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Transistors(2488)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TK39J60W,S1VQ | 10.7200 |  |
5 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TK39J60 | MOSFET (Metal Oxide) | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 600 V | 38.8A (Ta) | 10V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 270W (Tc) | |||||||||||||
 |
2SJ438,Q(M | - | |
8401 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-220-3 Full Pack | 2SJ438 | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1 | 5A (Tj) | ||||||||||||||||||||||||||
 |
TPCC8067-H,LQ(S | - | |
6291 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCC8067 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 9A (Ta) | 4.5V, 10V | 25mOhm @ 4.5A, 10V | 2.3V @ 100µA | 9.5 nC @ 10 V | ±20V | 690 pF @ 10 V | - | 700mW (Ta), 15W (Tc) | |||||||||||||
 |
SSM3J35AFS,LF | 0.2600 | |
15 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII | Tape & Reel (TR) | Active | 150°C | Surface Mount | SC-75, SOT-416 | SSM3J35 | MOSFET (Metal Oxide) | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 250mA (Ta) | 1.2V, 4.5V | 1.4Ohm @ 150mA, 4.5V | 1V @ 100µA | ±10V | 42 pF @ 10 V | - | 150mW (Ta) | ||||||||||||||
 |
RN2116MFV,L3F | 0.1800 | |
15 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN2116 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 500µA, 5mA | 50 @ 10mA, 5V | 4.7 kOhms | 10 kOhms | ||||||||||||||||||
 |
SSM3J168F,LF | 0.3700 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSM3J168 | MOSFET (Metal Oxide) | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 60 V | 400mA (Ta) | 4V, 10V | 1.9Ohm @ 100mA, 4.5V | 2V @ 1mA | 3 nC @ 10 V | +20V, -16V | 82 pF @ 10 V | - | 1.2W (Ta) | |||||||||||||
 |
2SA1020-Y(T6TOJ,FM | - | |
9874 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||
 |
SSM6J512NU,LF | 0.4800 | |
31 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | SSM6J512 | MOSFET (Metal Oxide) | 6-UDFNB (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 12 V | 10A (Ta) | 1.8V, 8V | 16.2mOhm @ 4A, 8V | 1V @ 1mA | 19.5 nC @ 4.5 V | ±10V | 1400 pF @ 6 V | - | 1.25W (Ta) | |||||||||||||
 |
TK12P60W,RVQ(S | - | |
2958 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK12P60 | MOSFET (Metal Oxide) | DPAK | download | RoHS Compliant | 1 (Unlimited) | TK12P60WRVQ(S | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 600 V | 11.5A (Ta) | 10V | 340mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 100W (Tc) | ||||||||||||
 |
TDTA114Y,LM | 0.1800 | |
8079 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TDTA114 | 320 mW | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 500µA, 10mA | 90 @ 5mA, 5V | 250 MHz | 10 kOhms | 10 kOhms | ||||||||||||||||
 |
SSM6G18NU,LF | 0.4900 | |
8410 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | SSM6G18 | MOSFET (Metal Oxide) | 6-µDFN (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 2A (Ta) | 1.5V, 4.5V | 112mOhm @ 1A, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | ±8V | 270 pF @ 10 V | Schottky Diode (Isolated) | 1W (Ta) | |||||||||||||
|
SSM3J15F,LF | 0.2300 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSM3J15 | MOSFET (Metal Oxide) | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 30 V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | 1.7V @ 100µA | ±20V | 9.1 pF @ 3 V | - | 200mW (Ta) | ||||||||||||||
 |
SSM6K406TU,LF | 0.5200 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6K406 | MOSFET (Metal Oxide) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 4.4A (Ta) | 4.5V, 10V | 25mOhm @ 2A, 10V | 2.5V @ 1mA | 12.4 nC @ 10 V | ±20V | 490 pF @ 15 V | - | 500mW (Ta) | |||||||||||||
 |
RN1711JE(TE85L,F) | 0.4100 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-553 | RN1711 | 100mW | ESV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250MHz | 10kOhms | - | ||||||||||||||||
 |
RN2908,LF(CT | 0.2700 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2908 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 22kOhms | 47kOhms | ||||||||||||||||
 |
RN1303,LF | 0.1800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN1303 | 100 mW | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250 MHz | 22 kOhms | 22 kOhms | ||||||||||||||||
|
HN1C01FU-Y,LF | 0.2600 | |
39 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | HN1C01 | 200mW | US6 | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 150mA | 100nA (ICBO) | 2 NPN (Dual) | 250mV @ 10mA, 100mA | 120 @ 2mA, 6V | 80MHz | |||||||||||||||||
|
HN1C03FU-B,LF | 0.3800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | HN1C03 | 200mW | US6 | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 20V | 300mA | 100nA (ICBO) | 2 NPN (Dual) | 100mV @ 3mA, 30A | 350 @ 4mA, 2V | 30MHz | |||||||||||||||||
|
SSM6J402TU,LF | 0.4900 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6J402 | MOSFET (Metal Oxide) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 30 V | 2A (Ta) | 4V, 10V | 117mOhm @ 1A, 10V | 2.6V @ 1mA | 5.3 nC @ 10 V | ±20V | 280 pF @ 15 V | - | 500mW (Ta) | |||||||||||||
|
SSM6J422TU,LF | 0.3700 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6J422 | MOSFET (Metal Oxide) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 4A (Ta) | 1.5V, 4.5V | 42.7mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | +6V, -8V | 840 pF @ 10 V | - | 1W (Ta) | |||||||||||||
|
SSM6K404TU,LF | 0.4800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6K404 | MOSFET (Metal Oxide) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 3A (Ta) | 1.5V, 4V | 55mOhm @ 2A, 4V | 1V @ 1mA | 5.9 nC @ 4 V | ±10V | 400 pF @ 10 V | - | 500mW (Ta) | |||||||||||||
 |
SSM6P39TU,LF | 0.4800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6P39 | MOSFET (Metal Oxide) | 500mW (Ta) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 P-Channel (Dual) | 20V | 1.5A (Ta) | 213mOhm @ 1A, 4V | 1V @ 1mA | 6.4nC @ 4V | 250pF @ 10V | Logic Level Gate, 1.8V Drive | |||||||||||||||
 |
TK49N65W5,S1F | 11.8200 | |
45 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-247-3 | TK49N65 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 49.2A (Ta) | 10V | 57mOhm @ 24.6A, 10V | 4.5V @ 2.5mA | 185 nC @ 10 V | ±30V | 6500 pF @ 300 V | - | 400W (Tc) | |||||||||||||
|
TPN7R504PL,LQ | 0.6100 | |
521 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPN7R504 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 40 V | 38A (Tc) | 4.5V, 10V | 7.5mOhm @ 19A, 10V | 2.4V @ 200µA | 24 nC @ 10 V | ±20V | 2040 pF @ 20 V | - | 610mW (Ta), 61W (Tc) | ||||||||||||||
 |
TPH1R204PB,L1Q | 1.5500 | |
31 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPH1R204 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 40 V | 150A (Tc) | 6V, 10V | 1.2mOhm @ 50A, 10V | 3V @ 500µA | 62 nC @ 10 V | ±20V | 5855 pF @ 20 V | - | 960mW (Ta), 132W (Tc) | ||||||||||||||
 |
TK3R2E06PL,S1X | 1.7700 | |
2131 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-220-3 | TK3R2E06 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 100A (Tc) | 4.5V, 10V | 3.2mOhm @ 50A, 10V | 2.5V @ 700µA | 71 nC @ 10 V | ±20V | 5000 pF @ 30 V | - | 168W (Tc) | |||||||||||||
|
TK3R9E10PL,S1X | 2.3700 | |
100 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-220-3 | TK3R9E10 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 100A (Tc) | 4.5V, 10V | 3.9mOhm @ 50A, 10V | 2.5V @ 1mA | 96 nC @ 10 V | ±20V | 6320 pF @ 50 V | - | 230W (Tc) | |||||||||||||
 |
TK22A65X5,S5X | 4.1200 | |
78 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK22A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 22A (Ta) | 10V | 160mOhm @ 11A, 10V | 4.5V @ 1.1mA | 50 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 45W (Tc) | |||||||||||||
|
RN1117(TE85L,F) | 0.3900 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1117 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 250 MHz | 10 kOhms | 4.7 kOhms | |||||||||||||||||
|
RN1407,LF | 0.1900 | |
904 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1407 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 10 kOhms | 47 kOhms |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
Wishlist (0 Items) 