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FETs, MOSFETs(55612)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | ECCN | HTSUS | Standard Package | Configuration | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
AUIRFZ48Z | 0.9100 |  |
5 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 55 V | 61A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±20V | 1720 pF @ 25 V | - | 91W (Tc) | |||||||
 |
BUK7M21-40E,115 | 1.0000 | |
6146 | 0.00000000 | NXP Semiconductors | * | Bulk | Active | - | 0000.00.0000 | 1 | ||||||||||||||||||||||||
|
CPH3442-TL-E | 0.4100 | |
2944 | 0.00000000 | Sanyo | - | Bulk | Obsolete | 150°C (TJ) | Surface Mount | SC-96 | MOSFET (Metal Oxide) | 3-CPH | - | Not applicable | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 81 | N-Channel | 30 V | 6.5A (Ta) | 24mOhm @ 3A, 4V | - | 16.1 nC @ 4 V | 1295 pF @ 10 V | - | 1.2W (Ta) | ||||||
 |
PH5830DL,115 | 0.2200 | |
106 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | - | 0000.00.0000 | 1 | ||||||||||||||||||||||||
|
BUK762R6-40E118 | - | |
3400 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | - | 0000.00.0000 | 1 | ||||||||||||||||||||||||
 |
AUIRFU8403 | 0.9600 | |
17 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | I-PAK | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 40 V | 100A (Tc) | 10V | 3.1mOhm @ 76A, 10V | 3.9V @ 100µA | 99 nC @ 10 V | ±20V | 3171 pF @ 25 V | - | 99W (Tc) | |||||||
 |
FDPF5N50UT | 0.6400 | |
20 | 0.00000000 | Fairchild Semiconductor | FRFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | download | EAR99 | 8542.39.0001 | 470 | N-Channel | 500 V | 4A (Tc) | 10V | 2Ohm @ 2A, 10V | 5V @ 250µA | 15 nC @ 10 V | ±30V | 650 pF @ 25 V | - | 28W (Tc) | |||||||
 |
FQPF17N40T | 1.8300 | |
642 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 400 V | 9.5A (Tc) | 10V | 270mOhm @ 4.75A, 10V | 5V @ 250µA | 60 nC @ 10 V | ±30V | 2300 pF @ 25 V | - | 56W (Tc) | |||||||
 |
FDY100PZ | - | |
9774 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | SC-89, SOT-490 | MOSFET (Metal Oxide) | SOT-523F | download | EAR99 | 8542.39.0001 | 1 | P-Channel | 20 V | 350mA (Ta) | 1.8V, 4.5V | 1.2Ohm @ 350mA, 4.5V | 1.5V @ 250µA | 1.4 nC @ 4.5 V | ±8V | 100 pF @ 10 V | - | 625mW (Ta) | |||||||
 |
FDMS3602S | 1.7100 | |
1 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | FDMS3602 | MOSFET (Metal Oxide) | 1W | Power56 | download | EAR99 | 8542.39.0001 | 192 | 2 N-Channel (Dual) | 25V | 15A, 26A | 5.6mOhm @ 15A, 10V | 3V @ 250µA | 27nC @ 10V | 1680pF @ 13V | Logic Level Gate | ||||||||
 |
FDB8870 | 1.0300 | |
1 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK (TO-263) | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 30 V | 23A (Ta), 160A (Tc) | 4.5V, 10V | 3.9mOhm @ 35A, 10V | 2.5V @ 250µA | 132 nC @ 10 V | ±20V | 5200 pF @ 15 V | - | 160W (Tc) | |||||||
|
FPF1C2P5BF07A | 71.4300 | |
433 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Active | -40°C ~ 150°C (TJ) | Chassis Mount | F1 Module | FPF1C2 | MOSFET (Metal Oxide) | 250W | F1 | download | EAR99 | 8542.39.0001 | 1 | 5 N-Channel (Solar Inverter) | 650V | 36A | 90mOhm @ 27A, 10V | 3.8V @ 250µA | - | - | - | ||||||||
|
FDMB3800N | - | |
6599 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | FDMB3800 | MOSFET (Metal Oxide) | 750mW | 8-MLP, MicroFET (3x1.9) | download | EAR99 | 8542.39.0001 | 587 | 2 N-Channel (Dual) | 30V | 4.8A | 40mOhm @ 4.8A, 10V | 3V @ 250µA | 5.6nC @ 5V | 465pF @ 15V | Logic Level Gate | ||||||||
|
IPG20N04S4-08 | - | |
6522 | 0.00000000 | Infineon Technologies | OptiMOS™T2 | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | IPG20N | MOSFET (Metal Oxide) | 65W (Tc) | PG-TDSON-8-4 | download | EAR99 | 8542.39.0001 | 1 | 2 N-Channel (Dual) | 40V | 20A (Tc) | 7.6mOhm @ 17A, 10V | 4V @ 30µA | 36nC @ 10V | 2940pF @ 25V | - | ||||||||
 |
BUK969R3-100E,118 | 1.1100 | |
8475 | 0.00000000 | NXP USA Inc. | Automotive, AEC-Q101, TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 100 V | 100A (Tc) | 5V, 10V | 8.9mOhm @ 25A, 10V | 2.1V @ 1mA | 94.3 nC @ 5 V | ±10V | 11650 pF @ 25 V | - | 263W (Tc) | |||||||
 |
FDS6930A | 0.3400 | |
6 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | FDS6930 | MOSFET (Metal Oxide) | 900mW | 8-SOIC | download | EAR99 | 8542.39.0001 | 946 | 2 N-Channel (Dual) | 30V | 5.5A | 40mOhm @ 5.5A, 10V | 3V @ 250µA | 7nC @ 5V | 460pF @ 15V | Logic Level Gate | ||||||||
|
IRF40DM229 | 1.2100 | |
9 | 0.00000000 | International Rectifier | StrongIRFET™ | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MF | MOSFET (Metal Oxide) | DirectFET™ Isometric MF | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 40 V | 159A (Tc) | 6V, 10V | 1.85mOhm @ 97A, 10V | 3.9V @ 100µA | 161 nC @ 10 V | ±20V | 5317 pF @ 25 V | - | 83W (Tc) | |||||||
|
FQPF2N60C | 0.6000 | |
37 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | download | EAR99 | 8541.29.0095 | 501 | N-Channel | 600 V | 2A (Tc) | 10V | 4.7Ohm @ 1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±30V | 235 pF @ 25 V | - | 23W (Tc) | |||||||
|
FDS4470 | 0.9100 | |
194 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SOIC | download | EAR99 | 8541.29.0095 | 329 | N-Channel | 40 V | 12.5A (Ta) | 10V | 9mOhm @ 12.5A, 10V | 5V @ 250µA | 63 nC @ 10 V | +30V, -20V | 2659 pF @ 20 V | - | 2.5W (Ta) | |||||||
|
IRFS4620PBF | 1.0000 | |
1444 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 200 V | 24A (Tc) | 10V | 77.5mOhm @ 15A, 10V | 5V @ 100µA | 38 nC @ 10 V | ±20V | 1710 pF @ 50 V | - | 144W (Tc) | |||||||
|
FDS6612A | 0.3300 | |
144 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SOIC | download | EAR99 | 8542.39.0001 | 917 | N-Channel | 30 V | 8.4A (Ta) | 4.5V, 10V | 22mOhm @ 8.4A, 10V | 3V @ 250µA | 7.6 nC @ 5 V | ±20V | 560 pF @ 15 V | - | 2.5W (Ta) | |||||||
|
PHB18NQ10T,118 | 0.4500 | |
1 | 0.00000000 | NXP USA Inc. | TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | EAR99 | 8541.29.0095 | 727 | N-Channel | 100 V | 18A (Tc) | 10V | 90mOhm @ 9A, 10V | 4V @ 1mA | 21 nC @ 10 V | ±20V | 633 pF @ 25 V | - | 79W (Tc) | |||||||
 |
SPA20N65C3XK | 3.5900 | |
165 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | PG-TO220-3-111 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 650 V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 34.5W (Tc) | |||||||
|
FDS6575 | 1.0000 | |
2847 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SOIC | download | EAR99 | 8542.39.0001 | 1 | P-Channel | 20 V | 10A (Ta) | 2.5V, 4.5V | 13mOhm @ 10A, 4.5V | 1.5V @ 250µA | 74 nC @ 4.5 V | ±8V | 4951 pF @ 10 V | - | 2.5W (Ta) | |||||||
 |
IRF6797MTRPBF | 1.2500 | |
11 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | MOSFET (Metal Oxide) | DIRECTFET™ MX | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 25 V | 36A (Ta), 210A (Tc) | 4.5V, 10V | 1.4mOhm @ 38A, 10V | 2.35V @ 150µA | 68 nC @ 4.5 V | ±20V | 5790 pF @ 13 V | - | 2.8W (Ta), 89W (Tc) | |||||||
 |
IRFP7530PBF | 1.0000 | |
7704 | 0.00000000 | International Rectifier | HEXFET®, StrongIRFET™ | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 60 V | 195A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 411 nC @ 10 V | ±20V | 13703 pF @ 25 V | - | 341W (Tc) | |||||||
 |
FDPF7N60NZT | 0.6400 | |
5 | 0.00000000 | Fairchild Semiconductor | UniFET-II™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 6.5A (Tc) | 10V | 1.25Ohm @ 3.25A, 10V | 5V @ 250µA | 17 nC @ 10 V | ±30V | 730 pF @ 25 V | - | 33W (Tc) | |||||||
|
IRLR7833TRPBF | - | |
7124 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | D-Pak | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 30 V | 140A (Tc) | 4.5V, 10V | 4.5mOhm @ 15A, 10V | 2.3V @ 250µA | 50 nC @ 4.5 V | ±20V | 4010 pF @ 15 V | - | 140W (Tc) | |||||||
 |
IRF7404TRPBF | 0.4000 | |
9942 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SO | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 104 | P-Channel | 20 V | 6.7A (Ta) | 2.7V, 4.5V | 40mOhm @ 3.2A, 4.5V | 700mV @ 250µA (Min) | 50 nC @ 4.5 V | ±12V | 1500 pF @ 15 V | - | 2.5W (Ta) | ||||
|
IPP65R380E6 | - | |
3455 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | PG-TO220-3-1 | download | 0000.00.0000 | 1 | N-Channel | 650 V | 10.6A (Tc) | 10V | 380mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39 nC @ 10 V | ±20V | 710 pF @ 100 V | - | 83W (Tc) |
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