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Email: sales@sic-components.com
Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Tolerance | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Speed | FET Type | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Diode Type | Voltage - Peak Reverse (Max) | Current - Collector Cutoff (Max) | Voltage - Zener (Nom) (Vz) | Impedance (Max) (Zzt) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) | Capacitance Ratio | Capacitance Ratio Condition | Q @ Vr, F |
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TK4A55D(STA4,Q,M) | - | ![]() |
6988 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK4A55 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 550 V | 4A (Ta) | 10V | 1.88Ohm @ 2A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 490 pF @ 25 V | - | 35W (Tc) | ||||||||||||||||||||||||||||||||
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TK17A80W,S4X | 3.8400 | ![]() |
28 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK17A80 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 800 V | 17A (Ta) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 850µA | 32 nC @ 10 V | ±20V | 2050 pF @ 300 V | - | 45W (Tc) | ||||||||||||||||||||||||||||||||
CRZ27(TE85L,Q,M) | 0.4900 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | ±10% | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | CRZ27 | 700 mW | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0050 | 3,000 | 1 V @ 200 mA | 10 µA @ 19 V | 27 V | 30 Ohms | |||||||||||||||||||||||||||||||||||||||
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1SS308(TE85L,F | 0.4300 | ![]() |
15 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74A, SOT-753 | 1SS308 | Standard | SMV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 4 Common Anode | 80 V | 100mA | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) | ||||||||||||||||||||||||||||||||||||
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TW140N120C,S1F | 11.3700 | ![]() |
10 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 20A (Tc) | 18V | 182mOhm @ 10A, 18V | 5V @ 1mA | 24 nC @ 18 V | +25V, -10V | 691 pF @ 800 V | - | 107W (Tc) | |||||||||||||||||||||||||||||||||
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TPN1200APL,L1Q | 0.8500 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 100 V | 40A (Tc) | 4.5V, 10V | 11.5mOhm @ 20A, 10V | 2.5V @ 300µA | 24 nC @ 10 V | ±20V | 1855 pF @ 50 V | - | 630mW (Ta), 104W (Tc) | |||||||||||||||||||||||||||||||||
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2SC4915-Y,LF | 0.4400 | ![]() |
9 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-75, SOT-416 | 2SC4915 | 100mW | SSM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 17dB ~ 23dB | 30V | 20mA | NPN | 100 @ 1mA, 6V | 550MHz | 2.3dB ~ 5dB @ 100MHz | ||||||||||||||||||||||||||||||||||||
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TRS16N65FB,S1Q | 6.0900 | ![]() |
238 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-247-3 | TRS16N65 | SiC (Silicon Carbide) Schottky | TO-247 | - | 1 (Unlimited) | 264-TRS16N65FBS1Q | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 8A (DC) | 1.6 V @ 8 A | 0 ns | 40 µA @ 650 V | 175°C | ||||||||||||||||||||||||||||||||||||
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RN4983,LXHF(CT | 0.4400 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4983 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250MHz, 200MHz | 22kOhms | 22kOhms | ||||||||||||||||||||||||||||||||||||
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RN2908,LXHF(CT | 0.4400 | ![]() |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2908 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 22kOhms | 47kOhms | ||||||||||||||||||||||||||||||||||||
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RN1421TE85LF | 0.4200 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1421 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 800 mA | 500nA | NPN - Pre-Biased | 250mV @ 2mA, 50mA | 60 @ 100mA, 1V | 300 MHz | 1 kOhms | 1 kOhms | |||||||||||||||||||||||||||||||||||
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HN1D02F(TE85L,F) | 0.4700 | ![]() |
9292 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74, SOT-457 | HN1D02 | Standard | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 2 Pair Common Cathode | 80 V | 100mA | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | -55°C ~ 125°C | ||||||||||||||||||||||||||||||||||||
TTA004B,Q | 0.4500 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Active | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TTA004 | 10 W | TO-126N | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0075 | 250 | 160 V | 1.5 A | 100nA (ICBO) | PNP | 500mV @ 50mA, 500mA | 140 @ 100mA, 5V | 100MHz | |||||||||||||||||||||||||||||||||||||
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TK2P90E,RQ | 1.1900 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 900 V | 2A (Ta) | 10V | 5.9Ohm @ 1A, 10V | 4V @ 200µA | 12 nC @ 10 V | ±30V | 500 pF @ 25 V | - | 80W (Tc) | |||||||||||||||||||||||||||||||||
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RN2109ACT(TPL3) | 0.3400 | ![]() |
9 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-101, SOT-883 | RN2109 | 100 mW | CST3 | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 50 V | 80 mA | 500nA | PNP - Pre-Biased | 150mV @ 250µA, 5mA | 70 @ 10mA, 5V | 47 kOhms | 22 kOhms | ||||||||||||||||||||||||||||||||||||
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TPCA8109(TE12L1,V | - | ![]() |
3844 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerVDFN | TPCA8109 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | - | 1 (Unlimited) | 264-TPCA8109(TE12L1VTR | EAR99 | 8541.29.0095 | 5,000 | P-Channel | 30 V | 24A (Ta) | 4.5V, 10V | 9mOhm @ 12A, 10V | 2V @ 500µA | 56 nC @ 10 V | +20V, -25V | 2400 pF @ 10 V | - | 1.6W (Ta), 30W (Tc) | ||||||||||||||||||||||||||||||||
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SSM6K518NU,LF | 0.4100 | ![]() |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-WDFN Exposed Pad | SSM6K518 | MOSFET (Metal Oxide) | 6-UDFNB (2x2) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 20 V | 6A (Ta) | 1.5V, 4.5V | 33mOhm @ 4A, 4.5V | 1V @ 1mA | 3.6 nC @ 4.5 V | ±8V | 410 pF @ 10 V | - | 1.25W (Ta) | ||||||||||||||||||||||||||||||||
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2SJ380(F) | - | ![]() |
1045 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SJ380 | MOSFET (Metal Oxide) | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | P-Channel | 100 V | 12A (Ta) | 4V, 10V | 210mOhm @ 6A, 10V | 2V @ 1mA | 48 nC @ 10 V | ±20V | 1100 pF @ 10 V | - | 35W (Tc) | |||||||||||||||||||||||||||||||||
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2SK3309(TE24L,Q) | - | ![]() |
7505 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2SK3309 | MOSFET (Metal Oxide) | TO-220SM | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 450 V | 10A (Ta) | 10V | 650mOhm @ 5A, 10V | 5V @ 1mA | 23 nC @ 10 V | ±30V | 920 pF @ 10 V | - | 65W (Tc) | |||||||||||||||||||||||||||||||||
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TPCP8004(TE85L,F) | - | ![]() |
6792 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TPCP8004 | MOSFET (Metal Oxide) | PS-8 (2.9x2.4) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 8.3A (Ta) | 4.5V, 10V | 8.5mOhm @ 4.2A, 10V | 2.5V @ 1mA | 26 nC @ 10 V | ±20V | 1270 pF @ 10 V | - | 840mW (Ta) | |||||||||||||||||||||||||||||||||
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RN1903,LXHF(CT | 0.3600 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN1903 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250MHz | 22kOhms | 22kOhms | ||||||||||||||||||||||||||||||||||||
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TK35E08N1,S1X | 1.1500 | ![]() |
50 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK35E08 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 80 V | 55A (Tc) | 10V | 12.2mOhm @ 17.5A, 10V | 4V @ 300µA | 25 nC @ 10 V | ±20V | 1700 pF @ 40 V | - | 72W (Tc) | ||||||||||||||||||||||||||||||||
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2SC5354,XGQ(O | - | ![]() |
1637 | 0.00000000 | Toshiba Semiconductor and Storage | * | Tube | Active | 2SC5354 | download | RoHS Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | ||||||||||||||||||||||||||||||||||||||||||||||||
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1SV239TPH3F | 0.4300 | ![]() |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-76, SOD-323 | 1SV239 | USC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | 2pF @ 10V, 1MHz | Single | 15 V | 2.4 | C2/C10 | - | ||||||||||||||||||||||||||||||||||||||
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2SC5819(TE12L,ZF) | - | ![]() |
4711 | 0.00000000 | Toshiba Semiconductor and Storage | - | Box | Active | 150°C (TJ) | Surface Mount | TO-243AA | 1 W | PW-MINI | download | EAR99 | 8541.29.0095 | 1 | 20 V | 1.5 A | 100nA (ICBO) | NPN | 120mV @ 10mA, 500mA | 400 @ 150mA, 2V | - | |||||||||||||||||||||||||||||||||||||||
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2SC5066-O,LF | - | ![]() |
9564 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 125°C (TJ) | Surface Mount | SC-75, SOT-416 | 2SC5066 | 100mW | SSM | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | - | 12V | 30mA | NPN | 80 @ 10mA, 5V | 7GHz | 1dB @ 500MHz | ||||||||||||||||||||||||||||||||||||
CRS10I30A(TE85L,QM | 0.3800 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-123F | CRS10I30 | Schottky | S-FLAT (1.6x3.5) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 390 mV @ 700 mA | 60 µA @ 30 V | 150°C | 1A | 50pF @ 10V, 1MHz | ||||||||||||||||||||||||||||||||||||||
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TTD1509B,Q(S | - | ![]() |
2966 | 0.00000000 | Toshiba Semiconductor and Storage | * | Tube | Active | TTD1509 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0075 | 250 | ||||||||||||||||||||||||||||||||||||||||||||||||
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1SS394TE85LF | 0.3900 | ![]() |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 1SS394 | Schottky | SC-59 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 10 V | 500 mV @ 100 mA | 20 µA @ 10 V | 125°C (Max) | 100mA | 40pF @ 0V, 1MHz | |||||||||||||||||||||||||||||||||||||
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TK28V65W,LQ | 5.2600 | ![]() |
4 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 4-VSFN Exposed Pad | TK28V65 | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 650 V | 27.6A (Ta) | 10V | 120mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 240W (Tc) |
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