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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Speed | FET Type | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1SS384TE85LF | 0.4200 |  |
16 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-82 | 1SS384 | Schottky | USQ | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 2 Independent | 10 V | 100mA | 500 mV @ 100 mA | 20 µA @ 10 V | 125°C (Max) | |||||||||||||||||||||||||||||
 |
HN1D03FTE85LF | 0.4200 | |
66 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74, SOT-457 | HN1D03 | Standard | SC-74 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 2 Pair CA + CC | 80 V | 100mA | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) | ||||||||||||||||||||||||||||
 |
2SC2235-Y(DNSO,AF) | - | |
8875 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2235 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | NPN | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | |||||||||||||||||||||||||||||
 |
RN1418,LF | 0.1800 | |
184 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1418 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 47 kOhms | 10 kOhms | |||||||||||||||||||||||||||
 |
TPH5900CNH,L1Q | 1.0100 | |
3577 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH5900 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 150 V | 9A (Ta) | 10V | 59mOhm @ 4.5A, 10V | 4V @ 200µA | 7 nC @ 10 V | ±20V | 600 pF @ 75 V | - | 1.6W (Ta), 42W (Tc) | ||||||||||||||||||||||||
|
RN1605TE85LF | 0.3500 | |
79 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74, SOT-457 | RN1605 | 300mW | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 2.2kOhms | 47kOhms | |||||||||||||||||||||||||||
 |
TK40A06N1,S4X | 1.2300 | |
100 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK40A06 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 40A (Tc) | 10V | 10.4mOhm @ 20A, 10V | 4V @ 300µA | 23 nC @ 10 V | ±20V | 1700 pF @ 30 V | - | 30W (Tc) | ||||||||||||||||||||||||
 |
RN1104T5LFT | 0.3800 | |
528 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1104 | 100 mW | SSM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 47 kOhms | 47 kOhms | |||||||||||||||||||||||||||
 |
TK16J60W,S1VE | 5.0500 | |
5490 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-3P-3, SC-65-3 | TK16J60 | MOSFET (Metal Oxide) | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 130W (Tc) | ||||||||||||||||||||||||
 |
RN1510(TE85L,F) | 0.4500 | |
142 | 0.00000000 | Toshiba Semiconductor and Storage | - | Cut Tape (CT) | Active | Surface Mount | SC-74A, SOT-753 | RN1510 | 300mW | SMV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250MHz | 4.7kOhms | - | |||||||||||||||||||||||||||
 |
2SK3566(STA4,Q,M) | 1.6700 | |
955 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SK3566 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 900 V | 2.5A (Ta) | 10V | 6.4Ohm @ 1.5A, 10V | 4V @ 1mA | 12 nC @ 10 V | ±30V | 470 pF @ 25 V | - | 40W (Tc) | ||||||||||||||||||||||||
 |
2SC4793,F(J | - | |
3083 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SC4793 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 230 V | 1 A | 1µA (ICBO) | NPN | 1.5V @ 50mA, 500mA | 100 @ 100mA, 5V | 100MHz | |||||||||||||||||||||||||||||
 |
RN1113MFV,L3F | 0.1800 | |
7550 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN1113 | 150 mW | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 500µA, 5mA | 120 @ 1mA, 5V | 47 kOhms | |||||||||||||||||||||||||||||
 |
DSF01S30SL,L3F | 0.3500 | |
62 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 2-SMD, No Lead | DSF01S30 | Schottky | SL2 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 10,000 | Small Signal =< 200mA (Io), Any Speed | 30 V | 500 mV @ 100 mA | 50 µA @ 30 V | 125°C (Max) | 100mA | 9.02pF @ 2V, 1MHz | |||||||||||||||||||||||||||||
 |
RN1710JE(TE85L,F) | 0.4000 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-553 | RN1710 | 100mW | ESV | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250MHz | 4.7kOhms | - | ||||||||||||||||||||||||||||
 |
TK8P60W5,RVQ | 1.5900 | |
15 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK8P60 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 600 V | 8A (Ta) | 10V | 560mOhm @ 4A, 10V | 4.5V @ 400µA | 22 nC @ 10 V | ±30V | 590 pF @ 300 V | - | 80W (Tc) | ||||||||||||||||||||||||
 |
1SS190TE85LF | 0.3500 | |
47 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 1SS190 | Standard | SC-59-3 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 80 V | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) | 100mA | 4pF @ 0V, 1MHz | ||||||||||||||||||||||||||||
 |
DSF01S30SC(TPL3) | - | |
1853 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 0201 (0603 Metric) | DSF01S30 | Schottky | SC2 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 10,000 | Small Signal =< 200mA (Io), Any Speed | 30 V | 500 mV @ 100 mA | 50 µA @ 30 V | 125°C (Max) | 100mA | 9.3pF @ 0V, 1MHz | |||||||||||||||||||||||||||||
 |
1SS406,H3F | 0.2000 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-76, SOD-323 | 1SS406 | Schottky | USC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 20 V | 550 mV @ 50 mA | 500 nA @ 20 V | 125°C (Max) | 50mA | 3.9pF @ 0V, 1MHz | |||||||||||||||||||||||||||||
|
2SA1931,Q(J | - | |
8362 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SA1931 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 50 V | 5 A | 1µA (ICBO) | PNP | 400mV @ 200mA, 2A | 100 @ 1A, 1V | 60MHz | |||||||||||||||||||||||||||||
 |
TPN2R903PL,L1Q | 0.8300 | |
39 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPN2R903 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 70A (Tc) | 4.5V, 10V | 2.9mOhm @ 35A, 10V | 2.1V @ 200µA | 26 nC @ 10 V | ±20V | 2300 pF @ 15 V | - | 630mW (Ta), 75W (Tc) | |||||||||||||||||||||||||
|
2SA1943N(S1,E,S) | 2.4400 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | 2SA1943 | 150 W | TO-3P(N) | download | ROHS3 Compliant | Not Applicable | 2SA1943N(S1ES) | EAR99 | 8541.29.0075 | 25 | 230 V | 15 A | 5µA (ICBO) | PNP | 3V @ 800mA, 8A | 80 @ 1A, 5V | 30MHz | |||||||||||||||||||||||||||
 |
TRS24N65FB,S1Q | 7.6500 | |
105 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-247-3 | TRS24N65 | SiC (Silicon Carbide) Schottky | TO-247 | - | 1 (Unlimited) | 264-TRS24N65FBS1Q | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 12A (DC) | 1.6 V @ 12 A | 0 ns | 60 µA @ 650 V | 175°C | ||||||||||||||||||||||||||||
 |
RN1308,LXHF | 0.3900 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN1308 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 22 kOhms | 47 kOhms | ||||||||||||||||||||||||||||
|
2SA1020-Y(HIT,F,M) | - | |
3530 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | |||||||||||||||||||||||||||||
|
SSM3K15FS,LF | - | |
2330 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVI | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM3K15 | MOSFET (Metal Oxide) | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | ±20V | 7.8 pF @ 3 V | - | 200mW (Ta) | ||||||||||||||||||||||||||
 |
TPC6110(TE85L,F,M) | - | |
4645 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TPC6110 | MOSFET (Metal Oxide) | VS-6 (2.9x2.8) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 30 V | 4.5A (Ta) | 56mOhm @ 2.2A, 10V | 2V @ 100µA | 14 nC @ 10 V | 510 pF @ 10 V | - | 700mW (Ta) | ||||||||||||||||||||||||||
|
2SA1163-BL,LF | 0.3200 | |
6073 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SA1163 | 150 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 120 V | 100 mA | 100nA (ICBO) | PNP | 300mV @ 1mA, 10mA | 350 @ 2mA, 6V | 100MHz | ||||||||||||||||||||||||||||
|
2SC5232BTE85LF | 0.1300 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SC5232 | 150 mW | SC-59 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 12 V | 500 mA | 100nA (ICBO) | NPN | 250mV @ 10mA, 200mA | 500 @ 10mA, 2V | 130MHz | |||||||||||||||||||||||||||||
|
2SC5095-O(TE85L,F) | - | |
3191 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SC5095 | 100mW | SC-70 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 13dB ~ 7dB | 10V | 15mA | NPN | 80 @ 7mA, 6V | 10GHz | 1.8dB @ 2GHz |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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