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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Test Condition | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2SA1588-O,LF | 0.0478 |  |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SA1588 | 100 mW | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 30 V | 500 mA | 100nA (ICBO) | PNP | 250mV @ 10mA, 100mA | 70 @ 100mA, 1V | 200MHz | |||||||||||||||||||||||||||||||||
 |
1SS321,LF | 0.3200 | |
41 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 1SS321 | Schottky | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 10 V | 1 V @ 50 mA | 500 nA @ 10 V | 125°C (Max) | 50mA | 3.2pF @ 0V, 1MHz | ||||||||||||||||||||||||||||||||||
 |
RN2405,LXHF | 0.3500 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2405 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200 MHz | 2.2 kOhms | 47 kOhms | |||||||||||||||||||||||||||||||||
 |
RN2107MFV,L3XHF(CT | 0.3400 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN2107 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 500µA, 5mA | 80 @ 10mA, 5V | 10 kOhms | 47 kOhms | ||||||||||||||||||||||||||||||||||
|
RN2309,LXHF | 0.3900 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN2309 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200 MHz | 47 kOhms | 22 kOhms | |||||||||||||||||||||||||||||||||
 |
RN2906,LXHF(CT | 0.4400 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2906 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 4.7kOhms | 47kOhms | |||||||||||||||||||||||||||||||||
 |
TK9A90E,S4X | 2.2100 | |
40 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVIII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK9A90 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 900 V | 9A (Ta) | 10V | 1.3Ohm @ 4.5A, 10V | 4V @ 900µA | 46 nC @ 10 V | ±30V | 2000 pF @ 25 V | - | 50W (Tc) | |||||||||||||||||||||||||||||
 |
SSM6J207FE,LF | 0.4200 | |
9048 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6J207 | MOSFET (Metal Oxide) | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | P-Channel | 30 V | 1.4A (Ta) | 4V, 10V | 251mOhm @ 650mA, 10V | 2.6V @ 1mA | ±20V | 137 pF @ 15 V | - | 500mW (Ta) | ||||||||||||||||||||||||||||||
|
RN4990(TE85L,F) | 0.3400 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4990 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250MHz, 200MHz | 4.7kOhms | - | |||||||||||||||||||||||||||||||||
 |
TPC8038-H(TE12L,Q) | - | |
2841 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSV-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8038 | MOSFET (Metal Oxide) | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 12A (Ta) | 11.4mOhm @ 6A, 10V | 2.5V @ 1mA | 21 nC @ 10 V | 2150 pF @ 10 V | - | - | ||||||||||||||||||||||||||||||||
|
2SC3325-O(TE85L,F) | 0.3900 | |
9502 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SC3325 | 200 mW | S-Mini | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 500 mA | 100nA (ICBO) | NPN | 250mV @ 10mA, 100mA | 70 @ 100mA, 1V | 300MHz | |||||||||||||||||||||||||||||||||
 |
2SK2989(TPE6,F,M) | - | |
8590 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-226-3, TO-92-3 Long Body | 2SK2989 | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 5A (Tj) | ||||||||||||||||||||||||||||||||||||||||||
 |
TPHR9003NL1,LQ | 1.5900 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-SOP Advance (5x5.75) | - | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 150A (Tc) | 4.5V, 10V | 0.9mOhm @ 50A, 10V | 2.3V @ 1mA | 74 nC @ 10 V | ±20V | 6900 pF @ 15 V | - | 800mW (Ta), 170W (Tc) | |||||||||||||||||||||||||||||||
 |
CUS15S40,H3F | 0.3900 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-76, SOD-323 | CUS15S40 | Schottky | USC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 450 mV @ 1 A | 200 µA @ 40 V | 125°C (Max) | 1.5A | 170pF @ 0V, 1MHz | ||||||||||||||||||||||||||||||||||
 |
SSM6N951L,EFF | 0.9900 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | - | Surface Mount | 6-SMD, No Lead | SSM6N951 | MOSFET (Metal Oxide) | - | 6-TCSPA (2.14x1.67) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 10,000 | 2 N-Channel (Dual) Common Drain | 12V | 8A | 5.1mOhm @ 8A, 4.5V | - | - | - | - | |||||||||||||||||||||||||||||||
 |
2SJ438(AISIN,Q,M) | - | |
2864 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-220-3 Full Pack | 2SJ438 | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1 | 5A (Tj) | ||||||||||||||||||||||||||||||||||||||||||
|
RN2411,LXHF | 0.3400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2411 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200 MHz | 10 kOhms | ||||||||||||||||||||||||||||||||||
 |
SSM6J214FE(TE85L,F | 0.3900 | |
30 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-563, SOT-666 | SSM6J214 | MOSFET (Metal Oxide) | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | P-Channel | 30 V | 3.6A (Ta) | 1.8V, 10V | 50mOhm @ 3A, 10V | 1.2V @ 1mA | 7.9 nC @ 4.5 V | ±12V | 560 pF @ 15 V | - | 500mW (Ta) | |||||||||||||||||||||||||||||
 |
TK5A45DA(STA4,Q,M) | 1.0600 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK5A45 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 450 V | 4.5A (Ta) | 10V | 1.75Ohm @ 2.3A, 10V | 4.4V @ 1mA | 9 nC @ 10 V | ±30V | 380 pF @ 25 V | - | 30W (Tc) | |||||||||||||||||||||||||||||
 |
MT3S113TU,LF | 0.6400 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 3-SMD, Flat Lead | MT3S113 | 900mW | UFM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 12.5dB | 5.3V | 100mA | NPN | 200 @ 30mA, 5V | 11.2GHz | 1.45dB @ 1GHz | |||||||||||||||||||||||||||||||||
|
SSM6P16FE(TE85L,F) | - | |
1655 | 0.00000000 | Toshiba Semiconductor and Storage | - | Cut Tape (CT) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6P16 | MOSFET (Metal Oxide) | ES6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | P-Channel | 20 V | 100mA (Ta) | 8Ohm @ 10mA, 4V | - | 11 pF @ 3 V | - | 150mW (Ta) | ||||||||||||||||||||||||||||||||
 |
SSM3K56FS,LF | 0.3700 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM3K56 | MOSFET (Metal Oxide) | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 800mA (Ta) | 1.5V, 4.5V | 235mOhm @ 800mA, 4.5V | 1V @ 1mA | 1 nC @ 4.5 V | ±8V | 55 pF @ 10 V | - | 150mW (Ta) | |||||||||||||||||||||||||||||
|
SSM3J36FS,LF | 0.2900 | |
479 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM3J36 | MOSFET (Metal Oxide) | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 330mA (Ta) | 1.5V, 4.5V | 1.31Ohm @ 100mA, 4.5V | 1V @ 1mA | 1.2 nC @ 4 V | ±8V | 43 pF @ 10 V | - | 150mW (Ta) | |||||||||||||||||||||||||||||
|
TK100A10N1,S4X | 3.9800 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK100A10 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 100A (Tc) | 10V | 3.8mOhm @ 50A, 10V | 4V @ 1mA | 140 nC @ 10 V | ±20V | 8800 pF @ 50 V | - | 45W (Tc) | |||||||||||||||||||||||||||||
|
SSM6N37FU,LF | 0.3800 | |
391 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SSM6N37 | MOSFET (Metal Oxide) | 300mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 20V | 250mA (Ta) | 2.2Ohm @ 100mA, 4.5V | 1V @ 1mA | - | 12pF @ 10V | Logic Level Gate, 1.5V Drive | |||||||||||||||||||||||||||||||
 |
SSM3J112TU,LF | 0.4500 | |
9931 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 3-SMD, Flat Leads | SSM3J112 | MOSFET (Metal Oxide) | UFM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 30 V | 1.1A (Ta) | 4V, 10V | 390mOhm @ 500mA, 10V | 1.8V @ 100µA | ±20V | 86 pF @ 15 V | - | 800mW (Ta) | ||||||||||||||||||||||||||||||
 |
GT20J341,S4X(S | 2.0600 | |
7000 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | Standard | 45 W | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | 300V, 20A, 33Ohm, 15V | 90 ns | - | 600 V | 20 A | 80 A | 2V @ 15V, 20A | 500µJ (on), 400µJ (off) | 60ns/240ns | |||||||||||||||||||||||||||||||
 |
TK17E80W,S1X | 4.5900 | |
4719 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C | Through Hole | TO-220-3 | TK17E80 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 800 V | 17A (Ta) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 850µA | 32 nC @ 10 V | ±20V | 2050 pF @ 300 V | - | 180W (Tc) | |||||||||||||||||||||||||||||
|
TK3A65DA(STA4,QM) | 1.5200 | |
4118 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK3A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 2.5A (Ta) | 10V | 2.51Ohm @ 1.3A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 490 pF @ 25 V | - | 35W (Tc) | |||||||||||||||||||||||||||||
|
RN2119MFV,L3F | 0.1800 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN2119 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 500µA, 5mA | 120 @ 1mA, 5V | 1 kOhms |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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