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Transistors(2488)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TPH7R006PL,L1Q | 0.8500 |  |
22 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | 8-PowerVDFN | TPH7R006 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 60A (Tc) | 4.5V, 10V | 13.5mOhm @ 10A, 4.5V | 2.5V @ 200µA | 22 nC @ 10 V | ±20V | 1875 pF @ 30 V | - | 81W (Tc) | |||||||||||||
 |
SSM6J808R,LF | 0.6400 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6J808 | MOSFET (Metal Oxide) | 6-TSOP-F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 40 V | 7A (Ta) | 4V, 10V | 35mOhm @ 2.5A, 10V | 2V @ 100µA | 24.2 nC @ 10 V | +10V, -20V | 1020 pF @ 10 V | - | 1.5W (Ta) | |||||||||||||
 |
SSM6P816R,LF | 0.4900 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6P816 | MOSFET (Metal Oxide) | 1.4W (Ta) | 6-TSOP-F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 P-Channel (Dual) | 20V | 6A (Ta) | 30.1mOhm @ 4A, 4.5V | 1V @ 1mA | 16.6nC @ 4.5V | 1030pF @ 10V | Logic Level Gate, 1.8V Drive | |||||||||||||||
|
TPCA8045-H(T2L1,VM | - | |
3369 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8045 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 40 V | 46A (Ta) | 4.5V, 10V | 3.6mOhm @ 23A, 10V | 2.3V @ 1mA | 90 nC @ 10 V | ±20V | 7540 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | |||||||||||||
 |
TPN5900CNH,L1Q | 1.3400 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPN5900 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 150 V | 9A (Ta) | 10V | 59mOhm @ 4.5A, 10V | 4V @ 200µA | 7 nC @ 10 V | ±20V | 600 pF @ 75 V | - | 700mW (Ta), 39W (Tc) | |||||||||||||
 |
2SK3700(F) | 2.5200 | |
100 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | 2SK3700 | MOSFET (Metal Oxide) | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 900 V | 5A (Ta) | 2.5Ohm @ 3A, 10V | 4V @ 1mA | 28 nC @ 10 V | 1150 pF @ 25 V | - | 150W (Tc) | |||||||||||||||
 |
TK12P50W,RQ | 2.0000 | |
6704 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 500 V | 11.5A (Ta) | 10V | 340mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 100W (Tc) | ||||||||||||||
 |
SSM6K403TU,LF | 0.4900 | |
6811 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | SSM6K403 | MOSFET (Metal Oxide) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 4.2A (Ta) | 1.5V, 4V | 28mOhm @ 3A, 4V | 1V @ 1mA | 16.8 nC @ 4 V | ±10V | 1050 pF @ 10 V | - | 500mW (Ta) | |||||||||||||
 |
2SC2383-O(T6OMI,FM | - | |
4250 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2383 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 160 V | 1 A | 1µA (ICBO) | NPN | 1.5V @ 50mA, 500mA | 60 @ 200mA, 5V | 100MHz | ||||||||||||||||||
 |
2SA1869-Y,Q(J | - | |
3028 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SA1869 | 10 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 50 V | 3 A | 1µA (ICBO) | PNP | 600mV @ 200mA, 2A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||
 |
HN1B04FU-Y,LXHF | 0.4200 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | - | Surface Mount | 6-TSSOP, SC-88, SOT-363 | HN1B04 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 150mA | 100nA (ICBO) | NPN, PNP | 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA | 120 @ 2mA, 6V | 150MHz, 120MHz | ||||||||||||||||||
 |
2SC3665-Y(T2NSW,FM | - | |
1068 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | SC-71 | 2SC3665 | 1 W | MSTM | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | NPN | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | ||||||||||||||||||
|
2SK2962,T6F(M | - | |
4332 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-226-3, TO-92-3 Long Body | 2SK2962 | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 1A (Tj) | ||||||||||||||||||||||||||
 |
TPCC8136.LQ | - | |
7165 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerVDFN | TPCC8136 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | - | 1 (Unlimited) | 264-TPCC8136.LQTR | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 9.4A (Ta) | 1.8V, 4.5V | 16mOhm @ 9.4A, 4.5V | 1.2V @ 1mA | 36 nC @ 5 V | ±12V | 2350 pF @ 10 V | - | 700mW (Ta), 18W (Tc) | |||||||||||||
 |
TPCP8004(TE85L,F) | - | |
6792 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TPCP8004 | MOSFET (Metal Oxide) | PS-8 (2.9x2.4) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 8.3A (Ta) | 4.5V, 10V | 8.5mOhm @ 4.2A, 10V | 2.5V @ 1mA | 26 nC @ 10 V | ±20V | 1270 pF @ 10 V | - | 840mW (Ta) | ||||||||||||||
 |
RN2106MFV,L3XHF(CT | 0.3400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN2106 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 500µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 4.7 kOhms | 47 kOhms | |||||||||||||||||
 |
TPH1R204PL1,LQ | 1.6600 | |
16 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-SOP Advance (5x5.75) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 40 V | 150A (Tc) | 4.5V, 10V | 1.24mOhm @ 50A, 10V | 2.4V @ 500µA | 74 nC @ 10 V | ±20V | 7200 pF @ 20 V | - | 960mW (Ta), 170W (Tc) | |||||||||||||||
|
RN1131MFV,L3F | 0.1800 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN1131 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 500µA, 5mA | 120 @ 1mA, 5V | 100 kOhms | |||||||||||||||||||
 |
SSM3J35CTC,L3F | 0.3400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | SSM3J35 | MOSFET (Metal Oxide) | CST3C | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | P-Channel | 20 V | 250mA (Ta) | 1.2V, 4.5V | 1.4Ohm @ 150mA, 4.5V | 1V @ 100µA | ±10V | 42 pF @ 10 V | - | 500mW (Ta) | ||||||||||||||
 |
SSM3J306T(TE85L,F) | - | |
5083 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSM3J306 | MOSFET (Metal Oxide) | TSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 30 V | 2.4A (Ta) | 4V, 10V | 117mOhm @ 1A, 10V | - | 2.5 nC @ 15 V | ±20V | 280 pF @ 15 V | - | 700mW (Ta) | ||||||||||||||
 |
TK30A06N1,S4X | 0.9300 | |
4866 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK30A06 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 30A (Tc) | 10V | 15mOhm @ 15A, 10V | 4V @ 200µA | 16 nC @ 10 V | ±20V | 1050 pF @ 30 V | - | 25W (Tc) | |||||||||||||
 |
TK20C60W,S1VQ | - | |
8691 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TK20C60 | MOSFET (Metal Oxide) | I2PAK | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 20A (Ta) | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48 nC @ 10 V | ±30V | 1680 pF @ 300 V | - | 165W (Tc) | |||||||||||||
|
SSM3J325F,LF | 0.4100 | |
17 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSM3J325 | MOSFET (Metal Oxide) | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 2A (Ta) | 1.5V, 4.5V | 150mOhm @ 1A, 4.5V | - | 4.6 nC @ 4.5 V | ±8V | 270 pF @ 10 V | - | 600mW (Ta) | |||||||||||||
 |
TK16J60W5,S1VQ | 5.2000 | |
32 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-3P-3, SC-65-3 | TK16J60 | MOSFET (Metal Oxide) | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 600 V | 15.8A (Ta) | 10V | 230mOhm @ 7.9A, 10V | 4.5V @ 790µA | 43 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 130W (Tc) | |||||||||||||
 |
RN4609(TE85L,F) | 0.4800 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74, SOT-457 | RN4609 | 300mW | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200MHz | 47kOhms | 22kOhms | ||||||||||||||||
|
TPN4R712MD,L1Q | 0.8500 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPN4R712 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | P-Channel | 20 V | 36A (Tc) | 2.5V, 4.5V | 4.7mOhm @ 18A, 4.5V | 1.2V @ 1mA | 65 nC @ 5 V | ±12V | 4300 pF @ 10 V | - | 42W (Tc) | |||||||||||||
 |
SSM3J375F,LXHF | 0.4900 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 2A (Ta) | 1.5V, 4.5V | 150mOhm @ 1A, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | +6V, -8V | 270 pF @ 10 V | - | 600mW (Ta) | ||||||||||||||
|
TW015Z65C,S1F | 48.8100 | |
120 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-4 | SiC (Silicon Carbide Junction Transistor) | TO-247-4L(X) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 100A (Tc) | 18V | 22mOhm @ 50A, 18V | 5V @ 11.7mA | 128 nC @ 18 V | +25V, -10V | 4850 pF @ 400 V | - | 342W (Tc) | ||||||||||||||
 |
SSM3K361R,LXHF | 0.6400 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | SOT-23-3 Flat Leads | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 100 V | 3.5A (Ta) | 4.5V, 10V | 69mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2 nC @ 4.5 V | ±20V | 430 pF @ 15 V | - | 1.2W (Ta) | ||||||||||||||
 |
SSM6N55NU,LF | 0.4400 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | SSM6N55 | MOSFET (Metal Oxide) | 1W | 6-µDFN (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) | 30V | 4A | 46mOhm @ 4A, 10V | 2.5V @ 100µA | 2.5nC @ 4.5V | 280pF @ 15V | Logic Level Gate |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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