Nexperia recently announced the addition of two new 1200V, 20A silicon carbide (SiC) Schottky diodes—PSC20120J and PSC20120L—to its power electronics portfolio, further expanding its product landscape in high-performance semiconductors. Specifically designed to address the increasingly stringent demands for ultra-low power rectification in industrial scenarios, these devices enable efficient energy conversion in high-power AI server power supplies, telecom system power modules, solar inverters, and other applications, injecting new momentum into technological upgrades in the industrial power sector.
In terms of performance, the new SiC Schottky diodes achieve an excellent figure of merit (QC×VF) by leveraging their capacitance switching characteristics stable across the entire temperature range and zero recovery loss advantages. Their switching performance remains nearly unaffected by current fluctuations or changes in switching frequency. The core technical highlight lies in the adoption of a merged PiN Schottky (MPS) structure, endowing them with exceptional surge current tolerance. The high peak forward surge current (IFSM) index significantly reduces the need for external protection circuits, simplifying system architecture while helping engineers achieve efficiency breakthroughs in compact, high-reliability high-voltage applications.
In terms of packaging design, the PSC20120J uses a Real-2-Pin D2PAK R2P (TO-263-2) surface-mount package, while the PSC20120L features a Real-2-Pin TO247 R2P (TO-247-2) through-hole package. Both high-temperature-resistant packages maintain device reliability at an extreme operating temperature of 175°C, perfectly adapting to the harsh requirements of industrial environments. As an industry benchmark with mature semiconductor technology and a reliable supply chain, Nexperia provides designers with comprehensive confidence from performance to delivery, backed by its deep accumulation in power devices.
The launch of these new products not only demonstrates Nexperia's technological breakthroughs in SiC power devices but also, with the design philosophy of "efficiency, reliability, and simplicity," provides core component support for the miniaturization and green transformation of industrial power systems. It is expected to redefine the industry application standards for high-voltage power devices.
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