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Transistors(2488)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Voltage - Test | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TK6A60W,S4VX | 2.2500 |  |
9900 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK6A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 6.2A (Ta) | 10V | 750mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12 nC @ 10 V | ±30V | 390 pF @ 300 V | - | 30W (Tc) | |||||||||||||||||||||
 |
TK62N60W,S1VF | 16.4000 | |
6481 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | TK62N60 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 600 V | 61.8A (Ta) | 10V | 40mOhm @ 30.9A, 10V | 3.7V @ 3.1mA | 180 nC @ 10 V | ±30V | 6500 pF @ 300 V | - | 400W (Tc) | |||||||||||||||||||||
 |
2SA2142(TE16L1,NQ) | 0.9700 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1 W | PW-MOLD | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 2,000 | 600 V | 500 mA | 10µA (ICBO) | PNP | 1V @ 10mA, 100mA | 100 @ 50mA, 5V | 35MHz | ||||||||||||||||||||||||||
 |
SSM5N16FUTE85LF | - | |
5880 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | SSM5N16 | MOSFET (Metal Oxide) | 5-SSOP | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 100mA (Ta) | 1.5V, 4V | 3Ohm @ 10mA, 4V | - | ±10V | 9.3 pF @ 3 V | - | 200mW (Ta) | ||||||||||||||||||||||
 |
SSM6K514NU,LF | 0.4700 | |
47 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-WDFN Exposed Pad | SSM6K514 | MOSFET (Metal Oxide) | 6-UDFNB (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 40 V | 12A (Ta) | 4.5V, 10V | 11.6mOhm @ 4A, 10V | 2.4V @ 100µA | 7.5 nC @ 4.5 V | ±20V | 1110 pF @ 20 V | - | 2.5W (Ta) | |||||||||||||||||||||
 |
TPCF8201(TE85L,F,M | - | |
6558 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TPCF8201 | MOSFET (Metal Oxide) | 330mW | VS-8 (2.9x1.5) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 2 N-Channel (Dual) | 20V | 3A | 49mOhm @ 1.5A, 4.5V | 1.2V @ 200µA | 7.5nC @ 5V | 590pF @ 10V | Logic Level Gate | ||||||||||||||||||||||||
 |
TPC8133,LQ(S | 1.2800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | TPC8133 | MOSFET (Metal Oxide) | 8-SOP | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 40 V | 9A (Ta) | 4.5V, 10V | 15mOhm @ 4.5A, 10V | 2V @ 500µA | 64 nC @ 10 V | +20V, -25V | 2900 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||||
 |
2SC1627A-O,PASF(M | - | |
7005 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC1627 | 800 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 80 V | 400 mA | 100nA (ICBO) | NPN | 400mV @ 20mA, 200A | 70 @ 50mA, 2V | 100MHz | ||||||||||||||||||||||||||
 |
RN2105MFV,L3F | - | |
8823 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN2105 | 150 mW | VESM | download | RoHS Compliant | 1 (Unlimited) | RN2105MFVL3F | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 500µA, 5mA | 80 @ 10mA, 5V | 2.2 kOhms | 47 kOhms | ||||||||||||||||||||||||
 |
TK7P65W,RQ | 1.6300 | |
7459 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK7P65 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 650 V | 6.8A (Ta) | 10V | 800mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15 nC @ 10 V | ±30V | 490 pF @ 300 V | - | 60W (Tc) | |||||||||||||||||||||
|
TK25A60X,S5X | 4.0100 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK25A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 25A (Ta) | 10V | 125mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 45W (Tc) | |||||||||||||||||||||
|
TK1K9A60F,S4X | 0.9000 | |
4438 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK1K9A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 3.7A (Ta) | 10V | 1.9Ohm @ 1.9A, 10V | 4V @ 400µA | 14 nC @ 10 V | ±30V | 490 pF @ 300 V | - | 30W (Tc) | |||||||||||||||||||||
 |
TPC8212-H(TE12LQ,M | - | |
9667 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8212 | MOSFET (Metal Oxide) | 450mW | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 30V | 6A | 21mOhm @ 3A, 10V | 2.3V @ 1mA | 16nC @ 10V | 840pF @ 10V | Logic Level Gate | ||||||||||||||||||||||||
 |
RN2901FE(TE85L,F) | 0.3500 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN2901 | 100mW | ES6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 200MHz | 4.7kOhms | 4.7kOhms | ||||||||||||||||||||||||
|
TK31N60W5,S1VF | 7.0800 | |
3930 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | TK31N60 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 600 V | 30.8A (Ta) | 10V | 99mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | |||||||||||||||||||||
|
SSM5N15FU,LF | 0.4300 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | SSM5N15 | MOSFET (Metal Oxide) | 5-SSOP | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | - | ±20V | 7.8 pF @ 3 V | - | 200mW (Ta) | ||||||||||||||||||||||
|
TPC8109(TE12L) | - | |
2232 | 0.00000000 | Toshiba Semiconductor and Storage | - | Cut Tape (CT) | Obsolete | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8109 | MOSFET (Metal Oxide) | 8-SOP (5.5x6.0) | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 10A (Ta) | 20mOhm @ 5A, 10V | 2V @ 1mA | 45 nC @ 10 V | 2260 pF @ 10 V | - | |||||||||||||||||||||||||
 |
SSM3K336R,LF | 0.4300 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SSM3K336 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 3A (Ta) | 4.5V, 10V | 95mOhm @ 2A, 10V | 2.5V @ 100µA | 1.7 nC @ 4.5 V | ±20V | 126 pF @ 15 V | - | 1W (Ta) | |||||||||||||||||||||
|
2SK3670(F,M) | - | |
3769 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-226-3, TO-92-3 Long Body | 2SK3670 | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 670mA (Tj) | ||||||||||||||||||||||||||||||||||
|
TTA006B,Q(S | - | |
1451 | 0.00000000 | Toshiba Semiconductor and Storage | * | Tube | Active | TTA006 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0075 | 250 | |||||||||||||||||||||||||||||||||||||
 |
RN4990(TE85L,F) | 0.3400 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4990 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250MHz, 200MHz | 4.7kOhms | - | |||||||||||||||||||||||||
|
TPC8038-H(TE12L,Q) | - | |
2841 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSV-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8038 | MOSFET (Metal Oxide) | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 12A (Ta) | 11.4mOhm @ 6A, 10V | 2.5V @ 1mA | 21 nC @ 10 V | 2150 pF @ 10 V | - | - | ||||||||||||||||||||||||
 |
2SC3325-O(TE85L,F) | 0.3900 | |
9502 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SC3325 | 200 mW | S-Mini | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 500 mA | 100nA (ICBO) | NPN | 250mV @ 10mA, 100mA | 70 @ 100mA, 1V | 300MHz | |||||||||||||||||||||||||
|
2SK2989(TPE6,F,M) | - | |
8590 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-226-3, TO-92-3 Long Body | 2SK2989 | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 5A (Tj) | ||||||||||||||||||||||||||||||||||
 |
TPHR9003NL1,LQ | 1.5900 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-SOP Advance (5x5.75) | - | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 150A (Tc) | 4.5V, 10V | 0.9mOhm @ 50A, 10V | 2.3V @ 1mA | 74 nC @ 10 V | ±20V | 6900 pF @ 15 V | - | 800mW (Ta), 170W (Tc) | |||||||||||||||||||||||
 |
SSM6J207FE,LF | 0.4200 | |
9048 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6J207 | MOSFET (Metal Oxide) | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | P-Channel | 30 V | 1.4A (Ta) | 4V, 10V | 251mOhm @ 650mA, 10V | 2.6V @ 1mA | ±20V | 137 pF @ 15 V | - | 500mW (Ta) | ||||||||||||||||||||||
 |
TPH3R704PC,LQ | 0.9900 | |
14 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPH3R704 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 40 V | 82A (Tc) | 4.5V, 10V | 3.7mOhm @ 41A, 10V | 2.4V @ 300µA | 47 nC @ 10 V | ±20V | 3615 pF @ 20 V | - | 830mW (Ta), 90W (Tc) | ||||||||||||||||||||||
 |
SSM3J36FS,LF | 0.2900 | |
479 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM3J36 | MOSFET (Metal Oxide) | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 330mA (Ta) | 1.5V, 4.5V | 1.31Ohm @ 100mA, 4.5V | 1V @ 1mA | 1.2 nC @ 4 V | ±8V | 43 pF @ 10 V | - | 150mW (Ta) | |||||||||||||||||||||
 |
3SK293(TE85L,F) | 0.5200 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Not For New Designs | 12.5 V | Surface Mount | SC-82A, SOT-343 | 3SK293 | 800MHz | MOSFET | USQ | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel Dual Gate | 30mA | 10 mA | - | 22dB | 2.5dB | 6 V | ||||||||||||||||||||||||
|
SSM6J214FE(TE85L,F | 0.3900 | |
30 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-563, SOT-666 | SSM6J214 | MOSFET (Metal Oxide) | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | P-Channel | 30 V | 3.6A (Ta) | 1.8V, 10V | 50mOhm @ 3A, 10V | 1.2V @ 1mA | 7.9 nC @ 4.5 V | ±12V | 560 pF @ 15 V | - | 500mW (Ta) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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