- RFQ
- BOM
-
Contact Us
Tel: +86-0755-83501315
Email: sales@sic-components.com
- Chinese
- English
- French
- German
- Portuguese
- Spanish
- Russian
- Japanese
- Korean
- Arabic
- Irish
- Greek
- Turkish
- Italian
- Danish
- Romanian
- Indonesian
- Czech
- Afrikaans
- Swedish
- Polish
- Basque
- Catalan
- Esperanto
- Hindi
- Lao
- Albanian
- Amharic
- Armenian
- Azerbaijani
- Belarusian
- Bengali
- Bosnian
- Bulgarian
- Cebuano
- Chichewa
- Corsican
- Croatian
- Dutch
- Estonian
- Filipino
- Finnish
- Frisian
- Galician
- Georgian
- Gujarati
- Haitian
- Hausa
- Hawaiian
- Hebrew
- Hmong
- Hungarian
- Icelandic
- Igbo
- Javanese
- Kannada
- Kazakh
- Khmer
- Kurdish
- Kyrgyz
- Latin
- Latvian
- Lithuanian
- Luxembou..
- Macedonian
- Malagasy
- Malay
- Malayalam
- Maltese
- Maori
- Marathi
- Mongolian
- Burmese
- Nepali
- Norwegian
- Pashto
- Persian
- Punjabi
- Serbian
- Sesotho
- Sinhala
- Slovak
- Slovenian
- Somali
- Samoan
- Scots Gaelic
- Shona
- Sindhi
- Sundanese
- Swahili
- Tajik
- Tamil
- Telugu
- Thai
- Ukrainian
- Urdu
- Uzbek
- Vietnamese
- Welsh
- Xhosa
- Yiddish
- Yoruba
- Zulu
- Kinyarwanda
- Tatar
- Oriya
- Turkmen
- Uyghur
Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Tolerance | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Diode Type | Voltage - Peak Reverse (Max) | Current - Collector Cutoff (Max) | Voltage - Zener (Nom) (Vz) | Impedance (Max) (Zzt) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Capacitance Ratio | Capacitance Ratio Condition | Q @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CRH01(TE85R,Q,M) | 0.5200 |  |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-123F | CRH01 | Standard | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | 980 mV @ 1 A | 35 ns | 10 µA @ 200 V | -40°C ~ 150°C | 1A | - | ||||||||||||||||||||||||||||||||
 |
2SC5201,F(J | - | |
5246 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC5201 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 600 V | 50 mA | 1µA (ICBO) | NPN | 1V @ 500mA, 20mA | 100 @ 20mA, 5V | - | |||||||||||||||||||||||||||||||||
 |
TK20A60W5,S5VX | 3.2700 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK20A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 20A (Ta) | 10V | 175mOhm @ 10A, 10V | 4.5V @ 1mA | 55 nC @ 10 V | ±30V | 1800 pF @ 300 V | - | 45W (Tc) | ||||||||||||||||||||||||||||
 |
TPH2R608NH,L1Q | 1.5400 | |
14 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH2R608 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 75 V | 150A (Tc) | 10V | 2.6mOhm @ 50A, 10V | 4V @ 1mA | 72 nC @ 10 V | ±20V | 6000 pF @ 37.5 V | - | 142W (Tc) | ||||||||||||||||||||||||||||
 |
ULN2803APG,CN | - | |
1735 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | -40°C ~ 85°C (TA) | Through Hole | 18-DIP (0.300", 7.62mm) | ULN2803 | 1.47W | 18-DIP | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 800 | 50V | 500mA | - | 8 NPN Darlington | 1.6V @ 500µA, 350mA | 1000 @ 350mA, 2V | - | |||||||||||||||||||||||||||||||||
 |
RN4903(T5L,F,T) | - | |
4486 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4903 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200MHz | 22kOhms | 22kOhms | ||||||||||||||||||||||||||||||||
 |
RN1911FETE85LF | - | |
8032 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN1911 | 100mW | ES6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250MHz | 10kOhms | - | |||||||||||||||||||||||||||||||
 |
1SV228TPH3F | 0.4400 | |
20 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 1SV228 | S-Mini | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | 13.7pF @ 8V, 1MHz | 1 Pair Common Cathode | 15 V | 2.6 | C3/C8 | - | ||||||||||||||||||||||||||||||||||
 |
SSM5H08TU,LF | 0.4800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD (5 Leads), Flat Lead | SSM5H08 | MOSFET (Metal Oxide) | UFV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 1.5A (Ta) | 2.5V, 4V | 160mOhm @ 750mA, 4V | 1.1V @ 100µA | ±12V | 125 pF @ 10 V | Schottky Diode (Isolated) | 500mW (Ta) | |||||||||||||||||||||||||||||
|
CRZ15(TE85L,Q,M) | 0.4800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | ±10% | -40°C ~ 150°C | Surface Mount | SOD-123F | CRZ15 | 700 mW | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0050 | 3,000 | 1 V @ 200 mA | 10 µA @ 10 V | 15 V | 30 Ohms | ||||||||||||||||||||||||||||||||||
 |
RN2962(TE85L,F) | 0.4800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2962 | 200mW | US6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200MHz | 10kOhms | 10kOhms | |||||||||||||||||||||||||||||||
 |
XPN12006NC,L1XHQ | 1.2300 | |
10 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 175°C | Surface Mount | 8-PowerVDFN | XPN12006 | MOSFET (Metal Oxide) | 8-TSON Advance-WF (3.1x3.1) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 20A | 4.5V, 10V | 12mOhm @ 10A, 10V | 2.5V @ 200µA | 23 nC @ 10 V | ±20V | 1100 pF @ 10 V | 65W (Tc) | ||||||||||||||||||||||||||||||
 |
2SA1837,WNLF(J | - | |
5431 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SA1837 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 230 V | 1 A | 1µA (ICBO) | PNP | 1.5V @ 50mA, 500mA | 100 @ 100mA, 5V | 70MHz | |||||||||||||||||||||||||||||||||
|
RN1909FE(TE85L,F) | 0.3500 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN1909 | 100mW | ES6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250MHz | 47kOhms | 22kOhms | |||||||||||||||||||||||||||||||
 |
RN1417,LF | 0.1800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1417 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 250 MHz | 10 kOhms | 4.7 kOhms | |||||||||||||||||||||||||||||||
 |
2SC3665-Y,T2F(J | - | |
2388 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | SC-71 | 2SC3665 | 1 W | MSTM | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | NPN | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | |||||||||||||||||||||||||||||||||
 |
TK35E10K3(S1SS-Q) | - | |
8927 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | - | Through Hole | TO-220-3 | TK35E10 | - | TO-220 | - | RoHS Compliant | 1 (Unlimited) | TK35E10K3S1SSQ | EAR99 | 8541.29.0095 | 50 | - | - | - | - | - | - | ||||||||||||||||||||||||||||||||
|
TPH1500CNH1,LQ | 1.6600 | |
9158 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerTDFN | TPH1500 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5.75) | download | 1 (Unlimited) | 5,000 | N-Channel | 150 V | 74A (Ta), 38A (Tc) | 10V | 15.4mOhm @ 19A, 10V | 4V @ 1mA | ±20V | 2200 pF @ 75 V | - | 2.5W (Ta), 170W (Tc) | ||||||||||||||||||||||||||||||||
 |
XPW4R10ANB,L1XHQ | 2.3200 | |
22 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 175°C | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | 8-DSOP Advance | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 100 V | 70A | 6V, 10V | 4.1mOhm @ 35A, 10V | 3.5V @ 1mA | 75 nC @ 10 V | ±20V | 4970 pF @ 10 V | Standard | 170W (Tc) | |||||||||||||||||||||||||||||
|
CRS05(TE85L,Q,M) | 0.1326 | |
9706 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-123F | CRS05 | Schottky | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 450 mV @ 1 A | 200 µA @ 30 V | -40°C ~ 150°C | 1A | - | |||||||||||||||||||||||||||||||||
 |
TPN4R203NC,L1Q | 0.4595 | |
1481 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPN4R203 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 23A (Ta) | 4.5V, 10V | 4.2mOhm @ 11.5A, 10V | 2.3V @ 200µA | 24 nC @ 10 V | ±20V | 1370 pF @ 15 V | - | 700mW (Ta), 22W (Tc) | ||||||||||||||||||||||||||||
 |
SSM3K15ACT(TPL3) | 0.0672 | |
1826 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | SSM3K15 | MOSFET (Metal Oxide) | CST3 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | N-Channel | 30 V | 100mA (Ta) | 2.5V, 4V | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | ±20V | 13.5 pF @ 3 V | - | 100mW (Ta) | |||||||||||||||||||||||||||||
 |
RN1102,LXHF(CT | 0.3300 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1102 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 10 kOhms | 10 kOhms | ||||||||||||||||||||||||||||||||
|
CLH02(TE16R,Q) | - | |
2543 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Surface Mount | L-FLAT™ | CLH02 | Standard | L-FLAT™ (4x5.5) | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 300 V | 1.3 V @ 3 A | 35 ns | 10 µA @ 300 V | -40°C ~ 150°C | 3A | - | |||||||||||||||||||||||||||||||||
|
HN1C01FE-Y,LF | 0.3000 | |
9838 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | HN1C01 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 150mA | 100nA (ICBO) | 2 NPN (Dual) | 250mV @ 10mA, 100mA | 120 @ 2mA, 6V | 80MHz | ||||||||||||||||||||||||||||||||
|
2SC3325-Y,LF | 0.3200 | |
61 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SC3325 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 500 mA | 100nA (ICBO) | NPN | 250mV @ 10mA, 100mA | 120 @ 100mA, 1V | 300MHz | ||||||||||||||||||||||||||||||||
|
TK50E10K3(S1SS-Q) | - | |
9888 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | - | Through Hole | - | TK50E10 | - | TO-220-3 | - | RoHS Compliant | 1 (Unlimited) | TK50E10K3S1SSQ | EAR99 | 8541.29.0095 | 50 | - | - | - | - | - | - | ||||||||||||||||||||||||||||||||
 |
2SK4016(Q) | - | |
1323 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SK4016 | MOSFET (Metal Oxide) | TO-220SIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 13A (Ta) | 10V | 500mOhm @ 6.5A, 10V | 4V @ 1mA | 62 nC @ 10 V | ±30V | 3100 pF @ 25 V | - | 50W (Tc) | |||||||||||||||||||||||||||||
 |
SSM3J355R,LF | 0.4200 | |
51 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SSM3J355 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 6A (Ta) | 1.8V, 4.5V | 30.1mOhm @ 4A, 4.5V | 1V @ 1mA | 16.6 nC @ 4.5 V | ±10V | 1030 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||||||||||||||
|
TRS4V65H,LQ | 1.8500 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 4-VSFN Exposed Pad | SiC (Silicon Carbide) Schottky | 4-DFN-EP (8x8) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 2,500 | No Recovery Time > 500mA (Io) | 650 V | 1.34 V @ 4 A | 0 ns | 55 µA @ 650 V | 175°C | 4A | 263pF @ 1V, 1MHz |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
Wishlist (0 Items)