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FETs, MOSFETs(55612)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BS170 | - |  |
9226 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Obsolete | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | MOSFET (Metal Oxide) | TO-92 | download | 0000.00.0000 | 1 | N-Channel | 60 V | 300mA (Ta) | 5Ohm @ 200mA, 10V | 3V @ 1mA | 60 pF @ 10 V | - | ||||||||||||||||||||||
 |
IRFU7440PBF | 0.7300 | |
108 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | IPAK (TO-251AA) | download | EAR99 | 8542.39.0001 | 409 | N-Channel | 40 V | 90A (Tc) | 6V, 10V | 2.4mOhm @ 90A, 10V | 3.9V @ 100µA | 134 nC @ 10 V | ±20V | 4610 pF @ 25 V | - | 140W (Tc) | ||||||||||||||||
 |
FDMS86152 | 2.6400 | |
1 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-PQFN (5x6) | download | EAR99 | 8542.39.0001 | 114 | N-Channel | 100 V | 14A (Ta), 45A (Tc) | 6V, 10V | 6mOhm @ 14A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±20V | 3370 pF @ 50 V | - | 2.7W (Ta), 125W (Tc) | ||||||||||||||||
 |
PSMN2R9-25YLC | 1.0000 | |
9589 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | download | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||||
 |
AUIRF1405ZSTRL | 1.0000 | |
6259 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 55 V | 150A (Tc) | 10V | 4.9mOhm @ 75A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 4780 pF @ 25 V | - | 230W (Tc) | ||||||||||||||||
 |
ECH8304-TL-E | - | |
3757 | 0.00000000 | Sanyo | - | Bulk | Obsolete | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | 8-ECH | - | Not applicable | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | P-Channel | 12 V | 9.5A (Ta) | 16mOhm @ 4.5A, 4.5V | - | 33 nC @ 4.5 V | 3180 pF @ 6 V | - | 1.6W (Ta) | |||||||||||||||
|
IRF3710LPBF | 1.0000 | |
2914 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | TO-262 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 100 V | 57A (Tc) | 10V | 23mOhm @ 28A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 3130 pF @ 25 V | - | 200W (Tc) | |||||||||||||
 |
FDD8882 | 0.5100 | |
11 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252, (D-Pak) | download | EAR99 | 8542.39.0001 | 588 | N-Channel | 30 V | 12.6A (Ta), 55A (Tc) | 4.5V, 10V | 11.5mOhm @ 35A, 10V | 2.5V @ 250µA | 33 nC @ 10 V | ±20V | 1260 pF @ 15 V | - | 55W (Tc) | ||||||||||||||||
|
FDD8770 | 0.4000 | |
79 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252, (D-Pak) | download | EAR99 | 8542.39.0001 | 742 | N-Channel | 25 V | 35A (Tc) | 4.5V, 10V | 4mOhm @ 35A, 10V | 2.5V @ 250µA | 73 nC @ 10 V | ±20V | 3720 pF @ 13 V | - | 115W (Tc) | ||||||||||||||||
 |
FDPF5N50NZF | 0.7900 | |
552 | 0.00000000 | Fairchild Semiconductor | UniFET-II™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 500 V | 4.2A (Tc) | 10V | 1.75Ohm @ 2.1A, 10V | 5V @ 250µA | 12 nC @ 10 V | ±25V | 485 pF @ 25 V | - | 30W (Tc) | ||||||||||||||||
|
PSMN7R8-120PS127 | - | |
4606 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | download | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||||
|
BLM10D1822-61ABGZ | 50.4100 | |
173 | 0.00000000 | Ampleon USA Inc. | BLM | Tray | Active | 65 V | Surface Mount | OMP-400-8G-1 | BLM10 | 1.8GHz ~ 2.2GHz | LDMOS | OMP-400-8G-1 | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0095 | 90 | Dual, Common Source | 1.4µA | 108 mA | 48.3dBm | 28.5dB | - | 28 V | |||||||||||||||
|
ART1K6PHZ | - | |
3926 | 0.00000000 | Ampleon USA Inc. | ART | Tray | Active | 177 V | Surface Mount | OMP-1230-4G-1 | ART1K6 | 1MHz ~ 450MHz | LDMOS | OMP-1230-4G-1 | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0095 | 20 | Dual, Common Source | 960nA | 50 mA | 1600W | 27.4dB | - | 55 V | |||||||||||||||
 |
WP2806008UH | 52.1750 | |
12 | 0.00000000 | WAVEPIA.,Co.Ltd | - | Box | Active | 160 V | Through Hole | 360BH | 6GHz | GaN HEMT | 360BH | download | ROHS3 Compliant | 1 (Unlimited) | 3140-WP2806008UH | EAR99 | 8541.29.0075 | 2 | - | 70 mA | 6W | 11dB | - | 28 V | |||||||||||||||||
 |
WP2806025UH | 151.9350 | |
20 | 0.00000000 | WAVEPIA.,Co.Ltd | - | Box | Active | 160 V | Through Hole | 360BH | 5GHz | GaN HEMT | 360BH | download | ROHS3 Compliant | 1 (Unlimited) | 3140-WP2806025UH | EAR99 | 8541.29.0075 | 2 | - | 100 mA | 25W | 17.4dB | - | 28 V | |||||||||||||||||
 |
IPD90P03P404ATMA2 | 2.7500 | |
11 | 0.00000000 | Infineon Technologies | Automotive, AEC-Q101, OptiMOS®-P2 | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IPD90 | MOSFET (Metal Oxide) | PG-TO252-3-11 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 30 V | 90A (Tc) | 4.5mOhm @ 90A, 10V | 4V @ 253µA | 130 nC @ 10 V | ±20V | 10300 pF @ 25 V | - | 137W (Tc) | |||||||||||||
 |
IPP80P03P4L04AKSA2 | 3.1200 | |
5576 | 0.00000000 | Infineon Technologies | Automotive, AEC-Q101, OptiMOS®-P2 | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | IPP80P03 | MOSFET (Metal Oxide) | PG-TO220-3-1 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | P-Channel | 30 V | 80A (Tc) | 4.4mOhm @ 80A, 10V | 2V @ 253µA | 160 nC @ 10 V | +5V, -16V | 11300 pF @ 25 V | - | 137W (Tc) | |||||||||||||
 |
AIMW120R045M1XKSA1 | 26.9300 | |
242 | 0.00000000 | Infineon Technologies | Automotive, AEC-Q101, CoolSiC™ | Tube | Active | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | AIMW120 | SiCFET (Silicon Carbide) | PG-TO247-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 52A (Tc) | 59mOhm @ 20A, 15V | 5.7V @ 10mA | 57 nC @ 15 V | +20V, -7V | 2130 pF @ 800 V | - | 228W (Tc) | |||||||||||||
|
IPD90P03P4L04ATMA2 | 2.7500 | |
9 | 0.00000000 | Infineon Technologies | Automotive, AEC-Q101, OptiMOS®-P2 | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IPD90 | MOSFET (Metal Oxide) | PG-TO252-3-11 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 30 V | 90A (Tc) | 4.1mOhm @ 90A, 10V | 2V @ 253µA | 160 nC @ 10 V | +5V, -16V | 11300 pF @ 25 V | - | 137W (Tc) | |||||||||||||
 |
WP28007025 | 109.7260 | |
65 | 0.00000000 | WAVEPIA.,Co.Ltd | - | Box | Active | 28 V | Die | 7GHz | GaN HEMT | Die | download | ROHS3 Compliant | 1 (Unlimited) | 3140-WP28007025 | EAR99 | 8541.29.0040 | 5 | 800mA | 100 mA | 25W | 17dB | - | 28 V | ||||||||||||||||||
 |
FDMA1023PZ | - | |
3139 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | FDMA1023 | MOSFET (Metal Oxide) | 700mW | 6-MicroFET (2x2) | download | EAR99 | 8542.39.0001 | 1 | 2 P-Channel (Dual) | 20V | 3.7A | 72mOhm @ 3.7A, 4.5V | 1.5V @ 250µA | 12nC @ 4.5V | 655pF @ 10V | Logic Level Gate | |||||||||||||||||
 |
FQP6N60C | 0.8500 | |
20 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220-3 | download | EAR99 | 8542.39.0001 | 353 | N-Channel | 600 V | 5.5A (Tc) | 10V | 2Ohm @ 2.75A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±30V | 810 pF @ 25 V | - | 125W (Tc) | ||||||||||||||||
|
BUK9609-75A,118 | 1.5200 | |
760 | 0.00000000 | NXP USA Inc. | Automotive, AEC-Q101, TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | EAR99 | 8541.29.0095 | 198 | N-Channel | 75 V | 75A (Tc) | 4.5V, 10V | 8.5mOhm @ 25A, 10V | 2V @ 1mA | ±10V | 8840 pF @ 25 V | - | 230W (Tc) | |||||||||||||||||
 |
FDMA6023PZT | 0.3800 | |
369 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | FDMA6023 | MOSFET (Metal Oxide) | 700mW | 6-MicroFET (2x2) | download | EAR99 | 8542.39.0001 | 792 | 2 P-Channel (Dual) | 20V | 3.6A | 60mOhm @ 3.6A, 4.5V | 1.5V @ 250µA | 17nC @ 4.5V | 885pF @ 10V | Logic Level Gate | |||||||||||||||||
 |
NVMD3P03R2G | - | |
3256 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | NVMD3 | MOSFET (Metal Oxide) | 730mW (Ta) | 8-SOIC | download | EAR99 | 8542.39.0001 | 1 | 2 P-Channel (Dual) | 30V | 2.34A (Tj) | 85mOhm @ 3.05A, 10V | 2.5V @ 250µA | 25nC @ 10V | 750pF @ 24V | - | |||||||||||||||||
 |
NTD24N06LT4G | - | |
9924 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | NTD24 | MOSFET (Metal Oxide) | DPAK | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 60 V | 24A (Ta) | 5V | 45mOhm @ 10A, 5V | 2V @ 250µA | 32 nC @ 5 V | ±15V | 1140 pF @ 25 V | - | 1.36W (Ta), 62.5W (Tj) | |||||||||||||||
|
BUK7Y20-30B115 | 1.0000 | |
7818 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | download | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||||
|
IPA50R250CP | 1.5600 | |
220 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | PG-TO220-3-31 | download | EAR99 | 8542.39.0001 | 220 | N-Channel | 500 V | 13A (Tc) | 10V | 250mOhm @ 7.8A, 10V | 3.5V @ 520µA | 36 nC @ 10 V | ±20V | 1420 pF @ 100 V | - | 33W (Tc) | ||||||||||||||||
|
BUK7Y65-100EX | - | |
6099 | 0.00000000 | NXP USA Inc. | TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | BUK7Y65 | MOSFET (Metal Oxide) | LFPAK56, Power-SO8 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 100 V | 19A (Tc) | 10V | 65mOhm @ 5A, 10V | 4V @ 1mA | 17.8 nC @ 10 V | ±20V | 1023 pF @ 25 V | - | 64W (Tc) | |||||||||||||||
|
PSMN017-30BL118 | - | |
9646 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | download | EAR99 | 8541.29.0095 | 1 |
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Daily average RFQ Volume
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