (Tc) | |||||||
|
NVMFS5C410NLAFT1G | 4.1100 | |
8162 | 0.00000000 | onsemi | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | NVMFS5 | MOSFET (Metal Oxide) | 5-DFN (5x6) (8-SOFL) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 40 V | 50A (Ta), 330A (Tc) | 4.5V, 10V | 0.82mOhm @ 50A, 10V | 2V @ 250µA | 143 nC @ 10 V | ±20V | 8862 pF @ 25 V | - | 3.8W (Ta), 167W (Tc) | ||
 |
IRFU7440PBF | 0.7300 | |
108 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | IPAK (TO-251AA) | download | EAR99 | 8542.39.0001 | 409 | N-Channel | 40 V | 90A (Tc) | 6V, 10V | 2.4mOhm @ 90A, 10V | 3.9V @ 100µA | 134 nC @ 10 V | ±20V | 4610 pF @ 25 V | - | 140W (Tc) | ||||||
 |
BSC042NE7NS3GATMA1 | 3.0800 | |
34 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | BSC042 | MOSFET (Metal Oxide) | PG-TDSON-8-1 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 75 V | 19A (Ta), 100A (Tc) | 10V | 4.2mOhm @ 50A, 10V | 3.8V @ 91µA | 69 nC @ 10 V | ±20V | 4800 pF @ 37.5 V | - | 2.5W (Ta), 125W (Tc) | ||
 |
SIA112LDJ-T1-GE3 | 0.7100 | |
5351 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 | SIA112 | MOSFET (Metal Oxide) | PowerPAK® SC-70-6 | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 100 V | 3.5A (Ta), 8.8A (Tc) | 4.5V, 10V | 14mOhm @ 10A, 10V | 2.5V @ 250µA | 11.8 nC @ 10 V | ±25V | 355 pF @ 50 V | - | 2.9W (Ta), 15.6W (Tc) | ||||
 |
IXFB70N100X | 53.8200 | |
62 | 0.00000000 | IXYS | HiPerFET™, Ultra X | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | IXFB70 | MOSFET (Metal Oxide) | PLUS264™ | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 25 | N-Channel | 1000 V | 70A (Tc) | 10V | 89mOhm @ 35A, 10V | 6V @ 8mA | 350 nC @ 10 V | ±30V | 9160 pF @ 25 V | - | 1785W (Tc) | ||
|
2SJ278MYTR | 1.0000 | |
3433 | 0.00000000 | Renesas Electronics America Inc | * | Bulk | Active | download | RoHS non-compliant | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.29.0095 | 1,000 | |||||||||||||||||||
 |
IXFR48N50Q | - | |
4114 | 0.00000000 | IXYS | HiPerFET™, Q Class | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IXFR48 | MOSFET (Metal Oxide) | ISOPLUS247™ | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 500 V | 40A (Tc) | 10V | 110mOhm @ 24A, 10V | 4V @ 4mA | 190 nC @ 10 V | ±20V | 7000 pF @ 25 V | - | 310W (Tc) | ||
 |
IMZ120R090M1HXKSA1 | 14.1900 | |
665 | 0.00000000 | Infineon Technologies | CoolSiC™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | IMZ120 | SiCFET (Silicon Carbide) | PG-TO247-4-1 | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 26A (Tc) | 15V, 18V | 117mOhm @ 8.5A, 18V | 5.7V @ 3.7mA | 21 nC @ 18 V | +23V, -7V | 707 pF @ 800 V | - | 115W (Tc) | ||
|
IXFB62N80Q3 | 43.4700 | |
4928 | 0.00000000 | IXYS | HiPerFET™, Q3 Class | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | IXFB62 | MOSFET (Metal Oxide) | PLUS264™ | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 25 | N-Channel | 800 V | 62A (Tc) | 10V | 140mOhm @ 31A, 10V | 6.5V @ 8mA | 270 nC @ 10 V | ±30V | 13600 pF @ 25 V | - | 1560W (Tc) | ||
|
IXTX3N250L | 67.7467 | |
7322 | 0.00000000 | IXYS | Linear | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | IXTX3 | MOSFET (Metal Oxide) | PLUS247™-3 | - | ROHS3 Compliant | REACH Unaffected | 238-IXTX3N250L | EAR99 | 8541.29.0095 | 30 | N-Channel | 2500 V | 3A (Tc) | 10V | 10Ohm @ 1.5A, 10V | 5V @ 1mA | 230 nC @ 10 V | ±20V | 5400 pF @ 25 V | - | 417W (Tc) | ||
 |
SIR640DP-T1-GE3 | - | |
4553 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | SIR640 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 40 V | 60A (Tc) | 4.5V, 10V | 1.7mOhm @ 20A, 10V | 2.3V @ 250µA | 113 nC @ 10 V | ±20V | 4930 pF @ 20 V | - | 6.25W (Ta), 104W (Tc) | |||
 |
PSMN1R5-40YSDX | 2.3100 | |
4 | 0.00000000 | Nexperia USA Inc. | TrenchMOS™ | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | PSMN1R5 | MOSFET (Metal Oxide) | LFPAK56, Power-SO8 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 40 V | 240A (Ta) | 10V | 1.5mOhm @ 25A, 10V | 3.6V @ 1mA | 99 nC @ 10 V | ±20V | 7752 pF @ 20 V | Schottky Diode (Body) | 238W (Ta) | ||
 |
TK16A60W,S4X | 2.3741 | |
4531 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | Through Hole | TO-220-3 Full Pack | TK16A60 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | TK16A60WS4X | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 40 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 40W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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