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Transistors(2488)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TPC8211(TE12L,Q,M) | - |  |
1656 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8211 | MOSFET (Metal Oxide) | 450mW | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 30V | 5.5A | 36mOhm @ 3A, 10V | 2.5V @ 1mA | 25nC @ 10V | 1250pF @ 10V | Logic Level Gate | ||||||||||||||||
 |
TK58E06N1,S1X | 1.4600 | |
7818 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK58E06 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 58A (Ta) | 10V | 5.4mOhm @ 29A, 10V | 4V @ 500µA | 46 nC @ 10 V | ±20V | 3400 pF @ 30 V | - | 110W (Tc) | |||||||||||||
 |
RN1113,LF(CT | 0.2000 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1113 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250 MHz | 47 kOhms | ||||||||||||||||||
 |
RN2105MFV,L3F(CT | 0.1800 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN2105 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 8,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 500µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 2.2 kOhms | 47 kOhms | |||||||||||||||||
 |
TK6A65W,S5X | 1.7300 | |
4293 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK6A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 5.8A (Ta) | 10V | 1Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11 nC @ 10 V | ±30V | 390 pF @ 300 V | - | 30W (Tc) | |||||||||||||
|
SSM3J35AMFV,L3F | 0.2500 | |
58 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-723 | SSM3J35 | MOSFET (Metal Oxide) | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | P-Channel | 20 V | 250mA (Ta) | 1.2V, 4.5V | 1.4Ohm @ 150mA, 4.5V | 1V @ 100µA | ±10V | 42 pF @ 10 V | - | 150mW (Ta) | ||||||||||||||
 |
TW060Z120C,S1F | 17.8200 | |
7048 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-4 | SiC (Silicon Carbide Junction Transistor) | TO-247-4L(X) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 36A (Tc) | 18V | 82mOhm @ 18A, 18V | 5V @ 4.2mA | 46 nC @ 18 V | +25V, -10V | 1530 pF @ 800 V | - | 170W (Tc) | ||||||||||||||
|
RN2412,LF | 0.0309 | |
8990 | 0.00000000 | Toshiba Semiconductor and Storage | * | Tape & Reel (TR) | Active | - | ROHS3 Compliant | 264-RN2412,LFTR | 3,000 | ||||||||||||||||||||||||||||||||
|
SSM10N961L,ELF | 0.8700 | |
9155 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 10-XFLGA, CSP | MOSFET (Metal Oxide) | 880mW (Ta) | TCSPAG-341501 | - | ROHS3 Compliant | 1 (Unlimited) | 10,000 | 2 N-Channel (Half Bridge) | 30V | 9A (Ta) | 2.3V @ 250µA | 17.3nC @ 10V | - | - | |||||||||||||||||||
 |
SSM3K35MFV,L3F | - | |
6004 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-723 | SSM3K35 | MOSFET (Metal Oxide) | VESM | download | RoHS Compliant | 1 (Unlimited) | SSM3K35MFVL3F | EAR99 | 8541.21.0095 | 8,000 | N-Channel | 20 V | 180mA (Ta) | 1.2V, 4V | 3Ohm @ 50mA, 4V | 1V @ 1mA | ±10V | 9.5 pF @ 3 V | - | 150mW (Ta) | |||||||||||||
 |
2SJ438,MDKQ(J | - | |
1464 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-220-3 Full Pack | 2SJ438 | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1 | 5A (Tj) | ||||||||||||||||||||||||||
|
TPC8405(TE12L,Q,M) | - | |
3778 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8405 | MOSFET (Metal Oxide) | 450mW | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N and P-Channel | 30V | 6A, 4.5A | 26mOhm @ 3A, 10V | 2V @ 1mA | 27nC @ 10V | 1240pF @ 10V | Logic Level Gate | ||||||||||||||||
 |
SSM6N7002KFU,LF | 0.2500 | |
703 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SSM6N7002 | MOSFET (Metal Oxide) | 285mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 60V | 300mA | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | - | |||||||||||||||
 |
SSM5G10TU(TE85L,F) | 0.3600 | |
40 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 6-SMD (5 Leads), Flat Lead | SSM5G10 | MOSFET (Metal Oxide) | UFV | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 1.5A (Ta) | 1.8V, 4V | 213mOhm @ 1A, 4V | 1V @ 1mA | 6.4 nC @ 4 V | ±8V | 250 pF @ 10 V | Schottky Diode (Isolated) | 500mW (Ta) | ||||||||||||||
|
SSM3K72KFS,LXHF | 0.3300 | |
9054 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | SC-75, SOT-416 | MOSFET (Metal Oxide) | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 60 V | 300mA (Ta) | 4.5V, 10V | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6 nC @ 4.5 V | ±20V | 40 pF @ 10 V | - | 150mW (Ta) | |||||||||||||||
 |
TPN22006NH,LQ | 0.9600 | |
3455 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPN22006 | MOSFET (Metal Oxide) | 8-TSON Advance (3.3x3.3) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 9A (Ta) | 6.5V, 10V | 22mOhm @ 4.5A, 10V | 4V @ 100µA | 12 nC @ 10 V | ±20V | 710 pF @ 30 V | - | 700mW (Ta), 18W (Tc) | |||||||||||||
|
TK16E60W,S1VX | 2.8600 | |
4631 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK16E60 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 130W (Tc) | |||||||||||||
 |
TKR74F04PB,LXGQ | 4.5400 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TKR74F04 | MOSFET (Metal Oxide) | TO-220SM(W) | download | 3 (168 Hours) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 40 V | 250A (Ta) | 6V, 10V | 0.74mOhm @ 125A, 10V | 3V @ 1mA | 227 nC @ 10 V | ±20V | 14200 pF @ 10 V | - | 375W (Tc) | ||||||||||||||
 |
TPC6006-H(TE85L,F) | - | |
4684 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TPC6006 | MOSFET (Metal Oxide) | VS-6 (2.9x2.8) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 40 V | 3.9A (Ta) | 4.5V, 10V | 75mOhm @ 1.9A, 10V | 2.3V @ 1mA | 4.4 nC @ 10 V | ±20V | 251 pF @ 10 V | - | 700mW (Ta) | ||||||||||||||
 |
SSM6N42FE(TE85L,F) | - | |
4807 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6N42 | MOSFET (Metal Oxide) | 150mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 2 N-Channel (Dual) | 20V | 800mA | 240mOhm @ 500mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 90pF @ 10V | Logic Level Gate | ||||||||||||||||
 |
TK15A60D(STA4,Q,M) | - | |
5345 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK15A60 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 15A (Ta) | 10V | 370mOhm @ 7.5A, 10V | 4V @ 1mA | 45 nC @ 10 V | ±30V | 2600 pF @ 25 V | - | 50W (Tc) | |||||||||||||
|
TPC8227-H,LQ | - | |
5995 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Bulk | Active | 150°C | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | TPC8227 | MOSFET (Metal Oxide) | 1.5W (Ta) | 8-SOP | download | 264-TPC8227-HLQ | EAR99 | 8541.29.0095 | 1 | 2 N-Channel (Dual) | 40V | 5.1A | 33mOhm @ 2.6A, 10V | 2.3V @ 100µA | 10nC @ 10V | 640pF @ 10V | - | ||||||||||||||||
 |
TPN2R304PL,L1Q | 0.9600 | |
27 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPN2R304 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 40 V | 80A (Tc) | 4.5V, 10V | 2.3mOhm @ 40A, 10V | 2.4V @ 300µA | 41 nC @ 10 V | ±20V | 3600 pF @ 20 V | - | 630mW (Ta), 104W (Tc) | |||||||||||||
|
TK200F04N1L,LXGQ | 3.5600 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TK200F04 | MOSFET (Metal Oxide) | TO-220SM(W) | download | 3 (168 Hours) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 40 V | 200A (Ta) | 6V, 10V | 0.9mOhm @ 100A, 10V | 3V @ 1mA | 214 nC @ 10 V | ±20V | 14920 pF @ 10 V | - | 375W (Tc) | ||||||||||||||
|
2SK3798(STA4,Q,M) | 1.4000 | |
9938 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 900 V | 4A (Ta) | 10V | 3.5Ohm @ 2A, 10V | 4V @ 1mA | 26 nC @ 10 V | ±30V | 800 pF @ 25 V | - | 40W (Tc) | ||||||||||||||
 |
SSM3K2615TU,LF | 0.5200 | |
12 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSV | Tape & Reel (TR) | Active | 150°C | Surface Mount | 3-SMD, Flat Leads | SSM3K2615 | MOSFET (Metal Oxide) | UFM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 60 V | 2A (Ta) | 3.3V, 10V | 300mOhm @ 1A, 10V | 2V @ 1mA | 6 nC @ 10 V | ±20V | 150 pF @ 10 V | - | 800mW (Ta) | |||||||||||||
 |
SSM3K72KCT,L3F | 0.2500 | |
71 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | SC-101, SOT-883 | SSM3K72 | MOSFET (Metal Oxide) | CST3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | N-Channel | 60 V | 400mA (Ta) | 4.5V, 10V | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6 nC @ 4.5 V | ±20V | 40 pF @ 10 V | - | 500mW (Ta) | |||||||||||||
|
SSM6L36FE,LM | 0.4500 | |
108 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6L36 | MOSFET (Metal Oxide) | 150mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | N and P-Channel | 20V | 500mA, 330mA | 630mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | Logic Level Gate | |||||||||||||||
|
RN1103,LXHF(CT | 0.3300 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1103 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250 MHz | 22 kOhms | 22 kOhms | |||||||||||||||||
|
RN2109,LXHF(CT | 0.3300 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN2109 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200 MHz | 47 kOhms | 22 kOhms |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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