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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SSM3J145TU,LF | 0.3800 |  |
7 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 3-SMD, Flat Lead | SSM3J145 | MOSFET (Metal Oxide) | UFM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 3A (Ta) | 1.5V, 4.5V | 103mOhm @ 1A, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | +6V, -8V | 270 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||||||||
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CLH05(T6L,NKOD,Q) | - | |
1913 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Surface Mount | L-FLAT™ | CLH05 | Standard | L-FLAT™ (4x5.5) | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | 980 mV @ 5 A | 35 ns | 10 µA @ 200 V | -40°C ~ 150°C | 5A | - | ||||||||||||||||||||||||||||
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RN1421TE85LF | 0.4200 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1421 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 800 mA | 500nA | NPN - Pre-Biased | 250mV @ 2mA, 50mA | 60 @ 100mA, 1V | 300 MHz | 1 kOhms | 1 kOhms | ||||||||||||||||||||||||||
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2SC4793(LBSAN,F,M) | - | |
3354 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SC4793 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 230 V | 1 A | 1µA (ICBO) | NPN | 1.5V @ 50mA, 500mA | 100 @ 100mA, 5V | 100MHz | ||||||||||||||||||||||||||||
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2SD2257(Q,M) | - | |
9334 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SD2257 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1 | 100 V | 3 A | 10µA (ICBO) | NPN | 1.5V @ 1.5mA, 1.5A | 2000 @ 2A, 2V | - | ||||||||||||||||||||||||||||
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TK16A60W,S4X | 2.3741 | |
4531 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | Through Hole | TO-220-3 Full Pack | TK16A60 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | TK16A60WS4X | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 40 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 40W (Tc) | |||||||||||||||||||||||
 |
TK1R4F04PB,LXGQ | 2.7300 | |
885 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TK1R4F04 | MOSFET (Metal Oxide) | TO-220SM(W) | download | 3 (168 Hours) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 40 V | 160A (Ta) | 6V, 10V | 1.9mOhm @ 80A, 6V | 3V @ 500µA | 103 nC @ 10 V | ±20V | 5500 pF @ 10 V | - | 205W (Tc) | ||||||||||||||||||||||||
 |
RN1673(TE85L,F) | - | |
6017 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN1673 | 300mW | US6 | - | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | - | 47kOhms | - | |||||||||||||||||||||||||||
 |
TPH3R003PL,LQ | 0.9900 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | 8-PowerVDFN | TPH3R003 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 88A (Tc) | 4.5V, 10V | 4.2mOhm @ 44A, 4.5V | 2.1V @ 300µA | 50 nC @ 10 V | ±20V | 3825 pF @ 15 V | - | 90W (Tc) | |||||||||||||||||||||||
 |
CRS10I30A(TE85L,QM | 0.3800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-123F | CRS10I30 | Schottky | S-FLAT (1.6x3.5) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 390 mV @ 700 mA | 60 µA @ 30 V | 150°C | 1A | 50pF @ 10V, 1MHz | ||||||||||||||||||||||||||||
 |
TK40E06N1,S1X | 1.0400 | |
9091 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK40E06 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 40A (Ta) | 10V | 10.4mOhm @ 20A, 10V | 4V @ 300µA | 23 nC @ 10 V | ±20V | 1700 pF @ 30 V | - | 67W (Tc) | |||||||||||||||||||||||
|
2SB1495,Q(J | - | |
9035 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SB1495 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1 | 100 V | 3 A | 10µA (ICBO) | PNP | 1.5V @ 1.5mA, 1.5A | 2000 @ 2A, 2V | - | ||||||||||||||||||||||||||||
 |
RN4603(TE85L,F) | 0.3800 | |
7481 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74, SOT-457 | RN4603 | 300mW | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200MHz, 250MHz | 22kOhms | 22kOhms | ||||||||||||||||||||||||||
 |
2SA949-Y(T6JVC1,FM | - | |
6789 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA949 | 800 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 150 V | 50 mA | 100nA (ICBO) | PNP | 800mV @ 1mA, 10A | 70 @ 10mA, 5V | 120MHz | ||||||||||||||||||||||||||||
|
2SA1020-Y(T6TR1,AF | - | |
8896 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||||
 |
CUS05S40,H3F | 0.3200 | |
105 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-76, SOD-323 | CUS05S40 | Schottky | USC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 350 mV @ 100 mA | 30 µA @ 10 V | 125°C (Max) | 500mA | 42pF @ 0V, 1MHz | ||||||||||||||||||||||||||||
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2SA965-Y,F(J | - | |
3433 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA965 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | PNP | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | ||||||||||||||||||||||||||||
|
2SC2229-O(TE6,F,M) | - | |
6227 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2229 | 800 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 150 V | 50 mA | 100nA (ICBO) | NPN | 500mV @ 1mA, 10mA | 70 @ 10mA, 5V | 120MHz | ||||||||||||||||||||||||||||
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RN1110,LXHF(CT | 0.3300 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1110 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250 MHz | 4.7 kOhms | ||||||||||||||||||||||||||||
 |
RN2710,LF | 0.3000 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | RN2710 | 200mW | USV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200MHz | 4.7kOhms | - | ||||||||||||||||||||||||||
 |
DSF01S30SC,L3F | - | |
4466 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | 0201 (0603 Metric) | DSF01S30 | Schottky | SC2 | download | RoHS Compliant | 1 (Unlimited) | DSF01S30SCL3F | EAR99 | 8541.10.0070 | 10,000 | Small Signal =< 200mA (Io), Any Speed | 30 V | 500 mV @ 100 mA | 50 µA @ 30 V | 125°C (Max) | 100mA | 9.3pF @ 0V, 1MHz | |||||||||||||||||||||||||||
|
CMH08(TE12L,Q,M) | - | |
9412 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOD-128 | CMH08 | Standard | M-FLAT (2.4x3.8) | download | RoHS Compliant | CMH08(TE12LQM) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | 1.3 V @ 2 A | 100 ns | 10 µA @ 400 V | -40°C ~ 150°C | 2A | - | |||||||||||||||||||||||||||
 |
HN2D02FU,LF | 0.4000 | |
310 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | HN2D02 | Standard | US6 | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 3 Independent | 80 V | 80mA | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) | |||||||||||||||||||||||||||
|
CRG01(TE85L,Q,M) | - | |
9551 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOD-123F | CRG01 | Standard | S-FLAT (1.6x3.5) | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Standard Recovery >500ns, > 200mA (Io) | 100 V | 1.1 V @ 700 mA | 10 µA @ 100 V | -40°C ~ 150°C | 700mA | - | ||||||||||||||||||||||||||||
 |
SSM5H12TU(TE85L,F) | - | |
5864 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 6-SMD (5 Leads), Flat Lead | SSM5H12 | MOSFET (Metal Oxide) | UFV | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 1.9A (Ta) | 1.8V, 4V | 133mOhm @ 1A, 4V | 1V @ 1mA | 1.9 nC @ 4 V | ±12V | 123 pF @ 15 V | Schottky Diode (Isolated) | 500mW (Ta) | ||||||||||||||||||||||||
 |
SSM6L39TU,LF | 0.4600 | |
20 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | SSM6L39 | MOSFET (Metal Oxide) | 500mW | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N and P-Channel | 20V | 800mA | 143mOhm @ 600MA, 4V | 1V @ 1mA | - | 268pF @ 10V | Logic Level Gate, 1.8V Drive | |||||||||||||||||||||||||
|
2SA1972,F(J | - | |
7950 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1972 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 400 V | 500 mA | 10µA (ICBO) | PNP | 1V @ 10mA, 100mA | 140 @ 20mA, 5V | 35MHz | ||||||||||||||||||||||||||||
 |
2SA1162-GR,LXHF | 0.3900 | |
454 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 150 mA | 100nA (ICBO) | PNP | 300mV @ 10mA, 100mA | 200 @ 2mA, 6V | 80MHz | |||||||||||||||||||||||||||||
|
TPH3R10AQM,LQ | 1.7000 | |
10 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerTDFN | TPH3R10 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5.75) | download | 1 (Unlimited) | 5,000 | N-Channel | 100 V | 180A (Ta), 120A (Tc) | 6V, 10V | 3.1mOhm @ 50A, 10V | 3.5V @ 500µA | 83 nC @ 10 V | ±20V | 7400 pF @ 50 V | - | 3W (Ta), 210W (Tc) | ||||||||||||||||||||||||||
|
TPH7R204PL,LQ | 0.6500 | |
22 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | 8-PowerVDFN | TPH7R204 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 40 V | 48A (Tc) | 4.5V, 10V | 9.7mOhm @ 15A, 4.5V | 2.4V @ 200µA | 24 nC @ 10 V | ±20V | 2040 pF @ 20 V | - | 69W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
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