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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RN4981FE,LF(CT | 0.2600 |  |
4 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4981 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 250MHz, 200MHz | 4.7kOhms | 4.7kOhms | |||||||||||||||||||||||||||
 |
RN1112,LXHF(CT | 0.0624 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1112 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250 MHz | 22 kOhms | |||||||||||||||||||||||||||||
 |
2SA1020-Y,T6NSF(J | - | |
2103 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | 2SA1020-YT6NSF(J | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||||
 |
TRS2E65H,S1Q | 1.5500 | |
300 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2L | - | ROHS3 Compliant | 1 (Unlimited) | 264-TRS2E65H,S1Q | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.35 V @ 2 A | 0 ns | 40 µA @ 650 V | 175°C | 2A | 135pF @ 1V, 1MHz | ||||||||||||||||||||||||||||
|
2SA1020-Y(F,M) | - | |
9152 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | |||||||||||||||||||||||||||||
|
2SA949-Y(T6SHRP,FM | - | |
5283 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA949 | 800 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 150 V | 50 mA | 100nA (ICBO) | PNP | 800mV @ 1mA, 10A | 70 @ 10mA, 5V | 120MHz | |||||||||||||||||||||||||||||
 |
TTC0002(Q) | 3.3400 | |
6091 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Active | 150°C (TJ) | Through Hole | TO-3PL | TTC0002 | 180 W | TO-3P(L) | download | RoHS Compliant | 1 (Unlimited) | TTC0002Q | EAR99 | 8541.29.0075 | 100 | 160 V | 18 A | 1µA (ICBO) | NPN | 2V @ 900mA, 9A | 80 @ 1A, 5V | 30MHz | |||||||||||||||||||||||||||
|
2SC5201(T6MURATAFM | - | |
5065 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC5201 | 900 mW | TO-92MOD | download | 1 (Unlimited) | 2SC5201T6MURATAFM | EAR99 | 8541.21.0095 | 1 | 600 V | 50 mA | 1µA (ICBO) | NPN | 1V @ 500mA, 20mA | 100 @ 20mA, 5V | - | ||||||||||||||||||||||||||||
|
RN4986FE,LF(CT | 0.2600 | |
4319 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4986 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz, 200MHz | 4.7kOhms | 47kOhms | |||||||||||||||||||||||||||
 |
SSM6J412TU,LF | 0.3700 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6J412 | MOSFET (Metal Oxide) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 4A (Ta) | 1.5V, 4.5V | 42.7mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | ±8V | 840 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||||||||||
 |
CRG09A,LQ(M | - | |
8559 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-123F | CRG09 | Standard | S-FLAT (1.6x3.5) | download | RoHS Compliant | 1 (Unlimited) | CRG09ALQ(M | EAR99 | 8541.10.0080 | 3,000 | Standard Recovery >500ns, > 200mA (Io) | 400 V | 1.1 V @ 700 mA | 5 µA @ 400 V | 150°C (Max) | 1A | - | ||||||||||||||||||||||||||||
 |
HN4A51JTE85LF | 0.4500 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-74A, SOT-753 | HN4A51 | 300mW | SMV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 120V | 100mA | 100nA (ICBO) | 2 PNP (Dual) | 300mV @ 1mA, 10mA | 200 @ 2mA, 6V | 100MHz | ||||||||||||||||||||||||||||
|
TRS10V65H,LQ | 2.8900 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 4-VSFN Exposed Pad | SiC (Silicon Carbide) Schottky | 4-DFN-EP (8x8) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 2,500 | No Recovery Time > 500mA (Io) | 650 V | 1.35 V @ 10 A | 0 ns | 100 µA @ 650 V | 175°C | 10A | 649pF @ 1V, 1MHz | |||||||||||||||||||||||||||||
|
2SC3328-Y,HOF(M | - | |
3114 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC3328 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 80 V | 2 A | 1µA (ICBO) | NPN | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | |||||||||||||||||||||||||||||
|
2SC2235-O(FA1,F,M) | - | |
9631 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2235 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | NPN | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | |||||||||||||||||||||||||||||
 |
TK6P53D(T6RSS-Q) | 1.4300 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK6P53 | MOSFET (Metal Oxide) | D-Pak | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 525 V | 6A (Ta) | 10V | 1.3Ohm @ 3A, 10V | 4.4V @ 1mA | 12 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 100W (Tc) | ||||||||||||||||||||||||
 |
SSM6K361NU,LF | 0.4500 | |
27 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-WDFN Exposed Pad | SSM6K361 | MOSFET (Metal Oxide) | 6-UDFNB (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 100 V | 3.5A (Ta) | 4.5V, 10V | 69mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2 nC @ 4.5 V | ±20V | 430 pF @ 15 V | - | 1.25W (Ta) | ||||||||||||||||||||||||
|
TRS4E65H,S1Q | 1.8500 | |
400 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2L | - | ROHS3 Compliant | 1 (Unlimited) | 264-TRS4E65H,S1Q | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.35 V @ 4 A | 0 ns | 55 µA @ 650 V | 175°C | 4A | 263pF @ 1V, 1MHz | ||||||||||||||||||||||||||||
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RN1507(TE85L,F) | 0.3500 | |
17 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74A, SOT-753 | RN1507 | 300mW | SMV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 10kOhms | 47kOhms | |||||||||||||||||||||||||||
|
2SK3466(TE24L,Q) | - | |
2985 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SC-97 | 2SK3466 | MOSFET (Metal Oxide) | 4-TFP (9.2x9.2) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 500 V | 5A (Ta) | 10V | 1.5Ohm @ 5A, 10V | 4V @ 1mA | 17 nC @ 10 V | ±30V | 780 pF @ 10 V | - | 50W (Tc) | |||||||||||||||||||||||||
|
RN1509(TE85L,F) | 0.0865 | |
2966 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74A, SOT-753 | RN1509 | 300mW | SMV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250MHz | 47kOhms | 22kOhms | |||||||||||||||||||||||||||
 |
TRS12N65FB,S1F(S | - | |
3099 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-247-3 | TRS12N65 | SiC (Silicon Carbide) Schottky | TO-247 | - | RoHS Compliant | 1 (Unlimited) | TRS12N65FBS1F(S | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 6A (DC) | 1.7 V @ 6 A | 0 ns | 90 µA @ 650 V | 175°C (Max) | |||||||||||||||||||||||||||
|
RN2506(TE85L,F) | 0.3500 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74A, SOT-753 | RN2506 | 300mW | SMV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 4.7kOhms | 47kOhms | |||||||||||||||||||||||||||
 |
SSM3J332R,LF | 0.4500 | |
181 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SSM3J332 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 6A (Ta) | 1.8V, 10V | 42mOhm @ 5A, 10V | 1.2V @ 1mA | 8.2 nC @ 4.5 V | ±12V | 560 pF @ 15 V | - | 1W (Ta) | |||||||||||||||||||||||
 |
TPH2900ENH,L1Q | 2.5800 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH2900 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 200 V | 33A (Ta) | 10V | 29mOhm @ 16.5A, 10V | 4V @ 1mA | 22 nC @ 10 V | ±20V | 2200 pF @ 100 V | - | 78W (Tc) | ||||||||||||||||||||||||
 |
TBAT54A,LM | 0.2100 | |
5743 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TBAT54 | Schottky | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 1 Pair Common Anode | 30 V | 100mA | 580 mV @ 100 mA | 1.5 ns | 2 µA @ 25 V | 150°C (Max) | ||||||||||||||||||||||||||||
 |
RN4602TE85LF | 0.3800 | |
1144 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74, SOT-457 | RN4602 | 300mW | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200MHz | 10kOhms | 10kOhms | |||||||||||||||||||||||||||
|
SSM6P36FE,LM | 0.4300 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6P36 | MOSFET (Metal Oxide) | 150mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 2 P-Channel (Dual) | 20V | 330mA | 1.31Ohm @ 100mA, 4.5V | 1V @ 1mA | 1.2nC @ 4V | 43pF @ 10V | Logic Level Gate | ||||||||||||||||||||||||||
|
2SC2235-Y,F(J | - | |
8296 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2235 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | NPN | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | |||||||||||||||||||||||||||||
 |
TK12A53D(STA4,Q,M) | 2.5900 | |
4943 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK12A53 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 525 V | 12A (Ta) | 10V | 580mOhm @ 6A, 10V | 4V @ 1mA | 25 nC @ 10 V | ±30V | 1350 pF @ 25 V | - | 45W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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