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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Tolerance | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Voltage - Zener (Nom) (Vz) | Impedance (Max) (Zzt) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TK16A60W5,S4VX | 2.9700 |  |
50 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK16A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 1.5mA | 43 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 40W (Tc) | |||||||||||||||||||||||
 |
HN4C06J-BL(TE85L,F | 0.1088 | |
3999 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Not For New Designs | 150°C (TJ) | Surface Mount | SC-74A, SOT-753 | HN4C06 | 300mW | SMV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 120V | 100mA | 100nA (ICBO) | 2 NPN (Dual) Common Emitter | 300mV @ 1mA, 10mA | 200 @ 2mA, 6V | 100MHz | |||||||||||||||||||||||||||
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2SC2655-Y(T6STL,FM | - | |
1155 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2655 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | NPN | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||||
 |
SSM6J424TU,LF | 0.4700 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6J424 | MOSFET (Metal Oxide) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 6A (Ta) | 1.5V, 4.5V | 22.5mOhm @ 6A, 4.5V | 1V @ 1mA | 23.1 nC @ 4.5 V | +6V, -8V | 1650 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||||||
 |
SSM6L820R,LXHF | 0.5800 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6L820 | MOSFET (Metal Oxide) | 1.4W (Ta) | 6-TSOP-F | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N and P-Channel | 30V, 20V | 4A (Ta) | 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V | 1V @ 1mA, 1.2V @ 1mA | 3.2nC @ 4.5V, 6.7nC @4.5V | 310pF @ 15V, 480pF @ 10V | - | ||||||||||||||||||||||||||
 |
RN4909,LF(CT | 0.2800 | |
3137 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4909 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200MHz, 250MHz | 47kOhms | 22kOhms | ||||||||||||||||||||||||||
|
TK20A60W,S5VX | 2.9800 | |
84 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK20A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 20A (Ta) | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48 nC @ 10 V | ±30V | 1680 pF @ 300 V | - | 45W (Tc) | |||||||||||||||||||||||
 |
TK7A50D(STA4,Q,M) | 1.5000 | |
9633 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK7A50 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 7A (Ta) | 10V | 1.22Ohm @ 3.5A, 10V | 4.4V @ 1mA | 12 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 35W (Tc) | |||||||||||||||||||||||
 |
TK20N60W,S1VF | 6.4300 | |
8750 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | TK20N60 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 600 V | 20A (Ta) | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48 nC @ 10 V | ±30V | 1680 pF @ 300 V | - | 165W (Tc) | |||||||||||||||||||||||
 |
RN2604(TE85L,F) | 0.0865 | |
3829 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74, SOT-457 | RN2604 | 300mW | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 47kOhms | 47kOhms | ||||||||||||||||||||||||||
|
TK5A53D(STA4,Q,M) | 1.3700 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK5A53 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 525 V | 5A (Ta) | 10V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 540 pF @ 25 V | - | 35W (Tc) | |||||||||||||||||||||||
|
2SK3565(Q,M) | - | |
8070 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSIV | Bulk | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SK3565 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 900 V | 5A (Ta) | 10V | 2.5Ohm @ 3A, 10V | 4V @ 1mA | 28 nC @ 10 V | ±30V | 1150 pF @ 25 V | - | 45W (Tc) | |||||||||||||||||||||||
 |
TJ50S06M3L,LXHQ | 1.4600 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ50S06 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 60 V | 50A (Ta) | 6V, 10V | 13.8mOhm @ 25A, 10V | 3V @ 1mA | 124 nC @ 10 V | +10V, -20V | 6290 pF @ 10 V | - | 90W (Tc) | ||||||||||||||||||||||||
|
SSM6K809R,LXHF | 0.7000 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 175°C | Surface Mount | 6-SMD, Flat Leads | SSM6K809 | MOSFET (Metal Oxide) | 6-TSOP-F | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 6A (Ta) | 4V, 10V | 36mOhm @ 5A, 10V | 2.5V @ 100µA | 9.3 nC @ 10 V | ±20V | 550 pF @ 10 V | - | 1.5W (Ta) | ||||||||||||||||||||||||
|
SSM6N16FUTE85LF | 0.5000 | |
600 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SSM6N16 | MOSFET (Metal Oxide) | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 20V | 100mA | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | - | 9.3pF @ 3V | - | |||||||||||||||||||||||||
 |
RN1306,LF | 0.1900 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN1306 | 100 mW | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 4.7 kOhms | 47 kOhms | ||||||||||||||||||||||||||
![S1PA7[UD] Toshiba Semiconductor and Storage](/image/catalog/product/700x700.png "S1PA7[UD] Toshiba Semiconductor and Storage") |
S1PA7[UD] | - | |
1361 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tray | Active | - | 1 (Unlimited) | 190-S1PA7[UD] | EAR99 | 8541.29.0095 | 100 | ||||||||||||||||||||||||||||||||||||||||
 |
TPCA8120,LQ(CM | - | |
9207 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8120 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 45A (Ta) | 4.5V, 10V | 3mOhm @ 22.5A, 10V | 2V @ 1mA | 190 nC @ 10 V | +20V, -25V | 7420 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | |||||||||||||||||||||||
|
TPCA8057-H,LQ(M | - | |
1274 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8057 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 42A (Ta) | 4.5V, 10V | 2.6mOhm @ 21A, 10V | 2.3V @ 500µA | 61 nC @ 10 V | ±20V | 5200 pF @ 10 V | - | 1.6W (Ta), 57W (Tc) | |||||||||||||||||||||||
|
2SA1382,T6MIBF(J | - | |
4486 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1382 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 100nA (ICBO) | PNP | 500mV @ 33mA, 1A | 150 @ 500mA, 2V | 110MHz | ||||||||||||||||||||||||||||
 |
TK25E60X5,S1X | 4.5900 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK25E60 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 25A (Ta) | 10V | 140mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | |||||||||||||||||||||||
|
TPCC8001-H(TE12LQM | - | |
4160 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSV-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | TPCC8001 | MOSFET (Metal Oxide) | 8-TSON Advance (3.3x3.3) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 22A (Ta) | 4.5V, 10V | 8.3mOhm @ 11A, 10V | 2.5V @ 1mA | 27 nC @ 10 V | ±20V | 2500 pF @ 10 V | - | 700mW (Ta), 30W (Tc) | ||||||||||||||||||||||||
|
TPH6R30ANL,L1Q | 1.1500 | |
7068 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerVDFN | TPH6R30 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 100 V | 66A (Ta), 45A (Tc) | 4.5V, 10V | 6.3mOhm @ 22.5A, 10V | 2.5V @ 500µA | 55 nC @ 10 V | ±20V | 4300 pF @ 50 V | - | 2.5W (Ta), 54W (Tc) | |||||||||||||||||||||||
|
TPCC8003-H(TE12LQM | - | |
5379 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | TPCC8003 | MOSFET (Metal Oxide) | 8-TSON Advance (3.3x3.3) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 13A (Ta) | 4.5V, 10V | 16.9mOhm @ 6.5A, 10V | 2.3V @ 200µA | 17 nC @ 10 V | ±20V | 1300 pF @ 10 V | - | 700mW (Ta), 22W (Tc) | ||||||||||||||||||||||||
 |
TPC6109-H(TE85L,FM | - | |
6133 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TPC6109 | MOSFET (Metal Oxide) | VS-6 (2.9x2.8) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 30 V | 5A (Ta) | 4.5V, 10V | 59mOhm @ 2.5A, 10V | 1.2V @ 200µA | 12.3 nC @ 10 V | ±20V | 490 pF @ 10 V | - | 700mW (Ta) | ||||||||||||||||||||||||
|
TK8R2E06PL,S1X | 1.2000 | |
9645 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tube | Active | 175°C | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 50A (Tc) | 4.5V, 10V | 8.2mOhm @ 25A, 10V | 2.5V @ 300µA | 28 nC @ 10 V | ±20V | 1990 pF @ 30 V | - | 81W (Tc) | ||||||||||||||||||||||||
 |
CMZ12(TE12L,Q,M) | 0.5400 | |
9594 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | ±10% | -40°C ~ 150°C (TJ) | Surface Mount | SOD-128 | CMZ12 | 2 W | M-FLAT (2.4x3.8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0050 | 3,000 | 1.2 V @ 200 mA | 10 µA @ 8 V | 12 V | 30 Ohms | |||||||||||||||||||||||||||||
 |
CCS15S40,L3F | 0.3800 | |
48 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 2-SMD, No Lead | CCS15S40 | Schottky | CST2C | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 10,000 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 550 mV @ 1.5 A | 200 µA @ 40 V | 125°C (Max) | 1.5A | 170pF @ 0V, 1MHz | ||||||||||||||||||||||||||||
|
2SC2482(T6TOJS,F,M | - | |
3501 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2482 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 300 V | 100 mA | 1µA (ICBO) | NPN | 1V @ 1mA, 10mA | 30 @ 20mA, 10V | 50MHz | ||||||||||||||||||||||||||||
 |
SSM6N7002CFU,LF | 0.2800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SSM6N7002 | MOSFET (Metal Oxide) | 285mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 60V | 170mA | 3.9Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | 17pF @ 10V | - |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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