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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Tolerance | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Speed | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Td (on/off) @ 25°C | Diode Type | Voltage - Peak Reverse (Max) | Current - Collector Cutoff (Max) | Voltage - Zener (Nom) (Vz) | Impedance (Max) (Zzt) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Capacitance Ratio | Capacitance Ratio Condition | Q @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RN4986FE,LXHF(CT | 0.3800 |  |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4986 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz, 200MHz | 4.7kOhms | 47kOhms | |||||||||||||||||||||||||||||||||||||||||
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1SS374(TE85L,F) | 0.3700 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 1SS374 | Schottky | SC-59 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 1 Pair Series Connection | 10 V | 100mA | 500 mV @ 100 mA | 20 µA @ 10 V | 125°C (Max) | ||||||||||||||||||||||||||||||||||||||||||
 |
1SV324TPH3F | 0.4200 | |
972 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-76, SOD-323 | 1SV324 | USC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | 12pF @ 4V, 1MHz | Single | 10 V | 4.3 | C1/C4 | - | |||||||||||||||||||||||||||||||||||||||||||
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RN2103,LXHF(CT | 0.3300 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN2103 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200 MHz | 22 kOhms | 22 kOhms | |||||||||||||||||||||||||||||||||||||||||
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2SA2154MFVGR,L3F | 0.1900 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-723 | 2SA2154 | 150 mW | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 150 mA | 100nA (ICBO) | PNP | 300mV @ 10mA, 100mA | 200 @ 2mA, 6V | 80MHz | |||||||||||||||||||||||||||||||||||||||||
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2SA1761,F(J | - | |
6832 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1761 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 3 A | 100nA (ICBO) | PNP | 500mV @ 75mA, 1.5A | 120 @ 100mA, 2V | 100MHz | ||||||||||||||||||||||||||||||||||||||||||
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2SD2206,T6F(J | - | |
1678 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SD2206 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 100 V | 2 A | 10µA (ICBO) | NPN | 1.5V @ 1mA, 1A | 2000 @ 1A, 2V | 100MHz | ||||||||||||||||||||||||||||||||||||||||||
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2SA1020-Y,T6F(J | - | |
9446 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||||||||||||||||||
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HN2D02FU,LF | 0.4000 | |
310 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | HN2D02 | Standard | US6 | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 3 Independent | 80 V | 80mA | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) | |||||||||||||||||||||||||||||||||||||||||
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SSM3J351R,LF | 0.4300 | |
162 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-23-3 Flat Leads | SSM3J351 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 60 V | 3.5A (Ta) | 4V, 10V | 134mOhm @ 1A, 10V | 2V @ 1mA | 15.1 nC @ 10 V | +10V, -20V | 660 pF @ 10 V | - | 2W (Ta) | |||||||||||||||||||||||||||||||||||||
 |
GT40WR21,Q | 11.0200 | |
7358 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tray | Active | 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | Standard | 375 W | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 100 | - | - | 1350 V | 40 A | 80 A | 5.9V @ 15V, 40A | - | - | ||||||||||||||||||||||||||||||||||||||||
 |
CRY75(TE85L,Q,M) | - | |
7359 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | ±10% | -40°C ~ 150°C | Surface Mount | SOD-123F | CRY75 | 700 mW | S-FLAT (1.6x3.5) | download | 1 (Unlimited) | EAR99 | 8541.10.0050 | 3,000 | 1 V @ 200 mA | 10 µA @ 4.5 V | 7.5 V | 30 Ohms | ||||||||||||||||||||||||||||||||||||||||||||
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HN1C01FU-Y,LXHF | 0.4100 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | - | Surface Mount | 6-TSSOP, SC-88, SOT-363 | HN1C01 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 150mA | 100nA (ICBO) | 2 NPN (Dual) | 250mV @ 10mA, 100mA | 120 @ 2mA, 6V | 80MHz | ||||||||||||||||||||||||||||||||||||||||||
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SSM6K217FE,LF | 0.3700 | |
37 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6K217 | MOSFET (Metal Oxide) | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | N-Channel | 40 V | 1.8A (Ta) | 1.8V, 8V | 195mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1 nC @ 4.2 V | ±12V | 130 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||||||||||||||||||||||
 |
TK8A10K3,S5Q | - | |
5357 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK8A10 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 8A (Ta) | 10V | 120mOhm @ 4A, 10V | 4V @ 1mA | 12.9 nC @ 10 V | ±20V | 530 pF @ 10 V | - | 18W (Tc) | |||||||||||||||||||||||||||||||||||||
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TK45P03M1,RQ(S | - | |
5821 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK45P03 | MOSFET (Metal Oxide) | DPAK | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 30 V | 45A (Ta) | 4.5V, 10V | 9.7mOhm @ 22.5A, 10V | 2.3V @ 200µA | 25 nC @ 10 V | ±20V | 1500 pF @ 10 V | - | - | |||||||||||||||||||||||||||||||||||||
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TPHR6503PL1,LQ | 2.2000 | |
24 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-SOP Advance (5x5.75) | - | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 150A (Tc) | 4.5V, 10V | 0.65mOhm @ 50A, 10V | 2.1V @ 1mA | 110 nC @ 10 V | ±20V | 10000 pF @ 15 V | - | 960mW (Ta), 210W (Tc) | |||||||||||||||||||||||||||||||||||||||
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TK25V60X5,LQ | 5.0300 | |
8257 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | 4-VSFN Exposed Pad | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 600 V | 25A (Ta) | 10V | 150mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | ||||||||||||||||||||||||||||||||||||||
 |
1SS187,LF | 0.2200 | |
4171 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 1SS187 | Standard | S-Mini | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 80 V | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) | 100mA | 4pF @ 0V, 1MHz | |||||||||||||||||||||||||||||||||||||||||
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2SD2206(TE6,F,M) | - | |
7464 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SD2206 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 100 V | 2 A | 10µA (ICBO) | NPN | 1.5V @ 1mA, 1A | 2000 @ 1A, 2V | 100MHz | ||||||||||||||||||||||||||||||||||||||||||
 |
1SS319(TE85L,F) | 0.4000 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-61AA | 1SS319 | Schottky | SC-61B | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 2 Independent | 40 V | 100mA | 600 mV @ 100 mA | 5 µA @ 40 V | 125°C (Max) | ||||||||||||||||||||||||||||||||||||||||||
 |
TP89R103NL,LQ | 0.6600 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | TP89R103 | MOSFET (Metal Oxide) | 8-SOP | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 15A (Tc) | 4.5V, 10V | 9.1mOhm @ 7.5A, 10V | 2.3V @ 100µA | 9.8 nC @ 10 V | ±20V | 820 pF @ 15 V | - | 1W (Tc) | |||||||||||||||||||||||||||||||||||||
 |
TK1P90A,LQ(CO | - | |
9799 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK1P90 | MOSFET (Metal Oxide) | PW-MOLD | download | RoHS Compliant | 1 (Unlimited) | TK1P90ALQ(CO | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 900 V | 1A (Ta) | 10V | 9Ohm @ 500mA, 10V | 4V @ 1mA | 13 nC @ 10 V | ±30V | 320 pF @ 25 V | - | 20W (Tc) | ||||||||||||||||||||||||||||||||||||
|
CLS02(TE16L,SQC,Q) | - | |
2120 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Surface Mount | L-FLAT™ | CLS02 | Schottky | L-FLAT™ (4x5.5) | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 550 mV @ 10 A | 1 mA @ 40 V | -40°C ~ 125°C | 10A | 420pF @ 10V, 1MHz | |||||||||||||||||||||||||||||||||||||||||||
|
TW015Z65C,S1F | 48.8100 | |
120 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-4 | SiC (Silicon Carbide Junction Transistor) | TO-247-4L(X) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 100A (Tc) | 18V | 22mOhm @ 50A, 18V | 5V @ 11.7mA | 128 nC @ 18 V | +25V, -10V | 4850 pF @ 400 V | - | 342W (Tc) | ||||||||||||||||||||||||||||||||||||||
 |
TK8Q60W,S1VQ | 2.4800 | |
7622 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | TK8Q60 | MOSFET (Metal Oxide) | I-Pak | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 75 | N-Channel | 600 V | 8A (Ta) | 10V | 500mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5 nC @ 10 V | ±30V | 570 pF @ 300 V | - | 80W (Tc) | |||||||||||||||||||||||||||||||||||||
|
RN2905,LF(CT | 0.2600 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2905 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 2.2kOhms | 47kOhms | ||||||||||||||||||||||||||||||||||||||||
|
RN1407,LXHF | 0.3400 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1407 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 10 kOhms | 47 kOhms | |||||||||||||||||||||||||||||||||||||||||
 |
RN1101ACT(TPL3) | - | |
6910 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-101, SOT-883 | RN1101 | 100 mW | CST3 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 50 V | 80 mA | 500nA | NPN - Pre-Biased | 150mV @ 500µA, 5mA | 30 @ 10mA, 5V | 4.7 kOhms | 4.7 kOhms | ||||||||||||||||||||||||||||||||||||||||||
 |
2SA1586-Y,LXHF | 0.3300 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | - | Surface Mount | SC-70, SOT-323 | 200 mW | USM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 150 mA | 100nA (ICBO) | PNP | 300mV @ 10mA, 100mA | 120 @ 2mA, 6V | 80MHz |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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