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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Tolerance | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Diode Type | Voltage - Peak Reverse (Max) | Current - Collector Cutoff (Max) | Voltage - Zener (Nom) (Vz) | Impedance (Max) (Zzt) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Capacitance Ratio | Capacitance Ratio Condition | Q @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2SB1457,T6TOTOF(J | - |  |
2446 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SB1457 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 100 V | 2 A | 10µA (ICBO) | PNP | 1.5V @ 1mA, 1A | 2000 @ 1A, 2V | 50MHz | |||||||||||||||||||||||||||||||||
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2SA1954BTE85LF | - | |
7205 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SA1954 | 100 mW | SC-70 | - | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 12 V | 500 mA | 100nA (ICBO) | PNP | 250mV @ 10mA, 200mA | 500 @ 10mA, 2V | 130MHz | |||||||||||||||||||||||||||||||||
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TJ40S04M3L(T6L1,NQ | 1.7200 | |
1939 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ40S04 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 40 V | 40A (Ta) | 6V, 10V | 9.1mOhm @ 20A, 10V | 3V @ 1mA | 83 nC @ 10 V | +10V, -20V | 4140 pF @ 10 V | - | 68W (Tc) | ||||||||||||||||||||||||||||
 |
SSM6K513NU,LF | 0.4600 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 150°C (TA) | Surface Mount | 6-WDFN Exposed Pad | SSM6K513 | MOSFET (Metal Oxide) | 6-UDFNB (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 15A (Ta) | 4.5V, 10V | 8.9mOhm @ 4A, 10V | 2.1V @ 100µA | 7.5 nC @ 4.5 V | ±20V | 1130 pF @ 15 V | - | 1.25W (Ta) | ||||||||||||||||||||||||||||
 |
HN4A56JU(TE85L,F) | 0.0616 | |
4855 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | HN4A56 | 200mW | USV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 150mA | 100nA (ICBO) | 2 PNP (Dual) | 300mV @ 10mA, 100mA | 120 @ 2mA, 6V | 60MHz | ||||||||||||||||||||||||||||||||
 |
RN4901FE,LF(CT | 0.2400 | |
350 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4901 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 4,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 200MHz, 250MHz | 4.7kOhms | 4.7kOhms | |||||||||||||||||||||||||||||||
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TK4A53D(STA4,Q,M) | - | |
7821 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK4A53 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 525 V | 4A (Ta) | 10V | 1.7Ohm @ 2A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 490 pF @ 25 V | - | 35W (Tc) | ||||||||||||||||||||||||||||
 |
SSM6P49NU,LF | 0.4200 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | SSM6P49 | MOSFET (Metal Oxide) | 1W | 6-UDFN (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 P-Channel (Dual) | 20V | 4A | 45mOhm @ 3.5A, 10V | 1.2V @ 1mA | 6.74nC @ 4.5V | 480pF @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||
 |
RN4903(T5L,F,T) | - | |
4486 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4903 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200MHz | 22kOhms | 22kOhms | ||||||||||||||||||||||||||||||||
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TPH2R608NH,L1Q | 1.5400 | |
14 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH2R608 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 75 V | 150A (Tc) | 10V | 2.6mOhm @ 50A, 10V | 4V @ 1mA | 72 nC @ 10 V | ±20V | 6000 pF @ 37.5 V | - | 142W (Tc) | ||||||||||||||||||||||||||||
|
RN1901FE,LXHF(CT | 0.3800 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN1901 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 250MHz | 4.7kOhms | 4.7kOhms | ||||||||||||||||||||||||||||||||
 |
ULN2803APG,CN | - | |
1735 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | -40°C ~ 85°C (TA) | Through Hole | 18-DIP (0.300", 7.62mm) | ULN2803 | 1.47W | 18-DIP | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 800 | 50V | 500mA | - | 8 NPN Darlington | 1.6V @ 500µA, 350mA | 1000 @ 350mA, 2V | - | |||||||||||||||||||||||||||||||||
 |
RN2962(TE85L,F) | 0.4800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2962 | 200mW | US6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200MHz | 10kOhms | 10kOhms | |||||||||||||||||||||||||||||||
 |
RN1608(TE85L,F) | 0.4800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74, SOT-457 | RN1608 | 300mW | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 22kOhms | 47kOhms | |||||||||||||||||||||||||||||||
 |
2SA1182-Y,LF | 0.3300 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SA1182 | 150 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 30 V | 500 mA | 100nA (ICBO) | PNP | 250mV @ 10mA, 100mA | 120 @ 100mA, 1V | 200MHz | ||||||||||||||||||||||||||||||||
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TK11S10N1L,LXHQ | 0.9700 | |
1392 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK11S10 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 100 V | 11A (Ta) | 4.5V, 10V | 28mOhm @ 5.5A, 10V | 2.5V @ 100µA | 15 nC @ 10 V | ±20V | 850 pF @ 10 V | - | 65W (Tc) | |||||||||||||||||||||||||||||
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RN2105ACT(TPL3) | 0.0527 | |
10 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-101, SOT-883 | RN2105 | 100 mW | CST3 | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 50 V | 80 mA | 500nA | PNP - Pre-Biased | 150mV @ 250µA, 5mA | 80 @ 10mA, 5V | 2.2 kOhms | 47 kOhms | ||||||||||||||||||||||||||||||||
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TK90S06N1L,LXHQ | 1.7200 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK90S06 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 60 V | 90A (Ta) | 4.5V, 10V | 3.3mOhm @ 45A, 10V | 2.5V @ 500µA | 81 nC @ 10 V | ±20V | 5400 pF @ 10 V | - | 157W (Tc) | |||||||||||||||||||||||||||||
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CLS01(TE16L,PAS,Q) | - | |
8647 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Surface Mount | L-FLAT™ | CLS01 | Schottky | L-FLAT™ (4x5.5) | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 470 mV @ 10 A | 1 mA @ 30 V | -40°C ~ 125°C | 10A | 530pF @ 10V, 1MHz | ||||||||||||||||||||||||||||||||||
 |
CRZ15(TE85L,Q,M) | 0.4800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | ±10% | -40°C ~ 150°C | Surface Mount | SOD-123F | CRZ15 | 700 mW | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0050 | 3,000 | 1 V @ 200 mA | 10 µA @ 10 V | 15 V | 30 Ohms | ||||||||||||||||||||||||||||||||||
 |
RN1109,LF(CT | 0.2000 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1109 | 100 mW | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250 MHz | 47 kOhms | 22 kOhms | |||||||||||||||||||||||||||||||
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SSM5H08TU,LF | 0.4800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD (5 Leads), Flat Lead | SSM5H08 | MOSFET (Metal Oxide) | UFV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 1.5A (Ta) | 2.5V, 4V | 160mOhm @ 750mA, 4V | 1.1V @ 100µA | ±12V | 125 pF @ 10 V | Schottky Diode (Isolated) | 500mW (Ta) | |||||||||||||||||||||||||||||
|
RN1911FETE85LF | - | |
8032 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN1911 | 100mW | ES6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250MHz | 10kOhms | - | |||||||||||||||||||||||||||||||
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2SC3672-O(T2ASH,FM | - | |
7881 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | SC-71 | 2SC3672 | 1 W | MSTM | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 300 V | 100 mA | 100nA (ICBO) | NPN | 500mV @ 2mA, 20mA | 30 @ 20mA, 10V | 80MHz | |||||||||||||||||||||||||||||||||
 |
2SC5171,Q(J | - | |
7250 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SC5171 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 180 V | 2 A | 5µA (ICBO) | NPN | 1V @ 100mA, 1A | 100 @ 100mA, 5V | 200MHz | |||||||||||||||||||||||||||||||||
 |
1SV228TPH3F | 0.4400 | |
20 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 1SV228 | S-Mini | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | 13.7pF @ 8V, 1MHz | 1 Pair Common Cathode | 15 V | 2.6 | C3/C8 | - | ||||||||||||||||||||||||||||||||||
 |
XPN12006NC,L1XHQ | 1.2300 | |
10 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 175°C | Surface Mount | 8-PowerVDFN | XPN12006 | MOSFET (Metal Oxide) | 8-TSON Advance-WF (3.1x3.1) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 20A | 4.5V, 10V | 12mOhm @ 10A, 10V | 2.5V @ 200µA | 23 nC @ 10 V | ±20V | 1100 pF @ 10 V | 65W (Tc) | ||||||||||||||||||||||||||||||
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TK3A90E,S4X | 1.2300 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | 264-TK3A90ES4X | EAR99 | 8541.29.0095 | 50 | N-Channel | 900 V | 2.5A (Ta) | 10V | 4.6Ohm @ 1.3A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±30V | 650 pF @ 25 V | - | 35W (Tc) | ||||||||||||||||||||||||||||
|
2SB1457(T6CNO,A,F) | - | |
2426 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SB1457 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 100 V | 2 A | 10µA (ICBO) | PNP | 1.5V @ 1mA, 1A | 2000 @ 1A, 2V | 50MHz | |||||||||||||||||||||||||||||||||
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TK65S04K3L(T6L1,NQ | - | |
5095 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Obsolete | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK65S04 | MOSFET (Metal Oxide) | DPAK+ | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 40 V | 65A (Ta) | 6V, 10V | 4.5mOhm @ 32.5A, 10V | 3V @ 1mA | 63 nC @ 10 V | ±20V | 2800 pF @ 10 V | - | 88W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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