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Email: sales@sic-components.com
Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Speed | FET Type | Current - Max | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Diode Type | Voltage - Peak Reverse (Max) | Current - Collector Cutoff (Max) | Resistance @ If, F | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
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SSM3J140TU,LXHF | 0.5500 | ![]() |
126 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 3-SMD, Flat Leads | MOSFET (Metal Oxide) | UFM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 4.4A (Ta) | 1.5V, 4.5V | 25.8mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8 nC @ 4.5 V | +6V, -8V | 1800 pF @ 10 V | - | 500mW (Ta) | ||||||||||||||||||||||||||||||||||
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SSM3J143TU,LXHF | 0.4600 | ![]() |
32 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 3-SMD, Flat Leads | MOSFET (Metal Oxide) | UFM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 5.5A (Ta) | 1.5V, 4.5V | 29.8mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | +6V, -8V | 840 pF @ 10 V | - | 500mW (Ta) | ||||||||||||||||||||||||||||||||||
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TPH1R306PL1,LQ | 2.4200 | ![]() |
9668 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-SOP Advance (5x5.75) | - | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 100A (Tc) | 4.5V, 10V | 1.34mOhm @ 50A, 10V | 2.5V @ 1mA | 91 nC @ 10 V | ±20V | 8100 pF @ 30 V | - | 960mW (Ta), 210W (Tc) | ||||||||||||||||||||||||||||||||||
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TK3R3E08QM,S1X | 2.3500 | ![]() |
82 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSX-H | Tube | Active | 175°C | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 80 V | 120A (Tc) | 6V, 10V | 3.3mOhm @ 50A, 10V | 3.5V @ 1.3mA | 110 nC @ 10 V | ±20V | 7670 pF @ 40 V | - | 230W (Tc) | |||||||||||||||||||||||||||||||||
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TK6R8A08QM,S4X | 1.2100 | ![]() |
40 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSX-H | Tube | Active | 175°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 80 V | 58A (Tc) | 6V, 10V | 6.8mOhm @ 29A, 10V | 3.5V @ 500µA | 39 nC @ 10 V | ±20V | 2700 pF @ 40 V | - | 41W (Tc) | |||||||||||||||||||||||||||||||||
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RN1911,LXHF(CT | 0.3600 | ![]() |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN1911 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250MHz | 10kOhms | - | ||||||||||||||||||||||||||||||||||||
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RN1909,LXHF(CT | 0.3500 | ![]() |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN1909 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250MHz | 47kOhms | 22kOhms | ||||||||||||||||||||||||||||||||||||
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RN2908,LXHF(CT | 0.4400 | ![]() |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2908 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 22kOhms | 47kOhms | ||||||||||||||||||||||||||||||||||||
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RN1908,LXHF(CT | 0.3600 | ![]() |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN1908 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 22kOhms | 47kOhms | ||||||||||||||||||||||||||||||||||||
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1SS315[U/D] | - | ![]() |
3369 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | SC-76, SOD-323 | USC | download | 1 (Unlimited) | 264-1SS315[U/D]TR | EAR99 | 8541.10.0070 | 3,000 | 30 mA | 0.06pF @ 200mV, 1MHz | Schottky - Single | 5V | - | |||||||||||||||||||||||||||||||||||||||||
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RN2911,LXHF(CT | 0.4400 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2911 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200MHz | 10kOhms | - | ||||||||||||||||||||||||||||||||||||
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RN1902,LXHF(CT | 0.3600 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN1902 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250MHz | 10kOhms | 10kOhms | ||||||||||||||||||||||||||||||||||||
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RN4984,LXHF(CT | 0.4400 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4984 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz, 200MHz | 47kOhms | 47kOhms | ||||||||||||||||||||||||||||||||||||
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RN4987FE,LXHF(CT | 0.3800 | ![]() |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4987 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz, 200MHz | 10kOhms | 47kOhms | ||||||||||||||||||||||||||||||||||||
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RN4905FE,LXHF(CT | 0.3800 | ![]() |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4905 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz, 250MHz | 2.2kOhms | 47kOhms | ||||||||||||||||||||||||||||||||||||
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SSM3J66MFV,L3XHF | 0.3900 | ![]() |
14 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-723 | MOSFET (Metal Oxide) | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | P-Channel | 20 V | 800mA (Ta) | 1.2V, 4.5V | 390mOhm @ 800mA, 4.5V | 1V @ 1mA | 1.6 nC @ 4.5 V | +6V, -8V | 100 pF @ 10 V | - | 150mW (Ta) | ||||||||||||||||||||||||||||||||||
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RN4902FE,LXHF(CT | 0.3800 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4902 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200MHz, 250MHz | 10kOhms | 10kOhms | ||||||||||||||||||||||||||||||||||||
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RN2905FE,LXHF(CT | 0.3800 | ![]() |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN2905 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 2.2kOhms | 47kOhms | ||||||||||||||||||||||||||||||||||||
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GT30N135SRA,S1E | 3.7700 | ![]() |
3270 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C (TJ) | Through Hole | TO-247-3 | Standard | 348 W | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | 300V, 60A, 39Ohm, 15V | - | 1350 V | 60 A | 120 A | 2.6V @ 15V, 60A | -, 1.3mJ (off) | 270 nC | - | ||||||||||||||||||||||||||||||||||
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TW140N120C,S1F | 11.3700 | ![]() |
10 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 20A (Tc) | 18V | 182mOhm @ 10A, 18V | 5V @ 1mA | 24 nC @ 18 V | +25V, -10V | 691 pF @ 800 V | - | 107W (Tc) | |||||||||||||||||||||||||||||||||
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TW107N65C,S1F | 9.6200 | ![]() |
96 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 20A (Tc) | 18V | 145mOhm @ 10A, 18V | 5V @ 1.2mA | 21 nC @ 18 V | +25V, -10V | 600 pF @ 400 V | - | 76W (Tc) | |||||||||||||||||||||||||||||||||
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TW015N120C,S1F | 68.0400 | ![]() |
2613 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 100A (Tc) | 18V | 20mOhm @ 50A, 18V | 5V @ 11.7mA | 158 nC @ 18 V | +25V, -10V | 6000 pF @ 800 V | - | 431W (Tc) | |||||||||||||||||||||||||||||||||
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2SC2873-Y(TE12L,ZC | 0.4200 | ![]() |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-243AA | 500 mW | PW-MINI | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1,000 | 50 V | 2 A | 100nA (ICBO) | NPN | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 120MHz | |||||||||||||||||||||||||||||||||||||
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TPW2R508NH,L1Q | 2.8100 | ![]() |
1661 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerWDFN | MOSFET (Metal Oxide) | 8-DSOP Advance | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 75 V | 150A (Ta) | 10V | 2.5mOhm @ 50A, 10V | 4V @ 1mA | 72 nC @ 10 V | ±20V | 6000 pF @ 37.5 V | - | 800mW (Ta), 142W (Tc) | ||||||||||||||||||||||||||||||||||
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TPH2R805PL,LQ | 1.2000 | ![]() |
9118 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 45 V | 100A (Tc) | 4.5V, 10V | 2.8mOhm @ 50A, 10V | 2.4V @ 500µA | 73 nC @ 10 V | ±20V | 5175 pF @ 22.5 V | - | 830mW (Ta), 116W (Tc) | ||||||||||||||||||||||||||||||||||
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TK25A20D,S5X | 1.7900 | ![]() |
40 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 200 V | 25A (Ta) | 10V | 70mOhm @ 12.5A, 10V | 3.5V @ 1mA | 60 nC @ 10 V | ±20V | 2550 pF @ 100 V | - | 45W (Tc) | |||||||||||||||||||||||||||||||||
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TK22V65X5,LQ | 5.6600 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 4-VSFN Exposed Pad | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 650 V | 22A (Ta) | 10V | 170mOhm @ 11A, 10V | 4.5V @ 1.1mA | 50 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | |||||||||||||||||||||||||||||||||
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GT40RR21(STA1,E | 3.6500 | ![]() |
1369 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | GT40RR21 | Standard | 230 W | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | 280V, 40A, 10Ohm, 20V | 600 ns | - | 1200 V | 40 A | 200 A | 2.8V @ 15V, 40A | -, 540µJ (off) | - | |||||||||||||||||||||||||||||||||
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SSM3J16FU(TE85L,F) | 0.3700 | ![]() |
9188 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | SC-70, SOT-323 | MOSFET (Metal Oxide) | USM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 100mA (Ta) | 1.5V, 4V | 8Ohm @ 10mA, 4V | 1.1V @ 100µA | ±10V | 11 pF @ 3 V | - | 150mW (Ta) | ||||||||||||||||||||||||||||||||||
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CUHS20S60,H3F | 0.3600 | ![]() |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 2-SMD, Flat Lead | Schottky | US2H | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 530 mV @ 2 A | 650 µA @ 60 V | 150°C | 2A | 290pF @ 0V, 1MHz |
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