Tel: +86-0755-83501315
Email: sales@sic-components.com
Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) |
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TK60S10N1L,LXHQ | 1.5800 | ![]() |
1308 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK60S10 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 100 V | 60A (Ta) | 6V, 10V | 6.11mOhm @ 30A, 10V | 3.5V @ 500µA | 60 nC @ 10 V | ±20V | 4320 pF @ 10 V | - | 180W (Tc) | |||||||||||||||||||
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TK15S04N1L,LXHQ | 0.9600 | ![]() |
3131 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK15S04 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 40 V | 15A (Ta) | 4.5V, 10V | 17.8mOhm @ 7.5A, 10V | 2.5V @ 100µA | 10 nC @ 10 V | ±20V | 610 pF @ 10 V | - | 46W (Tc) | |||||||||||||||||||
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TK33S10N1L,LXHQ | 1.3200 | ![]() |
2353 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK33S10 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 100 V | 33A (Ta) | 4.5V, 10V | 9.7mOhm @ 16.5A, 10V | 2.5V @ 500µA | 33 nC @ 10 V | ±20V | 2250 pF @ 10 V | - | 125W (Tc) | |||||||||||||||||||
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XPH4R10ANB,L1XHQ | 2.2600 | ![]() |
34 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-SOIC (0.197", 5.00mm Width) | XPH4R10 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | - | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 100 V | 70A (Ta) | 6V, 10V | 4.1mOhm @ 35A, 10V | 3.5V @ 1mA | 75 nC @ 10 V | ±20V | 4970 pF @ 10 V | - | 960mW (Ta), 170W (Tc) | |||||||||||||||||||
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TK7S10N1Z,LXHQ | 0.8900 | ![]() |
7428 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK7S10 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 100 V | 7A (Ta) | 10V | 48mOhm @ 3.5A, 10V | 4V @ 100µA | 7.1 nC @ 10 V | ±20V | 470 pF @ 10 V | - | 50W (Tc) | |||||||||||||||||||
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TK155A65Z,S4X | 3.1400 | ![]() |
7428 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK155A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 18A (Ta) | 10V | 155mOhm @ 9A, 10V | 4V @ 730µA | 29 nC @ 10 V | ±30V | 1635 pF @ 300 V | - | 40W (Tc) | ||||||||||||||||||
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TK090A65Z,S4X | 4.7900 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK090A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 30A (Ta) | 10V | 90mOhm @ 15A, 10V | 4V @ 1.27mA | 47 nC @ 10 V | ±30V | 2780 pF @ 300 V | - | 45W (Tc) | ||||||||||||||||||
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SSM3J356R,LXHF | 0.4900 | ![]() |
7563 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-23-3 Flat Leads | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | 264-SSM3J356R,LXHFCT | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 60 V | 2A (Ta) | 4V, 10V | 300mOhm @ 1A, 10V | 2V @ 1mA | 8.3 nC @ 10 V | +10V, -20V | 330 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||||
TK14C65W,S1Q | - | ![]() |
2199 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TK14C65 | MOSFET (Metal Oxide) | I2PAK | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 13.7A (Ta) | 10V | 250mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35 nC @ 10 V | ±30V | 1300 pF @ 300 V | - | 130W (Tc) | |||||||||||||||||||
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TK110Z65Z,S1F | 6.4000 | ![]() |
25 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tube | Active | 150°C | Through Hole | TO-247-4 | MOSFET (Metal Oxide) | TO-247-4L(T) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 650 V | 24A (Ta) | 10V | 110mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 190W (Tc) | |||||||||||||||||||
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TK19A50W,S5X | 2.7800 | ![]() |
9378 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 18.5A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 40W (Tc) | |||||||||||||||||||
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TDTC123J,LM | 0.1800 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TDTC123 | 320 mW | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 500µA, 10mA | 80 @ 10mA, 5V | 250 MHz | 2.2 kOhms | ||||||||||||||||||||||
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TPCP8011,LF | 1.0900 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | PS-8 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 40 V | 5A (Ta) | 6V, 10V | 51.2mOhm @ 2.5A, 10V | 3V @ 1mA | 11.8 nC @ 10 V | ±20V | 505 pF @ 10 V | - | 940mW (Ta) | ||||||||||||||||||||
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2SA1244-Y(T6L1,NQ) | 0.9600 | ![]() |
8236 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1 W | PW-MOLD | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | 50 V | 5 A | 1µA (ICBO) | PNP | 400mV @ 150mA, 3A | 70 @ 1A, 1V | 60MHz | |||||||||||||||||||||||
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TK4P60D,RQ | 0.9200 | ![]() |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 600 V | 4A (Ta) | 10V | 1.7Ohm @ 2A, 10V | 4.4V @ 1mA | 12 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 100W (Tc) | |||||||||||||||||||
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TK065Z65Z,S1F | 7.8900 | ![]() |
4529 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tube | Active | 150°C | Through Hole | TO-247-4 | MOSFET (Metal Oxide) | TO-247-4L(T) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 650 V | 38A (Ta) | 10V | 65mOhm @ 19A, 10V | 4V @ 1.69mA | 62 nC @ 10 V | ±30V | 3650 pF @ 300 V | - | 270W (Tc) | |||||||||||||||||||
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TJ90S04M3L,LQ | 2.2100 | ![]() |
6460 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | 264-TJ90S04M3L,LQCT | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 40 V | 90A (Ta) | 4.5V, 10V | 4.3mOhm @ 45A, 10V | 2V @ 1mA | 172 nC @ 10 V | +10V, -20V | 7700 pF @ 10 V | - | 180W (Tc) | ||||||||||||||||||
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TK28E65W,S1X | 5.8100 | ![]() |
6456 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 27.6A (Ta) | 10V | 110mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | |||||||||||||||||||
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GT50JR22(STA1,E,S) | 4.7900 | ![]() |
2570 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | Standard | 230 W | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | 264-GT50JR22(STA1ES) | EAR99 | 8541.29.0095 | 25 | - | - | 600 V | 50 A | 100 A | 2.2V @ 15V, 50A | - | - | ||||||||||||||||||||
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TK5A80E,S4X | 1.4300 | ![]() |
50 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 800 V | 5A (Ta) | 10V | 2.4Ohm @ 2.5A, 10V | 4V @ 500µA | 20 nC @ 10 V | ±30V | 950 pF @ 25 V | - | 40W (Tc) | |||||||||||||||||||
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TK7A80W,S4X | 2.8900 | ![]() |
50 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 800 V | 6.5A (Ta) | 10V | 950mOhm @ 3.3A, 10V | 4V @ 280µA | 13 nC @ 10 V | ±20V | 700 pF @ 300 V | - | 35W (Tc) | |||||||||||||||||||
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TTA006B,Q | 0.6200 | ![]() |
103 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tray | Active | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | 1.5 W | TO-126N | download | 1 (Unlimited) | 264-TTA006BQ | EAR99 | 8541.29.0095 | 250 | 230 V | 1 A | 200nA (ICBO) | PNP | 1.5V @ 50mA, 500mA | 100 @ 100mA, 5V | 70MHz | |||||||||||||||||||||||
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TK8P65W,RQ | 1.9100 | ![]() |
8048 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 650 V | 7.8A (Ta) | 10V | 670mOhm @ 3.9A, 10V | 3.5V @ 300µA | 16 nC @ 10 V | ±30V | 570 pF @ 300 V | - | 80W (Tc) | |||||||||||||||||||
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TK090E65Z,S1X | 5.1200 | ![]() |
75 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 30A (Ta) | 10V | 90mOhm @ 15A, 10V | 4V @ 1.27mA | 47 nC @ 10 V | ±30V | 2780 pF @ 300 V | - | 230W (Tc) | |||||||||||||||||||
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TPH4R008QM,LQ | 1.5600 | ![]() |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-SOP Advance (5x5.75) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 80 V | 86A (Tc) | 6V, 10V | 4mOhm @ 43A, 10V | 3.5V @ 600µA | 57 nC @ 10 V | ±20V | 5300 pF @ 40 V | - | 960mW (Ta), 170W (Tc) | ||||||||||||||||||||
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TK5A60W5,S5VX | 1.5900 | ![]() |
7625 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 4.5A (Ta) | 10V | 950mOhm @ 2.3A, 10V | 4.5V @ 230µA | 11.5 nC @ 10 V | ±30V | 370 pF @ 300 V | - | 30W (Tc) | |||||||||||||||||||
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TK12J60U(F) | - | ![]() |
9902 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSII | Tray | Obsolete | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TK12J60 | MOSFET (Metal Oxide) | TO-3P(N) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 12A (Ta) | 10V | 400mOhm @ 6A, 10V | 5V @ 1mA | 14 nC @ 10 V | ±30V | 720 pF @ 10 V | - | 144W (Tc) | ||||||||||||||||||
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2SK3132(Q) | - | ![]() |
6621 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-3PL | 2SK3132 | MOSFET (Metal Oxide) | TO-3P(L) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 500 V | 50A (Ta) | 10V | 95mOhm @ 25A, 10V | 3.4V @ 1mA | 280 nC @ 10 V | ±30V | 11000 pF @ 10 V | - | 250W (Tc) | |||||||||||||||||||
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TK5R1P08QM,RQ | 1.4600 | ![]() |
6 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 80 V | 84A (Tc) | 6V, 10V | 5.1mOhm @ 42A, 10V | 3.5V @ 700µA | 56 nC @ 10 V | ±20V | 3980 pF @ 40 V | - | 104W (Tc) | |||||||||||||||||||
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TK7R0E08QM,S1X | 1.4500 | ![]() |
172 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSX-H | Tube | Active | 175°C | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 80 V | 64A (Tc) | 6V, 10V | 7mOhm @ 32A, 10V | 3.5V @ 500µA | 39 nC @ 10 V | ±20V | 2700 pF @ 40 V | - | 87W (Tc) |
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