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Transistors(2488)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TK30A06N1,S4X | 0.9300 |  |
4866 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK30A06 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 30A (Tc) | 10V | 15mOhm @ 15A, 10V | 4V @ 200µA | 16 nC @ 10 V | ±20V | 1050 pF @ 30 V | - | 25W (Tc) | |||||||||||||||
|
TK8A65W,S5X | 1.7800 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK8A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 7.8A (Ta) | 10V | 650mOhm @ 3.9A, 10V | 3.5V @ 300µA | 16 nC @ 10 V | ±30V | 570 pF @ 300 V | - | 30W (Tc) | |||||||||||||||
 |
TK16C60W,S1VQ | - | |
7901 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TK16C60 | MOSFET (Metal Oxide) | I2PAK | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 130W (Tc) | |||||||||||||||
 |
TK70D06J1(Q) | - | |
8209 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 | TK70 | MOSFET (Metal Oxide) | TO-220(W) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 70A (Ta) | 4.5V, 10V | 6.4mOhm @ 35A, 10V | 2.3V @ 1mA | 87 nC @ 10 V | ±20V | 5450 pF @ 10 V | - | 45W (Tc) | ||||||||||||||||
 |
RN1905FE,LF(CT | 0.2700 | |
458 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN1905 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 2.2kOhms | 47kOhms | ||||||||||||||||||
|
RN1907FE,LF(CT | 0.2700 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN1907 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 10kOhms | 47kOhms | ||||||||||||||||||
 |
TPHR6503PL1,LQ | 2.2000 | |
24 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-SOP Advance (5x5.75) | - | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 150A (Tc) | 4.5V, 10V | 0.65mOhm @ 50A, 10V | 2.1V @ 1mA | 110 nC @ 10 V | ±20V | 10000 pF @ 15 V | - | 960mW (Ta), 210W (Tc) | |||||||||||||||||
 |
TK12A50W,S5X | 2.1100 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 11.5A (Ta) | 10V | 300mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 35W (Tc) | ||||||||||||||||
 |
TK14A45D(STA4,Q,M) | 3.0300 | |
4530 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | - | Through Hole | TO-220-3 Full Pack | TK14A45 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 450 V | 14A | 340mOhm @ 7A, 10V | - | - | - | |||||||||||||||||||
 |
SSM6J409TU(TE85L,F | - | |
3544 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSV | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | SSM6J409 | MOSFET (Metal Oxide) | UF6 | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 9.5A (Ta) | 1.5V, 4.5V | 22.1mOhm @ 3A, 4.5V | 1V @ 1mA | 15 nC @ 4.5 V | ±8V | 1100 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||
|
TPCP8407,LF | 0.7400 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-SMD, Flat Lead | TPCP8407 | MOSFET (Metal Oxide) | 690mW (Ta) | PS-8 | download | ROHS3 Compliant | 1 (Unlimited) | 264-TPCP8407LFCT | EAR99 | 8541.21.0095 | 3,000 | N and P-Channel | 40V | 5A (Ta), 4A (Ta) | 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V | 3V @ 1mA | 11.8nC @ 10V, 18nC @ 10V | 505pF @ 10V, 810pF @ 10V | - | ||||||||||||||||
 |
TPH7R506NH,L1Q | 1.4700 | |
26 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH7R506 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 22A (Ta) | 10V | 7.5mOhm @ 11A, 10V | 4V @ 300µA | 31 nC @ 10 V | ±20V | 2320 pF @ 30 V | - | 1.6W (Ta), 45W (Tc) | |||||||||||||||
 |
2SA1930,Q(J | - | |
3454 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SA1930 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 180 V | 2 A | 5µA (ICBO) | PNP | 1V @ 100mA, 1A | 100 @ 100mA, 5V | 200MHz | ||||||||||||||||||||
 |
SSM3J358R,LF | 0.4700 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SSM3J358 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 6A (Ta) | 1.8V, 8V | 22.1mOhm @ 6A, 8V | 1V @ 1mA | 38.5 nC @ 8 V | ±10V | 1331 pF @ 10 V | - | 1W (Ta) | |||||||||||||||
 |
2SC2712-Y,LF | 0.2100 | |
4409 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SC2712 | 150 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 150 mA | 100nA (ICBO) | NPN | 250mV @ 10mA, 100mA | 120 @ 2mA, 6V | 80MHz | |||||||||||||||||||
 |
RN1705,LF | 0.3000 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | RN1705 | 200mW | USV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 2.2kOhms | 47kOhms | ||||||||||||||||||
|
2SC5439(F) | - | |
9123 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SC5439 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | 450 V | 8 A | 100µA (ICBO) | NPN | 1V @ 640mA, 3.2A | 14 @ 1A, 5V | - | ||||||||||||||||||||
 |
TPCC8002-H(TE12LQM | - | |
2576 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSV-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | TPCC8002 | MOSFET (Metal Oxide) | 8-TSON Advance (3.3x3.3) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 22A (Ta) | 4.5V, 10V | 8.3mOhm @ 11A, 10V | 2.5V @ 1mA | 27 nC @ 10 V | ±20V | 2500 pF @ 10 V | - | 700mW (Ta), 30W (Tc) | ||||||||||||||||
|
2SC4793,YHF(J | - | |
4612 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SC4793 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 230 V | 1 A | 1µA (ICBO) | NPN | 1.5V @ 50mA, 500mA | 100 @ 100mA, 5V | 100MHz | ||||||||||||||||||||
|
TPH8R903NL,LQ | 0.8500 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH8R903 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 20A (Tc) | 10V | 8.9mOhm @ 10A, 10V | 2.3V @ 1mA | 9.8 nC @ 10 V | ±20V | 820 pF @ 15 V | - | 1.6W (Ta), 24W (Tc) | |||||||||||||||
 |
SSM6K202FE,LF | 0.4600 | |
15 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6K202 | MOSFET (Metal Oxide) | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | N-Channel | 30 V | 2.3A (Ta) | 1.8V, 4V | 85mOhm @ 1.5A, 4V | 1V @ 1mA | ±12V | 270 pF @ 10 V | - | 500mW (Ta) | ||||||||||||||||
|
TPCA8A02-H(TE12LQM | - | |
8734 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSV-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8A02 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 34A (Ta) | 4.5V, 10V | 5.3mOhm @ 17A, 10V | 2.3V @ 1mA | 36 nC @ 10 V | ±20V | 3430 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | ||||||||||||||||
|
RN2964FE(TE85L,F) | - | |
1932 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOT-563, SOT-666 | RN2964 | 100mW | ES6 | - | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 47kOhms | 47kOhms | |||||||||||||||||||
 |
RN2109ACT(TPL3) | 0.3400 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-101, SOT-883 | RN2109 | 100 mW | CST3 | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 50 V | 80 mA | 500nA | PNP - Pre-Biased | 150mV @ 250µA, 5mA | 70 @ 10mA, 5V | 47 kOhms | 22 kOhms | |||||||||||||||||||
 |
TPC8110(TE12L,Q,M) | - | |
6368 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8110 | MOSFET (Metal Oxide) | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 40 V | 8A (Ta) | 4V, 10V | 25mOhm @ 4A, 10V | 2V @ 1mA | 48 nC @ 10 V | ±20V | 2180 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||
 |
MT3S20TU(TE85L) | - | |
2541 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 3-SMD, Flat Lead | MT3S20 | 900mW | UFM | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 12dB | 12V | 80mA | NPN | 100 @ 50mA, 5V | 7GHz | 1.45dB @ 20mA, 5V | |||||||||||||||||||
|
2SA1837,NSEIKIF(J | - | |
1887 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SA1837 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 230 V | 1 A | 1µA (ICBO) | PNP | 1.5V @ 50mA, 500mA | 100 @ 100mA, 5V | 70MHz | ||||||||||||||||||||
 |
SSM3J108TU(TE85L) | - | |
2405 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | SSM3J108 | MOSFET (Metal Oxide) | UFM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 1.8A (Ta) | 1.8V, 4V | 158mOhm @ 800mA, 4V | 1V @ 1mA | ±8V | 250 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||
 |
2SA1425-Y,T2F(J | - | |
5109 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | SC-71 | 2SA1425 | 1 W | MSTM | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | PNP | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | ||||||||||||||||||||
|
TPH2010FNH,L1Q | 1.6200 | |
10 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH2010 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 250 V | 5.6A (Ta) | 10V | 198mOhm @ 2.8A, 10V | 4V @ 200µA | 7 nC @ 10 V | ±20V | 600 pF @ 100 V | - | 1.6W (Ta), 42W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
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