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Transistors(61)

Image	Product Number	Pricing(USD)	Quantity	ECAD	Quantity Available	Weight(Kg)	Mfr	Series	Package	Product Status	Operating Temperature	Mounting Type	Package / Case	Base Product Number	Technology	Supplier Device Package	DataSheet	RoHS Status	Moisture Sensitivity Level (MSL)	Other Names	ECCN	HTSUS	Standard Package	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)
	G3R160MT12D	6.5200	RFQ		8130	0.00000000	GeneSiC Semiconductor	G3R™	Tube	Active	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	G3R160	SiCFET (Silicon Carbide)	TO-247-3	download	RoHS Compliant	1 (Unlimited)	1242-G3R160MT12D	EAR99	8541.29.0095	30	N-Channel	1200 V	22A (Tc)	15V	192mOhm @ 10A, 15V	2.69V @ 5mA	28 nC @ 15 V	±15V	730 pF @ 800 V	-	123W (Tc)