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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TPC8036-H(TE12L,QM | - |  |
8992 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8036 | MOSFET (Metal Oxide) | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 18A (Ta) | 4.5V, 10V | 4.5mOhm @ 9A, 10V | 2.3V @ 1mA | 49 nC @ 10 V | ±20V | 4600 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||
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2SK2854(TE12L,F) | - | |
5398 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 10 V | TO-243AA | 2SK2854 | 849MHz | MOSFET | PW-MINI | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 500mA | 23dBmW | - | - | ||||||||||||||||||||||||
 |
TK5A60W,S4VX | 2.1100 | |
7138 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK5A60 | MOSFET (Metal Oxide) | TO-220SIS | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 5.4A (Ta) | 10V | 900mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5 nC @ 10 V | ±30V | 380 pF @ 300 V | - | 30W (Tc) | ||||||||||||||||||
 |
TPN4R203NC,L1Q | 0.4595 | |
1481 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPN4R203 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 23A (Ta) | 4.5V, 10V | 4.2mOhm @ 11.5A, 10V | 2.3V @ 200µA | 24 nC @ 10 V | ±20V | 1370 pF @ 15 V | - | 700mW (Ta), 22W (Tc) | ||||||||||||||||||
 |
SSM6L13TU(T5L,F,T) | - | |
3054 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | SSM6L13 | MOSFET (Metal Oxide) | 500mW | UF6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N and P-Channel | 20V | 800mA (Ta) | 143mOhm @ 600mA, 4V, 234mOhm @ 600mA, 4V | 1V @ 1mA | - | 268pF @ 10V, 250pF @ 10V | Logic Level Gate, 1.8V Drive | |||||||||||||||||||||
 |
SSM3K72CFS,LF | 0.2000 | |
133 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM3K72 | MOSFET (Metal Oxide) | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 60 V | 170mA (Ta) | 4.5V, 10V | 3.9Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35 nC @ 4.5 V | ±20V | 17 pF @ 10 V | - | 150mW (Ta) | ||||||||||||||||||
 |
TK49N65W5,S1F | 11.8200 | |
45 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-247-3 | TK49N65 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 49.2A (Ta) | 10V | 57mOhm @ 24.6A, 10V | 4.5V @ 2.5mA | 185 nC @ 10 V | ±30V | 6500 pF @ 300 V | - | 400W (Tc) | ||||||||||||||||||
 |
TK12P60W,RVQ | 1.0490 | |
4795 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK12P60 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 600 V | 11.5A (Ta) | 10V | 340mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 100W (Tc) | ||||||||||||||||||
 |
SSM6G18NU,LF | 0.4900 | |
8410 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | SSM6G18 | MOSFET (Metal Oxide) | 6-µDFN (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 2A (Ta) | 1.5V, 4.5V | 112mOhm @ 1A, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | ±8V | 270 pF @ 10 V | Schottky Diode (Isolated) | 1W (Ta) | ||||||||||||||||||
 |
SSM3K17SU,LF | - | |
4802 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | - | Surface Mount | SC-70, SOT-323 | SSM3K17 | MOSFET (Metal Oxide) | USM | - | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 50 V | 100mA (Ta) | 20Ohm @ 10mA, 4V | 1.5V @ 1µA | 7 pF @ 3 V | - | 150mW (Ta) | ||||||||||||||||||||||
 |
XPH3R114MC,L1XHQ | 2.2500 | |
2968 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | XPH3R114 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | P-Channel | 40 V | 100A (Ta) | 4.5V, 10V | 3.1mOhm @ 50A, 10V | 2.1V @ 1mA | 230 nC @ 10 V | +10V, -20V | 9500 pF @ 10 V | - | 960mW (Ta), 170W (Tc) | |||||||||||||||||||
 |
2SK3906(Q) | - | |
5343 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | 2SK3906 | MOSFET (Metal Oxide) | TO-3P(N) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 20A (Ta) | 10V | 330mOhm @ 10A, 10V | 4V @ 1mA | 60 nC @ 10 V | ±30V | 4250 pF @ 25 V | - | 150W (Tc) | |||||||||||||||||||
 |
TPH4R008QM,LQ | 1.5600 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-SOP Advance (5x5.75) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 80 V | 86A (Tc) | 6V, 10V | 4mOhm @ 43A, 10V | 3.5V @ 600µA | 57 nC @ 10 V | ±20V | 5300 pF @ 40 V | - | 960mW (Ta), 170W (Tc) | ||||||||||||||||||||
 |
TK55S10N1,LXHQ | 1.6800 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK55S10 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 100 V | 55A (Ta) | 10V | 6.5mOhm @ 27.5A, 10V | 4V @ 500µA | 49 nC @ 10 V | ±20V | 3280 pF @ 10 V | - | 157W (Tc) | |||||||||||||||||||
|
TK090A65Z,S4X | 4.7900 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK090A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 30A (Ta) | 10V | 90mOhm @ 15A, 10V | 4V @ 1.27mA | 47 nC @ 10 V | ±30V | 2780 pF @ 300 V | - | 45W (Tc) | ||||||||||||||||||
 |
2SK3670(T6CANO,A,F | - | |
5777 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-226-3, TO-92-3 Long Body | 2SK3670 | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 670mA (Tj) | |||||||||||||||||||||||||||||||
|
2SK2962(T6CANO,F,M | - | |
2604 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-226-3, TO-92-3 Long Body | 2SK2962 | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 1A (Tj) | |||||||||||||||||||||||||||||||
 |
TJ15S06M3L(T6L1,NQ | 1.3300 | |
2224 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ15S06 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 60 V | 15A (Ta) | 6V, 10V | 50mOhm @ 7.5A, 10V | 3V @ 1mA | 36 nC @ 10 V | +10V, -20V | 1770 pF @ 10 V | - | 41W (Tc) | ||||||||||||||||||
|
TJ80S04M3L(T6L1,NQ | 1.2600 | |
5815 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ80S04 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 40 V | 80A (Ta) | 6V, 10V | 5.2mOhm @ 40A, 10V | 3V @ 1mA | 158 nC @ 10 V | +10V, -20V | 7770 pF @ 10 V | - | 100W (Tc) | ||||||||||||||||||
 |
TK12A60D(STA4,Q,M) | 3.0200 | |
45 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK12A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 12A (Ta) | 10V | 550mOhm @ 6A, 10V | 4V @ 1mA | 38 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 45W (Tc) | ||||||||||||||||||
 |
TPWR8503NL,L1Q | 2.7600 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerWDFN | TPWR8503 | MOSFET (Metal Oxide) | 8-DSOP Advance | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 150A (Tc) | 4.5V, 10V | 0.85mOhm @ 50A, 10V | 2.3V @ 1mA | 74 nC @ 10 V | ±20V | 6900 pF @ 15 V | - | 800mW (Ta), 142W (Tc) | ||||||||||||||||||
 |
SSM6P35FE,LM | - | |
2051 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-563, SOT-666 | SSM6P35 | MOSFET (Metal Oxide) | 150mW | ES6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 2 P-Channel (Dual) | 20V | 100mA | 8Ohm @ 50mA, 4V | 1V @ 1mA | - | 12.2pF @ 3V | - | ||||||||||||||||||||
|
TK31A60W,S4VX | 7.4700 | |
7047 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK31A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 45W (Tc) | ||||||||||||||||||
|
TPH4R50ANH,L1Q | 2.7900 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH4R50 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 100 V | 60A (Tc) | 10V | 4.5mOhm @ 30A, 10V | 4V @ 1mA | 58 nC @ 10 V | ±20V | 5200 pF @ 50 V | - | 1.6W (Ta), 78W (Tc) | ||||||||||||||||||
|
TJ50S06M3L(T6L1,NQ | 1.9400 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ50S06 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 60 V | 50A (Ta) | 6V, 10V | 13.8mOhm @ 25A, 10V | 3V @ 1mA | 124 nC @ 10 V | +10V, -20V | 6290 pF @ 10 V | - | 90W (Tc) | ||||||||||||||||||
 |
SSM3K116TU,LF | 0.5400 | |
41 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | SSM3K116 | MOSFET (Metal Oxide) | UFM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 2.2A (Ta) | 2.5V, 4.5V | 100mOhm @ 500mA, 4.5V | 1.1V @ 100µA | ±12V | 245 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||||
 |
TK190E65Z,S1X | 2.7800 | |
156 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 15A (Ta) | 10V | 190mOhm @ 7.5A, 10V | 4V @ 610µA | 25 nC @ 10 V | ±30V | 1370 pF @ 300 V | - | 130W (Tc) | |||||||||||||||||||
|
TK35S04K3L(T6L1,NQ | 1.4100 | |
5894 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK35S04 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 40 V | 35A (Ta) | 6V, 10V | 10.3mOhm @ 17.5A, 10V | 3V @ 1mA | 28 nC @ 10 V | ±20V | 1370 pF @ 10 V | - | 58W (Tc) | ||||||||||||||||||
 |
RN1302,LXHF | 0.3900 | |
222 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN1302 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 10 kOhms | 10 kOhms | ||||||||||||||||||||||
 |
TK3R9E10PL,S1X | 2.3700 | |
100 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-220-3 | TK3R9E10 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 100A (Tc) | 4.5V, 10V | 3.9mOhm @ 50A, 10V | 2.5V @ 1mA | 96 nC @ 10 V | ±20V | 6320 pF @ 50 V | - | 230W (Tc) |
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Daily average RFQ Volume
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