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FETs, MOSFETs(55612)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | ECCN | HTSUS | Standard Package | Configuration | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPA50R250CP | 1.5600 |  |
220 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | PG-TO220-3-31 | download | EAR99 | 8542.39.0001 | 220 | N-Channel | 500 V | 13A (Tc) | 10V | 250mOhm @ 7.8A, 10V | 3.5V @ 520µA | 36 nC @ 10 V | ±20V | 1420 pF @ 100 V | - | 33W (Tc) | |||||||
 |
BUK7Y65-100EX | - | |
6099 | 0.00000000 | NXP USA Inc. | TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | BUK7Y65 | MOSFET (Metal Oxide) | LFPAK56, Power-SO8 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 100 V | 19A (Tc) | 10V | 65mOhm @ 5A, 10V | 4V @ 1mA | 17.8 nC @ 10 V | ±20V | 1023 pF @ 25 V | - | 64W (Tc) | ||||||
 |
PSMN017-30BL118 | - | |
9646 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | download | EAR99 | 8541.29.0095 | 1 | |||||||||||||||||||||||
 |
2SJ463A-T1-A | - | |
9949 | 0.00000000 | Renesas Electronics America Inc | * | Bulk | Active | download | 0000.00.0000 | 1 | ||||||||||||||||||||||||
 |
BSC030N03LSG | - | |
3188 | 0.00000000 | Infineon Technologies | OptiMOS™ 3 | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-1 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 30 V | 23A (Ta), 122A (Tc) | 4.5V, 10V | 3mOhm @ 30A, 10V | 2.2V @ 250µA | 55 nC @ 10 V | ±20V | 4300 pF @ 15 V | - | 2.5W (Ta), 69W (Tc) | |||||||
|
IPP65R125C7 | 1.0000 | |
2962 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | PG-TO220-3-1 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 650 V | 18A (Tc) | 10V | 125mOhm @ 8.9A, 10V | 4V @ 440µA | 35 nC @ 10 V | ±20V | 1670 pF @ 400 V | - | 101W (Tc) | |||||||
|
SPB07N60C3 | - | |
1041 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | PG-TO263-3-2 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27 nC @ 10 V | ±20V | 790 pF @ 25 V | - | 83W (Tc) | |||||||
|
FDPF10N50UT | 0.8600 | |
1 | 0.00000000 | Fairchild Semiconductor | UniFET™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | download | EAR99 | 8542.39.0001 | 351 | N-Channel | 500 V | 8A (Tc) | 10V | 1.05Ohm @ 4A, 10V | 5V @ 250µA | 24 nC @ 10 V | ±30V | 1130 pF @ 25 V | - | 42W (Tc) | |||||||
 |
AUIRFS3107-7P | 1.0000 | |
6024 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | MOSFET (Metal Oxide) | D2PAK (7-Lead) | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 75 V | 240A (Tc) | 10V | 2.6mOhm @ 160A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 9200 pF @ 50 V | - | 370W (Tc) | |||||||
|
FDMS3606AS | 1.0900 | |
7 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | FDMS3606 | MOSFET (Metal Oxide) | 1W | 8-PQFN (5x6) | download | EAR99 | 8542.39.0001 | 1 | 2 N-Channel (Dual) Asymmetrical | 30V | 13A, 27A | 8mOhm @ 13A, 10V | 2.7V @ 250µA | 29nC @ 10V | 1695pF @ 15V | Logic Level Gate | ||||||||
 |
FDZ661PZ | 0.3200 | |
80 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 4-XFBGA, WLCSP | MOSFET (Metal Oxide) | 4-WLCSP (0.8x0.8) | download | EAR99 | 8542.39.0001 | 952 | P-Channel | 20 V | 2.6A (Ta) | 1.5V, 4.5V | 140mOhm @ 2A, 4.5V | 1.2V @ 250µA | 8.8 nC @ 4.5 V | ±8V | 555 pF @ 10 V | - | 1.3W (Ta) | |||||||
|
AUIRLR2905ZTRL | 1.0000 | |
2228 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | D-Pak | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 55 V | 42A (Tc) | 13.5mOhm @ 36A, 10V | 3V @ 250µA | 35 nC @ 5 V | 1570 pF @ 25 V | - | 110W (Tc) | |||||||||
|
ECH8619-TL-E | 0.4100 | |
1693 | 0.00000000 | Sanyo | - | Bulk | Obsolete | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | ECH8619 | MOSFET (Metal Oxide) | 1.5W | 8-ECH | - | 0000.00.0000 | 108 | N and P-Channel | 60V | 3A, 2A | 93mOhm @ 1.5A, 10V | - | 12.8nC @ 10V | 560pF @ 20V | Logic Level Gate | |||||||||
|
IPC022N03L3X1SA1 | - | |
7557 | 0.00000000 | Infineon Technologies | OptiMOS™ | Bulk | Discontinued at SIC | - | Surface Mount | Die | IPC022N | MOSFET (Metal Oxide) | Sawn on foil | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 30 V | 1A (Tj) | 10V | 50mOhm @ 2A, 10V | 2.2V @ 250µA | - | - | - | |||||
|
IPA60R125P6 | 1.0000 | |
9832 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | PG-TO220-3-111 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 30A (Tc) | 10V | 125mOhm @ 11.6A, 10V | 4.5V @ 960µA | 56 nC @ 10 V | ±20V | 2660 pF @ 100 V | - | 34W (Tc) | |||||||
|
BUK9Y14-40B,115 | - | |
1516 | 0.00000000 | NXP USA Inc. | Automotive, AEC-Q101, TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | MOSFET (Metal Oxide) | LFPAK56, Power-SO8 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 40 V | 56A (Tc) | 5V | 11mOhm @ 20A, 10V | 2V @ 1mA | 21 nC @ 5 V | ±15V | 1800 pF @ 25 V | - | 85W (Tc) | |||||||
|
IPN50R3K0CE | - | |
6787 | 0.00000000 | Infineon Technologies | CoolMOS™ CE | Bulk | Active | -40°C ~ 150°C (TJ) | Surface Mount | TO-261-3 | MOSFET (Metal Oxide) | PG-SOT223 | download | 0000.00.0000 | 1 | N-Channel | 500 V | 2.6A (Tc) | 13V | 3Ohm @ 400mA, 13V | 3.5V @ 30µA | 4.3 nC @ 10 V | ±20V | 84 pF @ 100 V | - | 5W (Tc) | ||||||||
 |
FQPF8N90C | 1.1700 | |
2 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | FQPF8 | MOSFET (Metal Oxide) | TO-220F | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 900 V | 6.3A (Tc) | 10V | 1.9Ohm @ 3.15A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 2080 pF @ 25 V | - | 60W (Tc) | ||||||
|
IRFAE42 | - | |
1351 | 0.00000000 | International Rectifier | - | Bulk | Active | - | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | TO-204AA (TO-3) | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 800 V | 4.4A | - | - | - | - | - | 125W | |||||||||
 |
IRF6775MTRPBF | 1.2100 | |
597 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | MOSFET (Metal Oxide) | DIRECTFET™ MZ | download | EAR99 | 8541.29.0095 | 249 | N-Channel | 150 V | 4.9A (Ta), 28A (Tc) | 10V | 56mOhm @ 5.6A, 10V | 5V @ 100µA | 36 nC @ 10 V | ±20V | 1411 pF @ 25 V | - | 2.8W (Ta), 89W (Tc) | |||||||
|
FQB19N20TM | 0.8800 | |
4720 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK (TO-263) | download | EAR99 | 8542.39.0001 | 254 | N-Channel | 200 V | 19.4A (Tc) | 10V | 150mOhm @ 9.7A, 10V | 5V @ 250µA | 40 nC @ 10 V | ±30V | 1600 pF @ 25 V | - | 3.13W (Ta), 140W (Tc) | |||||||
|
IPP60R090CFD7 | - | |
6875 | 0.00000000 | Infineon Technologies | * | Bulk | Active | download | 0000.00.0000 | 1 | ||||||||||||||||||||||||
 |
AUIRFBA1405 | - | |
2709 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Obsolete | -40°C ~ 175°C (TJ) | Through Hole | TO-273AA | MOSFET (Metal Oxide) | SUPER-220™ (TO-273AA) | download | EAR99 | 8541.29.0095 | 163 | N-Channel | 55 V | 95A (Tc) | 10V | 5mOhm @ 101A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 5480 pF @ 25 V | - | 330W (Tc) | |||||||
 |
FQA19N60 | - | |
1324 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 18.5A (Tc) | 10V | 380mOhm @ 9.3A, 10V | 5V @ 250µA | 90 nC @ 10 V | ±30V | 3600 pF @ 25 V | - | 300W (Tc) | |||||||
|
FDMD8900 | 0.9900 | |
15 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 12-PowerWDFN | FDMD89 | MOSFET (Metal Oxide) | 2.1W | 12-Power3.3x5 | download | EAR99 | 8542.39.0001 | 1 | 2 N-Channel (Dual) | 30V | 19A, 17A | 4mOhm @ 19A, 10V | 2.5V @ 250µA | 35nC @ 10V | 2605pF @ 15V | - | ||||||||
|
IPA028N08N3G | 3.8000 | |
5 | 0.00000000 | Infineon Technologies | OptiMOS™ 3 | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | PG-TO220-3-111 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 80 V | 89A (Tc) | 6V, 10V | 2.8mOhm @ 89A, 10V | 3.5V @ 270µA | 206 nC @ 10 V | ±20V | 14200 pF @ 40 V | - | 42W (Tc) | |||||||
|
IPA057N08N3G | - | |
7088 | 0.00000000 | Infineon Technologies | OptiMOS™3 | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | PG-TO220-3-111 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 80 V | 60A (Tc) | 6V, 10V | 5.7mOhm @ 60A, 10V | 3.5V @ 90µA | 69 nC @ 10 V | ±20V | 4750 pF @ 40 V | - | 39W (Tc) | |||||||
|
AUIRFS6535TRL | - | |
7651 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | PG-TO263-3 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 300 V | 19A (Tc) | 10V | 185mOhm @ 11A, 10V | 5V @ 150µA | 57 nC @ 10 V | ±20V | 2340 pF @ 25 V | - | 210W (Tc) | |||||||
 |
BSS138L | - | |
1985 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | SOT-23-3 | download | EAR99 | 8541.21.0095 | 1 | N-Channel | 50 V | 200mA (Ta) | 2.75V, 5V | 3.5Ohm @ 200mA, 5V | 1.5V @ 1mA | 2.4 nC @ 10 V | ±20V | 50 pF @ 25 V | - | 350mW (Ta) | |||||||
|
BUK7606-55B,118 | - | |
1447 | 0.00000000 | NXP USA Inc. | Automotive, AEC-Q101, TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0075 | 1 | N-Channel | 55 V | 75A (Tc) | 10V | 6mOhm @ 25A, 10V | 4V @ 1mA | 64 nC @ 10 V | ±20V | 5100 pF @ 25 V | - | 254W (Tc) |
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