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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TPH11003NL,LQ | 0.8000 |  |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH11003 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 32A (Ta) | 4.5V, 10V | 11mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5 nC @ 10 V | ±20V | 660 pF @ 15 V | - | 1.6W (Ta), 21W (Tc) | ||||||||||||||||||||||
 |
TRS12V65H,LQ | 3.2800 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 4-VSFN Exposed Pad | SiC (Silicon Carbide) Schottky | 4-DFN-EP (8x8) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 2,500 | No Recovery Time > 500mA (Io) | 650 V | 1.35 V @ 12 A | 0 ns | 120 µA @ 650 V | 175°C | 12A | 778pF @ 1V, 1MHz | |||||||||||||||||||||||||||
 |
RN2902FE,LF(CT | 0.2600 | |
9652 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN2902 | 200mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200MHz | 10kOhms | 10kOhms | |||||||||||||||||||||||||
 |
TK20V60W,LVQ | 2.8963 | |
5645 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | TK20V60 | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 600 V | 20A (Ta) | 10V | 170mOhm @ 10A, 10V | 3.7V @ 1mA | 48 nC @ 10 V | ±30V | 1680 pF @ 300 V | - | 156W (Tc) | ||||||||||||||||||||||
 |
RN4905,LF(CT | 0.3500 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4905 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz, 200MHz | 2.2kOhms | 47kOhms | |||||||||||||||||||||||||
 |
CMH05A(TE12L,Q,M) | - | |
6271 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOD-128 | CMH05A | Standard | M-FLAT (2.4x3.8) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | 1.8 V @ 1 A | 35 ns | 10 µA @ 400 V | -40°C ~ 150°C | 1A | - | ||||||||||||||||||||||||||
 |
RN1110,LF(CT | 0.2000 | |
1031 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1110 | 100 mW | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250 MHz | 4.7 kOhms | ||||||||||||||||||||||||||
 |
2SC4793,TOA1F(J | - | |
2036 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SC4793 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 230 V | 1 A | 1µA (ICBO) | NPN | 1.5V @ 50mA, 500mA | 100 @ 100mA, 5V | 100MHz | |||||||||||||||||||||||||||
 |
2SA1020-Y,F(J | - | |
8744 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | |||||||||||||||||||||||||||
 |
TK7S10N1Z,LQ | 1.4900 | |
77 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK7S10 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 100 V | 7A (Ta) | 10V | 48mOhm @ 3.5A, 10V | 4V @ 100µA | 7.1 nC @ 10 V | ±20V | 470 pF @ 10 V | - | 50W (Tc) | ||||||||||||||||||||||
 |
TK380A60Y,S4X | 1.5700 | |
63 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK380A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 9.7A (Tc) | 10V | 380mOhm @ 4.9A, 10V | 4V @ 360µA | 20 nC @ 10 V | ±30V | 590 pF @ 300 V | - | 30W | ||||||||||||||||||||||
 |
SSM3K56ACT,L3F | 0.4700 | |
188 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | SSM3K56 | MOSFET (Metal Oxide) | CST3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | N-Channel | 20 V | 1.4A (Ta) | 1.5V, 4.5V | 235mOhm @ 800mA, 4.5V | 1V @ 1mA | 1 nC @ 4.5 V | ±8V | 55 pF @ 10 V | - | 500mW (Ta) | ||||||||||||||||||||||
|
1SS184S,LF(D | - | |
3056 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 1SS184 | Standard | S-Mini | download | 1 (Unlimited) | 1SS184SLF(D | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 1 Pair Common Cathode | 80 V | 100mA | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) | ||||||||||||||||||||||||||
 |
XPH3R206NC,L1XHQ | 1.7500 | |
19 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-SOIC (0.197", 5.00mm Width) | XPH3R206 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 70A (Ta) | 3.2mOhm @ 35A, 10V | 2.5V @ 500µA | 65 nC @ 10 V | ±20V | 4180 pF @ 10 V | - | 960mW (Ta), 132W (Tc) | |||||||||||||||||||||||
 |
RN2710JE(TE85L,F) | 0.4800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-553 | RN2710 | 100mW | ESV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200MHz | 4.7kOhms | - | |||||||||||||||||||||||||
|
TK2R4A08QM,S4X | 2.8700 | |
46 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSX-H | Tube | Active | 175°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 80 V | 100A (Tc) | 6V, 10V | 2.44mOhm @ 50A, 10V | 3.5V @ 2.2mA | 179 nC @ 10 V | ±20V | 13000 pF @ 40 V | - | 47W (Tc) | |||||||||||||||||||||||
 |
SSM3J374R,LF | 0.4400 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-23-3 Flat Leads | SSM3J374 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 4A (Ta) | 4V, 10V | 71mOhm @ 3A, 10V | 2V @ 100µA | 5.9 nC @ 10 V | +10V, -20V | 280 pF @ 15 V | - | 1W (Ta) | ||||||||||||||||||||||
|
CMS11(TE12L) | - | |
4213 | 0.00000000 | Toshiba Semiconductor and Storage | - | Cut Tape (CT) | Obsolete | Surface Mount | SOD-128 | CMS11 | Schottky | M-FLAT (2.4x3.8) | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 550 mV @ 2 A | 500 µA @ 40 V | -40°C ~ 150°C | 2A | - | |||||||||||||||||||||||||||
 |
SSM6H19NU,LF | 0.3700 | |
61 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | SSM6H19 | MOSFET (Metal Oxide) | 6-UDFN (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 40 V | 2A (Ta) | 1.8V, 8V | 185mOhm @ 1A, 8V | 1.2V @ 1mA | 2.2 nC @ 4.2 V | ±12V | 130 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||||||||
|
RN1911FE,LXHF(CT | 0.3800 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN1911 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250MHz | 10kOhms | - | ||||||||||||||||||||||||||
|
2SC2235-Y(T6FJT,AF | - | |
6044 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2235 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | NPN | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | |||||||||||||||||||||||||||
 |
2SC4116-Y,LXHF | 0.3300 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 150 mA | 100nA (ICBO) | NPN | 250mV @ 10mA, 100mA | 120 @ 2mA, 6V | 80MHz | ||||||||||||||||||||||||||||
 |
RN4601(TE85L,F) | 0.4800 | |
548 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74, SOT-457 | RN4601 | 300mW | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 250MHz | 4.7kOhms | 4.7kOhms | |||||||||||||||||||||||||
 |
TK15J60U(F) | - | |
2207 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSII | Tray | Obsolete | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TK15J60 | MOSFET (Metal Oxide) | TO-3P(N) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 15A (Ta) | 10V | 300mOhm @ 7.5A, 10V | 5V @ 1mA | 17 nC @ 10 V | ±30V | 950 pF @ 10 V | - | 170W (Tc) | ||||||||||||||||||||||
|
TPN1R603PL,L1Q | 0.8900 | |
63 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPN1R603 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 80A (Tc) | 4.5V, 10V | 1.6mOhm @ 40A, 10V | 2.1V @ 300µA | 41 nC @ 10 V | ±20V | 3900 pF @ 15 V | - | 104W (Tc) | ||||||||||||||||||||||
 |
SSM3K62TU,LF | 0.4100 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 3-SMD, Flat Lead | SSM3K62 | MOSFET (Metal Oxide) | UFM | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 20 V | 800mA (Ta) | 1.2V, 4.5V | 57mOhm @ 800mA, 4.5V | 1V @ 1mA | 2 nC @ 4.5 V | ±8V | 177 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||||||||
 |
TK3A60DA(Q,M) | 1.2000 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK3A60 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 2.5A (Ta) | 10V | 2.8Ohm @ 1.3A, 10V | 4.4V @ 1mA | 9 nC @ 10 V | ±30V | 380 pF @ 25 V | - | 30W (Tc) | ||||||||||||||||||||||
 |
1SS405,H3F | 0.2700 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-79, SOD-523 | 1SS405 | Schottky | ESC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 4,000 | Small Signal =< 200mA (Io), Any Speed | 20 V | 550 mV @ 50 mA | 500 nA @ 20 V | 125°C (Max) | 50mA | 3.9pF @ 0V, 1MHz | |||||||||||||||||||||||||||
 |
1SS397TE85LF | 0.4100 | |
8305 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | 1SS397 | Standard | SC-70 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 400 V | 1.3 V @ 100 mA | 500 ns | 1 µA @ 400 V | 125°C (Max) | 100mA | 5pF @ 0V, 1MHz | ||||||||||||||||||||||||||
|
2SC2383-Y,T6KEHF(M | - | |
1154 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2383 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 160 V | 1 A | 1µA (ICBO) | NPN | 1.5V @ 50mA, 500mA | 60 @ 200mA, 5V | 100MHz |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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