Tel: +86-0755-83501315
Email: sales@sic-components.com
Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Voltage - Breakdown (V(BR)GSS) | Current - Drain (Idss) @ Vds (Vgs=0) | Voltage - Cutoff (VGS off) @ Id | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Current Drain (Id) - Max |
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TK065Z65Z,S1F | 7.8900 | ![]() |
4529 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tube | Active | 150°C | Through Hole | TO-247-4 | MOSFET (Metal Oxide) | TO-247-4L(T) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 650 V | 38A (Ta) | 10V | 65mOhm @ 19A, 10V | 4V @ 1.69mA | 62 nC @ 10 V | ±30V | 3650 pF @ 300 V | - | 270W (Tc) | |||||||||||||||||||||||||
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TK2R4E08QM,S1X | 3.1800 | ![]() |
196 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSX-H | Tube | Active | 175°C | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 80 V | 120A (Tc) | 6V, 10V | 2.44mOhm @ 50A, 10V | 3.5V @ 2.2mA | 178 nC @ 10 V | ±20V | 13000 pF @ 40 V | - | 300W (Tc) | |||||||||||||||||||||||||
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TJ9A10M3,S4Q | - | ![]() |
3753 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TJ9A10 | MOSFET (Metal Oxide) | TO-220SIS | - | 264-TJ9A10M3S4Q | EAR99 | 8541.29.0095 | 50 | P-Channel | 100 V | 9A (Ta) | 10V | 170mOhm @ 4.5A, 10V | 4V @ 1mA | 47 nC @ 10 V | ±20V | 2900 pF @ 10 V | - | 19W (Tc) | |||||||||||||||||||||||||
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TK380P60Y,RQ | 1.6900 | ![]() |
7 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK380P60 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 600 V | 9.7A (Tc) | 10V | 380mOhm @ 4.9A, 10V | 4V @ 360µA | 20 nC @ 10 V | ±30V | 590 pF @ 300 V | - | 30W (Tc) | ||||||||||||||||||||||||
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TK110Z65Z,S1F | 6.4000 | ![]() |
25 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tube | Active | 150°C | Through Hole | TO-247-4 | MOSFET (Metal Oxide) | TO-247-4L(T) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 650 V | 24A (Ta) | 10V | 110mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 190W (Tc) | |||||||||||||||||||||||||
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RN1902T5LFT | - | ![]() |
4506 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN1902 | 200mW | US6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250MHz | 10kOhms | 10kOhms | |||||||||||||||||||||||||||
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XPW4R10ANB,L1XHQ | 2.3200 | ![]() |
22 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 175°C | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | 8-DSOP Advance | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 100 V | 70A | 6V, 10V | 4.1mOhm @ 35A, 10V | 3.5V @ 1mA | 75 nC @ 10 V | ±20V | 4970 pF @ 10 V | Standard | 170W (Tc) | |||||||||||||||||||||||||
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TK5A80E,S4X | 1.4300 | ![]() |
50 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 800 V | 5A (Ta) | 10V | 2.4Ohm @ 2.5A, 10V | 4V @ 500µA | 20 nC @ 10 V | ±30V | 950 pF @ 25 V | - | 40W (Tc) | |||||||||||||||||||||||||
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SSM6L56FE,LM | 0.3800 | ![]() |
45 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-563, SOT-666 | SSM6L56 | MOSFET (Metal Oxide) | 150mW (Ta) | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | N and P-Channel | 20V | 800mA (Ta) | 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 10V | 55pF @ 10V, 100pF @ 10V | Logic Level Gate, 1.5V Drive | ||||||||||||||||||||||||||
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TK7A65D(STA4,Q,M) | 2.2100 | ![]() |
50 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK7A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 7A (Ta) | 10V | 980mOhm @ 3.5A, 10V | 4V @ 1mA | 24 nC @ 10 V | ±30V | 1200 pF @ 25 V | - | 45W (Tc) | ||||||||||||||||||||||||
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RN1707JE(TE85L,F) | 0.4000 | ![]() |
4 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-553 | RN1707 | 100mW | ESV | download | 1 (Unlimited) | 264-RN1707JE(TE85LF)TR | EAR99 | 8541.21.0075 | 4,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 10kOhms | 47kOhms | |||||||||||||||||||||||||||
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TK31J60W,S1VQ | 9.3800 | ![]() |
15 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TK31J60 | MOSFET (Metal Oxide) | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | ||||||||||||||||||||||||
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TK39J60W5,S1VQ | 12.2700 | ![]() |
3287 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TK39J60 | MOSFET (Metal Oxide) | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 600 V | 38.8A (Ta) | 10V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 135 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 270W (Tc) | ||||||||||||||||||||||||
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RN4911FE,LXHF(CT | 0.3800 | ![]() |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4911 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200MHz, 250MHz | 10kOhms | - | ||||||||||||||||||||||||||||
CMG05(TE12L,Q,M) | - | ![]() |
3727 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOD-128 | CMG05 | Standard | M-FLAT (2.4x3.8) | download | RoHS Compliant | 1 (Unlimited) | CMG05(TE12LQM) | EAR99 | 8541.10.0080 | 3,000 | Standard Recovery >500ns, > 200mA (Io) | 400 V | 1.1 V @ 1 A | 10 µA @ 400 V | -40°C ~ 150°C | 1A | - | |||||||||||||||||||||||||||||
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RN2111CT(TPL3) | - | ![]() |
9861 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-101, SOT-883 | RN2111 | 50 mW | CST3 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 20 V | 50 mA | 100nA (ICBO) | PNP - Pre-Biased | 150mV @ 250µA, 5mA | 300 @ 1mA, 5V | 10 kOhms | ||||||||||||||||||||||||||||||
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TPCA8057-H,LQ(M | - | ![]() |
1274 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8057 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 42A (Ta) | 4.5V, 10V | 2.6mOhm @ 21A, 10V | 2.3V @ 500µA | 61 nC @ 10 V | ±20V | 5200 pF @ 10 V | - | 1.6W (Ta), 57W (Tc) | ||||||||||||||||||||||||
CMG06(TE12L,Q,M) | - | ![]() |
6508 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOD-128 | CMG06 | Standard | M-FLAT (2.4x3.8) | download | RoHS Compliant | 1 (Unlimited) | CMG06(TE12LQM) | EAR99 | 8541.10.0080 | 3,000 | Standard Recovery >500ns, > 200mA (Io) | 600 V | 1.1 V @ 1 A | 10 µA @ 600 V | -40°C ~ 150°C | 1A | - | |||||||||||||||||||||||||||||
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TK13A60D(STA4,Q,M) | - | ![]() |
6841 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK13A60 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 600 V | 13A (Ta) | 10V | 430mOhm @ 6.5A, 10V | 4V @ 1mA | 40 nC @ 10 V | ±30V | 2300 pF @ 25 V | - | 50W (Tc) | ||||||||||||||||||||||||
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HN4K03JUTE85LF | - | ![]() |
2107 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | HN4K03 | MOSFET (Metal Oxide) | 5-SSOP | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 100mA (Ta) | 2.5V | 12Ohm @ 10mA, 2.5V | - | 10V | 8.5 pF @ 3 V | - | 200mW (Ta) | ||||||||||||||||||||||||||
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2SC2713-BL,LF | 0.3100 | ![]() |
17 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SC2713 | 150 mW | TO-236 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 120 V | 100 mA | 100nA (ICBO) | NPN | 300mV @ 1mA, 10mA | 350 @ 2mA, 6V | 100MHz | ||||||||||||||||||||||||||||
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TK7S10N1Z,LXHQ | 0.8900 | ![]() |
7428 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK7S10 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 100 V | 7A (Ta) | 10V | 48mOhm @ 3.5A, 10V | 4V @ 100µA | 7.1 nC @ 10 V | ±20V | 470 pF @ 10 V | - | 50W (Tc) | |||||||||||||||||||||||||
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RN2962(TE85L,F) | 0.4800 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2962 | 200mW | US6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200MHz | 10kOhms | 10kOhms | |||||||||||||||||||||||||||
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RN2105ACT(TPL3) | 0.0527 | ![]() |
10 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-101, SOT-883 | RN2105 | 100 mW | CST3 | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 50 V | 80 mA | 500nA | PNP - Pre-Biased | 150mV @ 250µA, 5mA | 80 @ 10mA, 5V | 2.2 kOhms | 47 kOhms | ||||||||||||||||||||||||||||
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2SC5201(T6MURATAFM | - | ![]() |
5065 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC5201 | 900 mW | TO-92MOD | download | 1 (Unlimited) | 2SC5201T6MURATAFM | EAR99 | 8541.21.0095 | 1 | 600 V | 50 mA | 1µA (ICBO) | NPN | 1V @ 500mA, 20mA | 100 @ 20mA, 5V | - | ||||||||||||||||||||||||||||
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2SK209-GR(TE85L,F) | 0.4700 | ![]() |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SK209 | 150 mW | SC-59 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 13pF @ 10V | 50 V | 14 mA @ 10 V | 1.5 V @ 100 nA | 14 mA | |||||||||||||||||||||||||||||
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TPCC8001-H(TE12LQM | - | ![]() |
4160 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSV-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | TPCC8001 | MOSFET (Metal Oxide) | 8-TSON Advance (3.3x3.3) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 22A (Ta) | 4.5V, 10V | 8.3mOhm @ 11A, 10V | 2.5V @ 1mA | 27 nC @ 10 V | ±20V | 2500 pF @ 10 V | - | 700mW (Ta), 30W (Tc) | |||||||||||||||||||||||||
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T2N7002AK,LM | 0.1500 | ![]() |
29 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | T2N7002 | MOSFET (Metal Oxide) | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 60 V | 200mA (Ta) | 4.5V, 10V | 3.9Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35 nC @ 4.5 V | ±20V | 17 pF @ 10 V | - | 320mW (Ta) | ||||||||||||||||||||||||
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SSM6J50TU,LF | 0.3900 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6J50 | MOSFET (Metal Oxide) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 2.5A (Ta) | 2V, 4.5V | 64mOhm @ 1.5A, 4.5V | 1.2V @ 200µA | ±10V | 800 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||||||||||
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2SC2235-Y(T6FJT,FM | - | ![]() |
6913 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2235 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | NPN | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz |
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