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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK50E10K3(S1SS-Q) | - |  |
9888 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | - | Through Hole | - | TK50E10 | - | TO-220-3 | - | RoHS Compliant | 1 (Unlimited) | TK50E10K3S1SSQ | EAR99 | 8541.29.0095 | 50 | - | - | - | - | - | - | ||||||||||||||||||||||||||||
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2SK4016(Q) | - | |
1323 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SK4016 | MOSFET (Metal Oxide) | TO-220SIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 13A (Ta) | 10V | 500mOhm @ 6.5A, 10V | 4V @ 1mA | 62 nC @ 10 V | ±30V | 3100 pF @ 25 V | - | 50W (Tc) | |||||||||||||||||||||||||
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SSM3J355R,LF | 0.4200 | |
51 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SSM3J355 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 6A (Ta) | 1.8V, 4.5V | 30.1mOhm @ 4A, 4.5V | 1V @ 1mA | 16.6 nC @ 4.5 V | ±10V | 1030 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||||||||||
|
TRS4V65H,LQ | 1.8500 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 4-VSFN Exposed Pad | SiC (Silicon Carbide) Schottky | 4-DFN-EP (8x8) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 2,500 | No Recovery Time > 500mA (Io) | 650 V | 1.34 V @ 4 A | 0 ns | 55 µA @ 650 V | 175°C | 4A | 263pF @ 1V, 1MHz | |||||||||||||||||||||||||||||
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RN2101CT(TPL3) | - | |
5357 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-101, SOT-883 | RN2101 | 50 mW | CST3 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 20 V | 50 mA | 500nA | PNP - Pre-Biased | 150mV @ 250µA, 5mA | 30 @ 10mA, 5V | 4.7 kOhms | 4.7 kOhms | |||||||||||||||||||||||||||||
 |
SSM6N62TU,LF | 0.4200 | |
12 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6N62 | MOSFET (Metal Oxide) | 500mW (Ta) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 20V | 800mA (Ta) | 85mOhm @ 800mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 177pF @ 10V | Logic Level Gate, 1.2V Drive | ||||||||||||||||||||||||||
 |
TK40P03M1(T6RDS-Q) | - | |
6022 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK40P03 | MOSFET (Metal Oxide) | DPAK | download | RoHS Compliant | 1 (Unlimited) | TK40P03M1T6RDSQ | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 30 V | 40A (Ta) | 4.5V, 10V | 10.8mOhm @ 20A, 10V | 2.3V @ 100µA | 17.5 nC @ 10 V | ±20V | 1150 pF @ 10 V | - | - | |||||||||||||||||||||||
 |
MT3S111P(TE12L,F) | 0.3863 | |
3458 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-243AA | MT3S111 | 1W | PW-MINI | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1,000 | 10.5dB | 6V | 100mA | NPN | 200 @ 30mA, 5V | 8GHz | 1.25dB @ 1GHz | ||||||||||||||||||||||||||||
 |
RN4907FE,LF(CT | 0.2700 | |
6817 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4907 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz, 200MHz | 10kOhms | 47kOhms | |||||||||||||||||||||||||||
|
TDTC143E,LM | 0.1800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TDTC143 | 320 mW | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 500µA, 10mA | 30 @ 10mA, 5V | 250 MHz | 4.7 kOhms | ||||||||||||||||||||||||||||
 |
CES521,L3F | 0.1800 | |
64 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-79, SOD-523 | CES521 | Schottky | ESC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 8,000 | Small Signal =< 200mA (Io), Any Speed | 30 V | 500 mV @ 200 mA | 30 µA @ 30 V | 125°C (Max) | 200mA | 26pF @ 0V, 1MHz | |||||||||||||||||||||||||||||
 |
RN1406,LXHF | 0.0645 | |
7373 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1406 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 4.7 kOhms | 47 kOhms | ||||||||||||||||||||||||||||
 |
TRS6E65F,S1Q | 2.7600 | |
40 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-220-2 | TRS6E65 | SiC (Silicon Carbide) Schottky | TO-220-2L | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.6 V @ 6 A | 0 ns | 30 µA @ 650 V | 175°C (Max) | 6A | 22pF @ 650V, 1MHz | ||||||||||||||||||||||||||||
|
RN2421(TE85L,F) | 0.0906 | |
3541 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Not For New Designs | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2421 | 200 mW | S-Mini | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 800 mA | 500nA | PNP - Pre-Biased | 250mV @ 2mA, 50mA | 60 @ 100mA, 1V | 200 MHz | 1 kOhms | 1 kOhms | |||||||||||||||||||||||||||
 |
SSM6J511NU,LF | 0.5000 | |
24 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | SSM6J511 | MOSFET (Metal Oxide) | 6-UDFNB (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 12 V | 14A (Ta) | 9.1mOhm @ 4A, 8V | 1V @ 1mA | 47 nC @ 4.5 V | 3350 pF @ 6 V | - | ||||||||||||||||||||||||||
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RN2907(T5L,F,T) | - | |
1143 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2907 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 10kOhms | 47kOhms | ||||||||||||||||||||||||||||
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RN2902FE,LXHF(CT | 0.3800 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN2902 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200MHz | 10kOhms | 10kOhms | ||||||||||||||||||||||||||||
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RN2119MFV(TPL3) | 0.2700 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN2119 | 150 mW | VESM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 500µA, 5mA | 120 @ 1mA, 5V | 1 kOhms | |||||||||||||||||||||||||||||
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TK155E65Z,S1X | 3.2600 | |
181 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 18A (Ta) | 10V | 155mOhm @ 9A, 10V | 4V @ 730µA | 29 nC @ 10 V | ±30V | 1635 pF @ 300 V | - | 150W (Tc) | |||||||||||||||||||||||||
|
SSM6N35AFU,LF | 0.4300 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SSM6N35 | MOSFET (Metal Oxide) | 285mW (Ta) | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 20V | 250mA (Ta) | 1.1Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V | - | ||||||||||||||||||||||||||
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SSM6P35FE,LM | - | |
2051 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-563, SOT-666 | SSM6P35 | MOSFET (Metal Oxide) | 150mW | ES6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 2 P-Channel (Dual) | 20V | 100mA | 8Ohm @ 50mA, 4V | 1V @ 1mA | - | 12.2pF @ 3V | - | ||||||||||||||||||||||||||
|
RN2903,LF | - | |
1909 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2903 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200MHz | 22kOhms | 22kOhms | ||||||||||||||||||||||||||||
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TK13A50DA(STA4,Q,M | 2.7100 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK13A50 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 12.5A (Ta) | 10V | 470mOhm @ 6.3A, 10V | 4V @ 1mA | 28 nC @ 10 V | ±30V | 1550 pF @ 25 V | - | 45W (Tc) | ||||||||||||||||||||||||
|
RN4905FE,LF(CT | 0.2700 | |
2228 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4905 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 2.2kOhms | 47kOhms | |||||||||||||||||||||||||||
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RN2904(T5L,F,T) | - | |
4954 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2904 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 47kOhms | 47kOhms | ||||||||||||||||||||||||||||
 |
RN2112,LXHF(CT | 0.0624 | |
9359 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN2112 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200 MHz | 22 kOhms | |||||||||||||||||||||||||||||
|
RN2906(T5L,F,T) | - | |
4115 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2906 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 4.7kOhms | 47kOhms | ||||||||||||||||||||||||||||
 |
2SK3670(T6CANO,A,F | - | |
5777 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-226-3, TO-92-3 Long Body | 2SK3670 | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 670mA (Tj) | |||||||||||||||||||||||||||||||||||||
|
2SA1971(TE12L,F) | 0.6500 | |
900 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-243AA | 500 mW | PW-MINI | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1,000 | 400 V | 500 mA | 10µA (ICBO) | PNP | 1V @ 10mA, 100mA | 140 @ 100mA, 5V | 35MHz | |||||||||||||||||||||||||||||
 |
TK10A80E,S4X | 2.4200 | |
117 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVIII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK10A80 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | N-Channel | 800 V | 10A (Ta) | 10V | 1Ohm @ 5A, 10V | 4V @ 1mA | 46 nC @ 10 V | ±30V | 2000 pF @ 25 V | - | 50W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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