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Transistors(2488)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TPH2R306NH1,LQ | 1.5700 |  |
8 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-SOP Advance (5x5.75) | - | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 136A (Tc) | 6.5V, 10V | 2.3mOhm @ 50A, 10V | 4V @ 1mA | 72 nC @ 10 V | ±20V | 6100 pF @ 30 V | - | 800mW (Ta), 170W (Tc) | |||||||||||||||||||||||
 |
TK370A60F,S4X(S | - | |
9742 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX | Bulk | Active | 150°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 15A (Ta) | 10V | 370mOhm @ 7.5A, 10V | 4V @ 2.04mA | 55 nC @ 10 V | ±30V | 2200 pF @ 300 V | - | 45W (Tc) | ||||||||||||||||||||||||
 |
TK2R4E08QM,S1X | 3.1800 | |
196 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSX-H | Tube | Active | 175°C | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 80 V | 120A (Tc) | 6V, 10V | 2.44mOhm @ 50A, 10V | 3.5V @ 2.2mA | 178 nC @ 10 V | ±20V | 13000 pF @ 40 V | - | 300W (Tc) | ||||||||||||||||||||||
 |
RN4988FE,LXHF(CT | 0.3800 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4988 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz, 200MHz | 22kOhms | 47kOhms | |||||||||||||||||||||||||
 |
2SA1586-GR,LXHF | 0.3300 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | - | Surface Mount | SC-70, SOT-323 | 200 mW | USM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 150 mA | 100nA (ICBO) | PNP | 300mV @ 10mA, 100mA | 200 @ 2mA, 6V | 80MHz | |||||||||||||||||||||||||||
 |
SSM6K810R,LXHF | 0.7000 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 175°C | Surface Mount | 6-SMD, Flat Leads | SSM6K810 | MOSFET (Metal Oxide) | 6-TSOP-F | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 100 V | 3.5A (Ta) | 4.5V, 10V | 69mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2 nC @ 4.5 V | ±20V | 430 pF @ 15 V | - | 1.5W (Ta) | ||||||||||||||||||||||
|
RN4985FE,LXHF(CT | 0.3800 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4985 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz, 200MHz | 2.2kOhms | 47kOhms | |||||||||||||||||||||||||
|
HN1C01FE-Y,LXHF | 0.3900 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | HN1C01 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 150mA | 100nA (ICBO) | 2 NPN (Dual) | 250mV @ 10mA, 100mA | 120 @ 2mA, 6V | 80MHz | ||||||||||||||||||||||||||
 |
RN4907,LXHF(CT | 0.4400 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4907 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz, 250MHz | 10kOhms | 47kOhms | |||||||||||||||||||||||||
 |
RN1311,LXHF | 0.3900 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN1311 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250 MHz | 10 kOhms | ||||||||||||||||||||||||||
 |
SSM3K15CT,L3F | - | |
3038 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | SC-101, SOT-883 | SSM3K15 | MOSFET (Metal Oxide) | CST3 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | N-Channel | 30 V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | ±20V | 7.8 pF @ 3 V | - | 100mW (Ta) | |||||||||||||||||||||||
 |
GT20N135SRA,S1E | 3.2800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C (TJ) | Through Hole | TO-247-3 | Standard | 312 W | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | 300V, 40A, 39Ohm, 15V | - | 1350 V | 40 A | 80 A | 2.4V @ 15V, 40A | -, 700µJ (off) | 185 nC | - | |||||||||||||||||||||||
 |
TW030N120C,S1F | 34.4500 | |
119 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 60A (Tc) | 18V | 40mOhm @ 30A, 18V | 5V @ 13mA | 82 nC @ 18 V | +25V, -10V | 2925 pF @ 800 V | - | 249W (Tc) | ||||||||||||||||||||||
|
TW083N65C,S1F | 12.7900 | |
175 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 30A (Tc) | 18V | 113mOhm @ 15A, 18V | 5V @ 600µA | 28 nC @ 18 V | +25V, -10V | 873 pF @ 400 V | - | 111W (Tc) | ||||||||||||||||||||||
 |
TK155U65Z,RQ | 3.4000 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerSFN | MOSFET (Metal Oxide) | TOLL | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 650 V | 18A (Ta) | 10V | 155mOhm @ 9A, 10V | 4V @ 730µA | 29 nC @ 10 V | ±30V | 1635 pF @ 300 V | - | 150W (Tc) | ||||||||||||||||||||||
|
TPH3R70APL1,LQ | 1.7100 | |
4727 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerTDFN | TPH3R70 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5.75) | download | 1 (Unlimited) | 5,000 | N-Channel | 100 V | 170A (Ta), 90A (Tc) | 4.5V, 10V | 3.7mOhm @ 45A, 10V | 2.5V @ 1mA | 67 nC @ 10 V | ±20V | 6300 pF @ 50 V | - | 3W (Ta), 210W (Tc) | ||||||||||||||||||||||||
|
SSM14N956L,EFF | 1.3700 | |
10 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 14-SMD, No Lead | SSM14 | MOSFET (Metal Oxide) | 1.33W (Ta) | TCSPED-302701 | - | ROHS3 Compliant | 1 (Unlimited) | 10,000 | 2 N-Channel | 12V | 20A (Ta) | 1.35mOhm @ 10A, 4.5V | 1.4V @ 1.57mA | 76nC @ 4V | - | - | |||||||||||||||||||||||||
 |
SSM6L807R,LF | 0.5200 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6L807 | MOSFET (Metal Oxide) | 1.4W (Ta) | 6-TSOP-F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N and P-Channel | 30V | 4A (Ta) | 39.1mOhm @ 2A, 4.5V | 1V @ 1mA | 3.2nC @ 4.5V, 6.74nC @ 4.5V | 310pF @ 15V, 480pF @ 10V | Standard | |||||||||||||||||||||||
 |
SSM6J825R,LF | 0.4400 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6J825 | MOSFET (Metal Oxide) | 6-TSOP-F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 4A (Ta) | 4V, 10V | 45mOhm @ 4A, 10V | 2V @ 250µA | 6.2 nC @ 4.5 V | +10V, -20V | 492 pF @ 10 V | - | 1.5W (Ta) | |||||||||||||||||||||
 |
SSM3K121TU | - | |
6715 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Active | 150°C | Surface Mount | 3-SMD, Flat Leads | MOSFET (Metal Oxide) | UFM | download | 264-SSM3K121TU | EAR99 | 8541.21.0095 | 1 | N-Channel | 20 V | 3.2A (Ta) | 1.5V, 4V | 48mOhm @ 2A, 4V | 1V @ 1mA | 5.9 nC @ 4 V | ±10V | 400 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||||||||
|
TW048Z65C,S1F | 14.4200 | |
120 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-4 | SiC (Silicon Carbide Junction Transistor) | TO-247-4L(X) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 40A (Tc) | 18V | 69mOhm @ 20A, 18V | 5V @ 1.6mA | 41 nC @ 18 V | +25V, -10V | 1362 pF @ 400 V | - | 132W (Tc) | ||||||||||||||||||||||
 |
TK12P60W,RVQ(S | - | |
2958 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK12P60 | MOSFET (Metal Oxide) | DPAK | download | RoHS Compliant | 1 (Unlimited) | TK12P60WRVQ(S | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 600 V | 11.5A (Ta) | 10V | 340mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 100W (Tc) | ||||||||||||||||||||
 |
TPH4R803PL,LQ | 0.7800 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPH4R803 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 48A (Tc) | 4.5V, 10V | 4.8mOhm @ 24A, 10V | 2.1V @ 200µA | 22 nC @ 10 V | ±20V | 1975 pF @ 15 V | - | 830mW (Ta), 69W (Tc) | ||||||||||||||||||||||
 |
TDTA114Y,LM | 0.1800 | |
8079 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TDTA114 | 320 mW | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 500µA, 10mA | 90 @ 5mA, 5V | 250 MHz | 10 kOhms | 10 kOhms | ||||||||||||||||||||||||
 |
SSM6G18NU,LF | 0.4900 | |
8410 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | SSM6G18 | MOSFET (Metal Oxide) | 6-µDFN (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 2A (Ta) | 1.5V, 4.5V | 112mOhm @ 1A, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | ±8V | 270 pF @ 10 V | Schottky Diode (Isolated) | 1W (Ta) | |||||||||||||||||||||
|
SSM3J15F,LF | 0.2300 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSM3J15 | MOSFET (Metal Oxide) | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 30 V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | 1.7V @ 100µA | ±20V | 9.1 pF @ 3 V | - | 200mW (Ta) | ||||||||||||||||||||||
 |
SSM6K406TU,LF | 0.5200 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6K406 | MOSFET (Metal Oxide) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 4.4A (Ta) | 4.5V, 10V | 25mOhm @ 2A, 10V | 2.5V @ 1mA | 12.4 nC @ 10 V | ±20V | 490 pF @ 15 V | - | 500mW (Ta) | |||||||||||||||||||||
|
SSM6J402TU,LF | 0.4900 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6J402 | MOSFET (Metal Oxide) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 30 V | 2A (Ta) | 4V, 10V | 117mOhm @ 1A, 10V | 2.6V @ 1mA | 5.3 nC @ 10 V | ±20V | 280 pF @ 15 V | - | 500mW (Ta) | |||||||||||||||||||||
|
SSM6J422TU,LF | 0.3700 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6J422 | MOSFET (Metal Oxide) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 4A (Ta) | 1.5V, 4.5V | 42.7mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | +6V, -8V | 840 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||||
|
SSM6K404TU,LF | 0.4800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6K404 | MOSFET (Metal Oxide) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 3A (Ta) | 1.5V, 4V | 55mOhm @ 2A, 4V | 1V @ 1mA | 5.9 nC @ 4 V | ±10V | 400 pF @ 10 V | - | 500mW (Ta) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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