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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2SK2995(F) | - |  |
9943 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | 2SK2995 | MOSFET (Metal Oxide) | TO-3P(N)IS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 250 V | 30A (Ta) | 10V | 68mOhm @ 15A, 10V | 3.5V @ 1mA | 132 nC @ 10 V | ±20V | 5400 pF @ 10 V | - | 90W (Tc) | |||||||||||||||||||||||
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RN1112CT(TPL3) | - | |
9061 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-101, SOT-883 | RN1112 | 50 mW | CST3 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 20 V | 50 mA | 100nA (ICBO) | NPN - Pre-Biased | 150mV @ 250µA, 5mA | 300 @ 1mA, 5V | 22 kOhms | ||||||||||||||||||||||||||||
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TK10A60W,S4VX | 2.7800 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK10A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 9.7A (Ta) | 10V | 380mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | - | 30W (Tc) | ||||||||||||||||||||||
 |
MT3S113(TE85L,F) | 0.7000 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MT3S113 | 800mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 11.8dB | 5.3V | 100mA | NPN | 200 @ 30mA, 5V | 12.5GHz | 1.45dB @ 1GHz | ||||||||||||||||||||||||||
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2SA1428-O,T2WNLF(J | - | |
6056 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | SC-71 | 2SA1428 | 900 mW | MSTM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | |||||||||||||||||||||||||||
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2SD2695(T6CANO,F,M | - | |
9371 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SD2695 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 60 V | 2 A | 10µA (ICBO) | NPN | 1.5V @ 1mA, 1A | 2000 @ 1A, 2V | 100MHz | |||||||||||||||||||||||||||
 |
SSM6J503NU,LF | 0.4600 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | SSM6J503 | MOSFET (Metal Oxide) | 6-UDFNB (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 6A (Ta) | 1.5V, 4.5V | 32.4mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8 nC @ 10 V | ±8V | 840 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||||||||
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RN2118(T5L,F,T) | - | |
7756 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-75, SOT-416 | RN2118 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200 MHz | 47 kOhms | 10 kOhms | ||||||||||||||||||||||||||
|
RN2106(T5L,F,T) | - | |
3234 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN2106 | 100 mW | SSM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200 MHz | 4.7 kOhms | 47 kOhms | |||||||||||||||||||||||||
 |
XPW6R30ANB,L1XHQ | 1.9800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | XPW6R30 | MOSFET (Metal Oxide) | 8-DSOP Advance | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 100 V | 45A (Ta) | 6V, 10V | 6.3mOhm @ 22.5A, 10V | 3.5V @ 500µA | 52 nC @ 10 V | ±20V | 3240 pF @ 10 V | - | 960mW (Ta), 132W (Tc) | |||||||||||||||||||||||
 |
RN1968(TE85L,F) | 0.4700 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN1968 | 200mW | US6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 22kOhms | 47kOhms | |||||||||||||||||||||||||
|
2SA1962-O(Q) | - | |
6598 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tray | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | 2SA1962 | 130 W | TO-3P(N) | download | RoHS Compliant | Not Applicable | EAR99 | 8541.29.0075 | 50 | 230 V | 15 A | 5µA (ICBO) | PNP | 3V @ 800mA, 8A | 80 @ 1A, 5V | 30MHz | ||||||||||||||||||||||||||
|
2SC2235-Y,T6F(J | - | |
7291 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2235 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | NPN | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | |||||||||||||||||||||||||||
|
RN1971TE85LF | 0.0618 | |
6883 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN1971 | 200mW | US6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250MHz | 10kOhms | - | |||||||||||||||||||||||||
|
2SA949-Y,ONK-1F(J | - | |
3985 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA949 | 800 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 150 V | 50 mA | 100nA (ICBO) | PNP | 800mV @ 1mA, 10A | 70 @ 10mA, 5V | 120MHz | |||||||||||||||||||||||||||
 |
RN4907,LF | 0.2800 | |
3821 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4907 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 10kOhms | 47kOhms | |||||||||||||||||||||||||
 |
TTA003,L1NQ(O | 0.6900 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TTA003 | 10 W | PW-MOLD | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0075 | 2,000 | 80 V | 3 A | 100nA (ICBO) | PNP | 500mV @ 100mA, 1A | 100 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||
 |
RN2301,LXHF | 0.3900 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN2301 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 200 MHz | 4.7 kOhms | 4.7 kOhms | ||||||||||||||||||||||||||
 |
TK090Z65Z,S1F | 6.3200 | |
25 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tube | Active | 150°C | Through Hole | TO-247-4 | MOSFET (Metal Oxide) | TO-247-4L(T) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 650 V | 30A (Ta) | 10V | 90mOhm @ 15A, 10V | 4V @ 1.27mA | 47 nC @ 10 V | ±30V | 2780 pF @ 300 V | - | 230W (Tc) | |||||||||||||||||||||||
|
RN2402S,LF(D | - | |
4226 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2402 | 200 mW | S-Mini | download | 1 (Unlimited) | RN2402SLF(D | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200 MHz | 10 kOhms | 10 kOhms | |||||||||||||||||||||||||
 |
TPC8228-H,LQ | - | |
6012 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | TPC8228 | MOSFET (Metal Oxide) | 1.5W (Ta) | 8-SOP | download | 264-TPC8228-HLQTR | EAR99 | 8541.29.0095 | 2,500 | 2 N-Channel (Dual) | 60V | 3.8A | 57mOhm @ 1.9A, 10V | 2.3V @ 100µA | 11nC @ 10V | 640pF @ 10V | - | |||||||||||||||||||||||||
 |
RN4984FE,LF(CT | 0.2800 | |
70 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4984 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 47kOhms | 47kOhms | |||||||||||||||||||||||||
 |
CCS15S30,L3QUF | - | |
1834 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 2-SMD, No Lead | CCS15S30 | Schottky | CST2C | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 10,000 | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | 400 mV @ 1 A | 500 µA @ 30 V | 125°C (Max) | 1.5A | 200pF @ 0V, 1MHz | |||||||||||||||||||||||||||
|
TTD1415B,S4X(S | - | |
3496 | 0.00000000 | Toshiba Semiconductor and Storage | * | Tube | Active | TTD1415 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | ||||||||||||||||||||||||||||||||||||||
|
2SC2235-O(T6FJT,AF | - | |
2992 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2235 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | NPN | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | |||||||||||||||||||||||||||
|
2SC3668-Y,T2F(M | - | |
8734 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | SC-71 | 2SC3668 | 1 W | MSTM | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | NPN | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | |||||||||||||||||||||||||||
|
RN2415,LXHF | 0.3400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2415 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200 MHz | 2.2 kOhms | 10 kOhms | ||||||||||||||||||||||||||
 |
TK9P65W,RQ | 0.8760 | |
2610 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK9P65 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 650 V | 9.3A (Ta) | 10V | 560mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | - | 80W (Tc) | ||||||||||||||||||||||
|
2SD2257(CANO,A,Q) | - | |
7754 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SD2257 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1 | 100 V | 3 A | 10µA (ICBO) | NPN | 1.5V @ 1.5mA, 1.5A | 2000 @ 2A, 2V | - | |||||||||||||||||||||||||||
|
2SB1495,Q(J | - | |
9035 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SB1495 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1 | 100 V | 3 A | 10µA (ICBO) | PNP | 1.5V @ 1.5mA, 1.5A | 2000 @ 2A, 2V | - |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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